公开(公告)号：US20150243694A1

公开(公告)日：2015-08-27

申请号：US14624751

申请日：2015-02-18

申请人： Hisanori Ihara

发明人： Hisanori Ihara

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

摘要： Image sensors are provided including a substrate defining a plurality of pixel regions, the substrate having a first surface and a second surface opposite the first surface. The second surface of the substrate is configured to receive light incident thereon and the substrate defines a deep trench extending from the second surface of the substrate toward the first surface substrate and separating the plurality of pixel regions from each other. In each of the plurality of pixel regions of the substrate, a photoelectric conversion region is provided. A gate electrode is provided on the photoelectric conversion region and a negative fixed charge layer covering the second surface of the substrate and at least a portion of a sidewall of the deep trench is also provided. The image sensors further include a shallow device isolation layer on the first surface of the substrate. The shallow device isolation layer defines an active region in each of the pixel regions and the negative fixed charge layer contacts the shallow device isolation layer.

摘要翻译： 提供图像传感器，其包括限定多个像素区域的基板，所述基板具有第一表面和与第一表面相对的第二表面。 衬底的第二表面被配置为接收入射在其上的光，并且衬底限定从衬底的第二表面朝向第一表面衬底延伸并将多个像素区彼此分离的深沟槽。 在基板的多个像素区域的每一个中，提供光电转换区域。 在光电转换区域上设置栅电极，并且还设置覆盖基板的第二表面的负固定电荷层和深沟槽的侧壁的至少一部分。 图像传感器还包括在衬底的第一表面上的浅器件隔离层。 浅器件隔离层限定每个像素区域中的有源区，负的固定电荷层接触浅器件隔离层。

公开(公告)号：US08987751B2

公开(公告)日：2015-03-24

申请号：US13301270

申请日：2011-11-21

申请人： Hisanori Ihara

发明人： Hisanori Ihara

IPC分类号： H01L27/148 ,  H01L31/103 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/0232

CPC分类号： H01L31/103 ,  H01L27/1461 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687 ,  H01L31/02161 ,  H01L31/02162 ,  H01L31/02327 ,  Y02E10/52

摘要： According to example embodiments, a photodiode system may include a substrate, and at least one photodiode in the substrate, and a wideband gap material layer on a first surface of the substrate. The at least one photodiode may be between an insulating material in a horizontal plane. According to example embodiments, a back-side-illumination (BSI) CMOS image sensor and/or a solar cell may include a photodiode device. The photodiode device may include a substrate, at least one photodiode in the substrate, a wide bandgap material layer on a first surface of the substrate, and an anti-reflective layer (ARL) on the wide bandgap material layer.

摘要翻译： 根据示例实施例，光电二极管系统可以包括衬底，以及衬底中的至少一个光电二极管，以及在衬底的第一表面上的宽带间隙材料层。 所述至少一个光电二极管可以在水平面内的绝缘材料之间。 根据示例性实施例，背面照明（BSI）CMOS图像传感器和/或太阳能电池可以包括光电二极管装置。 光电二极管器件可以包括衬底，衬底中的至少一个光电二极管，在衬底的第一表面上的宽带隙材料层和宽带隙材料层上的抗反射层（ARL）。

公开(公告)号：US20130175582A1

公开(公告)日：2013-07-11

申请号：US13561937

申请日：2012-07-30

申请人： Hisanori Ihara ,  Chang-rok Moon

发明人： Hisanori Ihara ,  Chang-rok Moon

IPC分类号： H01L27/148

CPC分类号： H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14647 ,  H01L27/14689

摘要： An image sensor includes a transfer transistor including a vertical gate portion extending in a depth direction of a substrate in an active region of the substrate and photodiode regions located at positions of different depths with respect to a top surface of the substrate in the active region. At least one color adjustment path extends between at least two photodiode regions of the photodiode regions and provides a charge movement path between the at least two photodiode regions.

