公开(公告)号：US12158706B2

公开(公告)日：2024-12-03

申请号：US17624901

申请日：2020-06-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Marcus Adrianus Van de Kerkhof ,  Manish Ranjan

IPC: G03F7/00

Abstract: A lithographic apparatus including a substrate stage for supporting a structure in a compartment, the compartment having a compartment surface facing a top surface of the substrate in at least one operational configuration; and a soft coating on the compartment surface for capturing particles. A heat shield or component thereof for a lithographic apparatus, the heat shield or component thereof including a soft coating on at least one surface for capturing particles and a lithographic apparatus including such a heat shield.

公开(公告)号：US12158704B2

公开(公告)日：2024-12-03

申请号：US17533947

申请日：2021-11-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham Alexander Soethoudt ,  Thomas Poiesz

IPC: G03F7/00 ,  H01L21/683

Abstract: A method including: generating a first force to attract a substrate holder to a support surface, the holder including a body having opposing first and second body surfaces, first burls at the first body surface, wherein each first burl has a distal end to support a substrate, and second burls at the second body surface to support the substrate holder on the support surface through contact with distal ends of the second burls; generating a second force to attract the substrate to the substrate holder; and controlling the first force and/or second force in a release step to deform the body between the second burls such as to create a gap between the distal ends of a first subset of the plurality of first burls and the substrate and such that the substrate is supported on distal ends of a second subset of the plurality of first burls.

公开(公告)号：US12158435B2

公开(公告)日：2024-12-03

申请号：US17634588

申请日：2020-07-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Nitesh Pandey ,  Simon Gijsbert Josephus Mathijssen ,  Kaustuve Bhattacharyya ,  Arie Jeffrey Den Boef

IPC: G01J3/36 ,  G01N21/95 ,  G02B27/10 ,  G02B27/14 ,  G03F7/00

Abstract: An illumination and detection apparatus for a metrology tool, and associated method. The apparatus includes an illumination arrangement operable to produce measurement illumination having a plurality of discrete wavelength bands and having a spectrum having no more than a single peak within each wavelength band. The detection arrangement includes a detection beamsplitter to split scattered radiation into a plurality of channels, each channel corresponding to a different one of the wavelength bands; and at least one detector for separate detection of each channel.

公开(公告)号：US20240385541A1

公开(公告)日：2024-11-21

申请号：US18790520

申请日：2024-07-31

Applicant: Carl Zeiss SMT GmbH ,  ASML Netherlands B.V.

Inventor： Wilbert KRUITHOF ,  Parham YAGHOOBI ,  John LEO

IPC: G03F7/00

Abstract: A lithography system for extreme ultraviolet (EUV) radiation includes a housing (25) with an interior (24) containing a residual gas (27), and at least one gas-binding component (29) which is arranged in the interior (24) and has a gas-binding material for binding contaminating substances (28). The gas-binding component (29) has at least one flow duct (33) having at least one surface with the gas-binding material, with a gas flow of the residual gas (27) in the flow duct (33) having a Knudsen number of between 0.01 and 5, preferably between 0.01 and 0.5, in particular between 0.01 and 0.3, and with a casing (26) which encapsulates a beam path of the EUV lithography system (1) being arranged in the interior (24) of the housing (25). The casing (26) preferably has an opening (37) with a maintenance shaft (36) in which the gas-binding component (29) is arranged.

公开(公告)号：US20240385530A1

公开(公告)日：2024-11-21

申请号：US18565494

申请日：2022-05-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Jiao HUANG ,  Jinze Wang ,  Yan YAN ,  Yongfa FAN ,  Liang Liu ,  Mu FENG

IPC: G03F7/00

Abstract: Etch bias is determined based on a curvature of a contour in a substrate pattern. The etch bias is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined and inputted to a simulation model. The simulation model includes a correlation between etch biases and curvatures of contours. The etch bias for the contour in the substrate pattern is outputted by the simulation model based on the curvature.

