公开(公告)号：US4887049A

公开(公告)日：1989-12-12

申请号：US162701

申请日：1988-03-01

申请人： Clifford M. Krowne

发明人： Clifford M. Krowne

IPC分类号： H03F3/55

CPC分类号： H03F3/55

摘要： A fully monolithic solid state device compatible with standard semiconduc processing for amplifying radio frequency (RF) microwave and/or millimeter wave signals is disclosed. The device includes an input microstrip transmission line which capacitively couples an input RF signal to input underlying grating fingers which, in turn, mode-couple the signal to an interaction grating region by way of an input finger taper region. The RF is amplified in the interaction grating region through its interaction with a space charge wave. Then the amplified RF signal is mode-coupled to output underlying grating fingers by way of an output finger taper region before it is capacitively coupled to an output microstrip transmission line.

摘要翻译： 公开了一种与用于放大射频（RF）微波和/或毫米波信号的标准半导体处理兼容的完全单片固态器件。 该装置包括输入微带传输线，其将输入RF信号电容耦合到输入的下面的光栅指，其又通过输入指锥度区域将信号模拟耦合到相互作用光栅区域。 RF通过其与空间电荷波的相互作用在相互作用光栅区域中被放大。 然后，放大的RF信号通过输出指状锥形区域在与电容耦合到输出微带传输线之前进行模式耦合以输出下面的光栅指。

公开(公告)号：US4621239A

公开(公告)日：1986-11-04

申请号：US717741

申请日：1985-03-29

申请人： Hua Q. Tserng

发明人： Hua Q. Tserng

IPC分类号： H03B5/12 ,  H03B5/18 ,  H03F3/55 ,  H03B5/24

CPC分类号： H03F3/55 ,  H03B5/1206 ,  H03B5/1228 ,  H03B5/1852

摘要： The disclosure relates to a gallium arsenide travelling-wave transistor oscillator which extends the oscillation frequency of the individual FETs by connecting them in parallel across a pair of inductive arrangements, either in common-gate or common-source configurations.

摘要翻译： 本公开涉及砷化镓行波晶体管振荡器，其通过在共栅或共源配置中的一对电感布置并联连接来扩展各个FET的振荡频率。

公开(公告)号：US4539528A

公开(公告)日：1985-09-03

申请号：US528201

申请日：1983-08-31

申请人： Burhan Bayraktaroglu ,  Bumman Kim ,  William Frensley

发明人： Burhan Bayraktaroglu ,  Bumman Kim ,  William Frensley

IPC分类号： H03F3/195 ,  H03F3/54 ,  H03F3/55 ,  H03F3/60

CPC分类号： H03F3/55 ,  H03F3/608

摘要： A two-port monolithic microwave amplifier, which uses a distributed negative resistance diode with gain (such as an IMPATT diode) as an active element. The diode is tapered (increasing in width but not in thickness) so that, as the RF signal propagates along the diode, it sees a wider and wider active diode region. This diode is operated in the power-saturated region, so that, as the RF signal propagates along the diode, terminal voltage remains essentially constant, but the RF current increases. This configuration is inherently undirectional.

摘要翻译： 双端口单片微波放大器，其使用具有增益的分布式负电阻二极管（例如IMPATT二极管）作为有源元件。 二极管是锥形的（宽度增加而不是厚度），使得当RF信号沿着二极管传播时，其看到更宽和更宽的有源二极管区域。 该二极管在功率饱和区域工作，因此随着RF信号沿着二极管传播，端子电压保持基本恒定，但RF电流增加。 这种配置本质上是无方向的。

公开(公告)号：US4099132A

公开(公告)日：1978-07-04

申请号：US831350

申请日：1977-09-07

申请人： Gerard Kantorowicz

发明人： Gerard Kantorowicz

IPC分类号： H03F3/55 ,  H03F3/04

CPC分类号： H03F3/55

摘要： A negative differential mobility amplifier with a layer of semiconductor material of negative differential mobility. Two electrodes formed by two metallic combs are disposed on the free surface of the layer of semiconductor material. Overlapping fingers of the metallic combs are orthogonal to the propagation direction of the progressive wave and form an ohmic contact with the free surface of the semiconductor layer. The semiconductor layer is deposited onto a first surface of a dielectric substrate. A second surface of the dielectric substrate opposite to the first surface is provided with a metallic plate. The two electrodes are brought in operation to different electrical d.c. biassing potentials by a biassing source and to the high frequency potential of the progressive wave to be amplified. A line of asymetric parallel bands is formed by the metallic plate, the metallic combs, and the dielectric substrate.