摘要翻译： 图像传感器包括传输晶体管，其包括在衬底的有源区域中沿着衬底的深度方向延伸的垂直栅极部分和位于有源区域中相对于衬底的顶表面的不同深度的位置处的光电二极管区域。 至少一个颜色调整路径在光电二极管区域的至少两个光电二极管区域之间延伸，并且在至少两个光电二极管区域之间提供电荷移动路径。

公开(公告)号：US20090008686A1

公开(公告)日：2009-01-08

申请号：US12166621

申请日：2008-07-02

申请人： Motohiro MAEDA ,  Hisanori Ihara ,  Hirofumi Yamashita ,  Fumiaki Sano ,  Makoto Monoi ,  Takanori Yagami

发明人： Motohiro MAEDA ,  Hisanori Ihara ,  Hirofumi Yamashita ,  Fumiaki Sano ,  Makoto Monoi ,  Takanori Yagami

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14603

摘要： A transfer gate is formed such that both end portions thereof in a second direction, which crosses a first direction in which a photodiode and a floating diffusion layer that is formed with a distance from the photodiode are arranged, are located inside boundaries with element isolation regions. Channel stopper layers are formed on surface portions of a device region in the vicinity of lower parts of both end portions of the transfer gate in the second direction in such a manner to extend to the boundaries with the element isolation regions.

摘要翻译： 传输门形成为使得其第二方向上的两个端部跨过与光电二极管形成距离的光电二极管和浮动扩散层的第一方向，其位于与元件隔离区域的边界内 。 通道阻挡层形成在传输门的两端部的下部附近的器件区域的第二方向上的表面部分上，以延伸到与元件隔离区域的边界。

公开(公告)号：US09564463B2

公开(公告)日：2017-02-07

申请号：US15053356

申请日：2016-02-25

申请人： Hisanori Ihara

发明人： Hisanori Ihara

IPC分类号： H01L21/00 ,  H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

摘要： Image sensors are provided including a substrate defining a plurality of pixel regions, the substrate having a first surface and a second surface opposite the first surface. The second surface of the substrate is configured to receive light incident thereon and the substrate defines a deep trench extending from the second surface of the substrate toward the first surface substrate and separating the plurality of pixel regions from each other. In each of the plurality of pixel regions of the substrate, a photoelectric conversion region is provided. A gate electrode is provided on the photoelectric conversion region and a negative fixed charge layer covering the second surface of the substrate and at least a portion of a sidewall of the deep trench is also provided. The image sensors further include a shallow device isolation layer on the first surface of the substrate. The shallow device isolation layer defines an active region in each of the pixel regions and the negative fixed charge layer contacts the shallow device isolation layer.

摘要翻译： 提供图像传感器，其包括限定多个像素区域的基板，所述基板具有第一表面和与第一表面相对的第二表面。 衬底的第二表面被配置为接收入射在其上的光，并且衬底限定从衬底的第二表面朝向第一表面衬底延伸并将多个像素区彼此分离的深沟槽。 在基板的多个像素区域的每一个中，提供光电转换区域。 在光电转换区域上设置栅电极，并且还设置覆盖基板的第二表面的负固定电荷层和深沟槽的侧壁的至少一部分。 图像传感器还包括在衬底的第一表面上的浅器件隔离层。 浅器件隔离层限定每个像素区域中的有源区，负的固定电荷层接触浅器件隔离层。

公开(公告)号：US20160043132A1

公开(公告)日：2016-02-11

申请号：US14819908

申请日：2015-08-06

申请人： Hisanori Ihara

发明人： Hisanori Ihara

IPC分类号： H01L27/146

CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641

摘要： A CMOS image sensor includes a substrate and at least one device isolation region in the substrate and defining first and second pixel regions and first and second active portions in each of the first and second pixel regions. A reset and select transistor gates are disposed in the first pixel region, while a source follower transistor gate is disposed in the second pixel region, such that pixels in the first and second pixel regions share the reset, select and source follower transistors. A length of the source follower transistor gate may be greater than lengths of the reset and selection transistor gates.

