公开(公告)号：US10700194B2

公开(公告)日：2020-06-30

申请号：US16026663

申请日：2018-07-03

Applicant: STMicroelectronics, Inc.

Inventor： Qing Liu ,  John H. Zhang

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/165 ,  H01L29/267 ,  H01L29/739 ,  H01L27/092 ,  H01L29/16 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/51 ,  H01L21/8238

Abstract: A tunneling transistor is implemented in silicon, using a FinFET device architecture. The tunneling FinFET has a non-planar, vertical, structure that extends out from the surface of a doped drain formed in a silicon substrate. The vertical structure includes a lightly doped fin defined by a subtractive etch process, and a heavily-doped source formed on top of the fin by epitaxial growth. The drain and channel have similar polarity, which is opposite that of the source. A gate abuts the channel region, capacitively controlling current flow through the channel from opposite sides. Source, drain, and gate terminals are all electrically accessible via front side contacts formed after completion of the device. Fabrication of the tunneling FinFET is compatible with conventional CMOS manufacturing processes, including replacement metal gate and self-aligned contact processes. Low-power operation allows the tunneling FinFET to provide a high current density compared with conventional planar devices.

公开(公告)号：US10672689B2

公开(公告)日：2020-06-02

申请号：US16460704

申请日：2019-07-02

Applicant: STMICROELECTRONICS, INC.

Inventor： Frederick Ray Gomez ,  Tito Mangaoang, Jr. ,  Jefferson Talledo

IPC: H01L23/495 ,  H01L21/56 ,  H01L21/48 ,  H01L23/60 ,  H01L23/31 ,  H01L23/00 ,  H01L21/66

Abstract: According to principles of the disclosure as explained herein, selected leads are electrically connected through metal strips to the lead frame until the end of the manufacturing process. The lead frame is grounded through the manufacturing process to prevent any ESD event from causing damage to the protected leads. In the final singulation step, the leads are electrically isolated from each other and from the lead frame, thus maintaining protection from a potential ESD event up until the final package singulation step.

公开(公告)号：US20200098760A1

公开(公告)日：2020-03-26

申请号：US16697103

申请日：2019-11-26

Applicant: STMICROELECTRONICS, INC.

Inventor： Pierre MORIN ,  Nicolas LOUBET

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/16 ,  H01L29/66 ,  H01L29/10 ,  H01L29/165

Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures may be constrained in a strained-relieved state. Fin structures may be epitaxially grown in a second layer over the base structures. The constrained base structures can cause higher amounts of strain to form in the epitaxially-grown fins than would occur for non-constrained base structures.

公开(公告)号：US10593780B2

公开(公告)日：2020-03-17

申请号：US15222261

申请日：2016-07-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES INC. ,  STMicroelectronics, Inc.

Inventor： Xiuyu Cai ,  Chun-Chen Yeh ,  Qing Liu ,  Ruilong Xie

IPC: H01L21/768 ,  H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165

Abstract: A semiconductor device that a fin structure, and a gate structure present on a channel region of the fin structure. A composite spacer is present on a sidewall of the gate structure including an upper portion having a first dielectric constant, a lower portion having a second dielectric constant that is less than the first dielectric constant, and an etch barrier layer between sidewalls of the first and second portion of the composite spacer and the gate structure. The etch barrier layer may include an alloy including at least one of silicon, boron and carbon.

公开(公告)号：US20200080843A1

公开(公告)日：2020-03-12

申请号：US16686091

申请日：2019-11-15

Applicant: STMicroelectronics, Inc.

Inventor： Mahesh CHOWDHARY

IPC: G01C19/32 ,  G01C19/5776

Abstract: A sensor chip includes registers storing and outputting configuration data, an extraction circuit receiving digital data and extracting features of the digital data in accordance with the configuration data, and a classification circuit applying a decision tree to the extracted features to generate a context of an electronic device into which the sensor chip is incorporated relative to its surroundings, the decision tree operating according to the configuration data. The classification unit outputs the context to the registers for storage. The configuration data includes which features for the extraction circuit to extract from the digital data, and a structure for the decision tree. The structure for the decision tree includes conditions that the decision tree is to apply to the at least one extracted feature, and outcomes to be effectuated based upon whether the extracted features meet or do not meet the conditions.

公开(公告)号：US10546789B2

公开(公告)日：2020-01-28

申请号：US14986229

申请日：2015-12-31

Applicant: STMicroelectronics, Inc.

Inventor： John H. Zhang ,  Chengyu Niu ,  Heng Yang

IPC: H01L21/70 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/78 ,  H01L21/285 ,  H01L29/417 ,  H01L29/66 ,  H01L27/092

Abstract: Methods and devices for enhancing mobility of charge carriers. An integrated circuit may include semiconductor devices of two types. The first type of device may include a metallic gate and a channel strained in a first manner. The second type of device may include a metallic gate and a channel strained in a second manner. The gates may include, collectively, three or fewer metallic materials. The gates may share a same metallic material. A method of forming the semiconductor devices on an integrated circuit may include depositing first and second metallic layers in first and second regions of the integrated circuit corresponding to the first and second gates, respectively.

