Picture display device having a flat vacuum tube
    41.
    发明授权
    Picture display device having a flat vacuum tube 失效
    具有平面真空管的图像显示装置

    公开(公告)号:US5966109A

    公开(公告)日:1999-10-12

    申请号:US787058

    申请日:1996-12-06

    IPC分类号: G09G1/20 H04N5/70 G09G3/22

    CPC分类号: H04N5/70 G09G1/20

    摘要: A picture display device having a flat vacuum envelope which is provided with a transparent face plate with a luminescent screen and with a rear wall, which display device has an electron supply section with an electron source for emitting electron currents in a direction parallel to the face plate, and an active selection electrode section with first, preselection, electrodes and second, fine-selection, electrodes, located closer to the screen, for directing each electron current towards desired pixels on the luminescent screen. The fine-selection electrodes are divided into groups and corresponding fine-selection electrodes of at least two groups are interconnected in a series or parallel arrangement in such a way that the technology of providing these electrodes is as simple as possible and/or the possible fine-selection electrode patterns are such that the number of required selection drivers can be reduced considerably.

    摘要翻译: 一种具有平面真空外壳的图像显示装置,该平面真空外壳设置有具有发光屏幕和后壁的透明面板,该显示装置具有电子供应部分,该电子源具有与平行于该面的方向发射电子流的电子源 并且具有位于更靠近屏幕的第一,预选择电极和第二精细选择电极的有源选择电极部分,用于将每个电子电流引向发光屏上的期望像素。 精选电极被分成组,并且至少两组的对应精选电极以串联或并联布置互连,使得提供这些电极的技术尽可能简单和/或可能的细 - 选择电极图案使得可以显着地减少所需的选择驱动器的数量。

    Flat-panel type picture display device
    42.
    发明授权
    Flat-panel type picture display device 失效
    平板式图像显示装置

    公开(公告)号:US5959397A

    公开(公告)日:1999-09-28

    申请号:US814449

    申请日:1997-03-10

    IPC分类号: H01J29/94 H01J31/12

    CPC分类号: H01J31/126

    摘要: A picture display device has a vacuum envelope and is provided with a face plate whose inner side supports a luminescent screen, a rear wall situated at a short distance therefrom, and the space in-between accommodating a plurality of electron sources, which cooperate with a plurality of electron transport ducts including dielectric walls for transporting, through vacuum, the produced electrons towards positions at a small distance from the luminescent screen. The display device further includes means for reducing the effects of undesired charge transfer of the duct walls, which are provided to improve the start-up and/or steady state electron transport conditions. Specifically, the outer sides of the duct rear walls are provided with a conductor to which an initiation potential is applied, which is equal to or higher than the potential applied for producing the electron transport field.

    摘要翻译: 图像显示装置具有真空外壳,并且设置有面板,其内侧支撑发光屏,位于距离其短距离的后壁,以及容纳多个电子源之间的空间,其与 多个电子传输管道包括介电壁,用于通过真空将所产生的电子传输到距离发光屏的距离较小的位置。 显示装置还包括用于减少管道壁的不期望的电荷转移的影响的装置,其被提供以改善启动和/或稳态电子传输条件。 具体地说,管道后壁的外侧设置有施加起始电位的导体,其等于或高于用于产生电子传输场的电位。

    Thin-type picture display device
    43.
    发明授权
    Thin-type picture display device 失效
    薄型图像显示装置

    公开(公告)号:US5442253A

    公开(公告)日:1995-08-15

    申请号:US210962

    申请日:1994-03-21

    摘要: Picture display device having a vacuum envelope for displaying pictures composed of pixels on a luminescent screen, comprising a plurality of juxtaposed sources for producing electrons, local electron ducts cooperating with the sources and having walls of electrically insulating material with a secondary emission coefficient suitable for electron transport for transporting, through vacuum, produced electrons in the form of electron currents through juxtaposed trajectories at a short distance from the luminescent screen, and means for withdrawing each electron current at predetermined locations from its duct and directing it towards a desired location on the luminescent screen for producing a picture composed of pixels.

