中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

76 records (took 0.035 seconds)

    Drain switched split amplifier with capacitor switching for noise figure and isolation improvement in split mode
    32.
    发明授权
    Drain switched split amplifier with capacitor switching for noise figure and isolation improvement in split mode 有权

    公开(公告)号：US11239801B2

    公开(公告)日：2022-02-01

    申请号：US15931236

    申请日：2020-05-13

    Applicant: pSemi Corporation

    Inventor： Kashish Pal ,  Emre Ayranci ,  Miles Sanner

    IPC: H03F3/193 ,  H03F1/22 ,  H03F1/26 ,  H04L27/26 ,  H03F3/68 ,  H03F1/02

    Abstract: An amplifier circuit configuration capable of processing non-contiguous intra-band carrier aggregate (CA) signals using amplifiers is disclosed herein. In some cases, each of a plurality of amplifiers is an amplifier configured as a cascode (i.e., a two-stage amplifier having two transistors, the first configured as a “common source” input transistor, e.g., input field effect transistor (FET), and the second configured in a “common gate” configuration as a cascode output transistor, (e.g. cascode output FET). In other embodiments, the amplifier may have additional transistors (i.e., more than two stages and/or stacked transistors). The amplifier circuit configuration can be operated in either single mode or split mode. A switchable coupling is placed between the drain of the input FETs of each amplifier within the amplifier circuit configuration. During split mode, the coupling is added to the circuit to allow some of the signal present at the drain of each input FET to be coupled to the drain of the other input FET.

    Programmable Optimized Band Switching LNA
    33.
    发明申请
    Programmable Optimized Band Switching LNA 有权

    公开(公告)号：US20210143779A1

    公开(公告)日：2021-05-13

    申请号：US16953141

    申请日：2020-11-19

    Applicant: pSemi Corporation

    Inventor： Emre Ayranci ,  Miles Sanner

    IPC: H03F3/195 ,  H03F1/02 ,  H03H11/28 ,  H04B1/16 ,  H03H7/38 ,  H03F1/22 ,  H03F1/56 ,  H03F3/193 ,  H03F3/72 ,  H04B1/00

    Abstract: A front end module (FEM) integrated circuit (IC) architecture that uses the same LNA in each of several frequency bands extending over a wide frequency range. In some embodiments, switched impedance circuits distributed throughout the front end circuit allow selection of the frequency response and impedances that are optimized for particular performance parameters targeted for a desired device characteristic. Such switched impedance circuits tune the output and input impedance match and adjust the gain of the LNA for specific operating frequencies and gain targets. In addition, adjustments to the bias of the LNA can be used to optimize performance trade-offs between the total direct current (DC) power dissipated versus radio frequency (RF) performance. By selecting appropriate impedances throughout the circuit using switched impedance circuits, the LNA can be selectively tuned to operate optimally at a selected bias for operation within selected frequency bands.

    Programmable optimized band switching LNA for operation in multiple narrow-band frequency ranges
    34.
    发明授权
    Programmable optimized band switching LNA for operation in multiple narrow-band frequency ranges 有权

    公开(公告)号：US10862441B2

    公开(公告)日：2020-12-08

    申请号：US16664646

    申请日：2019-10-25

    Applicant: pSemi Corporation

    Inventor： Emre Ayranci ,  Miles Sanner

    IPC: H03F3/191 ,  H03F1/22 ,  H03F3/195 ,  H03F1/02 ,  H03H11/28 ,  H04B1/16 ,  H03H7/38 ,  H03F1/56 ,  H03F3/193 ,  H03F3/72 ,  H04B1/00

    Abstract: A front end module (FEM) integrated circuit (IC) architecture that uses the same LNA in each of several frequency bands extending over a wide frequency range. In some embodiments, switched impedance circuits distributed throughout the front end circuit allow selection of the frequency response and impedances that are optimized for particular performance parameters targeted for a desired device characteristic. Such switched impedance circuits tune the output and input impedance match and adjust the gain of the LNA for specific operating frequencies and gain targets. In addition, adjustments to the bias of the LNA can be used to optimize performance trade-offs between the total direct current (DC) power dissipated versus radio frequency (RF) performance. By selecting appropriate impedances throughout the circuit using switched impedance circuits, the LNA can be selectively tuned to operate optimally at a selected bias for operation within selected frequency bands.

