公开(公告)号：US2908840A

公开(公告)日：1959-10-13

申请号：US53188155

申请日：1955-09-01

Applicant: RCA CORP

Inventor： ANDERSON ROBERT H

IPC: H01J43/08

CPC classification number: H01J43/08

公开(公告)号：US2521133A

公开(公告)日：1950-09-05

申请号：US8566849

申请日：1949-04-05

Applicant: SNELL ARTHUR H ,  URI MILLER

Inventor： SNELL ARTHUR H ,  URI MILLER

IPC: H01J43/08

CPC classification number: H01J43/08

公开(公告)号：US2392155A

公开(公告)日：1946-01-01

申请号：US34262540

申请日：1940-06-27

Applicant: RCA CORP

Inventor： ROSS KILGORE GEORGE

IPC: H01J43/08

CPC classification number: H01J43/08 ,  Y10S164/04

公开(公告)号：US2216267A

公开(公告)日：1940-10-01

申请号：US20584238

申请日：1938-05-03

Applicant: FIRM FERNSEH AKTIEN GES

Inventor： WERNER FLECHSIG

IPC: H01J43/08 ,  H01J43/28 ,  H04R1/02 ,  H04R9/02 ,  H04R9/04

CPC classification number: H04R1/025 ,  H01J43/08 ,  H01J43/28 ,  H04R9/02 ,  H04R9/04

公开(公告)号：US2138928A

公开(公告)日：1938-12-06

申请号：US10475436

申请日：1936-10-09

Applicant: EMI LTD

Inventor： OTTO KLEMPERER

IPC: H01J43/08

CPC classification number: H01J43/08

公开(公告)号：US12183562B2

公开(公告)日：2024-12-31

申请号：US17222590

申请日：2021-04-05

Applicant: ELBIT SYSTEMS OF AMERICA, LLC

Inventor： Arlynn Walter Smith

IPC: H04N23/11 ,  H01J40/06 ,  H01J43/08 ,  H01J43/24 ,  H04N5/33 ,  H04N25/531

Abstract: A night vision system along with an image intensifier tube and method for shuttering the continued draw of electrons from an electron multiplier are provided. The night vision system includes the electron multiplier, or possibly two electron multipliers, each comprising a silicon membrane. A shutter voltage is applied between a first surface and a substantially parallel, opposed second surface of the silicon membrane to discontinue draw of electrons through the electron multiplier and for substantially discontinuing display of an image from the image intensifier tube under certain bright light conditions. Utilizing a global shutter control on the electron multiplier, and the significantly lower voltage for such control mitigates power consumption within the image intensifier, as well as electromagnetic interference and delay response time. A relatively low voltage negative bias shutter voltage on only the electron multiplier selectively provides global shutter to the image intensifier device.

公开(公告)号：US20230296816A1

公开(公告)日：2023-09-21

申请号：US18009067

申请日：2021-04-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Rina KONNO ,  Shunsuke KOBAYASHI ,  Ginji SUGIURA ,  Junichi KONDO ,  Yasumasa MATSUOKA

IPC: G02B5/04 ,  H01J40/16 ,  H01J43/08 ,  G02B21/00 ,  G01N21/64

CPC classification number: G02B5/04 ,  G01N21/64 ,  G02B21/0076 ,  H01J40/16 ,  H01J43/08

Abstract: The electron tube includes a vacuum container having a light transmitting substrate, a photocathode provided on an inner surface of the light transmitting substrate, an anode provided in the vacuum container, and a prism. The prism includes a bottom surface bonded to an outer surface of the light transmitting substrate, a light incident surface, and a light reflecting surface configured to further reflect light, which is incident to the photocathode through the prism and the light transmitting substrate and reflected at an interface between the photocathode and the vacuum space, so that the light is re-enter the photocathode. The light reflecting surface has an outwardly convex curved surface shape. The light incident surface is located inward of an imaginary spherical surface that is along the light reflecting surface.

公开(公告)号：US11728119B2

公开(公告)日：2023-08-15

申请号：US17923949

申请日：2021-04-15

Applicant: NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY ,  HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi Nakamura ,  Yusuke Noda

IPC: H01J43/08 ,  H01J1/34 ,  H01J9/12

CPC classification number: H01J1/34 ,  H01J9/12 ,  H01J43/08

Abstract: A photocathode 4 includes an optically transparent conductive layer provided between a translucent substrate and a photoelectric conversion layer. The optically transparent conductive layer is formed of a constituent material including carbon. A Raman spectrum of the constituent material has a peak of a band, a peak of a band, a peak of a band, and a peak of a band.

公开(公告)号：US09824844B2

公开(公告)日：2017-11-21

申请号：US15029336

申请日：2014-08-08

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takaaki Nagata ,  Yasumasa Hamana ,  Kimitsugu Nakamura

IPC: H01J1/34 ,  H01J1/32 ,  H01J40/06 ,  H01J43/08 ,  H01J43/10

CPC classification number: H01J1/34 ,  H01J1/32 ,  H01J40/06 ,  H01J43/08 ,  H01J43/10

Abstract: A transmission mode photocathode comprises: an optically transparent substrate having an outside face to which light is incident, and an inside face from which the light incident to the outside face side is output; a photoelectric conversion layer disposed on the inside face side of the optically transparent substrate and configured to convert the light output from the inside face into a photoelectron or photoelectrons; and an optically-transparent electroconductive layer comprising graphene, and disposed between the optically transparent substrate and the photoelectric conversion layer.

公开(公告)号：US09620341B2

公开(公告)日：2017-04-11

申请号：US15189871

申请日：2016-06-22

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  David L. Brown ,  John Fielden

IPC: H01J40/06 ,  H01J43/08 ,  H01L31/0216 ,  H01L31/103

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A system for inspecting a sample including a detector, either a photomultiplier tube or an electron-bombarded image sensor, that is positioned to receive light from the sample. The detector includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. The semiconductor photocathode includes silicon, and further includes a pure boron coating on at least one surface.