    摘要翻译: 具有用于显示由荧光屏上的像素组成的图像的真空外壳的图像显示装置,包括用于产生电子的多个并置源,与源配合的局部电子管,并且具有适于电子的二次发射系数的电绝缘材料壁 运输通过真空,以电子流的形式通过与荧光屏短距离并列的轨迹产生电子,以及用于从预定位置从其管道中取出每个电子流并将其引导到发光管上的所需位置的装置 用于生成由像素组成的图片的画面。

    Semiconductor device having a cold cathode
    45.
    发明授权
    Semiconductor device having a cold cathode 失效
    具有冷阴极的半导体器件

    公开(公告)号:US4766340A

    公开(公告)日:1988-08-23

    申请号:US21564

    申请日:1987-03-02

    CPC分类号: H01J1/308

    摘要: In a semiconductor cathode, the electron-emitting part of a pn junction is provided in the tip of a projecting portion of the semiconductor surface which is situated within an opening in an insulating layer on which an acceleration electrode is disposed. Due to the increased electric field near the tip, a reduction of the work function (Schottky effect) is obtained. As a result, cathodes can be realized in which a material reducing the work function, such as caesium, may be either dispensed with or replaced, if required, by another material, which causes lower work function, but is less volatile. The field strength remains so low that no field emission occurs and serarate cathodes can be driven individually, which is favorable for applications in electron microscopy and electron lithography.

    摘要翻译: 在半导体阴极中,pn结的电子发射部分设置在半导体表面的突出部分的尖端中,半导体表面的突出部分位于设置有加速电极的绝缘层中的开口内。 由于尖端附近的电场增加,可以获得功函数(肖特基效应)的降低。 结果,可以实现阴极,其中如果需要,可以通过另一种材料来省去或替换诸如铯的功能降低功函数,这导致较低的功函数,但是较不易挥发。 场强保持如此之低,不会发生场发射,可以单独驱动平均阴极,这有利于电子显微镜和电子光刻中的应用。

    Electron sources and equipment having electron sources
    46.
    发明授权
    Electron sources and equipment having electron sources 失效
    具有电子源的电子源和设备

    公开(公告)号:US4516146A

    公开(公告)日:1985-05-07

    申请号:US439144

    申请日:1982-11-04

    CPC分类号: H01J1/308

    摘要: An electron source having a rapid response time comprises at least one n-p-n structure (and possibly an array of said n-p-n structure) formed in a silicon or other semiconductor body (10) by a p-type first region (1) between n-type second and third regions (2 and 3). Electrons (24) are generated in the n-p-n structure (2,1,3) for emission into free space (20) from a surface area (4) of the body (10) after flowing from the second region (2) through the first and third regions (1 and 3). The n-p-n structure (2,1,3) has electrode connections (12 and 13) only to the n-type second and third regions (2 and 3). The first region (1) provides a barrier region restricting the flow of electrons from the second region (2) to the third region (3) until a potential difference (V) is applied between the electrode connections (12 and 13) to bias the third region (3) positive with respect to the second region (2) and to establish a supply of hot electrons (24) injected into the third region (3) with sufficient energy to overcome the potential barrier present between the surface area (4) and free space (20). The barrier region (1) forms depletion layers with both the n-type second and third regions (2 and b 3) and is depleted of holes by the merging together of these depletion layers at least when the potential difference (V) is applied to establish said supply of hot electrons (24). The n-p-n structure can be provided in a mesa portion (9) of the body (10) at a window in an insulating layer (11) so as to form a compact arrangement having very low associated capacitances. The electron sources may be used in cathode-ray tubes, display devices and even electron lithography equipment.

    摘要翻译: 具有快速响应时间的电子源包括通过p型第一区域(1)在n型第二区域(1)中形成于硅或其它半导体本体(10)中的至少一个npn结构(以及可能的所述npn结构的阵列) 和第三区域(2和3)。 在npn结构(2,1,3)中产生电子(24),用于在从第二区域(2)流过第一区域(2)之后从主体(10)的表面区域(4)发射到自由空间(20) 和第三区域(1和3)。 n-p-n结构(2,1,3)仅具有到n型第二和第三区域(2和3)的电极连接(12和13)。 第一区域(1)提供限制从第二区域(2)到第三区域(3)的电子流动的势垒区域,直到在电极连接件(12和13)之间施加电位差(V) 第三区域(3)相对于第二区域(2)是正的,并以足够的能量建立注入到第三区域(3)中的热电子(24)的供应,以克服存在于表面区域(4) 和自由空间(20)。 阻挡区域(1)形成具有n型第二和第三区域(2和b 3)的耗尽层,并且通过将这些耗尽层合并在一起,至少当电位差(V)被施加到 建立热电子供应(24)。 n-p-n结构可以在绝缘层(11)中的窗口处设置在主体(10)的台面部分(9)中,以形成具有非常低的相关电容的紧凑布置。 电子源可以用于阴极射线管,显示装置甚至电子光刻设备中。