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    SEMICONDUCTOR DEVICE INCLUDING FINFETS HAVING DIFFERENT GATE STRUCTURES AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
    43.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING FINFETS HAVING DIFFERENT GATE STRUCTURES AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE 有权
    包括具有不同门结构的熔体的半导体器件和制造半导体器件的方法

    公开(公告)号：US20160104705A1

    公开(公告)日：2016-04-14

    申请号：US14754400

    申请日：2015-06-29

    Applicant: Eun-ae Chung ,  Jung-dal Choi ,  Toshiro Nakanishi ,  Yu-bin Kim ,  Gab-jin Nam ,  Dong-kyu Lee ,  Guangfan Jiao

    Inventor： Eun-ae Chung ,  Jung-dal Choi ,  Toshiro Nakanishi ,  Yu-bin Kim ,  Gab-jin Nam ,  Dong-kyu Lee ,  Guangfan Jiao

    IPC: H01L27/088 ,  H01L27/12

    CPC classification number: H01L27/0886 ,  H01L21/823412 ,  H01L21/823431 ,  H01L27/1211

    Abstract: A semiconductor device includes a substrate having a logic device region including logic devices thereon, and an input/output (I/O) device region including I/O devices thereon adjacent the logic device region. A first fin field-effect transistor (FinFET) on the logic device region includes a first semiconductor fin protruding from the substrate, and a triple-gate structure having a first gate dielectric layer and a first gate electrode thereon. A second FinFET on the I/O device region includes a second semiconductor fin protruding from the substrate, and a double-gate structure having a second gate dielectric layer and a second gate electrode thereon. The first and second gate dielectric layers have different thicknesses. Related devices and fabrication methods are also discussed.

    Abstract translation: 半导体器件包括具有其上包括逻辑器件的逻辑器件区域的衬底，以及在其上邻近逻辑器件区域的包括I / O器件的输入/输出（I / O）器件区域。 逻辑器件区域上的第一鳍状场效应晶体管（FinFET）包括从衬底突出的第一半导体鳍片，以及在其上具有第一栅极电介质层和第一栅极电极的三栅极结构。 I / O器件区域上的第二FinFET包括从衬底突出的第二半导体鳍片，以及在其上具有第二栅极介电层和第二栅电极的双栅极结构。 第一和第二栅极电介质层具有不同的厚度。 还讨论了相关设备和制造方法。

    Methods of forming semiconductor devices using hard mask layers
    44.
    发明授权
    Methods of forming semiconductor devices using hard mask layers 有权
    使用硬掩模层形成半导体器件的方法

    公开(公告)号：US09281208B2

    公开(公告)日：2016-03-08

    申请号：US14165970

    申请日：2014-01-28

    Applicant: Sung-Min Kim ,  Ji-Su Kang ,  Dong-Kyu Lee ,  Dong-Ho Cha

    Inventor： Sung-Min Kim ,  Ji-Su Kang ,  Dong-Kyu Lee ,  Dong-Ho Cha

    IPC: H01L21/308 ,  H01L29/66 ,  H01L29/78 ,  H01L21/311

    CPC classification number: H01L21/3083 ,  H01L21/31144 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

    Abstract: A method of forming a semiconductor structure can include forming a photolithography mask on a silicon fin having a hard mask layer thereon extending in a first direction. A trench can be formed through the hard mask layer into the silicon fin using the photolithography mask, where the trench extends in a second direction to separate the silicon fin into first and second fin structures extending end-to-end in the first direction. A portion of the trench formed by the hard mask layer can be widened relative to a lower portion of the trench defined by the first and second fin structures.

    Abstract translation: 形成半导体结构的方法可以包括在其上具有在第一方向上延伸的硬掩模层的硅片上形成光刻掩模。 可以使用光刻掩模通过硬掩模层将沟槽形成为硅片，其中沟槽沿第二方向延伸，以将硅片分离成在第一方向上端对端延伸的第一和第二鳍结构。 由硬掩模层形成的沟槽的一部分可以相对于由第一和第二鳍结构限定的沟槽的下部加宽。

    Semiconductor device and method for fabricating the same
    45.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US09178044B2

    公开(公告)日：2015-11-03

    申请号：US14287240

    申请日：2014-05-27

    Applicant: Sung-Min Kim ,  Ji-Su Kang ,  Dong-Kyu Lee ,  Dong-Ho Cha

    Inventor： Sung-Min Kim ,  Ji-Su Kang ,  Dong-Kyu Lee ,  Dong-Ho Cha

    IPC: H01L21/3205 ,  H01L21/20 ,  H01L21/36 ,  H01L21/336 ,  H01L29/66 ,  H01L29/78

    CPC classification number: H01L29/785 ,  H01L29/66795

    Abstract: Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film.

