n-Type thiophene semiconductors
    47.
    发明申请
    n-Type thiophene semiconductors 审中-公开
    n型噻吩半导体

    公开(公告)号:US20110118483A1

    公开(公告)日:2011-05-19

    申请号:US12927896

    申请日:2010-11-29

    IPC分类号: C07D409/14

    摘要: The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.

    摘要翻译: 新的氟碳官能化和/或杂环改性的聚噻吩,特别是α,ω-二全氟己基硫氧化物DFH-6T可以以高产率和纯度直接制备。 引入噻吩核心的这种修饰提供了增强的热稳定性和挥发性,并且相对于现有技术的未改性组合物提高了电子亲和力。 蒸发膜表现为n型半导体,可用于制造FET迁移率〜0.01cm2 / Vs的薄膜晶体管,这是迄今为止报道的n型有机半导体的最高值。