摘要:
A picture display device having a flat vacuum envelope which is provided with a transparent face plate with a luminescent screen and with a rear wall, which display device has an electron supply section with an electron source for emitting electron currents in a direction parallel to the face plate, and an active selection electrode section with first, preselection, electrodes and second, fine-selection, electrodes, located closer to the screen, for directing each electron current towards desired pixels on the luminescent screen. The fine-selection electrodes are divided into groups and corresponding fine-selection electrodes of at least two groups are interconnected in a series or parallel arrangement in such a way that the technology of providing these electrodes is as simple as possible and/or the possible fine-selection electrode patterns are such that the number of required selection drivers can be reduced considerably.
摘要:
A picture display device has a vacuum envelope and is provided with a face plate whose inner side supports a luminescent screen, a rear wall situated at a short distance therefrom, and the space in-between accommodating a plurality of electron sources, which cooperate with a plurality of electron transport ducts including dielectric walls for transporting, through vacuum, the produced electrons towards positions at a small distance from the luminescent screen. The display device further includes means for reducing the effects of undesired charge transfer of the duct walls, which are provided to improve the start-up and/or steady state electron transport conditions. Specifically, the outer sides of the duct rear walls are provided with a conductor to which an initiation potential is applied, which is equal to or higher than the potential applied for producing the electron transport field.
摘要:
Picture display device having a vacuum envelope for displaying pictures composed of pixels on a luminescent screen, comprising a plurality of juxtaposed sources for producing electrons, local electron ducts cooperating with the sources and having walls of electrically insulating material with a secondary emission coefficient suitable for electron transport for transporting, through vacuum, produced electrons in the form of electron currents through juxtaposed trajectories at a short distance from the luminescent screen, and means for withdrawing each electron current at predetermined locations from its duct and directing it towards a desired location on the luminescent screen for producing a picture composed of pixels.
摘要:
By providing an intrinsic semiconductor region in a reverse biased junction cathode between an n-type surface region and a p-type zone, a maximum field is present over the intrinsic region in the operating condition. The efficiency of the cathode is increased because avalanche multiplication can now occur over a greater distance, while in addition electrons to be emitted at a sufficient energy are generated by means of tunneling.
摘要:
In a semiconductor cathode, the electron-emitting part of a pn junction is provided in the tip of a projecting portion of the semiconductor surface which is situated within an opening in an insulating layer on which an acceleration electrode is disposed. Due to the increased electric field near the tip, a reduction of the work function (Schottky effect) is obtained. As a result, cathodes can be realized in which a material reducing the work function, such as caesium, may be either dispensed with or replaced, if required, by another material, which causes lower work function, but is less volatile. The field strength remains so low that no field emission occurs and serarate cathodes can be driven individually, which is favorable for applications in electron microscopy and electron lithography.
摘要:
An electron source having a rapid response time comprises at least one n-p-n structure (and possibly an array of said n-p-n structure) formed in a silicon or other semiconductor body (10) by a p-type first region (1) between n-type second and third regions (2 and 3). Electrons (24) are generated in the n-p-n structure (2,1,3) for emission into free space (20) from a surface area (4) of the body (10) after flowing from the second region (2) through the first and third regions (1 and 3). The n-p-n structure (2,1,3) has electrode connections (12 and 13) only to the n-type second and third regions (2 and 3). The first region (1) provides a barrier region restricting the flow of electrons from the second region (2) to the third region (3) until a potential difference (V) is applied between the electrode connections (12 and 13) to bias the third region (3) positive with respect to the second region (2) and to establish a supply of hot electrons (24) injected into the third region (3) with sufficient energy to overcome the potential barrier present between the surface area (4) and free space (20). The barrier region (1) forms depletion layers with both the n-type second and third regions (2 and b 3) and is depleted of holes by the merging together of these depletion layers at least when the potential difference (V) is applied to establish said supply of hot electrons (24). The n-p-n structure can be provided in a mesa portion (9) of the body (10) at a window in an insulating layer (11) so as to form a compact arrangement having very low associated capacitances. The electron sources may be used in cathode-ray tubes, display devices and even electron lithography equipment.
摘要:
The invention relates to a semiconductor cathode based on avalanche breakdown in the p-n junction. The released electrons obtain extra accelerating energy by means of an electrode provided on the device. The achieved efficiency increase makes the manufacture of such cathodes in planar silicon technology sensible. Such cathodes are applied, for example, in cathode ray tube, flat displays, pick-up tubes and electron lithography.