Shielded focusing electrode assembly for a photomultiplier tube
    31.
    发明授权
    Shielded focusing electrode assembly for a photomultiplier tube 失效
    用于光电倍增管的屏蔽聚焦电极组件

    公开(公告)号:US4376246A

    公开(公告)日:1983-03-08

    申请号:US227342

    申请日:1981-01-22

    CPC classification number: H01J43/06

    Abstract: An improved photomultiplier tube comprises an evacuated envelope having a faceplate extending across one end thereof. A photoemissive cathode is disposed on the interior surface of the faceplate. A support electrode having a centrally located aperture therethrough is spaced from the faceplate. An electron multiplier assembly is attached to the support electrode. A focusing assembly is disposed about the centrally located aperture in the support electrode on a side of the support electrode opposite the electron multiplier assembly. The focusing electrode assembly comprises an insulating member having a generally tubular body with an interior surface and an exterior surface and having a proximal end and a distal end. A top-cap, having a substantially U-shaped cross-section including a flat central base and two mutually parallel projections at the ends of the base, is attached to the distal end of the insulating member. The parallel projections are directed toward the support electrode and extend along at least a portion of the interior and exterior surfaces of the insulating member. At least one antimony evaporator for forming the photocathode is disposed adjacent to the focusing assembly. One of the projections at the end of the top-cap shields the exterior surface of the insulating member from antimony deposition and thus prevents electrical shorting of the focusing assembly to the support electrode. The other projection shields the interior of the insulating member from impingement by photoelectrons from the photocathode and thereby prevents electrical charging of the insulating member. A focus potential is applied to the top-cap of the focusing electrode assembly to focus the photoelectrons into the electron multiplier assembly.

    Abstract translation: 改进的光电倍增管包括具有延伸穿过其一端的面板的抽真空的外壳。 一个光发射阴极设置在面板的内表面上。 具有穿过其中心定位的孔的支撑电极与面板间隔开。 电子倍增器组件附接到支撑电极。 聚焦组件围绕支撑电极的中心定位的孔布置在与电子倍增器组件相对的支撑电极的一侧上。 聚焦电极组件包括绝缘构件,绝缘构件具有大体上具有内表面和外表面并具有近端和远端的管状体。 具有基本上U形横截面的顶盖附接到绝缘构件的远端,所述顶盖包括平坦的中心基部和在基部的端部处的两个相互平行的突起。 平行的突起指向支撑电极并且沿着绝缘构件的内表面和外表面的至少一部分延伸。 用于形成光电阴极的至少一个锑蒸发器邻近聚焦组件设置。 在顶盖末端的一个突出部分将绝缘部件的外表面与锑沉积屏蔽,从而防止聚焦组件电气短路到支撑电极。 另一个突起屏蔽绝缘构件的内部不受来自光电阴极的光电子的撞击,从而防止绝缘构件的充电。 将焦点电位施加到聚焦电极组件的顶帽以将光电子聚焦到电子倍增器组件中。

    Channel electron multipliers
    32.
    发明授权
    Channel electron multipliers 失效
    通道电子倍增器

    公开(公告)号:US3976905A

    公开(公告)日:1976-08-24

    申请号:US480683

    申请日:1974-06-17

    CPC classification number: H01J43/243

    Abstract: A channel electron multiplier is described having a tubular wall coated w a secondary-electron emitting material and including an electric field for accelerating the electrons, the electric field comprising a plurality of low-resistive conductive rings each alternating with a high-resistive insulating ring. The thickness of the low-resistive rings is many times larger than that of the high-resistive rings, being in the order of tens of microns for the low-resistive rings and at least one order of magnitude lower for the high-resistive rings; and the diameter of the channel tubular walls is also many times larger than the thickness of the high-resistive rings. Both single-channel and multiple-channel electron multipliers are described. A very important advantage, particularly in making multiple-channel multipliers, is the simplicity of the procedure that may be used in constructing such multipliers. Other operational advantages are described.