摘要翻译： CMOS图像传感器包括衬底和衬底中的至少一个器件隔离区域，并且限定第一和第二像素区域以及第一和第二像素区域中的每一个中的第一和第二有源部分。 复位和选择晶体管栅极设置在第一像素区域中，而源极跟随器晶体管栅极设置在第二像素区域中，使得第一和第二像素区域中的像素共享复位，选择和源极跟随器晶体管。 源极跟随器晶体管栅极的长度可以大于复位和选择晶体管栅极的长度。

公开(公告)号：US08653436B2

公开(公告)日：2014-02-18

申请号：US12641133

申请日：2009-12-17

申请人： Hisanori Ihara

发明人： Hisanori Ihara

IPC分类号： H01L31/00

CPC分类号： H01L27/14603 ,  H01L27/1464 ,  H01L27/14683

摘要： A pinned photodiode structure with peninsula-shaped transfer gate which decrease the occurrence of a potential barrier between the photodiode and the floating drain, prevents loss of full well capacity (FWC) and decreases occurrences of image lag.

摘要翻译： 具有半岛形传输门的钉扎光电二极管结构，可减少光电二极管和浮置漏极之间的势垒的发生，防止全阱容量（FWC）的损失，并减少图像滞后的发生。

公开(公告)号：US20060046369A1

公开(公告)日：2006-03-02

申请号：US11210681

申请日：2005-08-25

申请人： Hisanori Ihara ,  Nagataka Tanaka ,  Hiroshige Goto

发明人： Hisanori Ihara ,  Nagataka Tanaka ,  Hiroshige Goto

IPC分类号： H01L21/76 ,  H01L21/8238

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14689

摘要： A solid-state image sensor having a well of a first conductivity type; a photoelectric conversion region having a second conductivity type formed in the well storing charges obtained from a photoelectric conversion; a drain region having the second conductivity type formed in the well apart from a surface of the well; and a gate electrode formed on the surface of the well via a gate insulator, the gate electrode transferring the charges from the photoelectric conversion region to the drain region. Alternatively, a transistor includes a first semiconductor region having a first conductivity type; second and third semiconductor regions having a second conductivity type formed in the first semiconductor region, the second and third semiconductor regions being separated from each other by a portion of the first semiconductor region serving as a channel region; an insulator layer provided on a surface of the first semiconductor region in contact with the channel region; a gate electrode provided on the insulator layer; and the first semiconductor region includes a shield semiconductor region of the first conductivity type disposed between the surface of the first semiconductor region and at least one of the second and third semiconductor regions such that the at least one of the second and third semiconductor regions is sandwiched between the shield region and the first semiconductor region.

摘要翻译： 一种具有第一导电类型的阱的固态图像传感器; 在由光电转换得到的储存电荷中形成的具有第二导电类型的光电转换区; 具有第二导电类型的漏极区域形成在与阱的表面分离的井中; 以及通过栅极绝缘体在阱的表面上形成的栅电极，栅电极将电荷从光电转换区域传送到漏区。 或者，晶体管包括具有第一导电类型的第一半导体区域; 具有形成在第一半导体区域中的第二导电类型的第二和第三半导体区域，第二和第三半导体区域被用作沟道区域的第一半导体区域的一部分彼此分离; 设置在与所述沟道区域接触的所述第一半导体区域的表面上的绝缘体层; 设置在所述绝缘体层上的栅电极; 并且第一半导体区域包括设置在第一半导体区域的表面和第二和第三半导体区域中的至少一个之间的第一导电类型的屏蔽半导体区域，使得第二和第三半导体区域中的至少一个被夹在 在所述屏蔽区域和所述第一半导体区域之间。