摘要翻译： 具有负差分迁移率的半导体材料层的负差分迁移率放大器。 由两个金属梳形成的两个电极设置在半导体材料层的自由表面上。 金属梳子的重叠指状物与行进波的传播方向正交，与半导体层的自由表面形成欧姆接触。 半导体层沉积在电介质基片的第一表面上。 电介质基板与第一表面相对的第二表面设置有金属板。 两个电极被运行到不同的电气直流 通过偏置源偏置电位和待放大的逐行波的高频电位。 由金属板，金属梳和电介质基板形成一行非对称平行带。

公开(公告)号：US3833858A

公开(公告)日：1974-09-03

申请号：US37037073

申请日：1973-06-15

申请人： UNIV UTAH

发明人： GANDHI O ,  METZ L

IPC分类号： H03F3/55 ,  H03F3/04

CPC分类号： H03F3/55

摘要： Traveling-wave amplification of microwave energy having frequencies up to 500 GHz is provided by a semiconductor (GaAs, GaP, InAs, InP) which has a thin epitaxial layer capable of exhibiting the property of negative differential conductivity. A thin resistive layer is applied on the skin of the epitaxial layer to smooth out the dc electric field profile and allow use of longer layers with a selective control of band pass and gain properties of the amplifier.

公开(公告)号：US3621411A

公开(公告)日：1971-11-16

申请号：US3621411D

申请日：1969-11-13

申请人： TEXAS INSTRUMENTS INC

发明人： WISSEMAN WILLIAM R

IPC分类号： H01L45/02 ,  H03F3/55 ,  H03F3/04

CPC分类号： H01L45/02 ,  H03F3/55

摘要： Power amplification of a radiofrequency signal is achieved in a two-valley semiconductor material such a gallium arsenide (GaAs). To achieve amplification of the radiofrequency signal, a slow wave circuit, such as a meandering line is required to slow the propagating velocity of an electromagnetic wave in the two-valley semiconductor material below the velocity of the charge carriers. The slow wave circuit may be formed by printed circuit techniques on the surface of the semiconductor wafer. For high-gain amplification or self-oscillation, a DC or pulse source generates an electric field in the semiconductor so that the carriers drift in the direction of the radiofrequency wave propagation. The magnitude of the electric field applied to the semiconductor material is adjusted such that the rate of change of conductivity vanishes.

公开(公告)号：US3401347A

公开(公告)日：1968-09-10

申请号：US63202267

申请日：1967-04-19

申请人： NIPPON TELEGRAPH & TELEPHONE

发明人： MASAO SUMI

IPC分类号： H01L45/02 ,  H01L47/00 ,  H03F3/55

CPC分类号： H03F3/55 ,  H01L45/02 ,  H01L47/00

公开(公告)号：US20170117860A1

公开(公告)日：2017-04-27

申请号：US15299288

申请日：2016-10-20

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Naoki ITABASHI ,  Keiji TANAKA

IPC分类号： H03F3/55 ,  H03F1/48 ,  H03F1/56 ,  H03F3/45 ,  H03F3/60

CPC分类号： H03F3/55 ,  H03F1/48 ,  H03F1/565 ,  H03F3/4508 ,  H03F3/45475 ,  H03F3/602 ,  H03F3/605 ,  H03F2200/387 ,  H03F2200/451

摘要： An amplifier including a pre-amplifier, an impedance converter, and a traveling wave amplifier (TWA) is disclosed. The pre-amplifier receives a differential input signal and has a pair of first output nodes that output a first differential signal by amplifying the differential input signal. Each first output node has first output impedance. The impedance converter includes a pair of first input nodes that receive the first differential signal and a pair of second output nodes that output a second differential signal. Each first input node has first input impedance greater than the first output impedance. The impedance converter converts the first differential signal into the second differential signal. Each second output node has second output impedance smaller than the first output impedance. The TWA includes a pair of transmission lines connected to the pair of the second output nodes. Each transmission line has characteristic impedance matching with the second output impedance.

