Methods for optimizing thin film formation with reactive gases
    43.
    发明授权
    Methods for optimizing thin film formation with reactive gases 失效
    用反应气体优化薄膜形成的方法

    公开(公告)号:US07572740B2

    公开(公告)日:2009-08-11

    申请号:US12060528

    申请日:2008-04-01

    Abstract: A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.

    Abstract translation: 公开了一种用于在腔室中制造IV族半导体薄膜的方法。 该方法包括将衬底定位在腔室中,其中腔室还具有腔室压力。 该方法还包括在衬底上沉积纳米颗粒油墨,所述纳米颗粒油墨包括IV族半导体纳米颗粒和溶剂组,其中该组IV半导体纳米颗粒的每个纳米颗粒包括纳米颗粒表面,其中第IV族半导体纳米颗粒 形成了。 该方法还包括冲击氢等离子体; 以及将所述IV族半导体纳米颗粒层加热至约300℃至约1350℃,约1纳秒至约10分钟之间的制备温度; 其中形成IV族半导体薄膜。

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