公开(公告)号：US20210114867A1

公开(公告)日：2021-04-22

申请号：US17072813

申请日：2020-10-16

Applicant: STMicroelectronics S.r.l.

Inventor： Enri DUQI ,  Fabrizio CERINI ,  Lorenzo BALDO

IPC: B81B7/02 ,  A24F40/51 ,  B81B7/00

Abstract: A MEMS switch is actuatable by a fluid, and includes a piezoelectric pressure sensor that detects the movement of a fluid generating a negative pressure. The piezoelectric pressure sensor is formed by a chip of semiconductor material having a through cavity and a sensitive membrane, which extends over the through cavity and has a first and a second surface. The piezoelectric pressure sensor is mounted on a face of a board having a through hole so that the through cavity overlies and is in fluid connection with the through hole. The board has a fixing structure, which enables securing in an opening of a partition wall separating a first and a second space from each other. The board is arranged so that the first surface of the sensitive membrane faces the first space, and the second surface of the sensitive membrane faces the second space.

公开(公告)号：US10985269B2

公开(公告)日：2021-04-20

申请号：US16376468

申请日：2019-04-05

Applicant: STMicroelectronics S.r.l.

Inventor： Alessandro Paolo Bramanti ,  Alberto Pagani

IPC: H01L29/778 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H03K17/687 ,  H01L29/205 ,  H01L29/20 ,  H01L21/02 ,  H01L27/06

Abstract: Embodiments are directed to two-dimensional electron gas (2DEG)-confined 2DEG devices and methods. One such device includes a substrate and a heterostructure on the substrate. The heterostructure includes a first semiconductor layer, a second semiconductor layer, and a 2DEG layer between the first and second semiconductor layers. The device further includes a 2DEG device having a conduction channel in the 2DEG layer. An isolation electrode overlies the heterostructure and at least partially surrounds a periphery of the 2DEG device. The isolation electrode, in use, interrupts the 2DEG layer in response to an applied voltage.

公开(公告)号：US20210104445A1

公开(公告)日：2021-04-08

申请号：US17039289

申请日：2020-09-30

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA' ,  Claudio CHIBBARO ,  Alfio GUARNERA ,  Mario Giuseppe SAGGIO ,  Francesco LIZIO

IPC: H01L23/31 ,  H01L29/16 ,  H01L21/04 ,  H01L21/56

Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.

公开(公告)号：US10964646B2

公开(公告)日：2021-03-30

申请号：US15854456

申请日：2017-12-26

Applicant: STMicroelectronics S.r.l.

Inventor： Alberto Pagani ,  Giovanni Girlando ,  Federico Giovanni Ziglioli ,  Alessandro Finocchiaro

IPC: H01L23/00 ,  G01R31/28 ,  H01L21/762 ,  H01L23/58 ,  H01L21/66 ,  H02J50/20

Abstract: A method of making an integrated circuit (IC) includes forming circuitry over a top surface of a semiconductor substrate having the top surface and an opposite bottom surface. An antenna is formed in an interconnect layer formed above the semiconductor substrate, where the antenna is coupled to circuitry. A seal ring is formed around a periphery of the interconnect layer. The seal ring is disposed around the antenna and the circuitry. A trench with a solid-state insulating material is formed. The trench extends vertically into the semiconductor substrate and extends laterally across the IC.

公开(公告)号：US10964627B2

公开(公告)日：2021-03-30

申请号：US16696698

申请日：2019-11-26

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Concetto Privitera ,  Maurizio Maria Ferrara ,  Fabio Vito Coppone

IPC: H01L21/44 ,  H01L21/48 ,  H01L23/495 ,  H01L23/34 ,  H01L23/00

Abstract: Packaged semiconductor device having a frame, of conductive material; a body of semiconductor material, fixed to the frame through a first adhesive layer; a heatsink element, fixed to the body through a second adhesive layer; and a packaging mass surrounding the body and, at least partially, the frame and the heatsink element. The heatsink element is formed by a heatsink die facing, and coplanar to, a main face of the device and by a spacer structure, which includes a pair of pedestals projecting from the perimeter of the heatsink die towards the body and rest on the body.

