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    Compact Non-Volatile Memory Device
    481.
    发明申请
    Compact Non-Volatile Memory Device 审中-公开

    公开(公告)号：US20190341114A1

    公开(公告)日：2019-11-07

    申请号：US16511703

    申请日：2019-07-15

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： François Tailliet ,  Marc Battista

    IPC: G11C16/14 ,  G11C16/04 ,  G11C8/14 ,  G11C8/12 ,  G11C16/08 ,  G11C8/08 ,  G11C5/02 ,  G11C8/10

    Abstract: A non-volatile memory device includes a substrate, a plurality of memory words, a control block, a first electrically-conducting link, and a plurality of second electrically-conducting links. The substrate includes a substantially planar surface. The memory words include B memory words disposed at the substantially planar surface. The control block includes B control elements disposed at the substantially planar surface. The first electrically-conducting link is disposed in a first plane parallel to the substantially planar surface. The first electrically-conducting link connects one of the B control elements to a memory word of the memory words. The plurality of second electrically-conducting links includes B-1 second electrically-conducting links respectively connecting B-1 remaining control elements to B-1 corresponding memory words of the plurality of memory words. The B-1 second electrically-conducting links are disposed above the first plane and physically extend at least partially over at least two memory words of the memory words.

    Frequency adjustment of an NFC circuit
    482.
    发明授权
    Frequency adjustment of an NFC circuit 有权

    公开(公告)号：US10454530B2

    公开(公告)日：2019-10-22

    申请号：US16102068

    申请日：2018-08-13

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Alexandre Tramoni

    IPC: H04W4/80 ,  H04B5/00 ,  H03H7/38

    Abstract: A near-field communication circuit includes an oscillating circuit having a controllable capacitor. A control circuit is coupled to the oscillating circuit to control the controllable capacitor. A battery is coupled to the control circuit to enable control when the near-field communication circuit is in a standby mode. The near-field communication circuit can be utilized by a mobile communication device.

    INTEGRATED CIRCUIT INCLUDING TRANSISTORS HAVING A COMMON BASE
    484.
    发明申请
    INTEGRATED CIRCUIT INCLUDING TRANSISTORS HAVING A COMMON BASE 审中-公开

    公开(公告)号：US20190312087A1

    公开(公告)日：2019-10-10

    申请号：US16375557

    申请日：2019-04-04

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Philippe BOIVIN

    IPC: H01L27/24 ,  H01L45/00 ,  H01L27/082 ,  H01L29/10 ,  H01L21/8222

    Abstract: The disclosure relates to integrated circuits including one or more rows of transistors and methods of forming rows of transistors. In an embodiment, an integrated circuit includes a row of bipolar transistors including a first semiconductor layer having a plurality of first conduction regions, a second semiconductor layer having a second conduction region, a common base between the first semiconductor layer and the second semiconductor layer, and a plurality of insulator walls extending in a first direction. The first conduction regions are separated from one another by the insulator walls. The integrated circuit further includes an insulating trench extending in a second direction and in contact with each of the bipolar transistors of the row of bipolar transistors. A conductive layer is coupled to the base, and the conductive layer extends through the insulator walls and extends at least partially into the insulating trench.

    INTEGRATED CIRCUIT PROVIDED WITH DECOYS AGAINST REVERSE ENGINEERING AND CORRESPONDING FABRICATION PROCESS
    487.
    发明申请
    INTEGRATED CIRCUIT PROVIDED WITH DECOYS AGAINST REVERSE ENGINEERING AND CORRESPONDING FABRICATION PROCESS 审中-公开

    公开(公告)号：US20190279947A1

    公开(公告)日：2019-09-12

    申请号：US16292958

    申请日：2019-03-05

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Abderrezak MARZAKI ,  Mathieu LISART

    IPC: H01L23/00 ,  H01L27/02 ,  H04N19/44 ,  G06F21/87

    Abstract: An integrated circuit includes a first domain supplied with power at a first supply voltage. A first transistor comprising in the first domain includes a first gate region and a first gate dielectric region. A second domain is supply with power at a second supply voltage and includes a second transistor having a second gate region and a second gate dielectric region, the second gate region being biased at a voltage that is higher than the first supply voltage. The first and second gate dielectric regions have the same composition, wherein that composition configures the first transistor in a permanently turned off condition in response to a gate bias voltage lower than or equal to the first supply voltage. The second transistor is a floating gate memory cell transistor, with the second gate dielectric region located between the floating and control gates.

    Near-Field Communication Circuit, Interface, and System
    488.
    发明申请
    Near-Field Communication Circuit, Interface, and System 审中-公开

    公开(公告)号：US20190268040A1

    公开(公告)日：2019-08-29

    申请号：US16277678

    申请日：2019-02-15

    Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics (Rousset) SAS

    Inventor： Gwenael Maillet ,  Jean-Louis Labyre ,  Gilles Bas

    IPC: H04B5/00 ,  H03K7/08

    Abstract: A circuit includes a near-field communication circuit configured to receive a radio frequency control signal transmitted in a near-field regime, a pulse width modulation signal generation circuit coupled to the near-field communication circuit circuit and configured to generate a pulse width modulation signal according to the radio frequency control signal, and a non-volatile memory coupled to both the near-field communication circuit circuit and the pulse width modulation signal generation circuit, the non-volatile memory comprising digital words for configuring the pulse width modulation signal.

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