公开(公告)号：US20090078973A1

公开(公告)日：2009-03-26

申请号：US11859848

申请日：2007-09-24

Applicant: Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

IPC: H01L31/0232 ,  H01L31/062

CPC classification number: H01L27/14625 ,  H01L27/14603 ,  H01L27/1464

Abstract: Provides is a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A plurality of image sensor elements are formed on the front surface of the semiconductor substrate. At least one of the image sensor elements includes a transfer transistor and a photodetector. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. In one embodiment, the gate overlies the photodetector by at least 5%.

Abstract translation: 提供一种背面照明传感器，其包括具有前表面和后表面的半导体衬底。 多个图像传感器元件形成在半导体衬底的前表面上。 图像传感器元件中的至少一个包括传输晶体管和光电检测器。 转移晶体管的栅极包括光反射层。 包括光反射层的传输晶体管的栅极覆盖在光电检测器上。 在一个实施例中，栅极覆盖光电探测器至少5％。

公开(公告)号：US20080290441A1

公开(公告)日：2008-11-27

申请号：US11753480

申请日：2007-05-24

Applicant: Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

IPC: H01L31/00 ,  H01L31/062

CPC classification number: H01L27/14643 ,  H01L27/14625 ,  H01L27/1464

Abstract: A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a gate that includes a reflective layer.

Abstract translation: 背面照明传感器，包括半导体衬底。 半导体衬底具有前表面和后表面。 在半导体衬底的前表面上形成多个像素。 至少一个像素包括光栅结构。 光栅结构具有包括反射层的栅极。

公开(公告)号：US20080142957A1

公开(公告)日：2008-06-19

申请号：US11928041

申请日：2007-10-30

Applicant: Ching-Chun Wang ,  Yen-Yi Wu ,  Sem-Wei Lin

Inventor： Ching-Chun Wang ,  Yen-Yi Wu ,  Sem-Wei Lin

IPC: H01L23/49

CPC classification number: H01L25/03 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/49 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: The present invention relates to a three-dimensional package and method of making the same. The package includes a first substrate, a first chip, a second substrate, a second chip, a spacer, and a first molding compound. The first chip is electrically connected to the first substrate. The second substrate is electrically connected to the first substrate. The second chip is electrically connected to the second substrate. One end of the spacer is attached to the first chip, and the other end of the spacer is attached to the second chip. The first molding compound encapsulates the first substrate, the first chip, the second substrate, the second chip, and the spacer. In the present invention, the adhesion between the spacer and the second chip is enhanced, and the overall thickness of the three-dimensional package is reduced.

Abstract translation: 本发明涉及三维包装及其制造方法。 封装包括第一基板，第一芯片，第二基板，第二芯片，间隔件和第一模塑料。 第一芯片电连接到第一基板。 第二基板电连接到第一基板。 第二芯片电连接到第二基板。 间隔件的一端附接到第一芯片，并且间隔件的另一端附接到第二芯片。 第一模塑料封装第一衬底，第一芯片，第二衬底，第二芯片和间隔件。 在本发明中，间隔物与第二芯片之间的粘附性增强，并且三维封装的整体厚度降低。

公开(公告)号：US20130341746A1

公开(公告)日：2013-12-26

申请号：US13556932

申请日：2012-07-24

Applicant: Shyh-Fann Ting ,  Yen-Ting Chiang ,  Ching-Chun Wang

Inventor： Shyh-Fann Ting ,  Yen-Ting Chiang ,  Ching-Chun Wang

IPC: H01L31/0216 ,  H01L31/18

CPC classification number: H01L27/1464 ,  H01L27/14687

Abstract: A semiconductor device is provided. The semiconductor device includes metallization layers supported by a substrate, a diode and a partially doped silicon layer disposed over the metallization layers, a buffer layer disposed over the diode and the partially doped silicon layer; and an anti-reflective coating disposed over the buffer layer, the anti-reflective coating formed from a porous silicon.

Abstract translation: 提供半导体器件。 半导体器件包括由衬底支撑的金属化层，设置在金属化层上的二极管和部分掺杂的硅层，设置在二极管和部分掺杂硅层上的缓冲层; 以及设置在缓冲层上的抗反射涂层，由多孔硅形成的抗反射涂层。

公开(公告)号：US20130329102A1

公开(公告)日：2013-12-12

申请号：US13492258

申请日：2012-06-08

Applicant: Chun-Han TSAO ,  Chih-Yu LAI ,  Chih-Hui HUANG ,  Cheng-Ta WU ,  Yeur-Luen TU ,  Ching-Chun WANG ,  Shyh-Fann TING ,  Chia-Shiung TSAI

Inventor： Chun-Han TSAO ,  Chih-Yu LAI ,  Chih-Hui HUANG ,  Cheng-Ta WU ,  Yeur-Luen TU ,  Ching-Chun WANG ,  Shyh-Fann TING ,  Chia-Shiung TSAI

IPC: H04N5/335

CPC classification number: H01L31/02164 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/148 ,  H01L51/4273

Abstract: An image sensor device including a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon oxide, and is negatively charged. The second compressively-stressed layer contains silicon nitride, and is negatively charged. A metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a third compressively-stressed layer formed on the metal shield and the second compressively-stressed layer. The third compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the third compressively-stressed layer.