公开(公告)号：US20160172391A1

公开(公告)日：2016-06-16

申请号：US15053356

申请日：2016-02-25

申请人： Hisanori Ihara

发明人： Hisanori Ihara

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

摘要： Image sensors are provided including a substrate defining a plurality of pixel regions, the substrate having a first surface and a second surface opposite the first surface. The second surface of the substrate is configured to receive light incident thereon and the substrate defines a deep trench extending from the second surface of the substrate toward the first surface substrate and separating the plurality of pixel regions from each other. In each of the plurality of pixel regions of the substrate, a photoelectric conversion region is provided. A gate electrode is provided on the photoelectric conversion region and a negative fixed charge layer covering the second surface of the substrate and at least a portion of a sidewall of the deep trench is also provided. The image sensors further include a shallow device isolation layer on the first surface of the substrate. The shallow device isolation layer defines an active region in each of the pixel regions and the negative fixed charge layer contacts the shallow device isolation layer.

摘要翻译： 提供图像传感器，其包括限定多个像素区域的基板，所述基板具有第一表面和与第一表面相对的第二表面。 衬底的第二表面被配置为接收入射在其上的光，并且衬底限定从衬底的第二表面朝向第一表面衬底延伸并将多个像素区彼此分离的深沟槽。 在基板的多个像素区域的每一个中，提供光电转换区域。 在光电转换区域上设置栅电极，并且还设置覆盖基板的第二表面的负固定电荷层和深沟槽的侧壁的至少一部分。 图像传感器还包括在衬底的第一表面上的浅器件隔离层。 浅器件隔离层限定每个像素区域中的有源区，负的固定电荷层接触浅器件隔离层。

公开(公告)号：US07696547B2

公开(公告)日：2010-04-13

申请号：US11210681

申请日：2005-08-25

申请人： Hisanori Ihara ,  Nagataka Tanaka ,  Hiroshige Goto

发明人： Hisanori Ihara ,  Nagataka Tanaka ,  Hiroshige Goto

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14689

摘要： A solid-state image sensor having a well of a first conductivity type; a photoelectric conversion region having a second conductivity type formed in the well storing charges obtained from a photoelectric conversion; a drain region having the second conductivity type formed in the well apart from a surface of the well; and a gate electrode formed on the surface of the well via a gate insulator, the gate electrode transferring the charges from the photoelectric conversion region to the drain region. Alternatively, a transistor includes a first semiconductor region having a first conductivity type; second and third semiconductor regions having a second conductivity type formed in the first semiconductor region, the second and third semiconductor regions being separated from each other by a portion of the first semiconductor region serving as a channel region; an insulator layer provided on a surface of the first semiconductor region in contact with the channel region; a gate electrode provided on the insulator layer; and the first semiconductor region includes a shield semiconductor region of the first conductivity type disposed between the surface of the first semiconductor region and at least one of the second and third semiconductor regions such that the at least one of the second and third semiconductor regions is sandwiched between the shield region and the first semiconductor region.

摘要翻译： 一种具有第一导电类型的阱的固态图像传感器; 在由光电转换得到的储存电荷中形成的具有第二导电类型的光电转换区; 具有第二导电类型的漏极区域形成在与阱的表面分离的井中; 以及通过栅极绝缘体在阱的表面上形成的栅电极，栅电极将电荷从光电转换区域传送到漏区。 或者，晶体管包括具有第一导电类型的第一半导体区域; 具有形成在第一半导体区域中的第二导电类型的第二和第三半导体区域，第二和第三半导体区域被用作沟道区域的第一半导体区域的一部分彼此分离; 设置在与所述沟道区域接触的所述第一半导体区域的表面上的绝缘体层; 设置在所述绝缘体层上的栅电极; 并且第一半导体区域包括设置在第一半导体区域的表面和第二和第三半导体区域中的至少一个之间的第一导电类型的屏蔽半导体区域，使得第二和第三半导体区域中的至少一个被夹在 在所述屏蔽区域和所述第一半导体区域之间。