公开(公告)号：US10962431B2

公开(公告)日：2021-03-30

申请号：US16220498

申请日：2018-12-14

Applicant: STMicroelectronics S.R.L.

Inventor： Enri Duqi ,  Sebastiano Conti ,  Sonia Costantini

IPC: G01L9/00 ,  G01L9/06 ,  B81B7/00 ,  B81C1/00

Abstract: A pressure sensor designed to detect a value of ambient pressure of the environment external to the pressure sensor includes: a first substrate having a buried cavity and a membrane suspended over the buried cavity; a second substrate having a recess, hermetically coupled to the first substrate so that the recess defines a sealed cavity the internal pressure value of which provides a pressure-reference value; and a channel formed at least in part in the first substrate and configured to arrange the buried cavity in communication with the environment external to the pressure sensor. The membrane undergoes deflection as a function of a difference of pressure between the pressure-reference value in the sealed cavity and the ambient-pressure value in the buried cavity.

公开(公告)号：US10954121B2

公开(公告)日：2021-03-23

申请号：US16708271

申请日：2019-12-09

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Giorgio Allegato ,  Laura Oggioni ,  Matteo Garavaglia ,  Roberto Somaschini

IPC: B81C1/00 ,  B81C3/00 ,  B81B3/00

Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.

公开(公告)号：US20210083637A1

公开(公告)日：2021-03-18

申请号：US16984445

申请日：2020-08-04

Applicant: STMicroelectronics S.r.l.

Inventor： Stefano Valle ,  Flavio Polloni

IPC: H03G3/30 ,  H04R29/00 ,  H04R3/00 ,  H03F3/183

Abstract: A method of monitoring electrical loads is disclosed. In an embodiment the method includes generating a first voltage signal and a second voltage signal, the second voltage signal in quadrature to the first voltage signal, injecting one of the first voltage signal or the second voltage signal into a signal propagation path towards an electrical load, sensing a current signal flowing through the electrical load as a result of the one of the first voltage signal or the second voltage signal injected into the signal propagation path and processing the first voltage signal, the second voltage signal and the sensed current signal.

公开(公告)号：US20210081773A1

公开(公告)日：2021-03-18

申请号：US17023144

申请日：2020-09-16

Applicant: STMICROELECTRONICS S.r.l. ,  STMicroelectronics International N.V.

Inventor： Nitin CHAWLA ,  Giuseppe DESOLI ,  Manuj AYODHYAWASI ,  Thomas BOESCH ,  Surinder Pal SINGH

IPC: G06N3/063 ,  G06F1/08 ,  G06F1/324 ,  G06F9/50 ,  G06N3/08 ,  G06F1/3228 ,  G06F1/3296

Abstract: Systems and devices are provided to increase computational and/or power efficiency for one or more neural networks via a computationally driven closed-loop dynamic clock control. A clock frequency control word is generated based on information indicative of a current frame execution rate of a processing task of the neural network and a reference clock signal. A clock generator generates the clock signal of neural network based on the clock frequency control word. A reference frequency may be used to generate the clock frequency control word, and the reference frequency may be based on information indicative of a sparsity of data of a training frame.

公开(公告)号：US20210072386A1

公开(公告)日：2021-03-11

申请号：US17011867

申请日：2020-09-03

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Delfo Nunziato SANFILIPPO

IPC: G01S17/36 ,  G01J1/42 ,  G01S7/481

Abstract: An optical proximity sensor comprises a solid-state photo-electric converter, a biasing circuit for biasing the solid-state photo-electric converter, and a drive circuit. The drive circuit is configured to control the biasing circuit to apply to the photo-electric converter a bias signal modulated between a first value and a second value, the second value different from the first value, wherein a modulated optical signal is emitted by the solid-state photo-electric converter towards a target object. The drive circuit is configured to receive an electrical output signal from the solid-state photo-electric converter, the electrical output signal being a function of a modulated optical signal received at the solid-state photo-electric converter as a result of reflection of the emitted modulated optical signal at the target object. The drive circuit is configured to perform a phase comparison of the modulated bias signal against the electrical output signal and produce, as a result of the phase comparison, a phase shift signal. The drive circuit is configured to compute a distance between the optical proximity sensor and the target object as a function of the phase shift signal.