Abstract translation: 一种包括具有阵列区域和黑色电平校正区域的半导体衬底的图像传感器装置。 阵列区域包含多个辐射敏感像素。 黑色电平校正区域包含一个或多个参考像素。 基板具有前侧和后侧。 图像传感器装置包括形成在基板的背面上的第一压缩应力层。 第一压应力层含有氧化硅，带负电荷。 第二压应力层含有氮化硅，带负电荷。 在黑色电平校正区域的至少一部分上形成金属屏蔽。 图像传感器装置包括形成在金属屏蔽和第二压缩应力层上的第三压缩应力层。 第三压缩应力层含有氧化硅。 金属屏蔽层的侧壁由第三压应力层保护。

公开(公告)号：US08405177B2

公开(公告)日：2013-03-26

申请号：US13238420

申请日：2011-09-21

Applicant: Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

IPC: H01L21/00

CPC classification number: H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

Abstract: Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

Abstract translation: 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。

公开(公告)号：US20120034730A1

公开(公告)日：2012-02-09

申请号：US13275935

申请日：2011-10-18

Applicant: Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Ching-Chun Wang ,  Ren-Jie Lin ,  Shou-Gwo Wuu

Inventor： Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Ching-Chun Wang ,  Ren-Jie Lin ,  Shou-Gwo Wuu

IPC: H01L31/0232

CPC classification number: H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643

Abstract: The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each of the plurality of sensor elements configured to receive light directed towards the backside surface. The method further includes forming a dielectric layer on the backside surface of the substrate, wherein the dielectric layer is formed to have a compressive stress to induce a tensile stress in the substrate. A backside illuminated semiconductor device fabricated by such a method is also disclosed.

Abstract translation: 本公开提供了用于减少背面照明半导体器件中的暗电流的方法和装置。 在一个实施例中，制造半导体器件的方法包括提供具有前表面和背面的衬底，以及在衬底中形成多个传感器元件，所述多个传感器元件中的每一个被配置为接收朝向背面的光 表面。 该方法还包括在衬底的背面形成电介质层，其中介电层形成为具有压应力以在衬底中引起拉伸应力。 还公开了通过这种方法制造的背面照明半导体器件。

公开(公告)号：US20120007204A1

公开(公告)日：2012-01-12

申请号：US13238420

申请日：2011-09-21

Applicant: Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

IPC: H01L27/146 ,  H01L31/0352

CPC classification number: H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

Abstract: Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

Abstract translation: 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。

公开(公告)号：US20110294250A1

公开(公告)日：2011-12-01

申请号：US13206228

申请日：2011-08-09

Applicant: Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

Inventor： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

IPC: H01L31/18

CPC classification number: H01L27/14625 ,  H01L27/14603 ,  H01L27/1464

Abstract: Provided is a method of forming and/or using a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A transfer transistor and a photodetector are formed on the front surface. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. Radiation incident the back surface and tratversing the photodetector may be reflected by the optically reflective layer. The reflected radiation may be sensed by the photodetector.

Abstract translation: 提供一种形成和/或使用背面照明传感器的方法，该传感器包括具有前表面和后表面的半导体衬底。 传输晶体管和光电检测器形成在前表面上。 转移晶体管的栅极包括光反射层。 包括光反射层的传输晶体管的栅极覆盖在光电检测器上。 入射到背面的光线和扫描光电检测器的辐射可以被光反射层反射。 可以由光电检测器感测反射的辐射。

公开(公告)号：US08054371B2

公开(公告)日：2011-11-08

申请号：US11676388

申请日：2007-02-19

Applicant: Ching-Chun Wang ,  Dun-Nian Yaung ,  Chien-Hsien Tseng ,  Shou-Gwo Wuu

Inventor： Ching-Chun Wang ,  Dun-Nian Yaung ,  Chien-Hsien Tseng ,  Shou-Gwo Wuu

IPC: H04N5/225 ,  H04N5/335 ,  G02B5/30 ,  H04L31/062

CPC classification number: G02B5/201 ,  G02B5/223

Abstract: An image sensor device includes a semiconductor substrate having a front surface and a back surface, pixels formed on the front surface of the semiconductor substrate, and grid arrays aligned with one of the pixels. One of the grid arrays is configured to allow a wavelength of light to pass through to the corresponding one of the pixels. The grid arrays are disposed overlying the front or back surface of the semiconductor substrate.

Abstract translation: 图像传感器装置包括具有前表面和后表面的半导体衬底，形成在半导体衬底的前表面上的像素和与像素之一对准的栅格阵列。 网格阵列中的一个被配置为允许光的波长通过到相应的一个像素。 栅格阵列设置在半导体衬底的前表面或后表面上。