公开(公告)号：US09318506B2

公开(公告)日：2016-04-19

申请号：US13540029

申请日：2012-07-02

申请人： Yuta Endo ,  Junichi Koezuka ,  Yuichi Sato

发明人： Yuta Endo ,  Junichi Koezuka ,  Yuichi Sato

IPC分类号： H01L21/00 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L27/1225 ,  H01L27/1218 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/7869

摘要： An object of an embodiment of the present invention is to provide a semiconductor device which includes a transistor including an oxide semiconductor with high field-effect mobility, a small variation in threshold voltage, and high reliability. The semiconductor device includes a transistor which includes an insulating substrate from which oxygen is released by heat treatment and an oxide semiconductor film over the insulating substrate. A channel is formed in the oxide semiconductor film. The insulating substrate from which oxygen is released by heat treatment can be manufactured by implanting oxygen ions into at least a region of an insulating substrate on the side provided with the oxide semiconductor film.

摘要翻译： 本发明的一个实施例的目的是提供一种半导体器件，其包括具有高场效应迁移率的氧化物半导体，阈值电压变化小，可靠性高的晶体管。 半导体器件包括晶体管，其包括通过热处理释放氧的绝缘基板和绝缘基板上的氧化物半导体膜。 在氧化物半导体膜中形成沟道。 通过热处理释放氧的绝缘基板可以通过在设置有氧化物半导体膜的一侧的绝缘基板的至少一个区域中注入氧离子来制造。

公开(公告)号：US08829586B2

公开(公告)日：2014-09-09

申请号：US13014075

申请日：2011-01-26

申请人： Yuta Endo ,  Takayuki Saito ,  Shunpei Yamazaki

发明人： Yuta Endo ,  Takayuki Saito ,  Shunpei Yamazaki

IPC分类号： H01L29/76 ,  H01L21/36 ,  H01L27/12 ,  H01L21/02 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

摘要： In a miniaturized transistor, a gate insulating layer is required to reduce its thickness; however, in the case where the gate insulating layer is a single layer of a silicon oxide film, a physical limit on thinning of the gate insulating layer might occur due to an increase in tunneling current, i.e. gate leakage current. With the use of a high-k film whose relative permittivity is higher than or equal to 10 is used for the gate insulating layer, gate leakage current of the miniaturized transistor is reduced. With the use of the high-k film as a first insulating layer whose relative permittivity is higher than that of a second insulating layer in contact with an oxide semiconductor layer, the thickness of the gate insulating layer can be thinner than a thickness of a gate insulating layer considered in terms of a silicon oxide film.

摘要翻译： 在小型化晶体管中，需要栅极绝缘层来减小其厚度; 然而，在栅绝缘层是单层氧化硅膜的情况下，由于隧穿电流（即栅极漏电流）的增加，可能会发生栅极绝缘层变薄的物理极限。 通过使用栅极绝缘层使用相对介电常数高于或等于10的高k膜，减小了小型化晶体管的栅极漏电流。 通过使用高k膜作为相对介电常数高于与氧化物半导体层接触的第二绝缘层的第一绝缘层的第一绝缘层，栅绝缘层的厚度可以比栅的厚度薄 根据氧化硅膜考虑的绝缘层。

公开(公告)号：US08143170B2

公开(公告)日：2012-03-27

申请号：US12704704

申请日：2010-02-12

申请人： Hidekazu Miyairi ,  Yuta Endo

发明人： Hidekazu Miyairi ,  Yuta Endo

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/027 ,  H01L21/00 ,  H01L21/84 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1288 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/66772 ,  Y10S438/942

摘要： A single crystal semiconductor layer is provided over a base substrate with a second insulating film, a first conductive film, and a first insulating film interposed therebetween; an impurity element having one conductivity type is selectively added to the single crystal semiconductor layer, using a first resist mask; the first resist mask is removed; a second conductive film is formed over the single crystal semiconductor layer; a second resist mask having a depression is formed over the second conductive film; a first etching is performed on the first insulating film, the first conductive film, the second insulating film, the single crystal semiconductor layer, and the second conductive film, using the second resist mask; and a second etching with accompanying side-etching is performed on a part of the first conductive film to form a pattern of a gate electrode layer.

摘要翻译： 在基底基板上设置单晶半导体层，其具有第二绝缘膜，第一导电膜和介于其间的第一绝缘膜; 使用第一抗蚀剂掩模将具有一种导电类型的杂质元素选择性地添加到单晶半导体层; 第一个抗蚀剂掩模被去除; 在单晶半导体层上形成第二导电膜; 在第二导电膜上形成具有凹陷的第二抗蚀剂掩模; 使用第二抗蚀剂掩模对第一绝缘膜，第一导电膜，第二绝缘膜，单晶半导体层和第二导电膜进行第一蚀刻; 并且在第一导电膜的一部分上进行伴随的侧蚀刻的第二蚀刻，以形成栅极电极层的图案。

公开(公告)号：US08120491B2

公开(公告)日：2012-02-21

申请号：US12787921

申请日：2010-05-26

申请人： Yuta Endo ,  Noriaki Uto ,  Satohiro Okamoto

发明人： Yuta Endo ,  Noriaki Uto ,  Satohiro Okamoto

IPC分类号： G08B13/14

CPC分类号： G08G1/017 ,  G06K17/0022 ,  G06K19/07749 ,  G08G1/052 ,  H04B5/0056

摘要： An RFID tag having a memory portion for holding information on a wheeled vehicle is mounted on the wheeled vehicle, and an external interrogator and the RFID tag exchange information with each other. Further, an RFID tag having a memory portion for holding information on a wheeled vehicle and a communication device for exchanging information with the RFID tag are set on the wheeled vehicle. When the external interrogator and the RFID tag exchange information with each other, the communication device holds information of a situation, for example, speed information, information on date and time, and the like in the memory portion in the RFID tag.

