Abstract:
An MIM type electric element has an upper electrode, a lower electrode, and a barrier layer held therebetween and composed of an insulator or a semiconductor. The lower electrode contains a noble metal crystal having a facet of a plate-shaped crystal formed on a substrate. The facet has a plane given by the crystal face (111) and contains a region having a plane orientation variance angle of not more than 1.degree. by X-ray diffraction.
Abstract:
In an embodiment an ionization detector includes a gate-insulator-substrate electron-emission structure (GIS-EE) configured to emit low-energy electrons, a sample chamber configured for at least one gas to be detected, the sample chamber being adjacent to the GIS-EE and a measuring unit configured to detect and/or select charged particles, wherein the charged particles are due to the emitted electrons and/or comprise the emitted electrons.
Abstract:
Provided in the present disclosure is an electron emitting element 10 including a laminated structure in which a first electrode 1, an electron accelerating layer 6 made of an insulation film, a second electrode 3, and a cover film 7 are laminated in that order, in which the second electrode is an electrode which transmits electrons and emits electrons from a surface thereof, and the cover film is a film which transmits electrons, is a protective film made of a material different from that of the second electrode, and constitutes an electron emission surface 5.
Abstract:
An article of manufacture includes a support structure including a cladding material and defining therein a plurality of substantially parallel cores. The article also includes a plurality of conically-shaped spikes protruding from a first side of the support structure. Each respective conically-shaped spike of the plurality of conically-shaped spikes includes a core material (i) extending through a corresponding core of the plurality of substantially parallel cores and (ii) comprising an axial protrusion that protrudes axially from the cladding material at the first side of the support structure. The axial protrusion of the core material is tapered to form the respective conically-shaped spike. The article also includes a refractory metal layer coating at least a portion of each respective conically-shaped spike and one or more electrodes connected to the refractory metal layer and configured to apply a voltage to the refractory metal layer.
Abstract:
An electron emitting device (100) includes a first electrode (12), a second electrode (52), and a semi-conductive layer (30) provided between the first electrode (12) and the second electrode (52). The semi-conductive layer (30) includes a porous alumina layer (32) having a plurality of pores (34) and silver (42) supported in the plurality of pores (34) of the porous alumina layer (32).
Abstract:
An electron emission element (20) includes a first electrode (30a) and a second electrode (40) which are arranged facing each other, an intermediate layer (50) that is provided between the first electrode (30a) and the second electrode (40), and an insulating layer (60) that is formed with a thickness d1 on a substrate (30). A level difference between the insulating layer (60) and the first electrode (30a) is smaller than the thickness d1 of the insulating layer (60).