公开(公告)号：US20240377756A1

公开(公告)日：2024-11-14

申请号：US18749556

申请日：2024-06-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Yichen ZHANG ,  Sarathi ROY

IPC: G03F7/00 ,  G06F17/18 ,  G06F18/24

Abstract: A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.

公开(公告)号：US20240377343A1

公开(公告)日：2024-11-14

申请号：US18684558

申请日：2022-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Yunbo GUO ,  Zhu WANG ,  Feng YANG ,  Qian ZHAO ,  Mu FENG ,  Jen-Shiang WANG

IPC: G01N23/2251 ,  G06N3/045 ,  G06N3/0475 ,  G06N3/094

Abstract: Described herein is a metrology system and a method for converting metrology data via a trained machine learning (ML) model. The method includes accessing a first (MD1) SEM data set (e.g., images, contours, etc.) acquired by a first scanning electron metrology (SEM) system (TS1) and a second (MD2) SEM data set acquired by a second SEM system (TS2), where the first SEM data set and the second SEM data set being associated with a patterned substrate. Using the first SEM data set and the second SEM data set as training data, a machine learning (ML) model is trained (P303) such that the trained ML model is configured to convert (P307) a metrology data set (310) acquired (P305) by the second SEM system to a converted data set (311) having characteristics comparable to metrology data being acquired by the first SEM system. Furthermore, measurements may be determined based on the converted SEM data.

公开(公告)号：US12142451B2

公开(公告)日：2024-11-12

申请号：US17778579

申请日：2020-10-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Tianming Chen ,  Chiyan Kuan ,  Yixiang Wang ,  Zhi Po Wang

IPC: H01J37/02 ,  G03F7/00 ,  H01J37/28

Abstract: A system for grounding a mask using a grounding component are provided. Some embodiments of the system include a grounding component comprising a base and an extension protruding from the base and comprising a conductive prong configured to contact a conductive layer of the mask. Some embodiments of the system include a plurality of conductive prongs configured to contact multiple positions of a conductive layer of the mask. Some other embodiments of the system include an extension comprising various shapes.

公开(公告)号：US20240370621A1

公开(公告)日：2024-11-07

申请号：US18686994

申请日：2022-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Meng LIU ,  Been-Der CHEN ,  Debao SHAO ,  Jen-Yi WUU ,  Hao CHEN ,  Ayman HAMOUDA ,  Jianhua CHENG

IPC: G06F30/392 ,  G06F111/20

Abstract: Selecting an optimized, geometrically diverse subset of clips for a design layout for a semiconductor wafer is described. A complete representation of the design layout is received. A set of representative clips of the design layout is determined such that individual representative clips comprise different combinations of one or more unique patterns of the design layout. A subset of the representative clips is selected based on the one or more unique patterns. The subset of the representative clips is configured to include: (1) each geometrically unique pattern in a minimum number of representative clips; or (2) as many geometrically unique patterns of the design layout as possible in a maximum number of representative clips. The subset of representative clips is provided as training data for training an optical proximity correction or source mask optimization semiconductor process machine learning model, for example.

公开(公告)号：US20240369356A1

公开(公告)日：2024-11-07

申请号：US18776207

申请日：2024-07-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Yan WANG ,  Jian ZHANG ,  Zhiwen KANG ,  Yixiang WANG

IPC: G01B15/08 ,  H01J37/20 ,  H01J37/21 ,  H01J37/22 ,  H01J37/28

Abstract: An inspection apparatus for adjusting a working height for a substrate for multiple target heights is disclosed. The inspection apparatus includes a radiation source configured to provide a radiation beam and a beam splitter configured to split the radiation beam into multiple beamlets that each reflect off a substrate. Each beamlet contains light of multiple wavelengths. The inspection apparatus includes multiple light reflecting components, wherein each light reflecting component is associated with one of the beamlets reflecting off the substrate and is configured to support a different target height for the substrate by detecting a height or a levelness of the substrate based on the beamlet reflecting off the substrate.