    Abstract translation: 描述了一种通道电子倍增器,其具有涂覆有二次电子发射材料并包括用于加速电子的电场的管状壁,该电场包括多个与高电阻绝缘环交替的低电阻导电环。 低阻环的厚度比高阻环的厚度大很多倍,低阻环的数量级为几十微米,而高阻环的厚度至少要低一个数量级。 并且通道管状壁的直径也比高阻环的厚度大许多倍。 描述单通道和多通道电子倍增器。 一个非常重要的优点,特别是在制作多通道乘法器时,可以用于构建这样的乘法器的过程的简单性。 描述其他操作优点。

    Electron multiplier formed by twisting fingers in parallel plates
    33.
    发明授权
    Electron multiplier formed by twisting fingers in parallel plates 失效
    电子倍增器由平行板上的手指扭曲形成

    公开(公告)号:US3872337A

    公开(公告)日:1975-03-18

    申请号:US44437074

    申请日:1974-02-21

    Applicant: EMI LTD

    CPC classification number: H01J43/20

    Abstract: A multichannel electron multiplier has a plurality of multiplying stages. Each stage is formed from a flat plate of secondary electron emissive material slit into a plurality of fingers. Alternate fingers are twisted out of the plane of the plate at right angles thereto. The twisted fingers in successive stages are staggered to provide a plurality of zigzag electron multiplying channels. The source of electrons to be multiplied in a photo-electron emissive cathode and light is focused or collimated onto the photocathode at positions corresponding to the multiplying channels. In a second embodiment, the faceplate of a multiplier tube is a fibre optics plate and light is directed onto it by fibre optics light guides to positions corresponding to the multiplying channels. A focusing electrode is disposed between the photocathode and the first multiplying stage and serves to focus electrons onto the twisted fingers. The non-twisted fingers also help to focus electrons onto the twisted fingers in successive multiplying stages along the multiplying channels.

    Abstract translation: 多通道电子倍增器具有多个倍增级。 每个阶段由二次电子发射材料的平板形成为多个指状物。 替代的手指以与其成直角的方式扭转出板的平面。 扭转的手指在连续的阶段是交错的以提供多个之字形电子倍增通道。 在光电子发射阴极和光中乘以的电子源在对应于倍增通道的位置处聚焦或准直到光电阴极上。 在第二实施例中,乘法器管的面板是光纤板,并且光通过光纤光导被引导到与乘法通道相对应的位置。 聚光电极设置在光电阴极和第一倍增台之间,用于将电子聚焦到扭转的指状物上。 非扭转的手指还有助于沿着乘法通道在连续的乘法阶段中将电子聚焦到扭转的手指上。

    Microstructure photomultiplier assembly
    35.
    发明授权
    Microstructure photomultiplier assembly 有权
    微结构光电倍增器组件

    公开(公告)号:US08507838B2

    公开(公告)日:2013-08-13

    申请号:US12940366

    申请日:2010-11-05

    CPC classification number: H01J43/22

    Abstract: The Microstructure Photomultiplier Assembly (MPA) enables the effective conversion of light signals (received at the front of the assembly) into readily-detectable electrical signals. The MPA comprises a photocathode, followed by an electron-multiplying plate(s) made from an insulating substrate which does not emit sufficient contaminants to poison the photocathode. Each plate is coated with a conductive layer. The front face of each plate is further coated with a layer of secondary electron-emissive material which, when struck by an incoming electron, can produce secondary electrons. Each plate is perforated with channels. The channels are designed to promote the efficient transfer and acceleration of electrons through the channels, under an applied voltage differential across the plate(s). An anode (pixelated or non-pixelated) at the end of the last plate collects the electrons and generates an electrical signal. The MPA is contained within a vacuum enclosure.

    Abstract translation: 微结构光电倍增器组件(MPA)可以将光信号(在组件前面接收)有效转换成易于检测的电信号。 MPA包括光电阴极,随后是由绝缘基板制成的电子倍增板,其不会发出足够的污染物来中和光电阴极。 每个板涂有导电层。 每个板的前表面进一步涂覆有一层二次电子发射材料,当被入射的电子撞击时,其可以产生二次电子。 每个板都穿孔。 这些通道被设计用于在穿过该板的施加的电压差下促进电子通过通道的有效传递和加速。 在最后一个板的末端的阳极(像素化或非像素化)收集电子并产生电信号。 MPA包含在真空外壳内。

    MICROCHANNEL PLATE AND ITS MANUFACTURING METHOD
    36.
    发明申请
    MICROCHANNEL PLATE AND ITS MANUFACTURING METHOD 有权
    微通道板及其制造方法

    公开(公告)号:US20120187278A1

    公开(公告)日:2012-07-26

    申请号:US13383001

    申请日:2010-07-08

    CPC classification number: H01J43/246

    Abstract: A microchannel plate (1) having an array of channels (5),includes a substrate (2) and, deposited on the substrate, a hydrogenated amorphous silicon film (3) having a thickness ranging between 50 μm and 200 μm, preferably between 80 μm and 120 μm, the film including the array of channels (5). Preferably, the substrate (2) is an integrated circuit having an internal electronic readout circuit and pixilated collection electrodes (8), and the film (3) is integrated on the substrate (2). The channels (5) may be formed by a Deep Reactive Ion Etching (DRIE) process.