公开(公告)号：US20140347123A1

公开(公告)日：2014-11-27

申请号：US14287282

申请日：2014-05-27

申请人： Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.

发明人： Philippe Dennler

IPC分类号： H03F3/55 ,  H03F3/21 ,  H03F3/19

CPC分类号： H03F3/55 ,  H03F1/42 ,  H03F3/19 ,  H03F3/195 ,  H03F3/211 ,  H03F3/245 ,  H03F3/602 ,  H03F3/68 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/39 ,  H03F2200/411 ,  H03F2200/423

摘要： An amplifier (1) is provided, in particular, wideband amplifier with an input (4) and an output (5) comprising a first amplifier stage (2) and a second amplifier stage (3), wherein the first amplifier stage (2) has an active power splitter with at least one injection point, wherein this injection point corresponds to the input (4) of the amplifier, and at least two discharge points (9a, 9b), wherein this active power splitter is formed according to a traveling wave amplifier principle and the second amplifier stage (3) has at least two injection points (11a, 11b) and at least one discharge point, wherein this discharge point corresponds to the output (5) of the amplifier and is formed as a power coupler. It is essential that the second amplifier stage (3) is formed as a power coupler, wherein this power coupler is formed according to the principle of a reactively matched amplifier.

摘要翻译： 放大器（1）特别地提供具有输入（4）的宽带放大器和包括第一放大级（2）和第二放大级（3）的输出（5），其中第一放大级（2） 具有至少一个注入点的有功功率分配器，其中该注入点对应于放大器的输入端（4）和至少两个放电点（9a，9b），其中该有源功率分配器根据行进 波长放大器原理和第二放大器级（3）具有至少两个注入点（11a，11b）和至少一个放电点，其中该放电点对应于放大器的输出（5）并且形成为功率耦合器 。 重要的是，第二放大器级（3）形成为功率耦合器，其中根据反应匹配放大器的原理形成该功率耦合器。

公开(公告)号：US20130135046A1

公开(公告)日：2013-05-30

申请号：US13662083

申请日：2012-10-26

申请人： Sumitomo Electric Industries, Ltd. ,  National University Corporation Toyohashi Univers

发明人： Satoshi Hatsukawa ,  Kazuhiro Fujikawa ,  Takashi Tsuno ,  Nobuo Shiga ,  Takashi Ohira ,  Kazuyuki Wada ,  Tuya Wuren ,  Kotaro Tanimura

IPC分类号： H03K17/687

CPC分类号： H03K17/687 ,  H02M1/08 ,  H02M3/158 ,  H03F1/0211 ,  H03F1/0222 ,  H03F3/16 ,  H03F3/217 ,  H03F3/45 ,  H03F3/55 ,  H03F3/607 ,  H03F2200/102 ,  H03F2200/351 ,  Y10T307/747

摘要： A switching circuit 33 comprises a connection circuit cascade-connecting control terminals for controlling switching of n number of transistors M1-Mn via n−1 number of coils L1 respectively (n is an integer equal to or more than 2; and coils L3 respectively connected between one end of each of the transistors M1-Mn and other end of a coil L2, one end of the coil L2 being electrically connected to a DC power source. The transistors M1-Mn is sequentially switched with PWM signals inputted to an input terminal of the connection circuit. The switching circuit 33 further comprises a transistor M0 inserted at the one end or the other end of the coil L2 in cascade-connection.

摘要翻译： 开关电路33包括连接电路级联连接控制端子，用于分别经由n-1个线圈L1（n为等于或等于2的整数）控制n个晶体管M1-Mn的切换;以及分别连接的线圈L3 在每个晶体管M1-Mn的一端和线圈L2的另一端之间，线圈L2的一端电连接到直流电源，晶体管M1-Mn依次切换输入到输入端的PWM信号 开关电路33还包括以串联方式插入线圈L2的一端或另一端的晶体管M0。