DISPLAY DEVICE
    31.
    发明申请

    公开(公告)号:US20210200366A1

    公开(公告)日:2021-07-01

    申请号:US17138090

    申请日:2020-12-30

    摘要: A display device includes a thin-film transistor layer disposed on a substrate and including thin-film transistors; and an emission material layer disposed on the thin-film transistor layer. The emission material layer includes light-emitting elements each including a first light-emitting electrode, an emissive layer and a second light-emitting electrode, light-receiving elements each including a first light-receiving electrode, a light-receiving semiconductor layer and a second light-receiving electrode, and a first bank disposed on the first light-emitting electrode and defining an emission area of each of the light-emitting elements. The light-receiving elements are disposed on the first bank.

    Chip package and manufacturing method thereof

    公开(公告)号:US11038077B2

    公开(公告)日:2021-06-15

    申请号:US16291637

    申请日:2019-03-04

    申请人: XINTEC INC.

    摘要: A chip package includes a chip, a sidewall structure that has a first light-shielding layer, a second light-shielding layer, and a cover. The chip has a light emitter and a light receiver that are located on a top surface of the chip. The sidewall structure is located on the top surface of the chip and has two aperture areas. The light emitter and the light receiver are respectively located in the two aperture areas. The sidewall structure surrounds the light emitter and the light receiver, and at least one surface of the sidewall structure has the first light-shielding layer. The second light-shielding layer is located between the chip and the sidewall structure. The cover is located on a surface of the sidewall structure facing away from the chip, and at least covers the light receiver and the sidewall structure that surrounds the light receiver.

    Mobile information processing device, integrated circuit, and battery pack

    公开(公告)号:US11023026B2

    公开(公告)日:2021-06-01

    申请号:US16196508

    申请日:2018-11-20

    发明人: Kinya Matsuda

    摘要: An integrated circuit includes: a first current detection circuit configured to, when a first enable signal is in an activated state, detect a current flowing between a first node and a second node, and generate an output signal, and when the first enable signal is in a deactivated state, stop a current detection operation; a first voltage detection circuit, which operates intermittently or operates continuously, that is configured to detect a voltage at the first node, and generate an output signal; and a control circuit that is configured to generate the first enable signal and supply the first enable signal to the first current detection circuit, and is configured to fetch the output signal of the first voltage detection circuit in a period other than the period in which the first enable signal transitions from a deactivated state to an activated state.

    Optoelectronic semiconductor structure having a bipolar phototransistor structure and manufacturing method thereof

    公开(公告)号:US11011666B2

    公开(公告)日:2021-05-18

    申请号:US16541156

    申请日:2019-08-15

    摘要: An optoelectronic semiconductor structure includes a first n-type semiconductor layer, a first quantum well layer, a first p-type semiconductor layer, and a second n-type semiconductor layer. The first quantum well layer is disposed on the first n-type semiconductor layer. The first p-type semiconductor layer is disposed on the first quantum well layer. The second n-type semiconductor layer is disposed on the first p-type semiconductor layer. The second n-type semiconductor layer includes both an n-type dopant and a p-type dopant. The concentration of the n-type dopant in the second n-type semiconductor layer is greater than the concentration of the p-type dopant in the second n-type semiconductor layer. The first n-type semiconductor layer, the first quantum well layer, the first p-type semiconductor layer, and the second n-type semiconductor layer form a bipolar phototransistor structure. A manufacturing method of the optoelectronic semiconductor structure is also provided.

    LIGHT RECEPTION/EMISSION ELEMENT MODULE AND SENSOR DEVICE

    公开(公告)号:US20210126151A1

    公开(公告)日:2021-04-29

    申请号:US16605461

    申请日:2018-04-25

    发明人: Naoki FUJIMOTO

    IPC分类号: H01L31/12 H01L31/0216

    摘要: A light reception/emission element module comprises a substrate, a light emitting element disposed on the substrate, a first light receiving device disposed on the substrate apart from the light emitting element, and an upper wall located above the substrate. The upper wall comprises a facing surface facing the light emitting element and the first light receiving element. The light reception/emission element module of the disclosure further comprises a second light emitting element disposed on the substrate. The upper wall further comprises a first light passing portion located above the light emitting element, a second light passing portion located above the second light receiving element, and an intermediate portion located in a region between the first light passing portion and the second light passing portion. At least part of a lower surface of the intermediate portion comprises the facing surface.

    Integrated photovoltaic window and light source

    公开(公告)号:US10992252B2

    公开(公告)日:2021-04-27

    申请号:US16221736

    申请日:2018-12-17

    摘要: Implementations of the disclosed subject matter provide a window, an energy and light producing device including at least one transparent photovoltaic device and at least one non-transparent Organic Light Emitting Device (OLED) in an optical path of the window. A controller may control the operation of the non-transparent OLED of the energy and light producing device. An energy storage device may be electrically coupled to the controller and the energy and light producing device to store energy generated by the transparent photovoltaic device and to power the non-transparent OLED. In some implementations, a LED or OLED may be mounted in the frame of the window and may be powered by the energy storage device.