公开(公告)号：US10546743B2

公开(公告)日：2020-01-28

申请号：US15874654

申请日：2018-01-18

Applicant: STMicroelectronics, Inc. ,  International Business Machines Corporation

Inventor： John H. Zhang ,  Yann Mignot ,  Lawrence A. Clevenger ,  Carl Radens ,  Richard Stephen Wise ,  Yiheng Xu ,  Yannick Loquet ,  Hsueh-Chung Chen

IPC: H01L21/02 ,  H01L23/522 ,  H01L23/532 ,  H01L21/311 ,  H01L21/768

Abstract: Ultra-low-k dielectric materials used as inter-layer dielectrics in high-performance integrated circuits are prone to be structurally unstable. The Young's modulus of such materials is decreased, resulting in porosity, poor film strength, cracking, and voids. An alternative dual damascene interconnect process incorporates air gaps into a high modulus dielectric material to maintain structural stability while reducing capacitance between adjacent nanowires. Incorporation of an air gap having k=1.0 compensates for the use of a higher modulus film having a dielectric constant greater than the typical ultra-low-k (ULK) dielectric value of about 2.2. The higher modulus film containing the air gap is used as an insulator between adjacent metal lines, while a ULK film is retained to insulate vias. The dielectric layer between two adjacent metal lines thus forms a ULK/high-modulus dielectric bi-layer.

公开(公告)号：US10543504B2

公开(公告)日：2020-01-28

申请号：US15636491

申请日：2017-06-28

Applicant: STMicroelectronics, Inc. ,  STMICROELECTRONICS S.R.L. ,  STMicroelectronics International N.V.

Inventor： Simon Dodd ,  Joe Scheffelin ,  Dave Hunt ,  Matt Giere ,  Dana Gruenbacher ,  Faiz Sherman

IPC: B05B17/06 ,  H05K1/02 ,  H05K1/11 ,  H05K1/18 ,  B41J2/14 ,  B05B17/00 ,  B41J2/175 ,  B41J2/16

Abstract: A microfluidic die is disclosed that includes a plurality of heaters above a substrate, a plurality of chambers and nozzles above the heaters, a plurality of first contacts coupled to the heaters, and a plurality of second contacts coupled to the heaters. The plurality of second contacts are coupled to each other and coupled to ground. The die includes a plurality of contact pads, a first signal line coupled to the plurality of second contacts and to a first one of the plurality of contact pads, and a plurality of second signal lines, each second signal line being coupled to one of the plurality of first contacts, groups of the second signal lines being coupled together to drive a group of the plurality of heaters with a single signal, each group of the second signal lines being coupled to a remaining one of the plurality of contact pads.

公开(公告)号：US20200025567A1

公开(公告)日：2020-01-23

申请号：US16243876

申请日：2019-01-09

Applicant: STMICROELECTRONICS S.R.L. ,  STMICROELECTRONICS, INC. ,  STMICROELECTRONICS INTERNATIONAL N.V.

Inventor： Carlo Valzasina ,  Huantong Zhang ,  Matteo Fabio Brunetto ,  Gert Ingvar Andersson ,  Erik Daniel Svensson ,  Nils Einar Hedenstierna

IPC: G01C19/5776 ,  G01C19/5719 ,  G01C19/574

Abstract: A gyroscope includes a substrate, a first structure, a second structure and a third structure elastically coupled to the substrate and movable along a first axis. The first and second structure are arranged at opposite sides of the third structure with respect to the first axis A driving system is configured to oscillate the first and second structure along the first axis in phase with one another and in phase opposition with the third structure. The first, second and third structure are provided with respective sets of sensing electrodes, configured to be displaced along a second axis perpendicular to the first axis in response to rotations of the substrate about a third axis perpendicular to the first axis and to the second axis.

公开(公告)号：US10531132B2

公开(公告)日：2020-01-07

申请号：US15856509

申请日：2017-12-28

Applicant: STMicroelectronics International N.V. ,  STMicroelectronics, Inc.

Inventor： Udit Kumar ,  Bharat Jauhari ,  Chandandeep Singh Pabla

IPC: H04N21/438 ,  H04N21/234 ,  H04N21/44 ,  H04N5/44 ,  H04N21/433 ,  H04N21/434 ,  H04N21/482

Abstract: A channel stream is received and demultiplexed into a video packetized elementary stream (PES), audio packetized elementary stream (PES), and program clock reference (PCR). Indexing circuitry stores the video PES and the audio PES in a buffer, locates a presentation time stamp (PTS) in the video PES and stores that PTS in the buffer, locates a start of each group of pictures (GOP) in the video PES and stores those locations in the buffer, and locates a PTS in the audio PES and stores that PTS in the buffer. Control circuitry empties the buffer of an oldest GOP in the video PES if the PCR is greater than the PTS of a second oldest GOP stored in the buffer, and empties the buffer of each PES packet of the audio PES that has a PTS that is less than the PTS of the oldest GOP stored.