    Abstract translation: 具有通道阵列(5)的微通道板(1)包括衬底(2)并沉积在衬底上的氢化非晶硅膜(3),其厚度介于50μm和200μm之间,优选在80 μm和120μm,该膜包括通道阵列(5)。 优选地,基板(2)是具有内部电子读出电路和像素化收集电极(8)的集成电路,并且膜(3)被集成在基板(2)上。 通道(5)可以通过深反应离子蚀刻(DRIE)工艺形成。

    METHOD OF MANUFACTURING A GAS ELECTRON MULTIPLIER
    39.
    发明申请
    METHOD OF MANUFACTURING A GAS ELECTRON MULTIPLIER 有权
    制造气体电子乘法器的方法

    公开(公告)号:US20110089042A1

    公开(公告)日:2011-04-21

    申请号:US12937755

    申请日:2008-04-14

    CPC classification number: H01J47/02

    Abstract: Methods for manufacturing a gas electron multiplier. One method comprises a step of preparing a blank sheet comprised of an insulating sheet with first and second metal layers on its surface, a first metal layer hole forming step in which the first metal layer is patterned by means of photolithography, such as to form holes through the first metal layer, an insulating sheet hole forming step, in which the holes formed in the first metal layer are extended through the insulating layer by etching from the first surface side only, and a second metal layer hole forming step, in which the holes are extended through the second metal layer. Alternatively, the second metal layer hole forming step is performed by electrochemical etching, such that the first metal layer remains unaffected during etching of the second metal layer. In another embodiment, in the second metal layer hole forming step, the first and second metal layers are etched from the outside, thereby reducing the initial thicknesses of the first and second metal layers and the second metal layer is simultaneously etched through the holes in the first metal layer and the insulating sheet, said etching being maintained until the holes extend through the second metal layer, wherein said initial average thickness of the first and second metal layers is between 6.5 μm and 25 μm, preferably between 7.5 μm and 12 μm.

    Abstract translation: 制造气体电子倍增器的方法。 一种方法包括制备由其表面上具有第一和第二金属层的绝缘片组成的空白片的步骤,第一金属层孔形成步骤,其中第一金属层通过光刻法构图,以形成孔 通过第一金属层,绝缘片孔形成步骤,其中形成在第一金属层中的孔仅通过从第一表面侧的蚀刻而延伸穿过绝缘层,以及第二金属层孔形成步骤,其中 孔延伸穿过第二金属层。 或者,第二金属层孔形成步骤通过电化学蚀刻进行,使得第一金属层在蚀刻第二金属层期间保持不受影响。 在另一个实施例中,在第二金属层孔形成步骤中,从外部蚀刻第一金属层和第二金属层,从而减小第一和第二金属层的初始厚度,并且通过第二金属层中的孔同时蚀刻第二金属层 第一金属层和绝缘片,所述蚀刻保持直到孔延伸穿过第二金属层,其中第一和第二金属层的初始平均厚度在6.5μm和25μm之间,优选在7.5μm和12μm之间。

    Photomultiplier tube with focusing electrode plate
    40.
    发明授权
    Photomultiplier tube with focusing electrode plate 失效
    光电倍增管与聚焦电极板

    公开(公告)号:US5936348A

    公开(公告)日:1999-08-10

    申请号:US955462

    申请日:1997-10-21

    CPC classification number: H01J43/22 H01J43/06

    Abstract: In the electron multiplier assembly 27, a dynode unit 10 is constructed from a plurality of dynodes 9 laminated one on another. Each dynode 9 is formed with multichannels 12 which are separated from one another by channel-separating portions 14. A focusing electrode plate 16 is formed with multichannels 18 which are separated from one another by channel-separating electrodes 20 which are located in correspondence with the channel-separating portions 14 of the first stage dynode 9a. A plurality of anodes 7 are provided for receiving electrons multiplied at the dynode unit 10 in their corresponding channels 18. Each channel-separating electrode 20 is formed with an opening 21, at a position confronting the channel-separating portion 14 of the first stage dynode 9a, for transmitting electrons therethrough.

    Abstract translation: 在电子倍增器组件27中,倍增电极单元10由多个彼此层叠的倍增电极9构成。 每个倍增电极9形成有多通道12,其通过沟道分离部分14彼此分离。聚焦电极板16形成有多通道18,多通道18通过通道分离电极20彼此分开,通道分离电极20与 第一级倍增极9a的通道分离部分14。 多个阳极7用于接收在其相应的通道18中在倍增电极单元10处相乘的电子。每个通道分离电极20形成有开口21,位于与第一级倍增电极的沟道分离部分14相对的位置 9a,用于透过电子。

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