摘要翻译： 具有用于在轮式车辆上保持信息的存储部分的RFID标签安装在轮式车辆上，并且外部询问器和RFID标签彼此交换信息。 此外，具有用于保持轮式车辆上的信息的存储部分和用于与RFID标签交换信息的通信装置的RFID标签设置在轮式车辆上。 当外部询问器和RFID标签彼此交换信息时，通信装置将RFID信息的存储部分中的信息，例如速度信息，日期和时间信息等信息保存。

公开(公告)号：US20120001335A1

公开(公告)日：2012-01-05

申请号：US13171834

申请日：2011-06-29

申请人： Tetsuhiro Tanaka ,  Yuta Endo

发明人： Tetsuhiro Tanaka ,  Yuta Endo

IPC分类号： H01L23/48 ,  H01L21/28

CPC分类号： H01L29/458 ,  H01L21/76804 ,  H01L21/76834 ,  H01L21/76882 ,  H01L21/76883

摘要： Provided is a method for manufacturing a semiconductor device having favorable electric characteristics with a high yield. A groove and/or a contact hole reaching a semiconductor region or a conductive region is formed in an insulating film covering the semiconductor region or the conductive region; a first conductive film is formed in the groove and/or the contact hole; the first conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas and to an atmosphere containing water to be fluidized partially or entirely; and a second conductive film is formed over the first conductive film.

摘要翻译： 提供一种以高产率制造具有良好的电特性的半导体器件的方法。 在覆盖半导体区域或导电区域的绝缘膜中形成到达半导体区域或导电区域的沟槽和/或接触孔; 在沟槽和/或接触孔中形成第一导电膜; 第一导电膜暴露于由氧化性气体和卤素系气体的混合气体产生的等离子体，并且含有水的气氛部分或全部被流化; 并且在第一导电膜上形成第二导电膜。

公开(公告)号：US07951689B2

公开(公告)日：2011-05-31

申请号：US12232131

申请日：2008-09-11

申请人： Kengo Akimoto ,  Yuta Endo

发明人： Kengo Akimoto ,  Yuta Endo

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： A highly reliable semiconductor device capable of high speed operation is manufactured over a flexible substrate at a high yield. A separation layer is formed over an insulating substrate by a sputtering method; the separation layer is flattened by a reverse sputtering method; an insulating film is formed over the flattened separation layer; a damaged area is formed by introducing hydrogen or the like into a semiconductor substrate; an insulating film is formed over the semiconductor substrate in which the damaged area is formed; the insulating film formed over the insulating substrate is bonded to the insulating film formed over the semiconductor substrate, the semiconductor substrate is separated at the damaged area so that a semiconductor layer is formed over the insulating substrate; the semiconductor layer is flattened so as to form an SOI substrate; and the semiconductor device is formed over the SOI substrate.

摘要翻译： 以高产率在柔性基板上制造能够进行高速运转的高度可靠的半导体装置。 通过溅射法在绝缘基板上形成分离层; 分离层通过反溅射法平坦化; 在平坦化的分离层上形成绝缘膜; 通过将氢等引入到半导体衬底中形成损伤区域; 在形成有损坏区域的半导体基板上形成绝缘膜; 形成在绝缘基板上的绝缘膜与半导体衬底上形成的绝缘膜接合，半导体衬底在损坏区域分离，从而在绝缘衬底上形成半导体层; 半导体层被平坦化以形成SOI衬底; 并且半导体器件形成在SOI衬底上。

公开(公告)号：US07737852B2

公开(公告)日：2010-06-15

申请号：US11902387

申请日：2007-09-21

申请人： Yuta Endo ,  Noriaki Uto ,  Satohiro Okamoto

发明人： Yuta Endo ,  Noriaki Uto ,  Satohiro Okamoto

IPC分类号： G08B13/14

CPC分类号： G08G1/017 ,  G06K17/0022 ,  G06K19/07749 ,  G08G1/052 ,  H04B5/0056

摘要： An RFID tag having a memory portion for holding information on a wheeled vehicle is mounted on the wheeled vehicle, and an external interrogator and the RFID tag exchange information with each other. Further, an RFID tag having a memory portion for holding information on a wheeled vehicle and a communication device for exchanging information with the RFID tag are set on the wheeled vehicle. When the external interrogator and the RFID tag exchange information with each other, the communication device holds information of a situation, for example, speed information, information on date and time, and the like in the memory portion in the RFID tag.

摘要翻译： 具有用于在轮式车辆上保持信息的存储部分的RFID标签安装在轮式车辆上，并且外部询问器和RFID标签彼此交换信息。 此外，具有用于保持轮式车辆上的信息的存储部分和用于与RFID标签交换信息的通信装置的RFID标签设置在轮式车辆上。 当外部询问器和RFID标签彼此交换信息时，通信装置将RFID信息的存储部分中的信息，例如速度信息，日期和时间信息等信息保存。