    Abstract translation: 提供一种半导体器件及其制造方法。 制造半导体器件的方法包括：提供有源鳍片和场绝缘膜，其包括设置在有源鳍片上的第一沟槽; 通过对设置在所述第一沟槽的侧壁和下部的所述场绝缘膜进行第一蚀刻来形成第二沟槽; 通过对设置在所述第二沟槽的侧壁和下部的所述场绝缘膜进行第二蚀刻，在所述场绝缘膜中形成第一区域和第二区域，所述第一区域邻近所述活性鳍片设置，并且具有 与第一区域相比，第二区域与有效翅片间隔开，并且具有比第一厚度厚的第二厚度; 并在有源鳍片和场绝缘膜上形成栅极结构。

    Developing device and electrophotographic image forming apparatus including the same
    46.
    发明授权
    Developing device and electrophotographic image forming apparatus including the same 有权
    显影装置和包括其的电子照相成像装置

    公开(公告)号：US08983341B2

    公开(公告)日：2015-03-17

    申请号：US13562348

    申请日：2012-07-31

    Applicant: Ji-won Moon ,  Joo-hwan Noh ,  Dong-kyu Lee

    Inventor： Ji-won Moon ,  Joo-hwan Noh ,  Dong-kyu Lee

    IPC: G03G15/08 ,  G03G15/01 ,  G03G21/16

    CPC classification number: G03G15/0189 ,  G03G15/0121 ,  G03G21/1676

    Abstract: An electrophotographic image forming apparatus including first and second developing devices to develop electrostatic latent images formed on first and second photosensitive bodies, each of the first and second developing devices comprise a first toner containing unit to contain a toner, the second developing device further including a second toner containing unit that is connected to the first toner containing unit by a connecting unit.

    Abstract translation: 一种电子照相图像形成装置，包括第一和第二显影装置，用于显影形成在第一和第二感光体上的静电潜像，第一和第二显影装置中的每一个包括容纳调色剂的第一调色剂容纳单元，第二显影装置还包括 第二调色剂容纳单元，其通过连接单元连接到第一调色剂容纳单元。

    Organic layer deposition apparatus and method of manufacturing organic light-emitting display device by using the same
    47.
    发明授权
    Organic layer deposition apparatus and method of manufacturing organic light-emitting display device by using the same 有权
    有机层沉积装置及使用该有机发光显示装置的有机发光显示装置的制造方法

    公开(公告)号：US08859043B2

    公开(公告)日：2014-10-14

    申请号：US13468835

    申请日：2012-05-10

    Applicant: Dong-Kyu Lee ,  Mu-Hyun Kim ,  Young-Rok Song ,  Sang-Pil Lee ,  Jung-Bae Song ,  Jong-Heon Kim ,  Byung-Su Kim ,  Yun-Mi Lee ,  Jae-Kwang Ryu

    Inventor： Dong-Kyu Lee ,  Mu-Hyun Kim ,  Young-Rok Song ,  Sang-Pil Lee ,  Jung-Bae Song ,  Jong-Heon Kim ,  Byung-Su Kim ,  Yun-Mi Lee ,  Jae-Kwang Ryu

    IPC: C23C16/00 ,  H01L33/08 ,  C23C14/12 ,  C23C14/04 ,  C23C14/24

    CPC classification number: C23C14/042 ,  C23C14/12 ,  C23C14/243

    Abstract: An organic layer deposition apparatus for forming an organic layer on a substrate includes: a deposition source configured to discharge a deposition material; a deposition source nozzle unit arranged at a side of the deposition source and including a plurality of deposition source nozzles; and a patterning slit sheet facing the deposition source nozzle unit and including a plurality of patterning slits and at least one spacer arranged between a pair of adjacent patterning slits of the plurality of patterning slits, the patterning slit sheet being smaller than the substrate in at least one of a first direction or a second direction perpendicular to the first direction, and the substrate is spaced apart from the organic layer deposition apparatus by a predetermined distance, and at least one of the substrate or the organic layer deposition apparatus is movable relative to the other.

    Abstract translation: 用于在基板上形成有机层的有机层沉积装置包括：沉积源，其被配置为排出沉积材料; 沉积源喷嘴单元，布置在沉积源的一侧并且包括多个沉积源喷嘴; 以及与所述沉积源喷嘴单元相对并且包括多个图案化狭缝的图案化缝隙片和布置在所述多个图案化缝隙的一对相邻图案化缝隙之间的至少一个间隔件，所述图案化缝隙片材至少在所述衬底上至少 垂直于第一方向的第一方向或第二方向之一，并且基板与有机层沉积装置间隔预定距离，并且基板或有机层沉积装置中的至少一个可相对于 其他。

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