公开(公告)号：US20110064885A1

公开(公告)日：2011-03-17

申请号：US12881516

申请日：2010-09-14

申请人： Kunihiko SUZUKI ,  Shinichi MITANI

发明人： Kunihiko SUZUKI ,  Shinichi MITANI

IPC分类号： B05D3/02 ,  C23C16/00

CPC分类号： C23C16/4401 ,  C23C16/46

摘要： The deposition apparatus 100 comprises: a heater 121 for heating a silicon wafer 101; electrically-conductive busbars 123 for supporting the heater 121; electrode assemblies 107 for supporting the busbars 123 and conducting electricity to the heater 121, the electrode assemblies 107 each having a hollow rod electrode 108 with upper and lower openings; and a columnar support 105 for supporting the rod electrodes 108 of the electrode assemblies 107. Wafer heating by the heater 121 is conducted while a purge gas flows through the inside of the rod electrodes 108 from the lower openings of the rod electrodes 108, so that the electrode assemblies 107 cannot be heated to a high temperature.

摘要翻译： 沉积装置100包括：用于加热硅晶片101的加热器121; 用于支撑加热器121的导电汇流条123; 用于支撑汇流条123并向加热器121传导电力的电极组件107，每个电极组件107具有带有上开口和下开口的中空棒电极108; 以及用于支撑电极组件107的杆电极108的柱状支撑件105.由吹扫气体从棒状电极108的下部开口流过棒状电极108的内部时，进行加热器121的晶片加热， 电极组件107不能被加热到高温。

公开(公告)号：US20100021631A1

公开(公告)日：2010-01-28

申请号：US12508012

申请日：2009-07-23

申请人： Yoshikazu MORIYAMA ,  Kunihiko SUZUKI ,  Hironobu HIRATA

发明人： Yoshikazu MORIYAMA ,  Kunihiko SUZUKI ,  Hironobu HIRATA

IPC分类号： C23C16/52 ,  C23C16/00 ,  C23C16/44

CPC分类号： C23C16/45572 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/46 ,  C30B25/14 ,  C30B29/06

摘要： In a coating apparatus, a distributor plate 104 is disposed upstream of a silicon wafer 101 relative to the direction of flow of reactive gas. The distributor plate 104 has therein first through-holes 104a and second through-holes 104b arranged so as not to meet the first through-holes 104a. The reactive gas passes through the first through-holes 104a and flows down toward the silicon wafer 101. Further, a cooling gas passes through the second through-holes 104b.

摘要翻译： 在涂布装置中，分配器板104相对于反应气体的流动方向设置在硅晶片101的上游。 分配板104在其中具有布置成不与第一通孔104a相交的第一通孔104a和第二通孔104b。 反应气体通过第一通孔104a并朝向硅晶片101向下流动。此外，冷却气体通过第二通孔104b。

公开(公告)号：US20090142933A1

公开(公告)日：2009-06-04

申请号：US12324578

申请日：2008-11-26

申请人： Masayoshi YAJIMA ,  Kunihiko SUZUKI

发明人： Masayoshi YAJIMA ,  Kunihiko SUZUKI

IPC分类号： H01L21/302 ,  B05B3/02

CPC分类号： H01L21/67109 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/67017 ,  H01L21/68785 ,  H01L21/68792

摘要： A manufacturing apparatus for a semiconductor device, includes: a reaction chamber to which a wafer w is loaded; a gas supply port for supplying first process gas including source gas from an upper portion of the reaction chamber; a first rectifying plate for supplying the first process gas onto the wafer in a rectifying state; a first gas exhaust port for exhausting gas from a lower portion of the reaction chamber; a second gas exhaust port for exhausting gas from the upper portion of the reaction chamber; a heater for heating the wafer w; a susceptor for retaining the wafer w; and a rotation drive unit for rotating the wafer w.

摘要翻译： 一种半导体器件的制造装置，包括：加载有晶片w的反应室; 用于从反应室的上部供给包括源气体的第一处理气体的气体供给口; 第一整流板，用于在整流状态下将第一处理气体供应到晶片上; 用于从反应室的下部排出气体的第一排气口; 用于从反应室的上部排出气体的第二排气口; 用于加热晶片w的加热器; 用于保持晶片w的基座; 以及用于旋转晶片w的旋转驱动单元。

公开(公告)号：US20080067024A1

公开(公告)日：2008-03-20

申请号：US11857802

申请日：2007-09-19

申请人： Kunihiko SUZUKI ,  Toshimi Hara ,  Naoyuki Kokubo

发明人： Kunihiko SUZUKI ,  Toshimi Hara ,  Naoyuki Kokubo

IPC分类号： F16D27/115

CPC分类号： F16D27/115 ,  F16D27/004 ,  F16D27/14 ,  F16D2027/008

摘要： In a power transmitting device, projections are formed on a surface of a main cam that faces an armature. This structure causes the main cam to contact the armature only at distal surfaces of the projections. The area of the distal surfaces of the projections is in a range where the magnetic flux density generated at the distal surfaces of the projections by the electromagnet is saturated. Therefore, reduction of the responsiveness and controllability of the power transmitting device due to magnetization of the main cam is suppressed.

摘要翻译： 在动力传递装置中，突起形成在主凸轮面向衔铁的表面上。 这种结构使得主凸轮仅在突起的远侧表面处接触电枢。 凸起的远端表面的面积处于电磁体在突起的远端表面产生的磁通密度饱和的范围。 因此，抑制了由主凸轮的磁化引起的动力传递装置的响应性和可控性的降低。

公开(公告)号：US20070111842A1

公开(公告)日：2007-05-17

申请号：US11560064

申请日：2006-11-15

申请人： Kunihiko SUZUKI ,  Shinichiro Nakajima ,  Hiroshi Kushino

发明人： Kunihiko SUZUKI ,  Shinichiro Nakajima ,  Hiroshi Kushino

IPC分类号： F16H48/06

CPC分类号： F16H48/30 ,  F16H48/10 ,  F16H48/22 ,  F16H48/34 ,  F16H48/40 ,  F16H2048/204 ,  F16H2048/346

摘要： A power transmission apparatus is provided with a housing, which rotates together with an input shaft, a differential mechanism, and a main clutch. The main clutch links the input shaft and the first output shaft. The differential mechanism distributes drive force that is inputted from the input shaft via the housing into a first output shaft and a second output shaft. The differential mechanism is provided with a ring gear that is provided within the housing, a sun gear that is provided within the ring gear, and a planetary gear. The planetary gear is engaged with the ring gear and the sun gear and supported in such a manner as to be orbital and rotational. The first output shaft is linked to the ring gear. The main clutch is formed of a plurality of outer clutch plates and inner clutch plates, which are provided on the inner circumferential surface of the housing and on the outer circumferential surface of the ring gear.

摘要翻译： 动力传递装置设置有与输入轴，差速机构和主离合器一起旋转的壳体。 主离合器连接输入轴和第一输出轴。 差速机构经由壳体将从输入轴输入的驱动力分配到第一输出轴和第二输出轴。 差速机构设置有设置在壳体内的齿圈，设置在齿圈内的太阳齿轮和行星齿轮。 行星齿轮与环形齿轮和太阳齿轮接合，并且以轨道和旋转的方式支撑。 第一输出轴连接到齿圈。 主离合器由设置在壳体的内周面和环形齿轮的外周面上的多个外离合器片和内离合器片构成。