Abstract:
A field emission array adopting carbon nanotubes as an electron emitter source and a method for fabricating same, wherein the fabrication method includes forming a rear substrate assembly including cathodes formed as stripes over a rear substrate, and carbon nanotubes; forming a front substrate assembly including anodes formed as stripes over a front substrate; depositing phosphors on the anodes; forming a plurality of openings separated by a predetermined distance in a nonconductive plate, corresponding to the anodes, and forming gates as stripes perpendicular to the stripes of anodes on the nonconductive plate with a plurality of emitter openings corresponding to the plurality of openings; supporting and separating the nonconductive plate from the rear substrate by a predetermined distance, using spacers; combining the rear substrate assembly with the front substrate assembly so the carbon nanotubes on the cathodes project through the emitter openings at a predetermined distance from the gates.
Abstract:
A field emission array includes a plurality of pixels. Each pixel includes at least one resistor, at least one emitter tip overlying each resistor, and at least one substantially vertically oriented conductive line positioned laterally adjacent each resistor. The pixels may be arranged in substantially parallel lines. Adjacent pixels are separated and electrically isolated from one another by recessed areas located therebetween. Each conductive line is located within a recessed area. The conductive lines of a field emission array that includes lines of pixels may contact the resistors of each pixel of the corresponding line of pixels. Base portions of at least some of the emitter tips of the field emission array may overlie a portion of the conductive line that corresponds to the pixel of which such emitter tips are a part. Field emission displays that include such field emission arrays are also disclosed.
Abstract:
A lapping arrangement for a tungsten filament to prevent the self-contact and short-circuit of the tungsten filament in a light bulb comprising one or more pairs of posts in the form of molybdenum wire with the tungsten filament lapping on the posts. The angle at the lapping posts between a section of the tungsten filament and an adjacent section is equal to or greater than 90null.
Abstract:
A compact self-ballasted fluorescent lamp includes an arc tube formed by a glass tube double-spirally wound from its middle to both ends around a spiral axis, and a cylindrical holding member having a closed bottom and holding the arc tube, a case fit to cover a circumferential wall of the holding member, and the like. End-vicinity parts of the glass tube are formed to have a larger gap with glass tube parts adjacent in the direction of the spiral axis. The arc tube is held in a state where the distance L1 between a first point that is on an outer surface of a glass tube part adjacent to one of the ends of the glass tube in the direction of the spiral axis and a second point on a surface of the end wall facing the first point is about 1.5 mm.
Abstract:
A light emitting element has a base made of heat conductive material, a wire plate made of an insulation material and secured to an upper surface of the base. Conductive patterns are secured to the wire plate, and a light emitting chip is secured to the base at an exposed mounting area. The light emitting chip is electrically connected to the conductive patterns.
Abstract:
An electron emission element of the present invention comprises a substrate, and a protrusion protruding from the substrate and including boron-doped diamond. The protrusion comprises a columnar body. And a tip portion of the protrusion comprises an acicular body sticking out therefrom. The distance r nullcmnull between a center axis and a side face in the columnar body and the boron concentration Nb nullcmnull3null in the diamond satisfy the relationship represented by the following formula (1): 1 r > 10 4 Nb . ( 1 )
Abstract:
A cold-cathode electron source having an improved utilization efficiency of an electron beam and a simple structure. The cold-cathode electron source comprises a gate electrode (4) provided on a substrate (2) through an insulating layer (3) and an emitter (6) extending through the insulating layer (3) and the gate electrode (4) and disposed in an opening of the gate. During the emission of electrons from the emitter (6), the following relationships are satisfied: 10 nullV/nullmnullnull(VanullVg)/(HanullHg)nullVg/Hg; and Vg/Hg nullV/nullmnullnullVanull10null4null(9.7null1.3null1n(Hg))null(1000/Ha)0.5, where Ha nullnullmnull is an anode-emitter distance, Va nullVnull is an anode-emitter voltage, Hg nullnullmnull is a gate-emitter distance, and Vg nullVnull is a gate-emitter voltage.
Abstract translation:具有提高电子束的利用效率和简单结构的冷阴极电子源。 冷阴极电子源包括通过绝缘层(3)设置在基板(2)上的栅极(4)和延伸穿过绝缘层(3)和栅电极(4)的发射极(6) 在门口的开口。 在从发射体(6)发射电子的过程中,满足以下关系:10 V / V m =(Va-Vg)/(Ha-Hg)> = Vg / Hg; 和V g / Hg [V / mum] = Vax 10 -4(9.7-1.3x1n(Hg))x(1000 / Ha)<0.5>,其中Ha [m]是阳极 - 发射极距离, V]是阳极 - 发射极电压,Hg [m]是栅 - 发射极距离,Vg [V]是栅 - 发射极电压。
Abstract:
A protected lamp assembly includes a tubular lamp enclosed within a tubular protective housing. The lamp is supported by grommets or bushings of a resilient material that are retained within the housing. An end cap assembly may include the bushing for the lamp and also support the protective housing. Conductors through the end caps communicate with the lamp electrodes. In alternate embodiments the conductors may emerge from one of the end caps or the end caps may include a conductive coating with a connection to the lamp electrodes.
Abstract:
A high-efficiency electron-emitting device that can emit electron with higher luminance at a voltage lower than conventional electron-emitting devices, as a key device of a flat panel display, image pickup device, electron beam device, microwave traveling-wave tube is provided to improve the carrier injection efficiency and enhance luminance of an organic light-emitting device. A film having space charge with a thickness of 50 nm or less is formed on a surface of a conductive material on which irregularities, amorphous or fibrous materials are formed. The film includes compounds of group 3 atoms such as aluminum nitride, boron nitride, aluminum nitride boron, aluminum nitride gallium, boron nitride gallium and nitrogen atoms, and nitride, carbon, silicon, oxygen and boron such as oxides including nitrogen boron carbon, boron carbide, carbon nitride, boron.
Abstract:
A field-emission electron source element includes a cathode substrate, an insulating layer that is formed on the cathode substrate and has an opening, a lead electrode formed on the insulating layer, and an emitter formed in the opening. A surface layer of an electron emitting region of the emitter is doped with at least one reducing element selected from the group consisting of hydrogen and carbon monoxide. Further, an image display apparatus including the above-mentioned field-emission electron source element is provided. This makes it possible to obtain not only a stable field-emission electron source element that does not cause a current drop even after a high current density operation for a long time but also a high-performance image display apparatus that can maintain a stable display performance over a long period of time.