    Adaptive Tuning Networks with Direct Mapped Multiple Channel Filter Tuning
    35.
    发明申请
    Adaptive Tuning Networks with Direct Mapped Multiple Channel Filter Tuning 审中-公开

    公开(公告)号：US20200321935A1

    公开(公告)日：2020-10-08

    申请号：US16852275

    申请日：2020-04-17

    Applicant: pSemi Corporation

    Inventor： Emre Ayranci ,  Miles Sanner ,  Ke Li ,  James Francis McElwee ,  Tero Tapio Ranta ,  Kevin Roberts ,  Chih-Chieh Cheng

    IPC: H03H7/01 ,  H04B1/00 ,  H04W72/04

    Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability. In a third version, CA direct mapped adaptive tuning networks include filter tuning blocks for selected lower frequency bands.

    Configurable wideband split LNA
    36.
    发明授权
    Configurable wideband split LNA 有权

    公开(公告)号：US10700650B1

    公开(公告)日：2020-06-30

    申请号：US16242883

    申请日：2019-01-08

    Applicant: pSemi Corporation

    Inventor： Emre Ayranci ,  Miles Sanner ,  Phanindra Yerramilli

    IPC: H03F3/191 ,  H03F3/195 ,  H03F1/56 ,  H04B1/16

    Abstract: Methods and devices addressing design of wideband LNAs with gain modes are disclosed. The disclosed teachings can be used to reconfigure RF receiver front-end to operate in various applications imposing stringent and conflicting requirements. Wideband and narrowband input and output matching with gain modes using a combination of the same hardware and a switching network are also disclosed. The described methods and devices also address carrier aggregation requirements and provide solutions that can be used both in single-mode and split-mode operations.

    Adaptive tuning networks with direct mapped multiple channel filter tuning
    39.
    发明授权
    Adaptive tuning networks with direct mapped multiple channel filter tuning 有权

    公开(公告)号：US12237821B2

    公开(公告)日：2025-02-25

    申请号：US18492357

    申请日：2023-10-23

    Applicant: pSemi Corporation

    Inventor： Emre Ayranci ,  Miles Sanner ,  Ke Li ,  James Francis McElwee ,  Tero Tapio Ranta ,  Kevin Roberts ,  Chih-Chieh Cheng

    IPC: H04B1/04 ,  H01B1/00 ,  H03H7/01 ,  H03H7/38 ,  H04B1/00 ,  H04B1/40 ,  H04W72/0453 ,  H04W88/06 ,  H04L5/00 ,  H04W28/06

    Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability. In a third version, CA direct mapped adaptive tuning networks include filter tuning blocks for selected lower frequency bands.

    Drain switched split amplifier with capacitor switching for noise figure and isolation improvement in split mode
    40.
    发明授权
    Drain switched split amplifier with capacitor switching for noise figure and isolation improvement in split mode 有权

    公开(公告)号：US12218637B2

    公开(公告)日：2025-02-04

    申请号：US18534153

    申请日：2023-12-08

    Applicant: pSemi Corporation

    Inventor： Kashish Pal ,  Emre Ayranci ,  Miles Sanner

    IPC: H03F1/02 ,  H03F1/22 ,  H03F1/26 ,  H03F3/193 ,  H03F3/68 ,  H04L27/26

    Abstract: An amplifier circuit configuration capable of processing non-contiguous intra-band carrier aggregate (CA) signals using amplifiers is disclosed herein. In some cases, each of a plurality of amplifiers is an amplifier configured as a cascode (i.e., a two-stage amplifier having two transistors, the first configured as a “common source” input transistor, e.g., input field effect transistor (FET), and the second configured in a “common gate” configuration as a cascode output transistor, (e.g. cascode output FET). In other embodiments, the amplifier may have additional transistors (i.e., more than two stages and/or stacked transistors). The amplifier circuit configuration can be operated in either single mode or split mode. A switchable coupling is placed between the drain of the input FETs of each amplifier within the amplifier circuit configuration. During split mode, the coupling is added to the circuit to allow some of the signal present at the drain of each input FET to be coupled to the drain of the other input FET.

Patent Agency Ranking