公开(公告)号：US20060057757A1

公开(公告)日：2006-03-16

申请号：US11212605

申请日：2005-08-29

申请人： Chul-min Park ,  Hong-sik Park ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Chul-min Park ,  Hong-sik Park ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L21/38

CPC分类号： G01Q70/10 ,  G01Q70/16

摘要： A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.

摘要翻译： 一种制造具有电阻尖端的半导体探针的方法。 该方法包括在硅衬底上形成具有矩形形状的第一和第二掩模膜，首先蚀刻硅衬底的上表面，通过蚀刻第一掩模膜形成与尖端颈部的宽度相对应的第三掩模膜，形成 通过使用第三掩模膜作为掩模对硅衬底进行第二次蚀刻，使尖端颈部的宽度达到预定宽度，并且在除去第三掩模膜之后通过退火硅衬底来形成尖端的峰形成部分。 可以制造具有均匀高度的半导体探针和具有均匀颈部宽度的尖端。

公开(公告)号：US08432001B2

公开(公告)日：2013-04-30

申请号：US12300177

申请日：2007-05-10

申请人： Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Yong-su Kim ,  Seung-bum Hong

发明人： Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Yong-su Kim ,  Seung-bum Hong

IPC分类号： H01L29/94 ,  H01L21/00

CPC分类号： G11B9/02

摘要： Provided is an electric field information reading head for reading information from a surface electric charge of an information storage medium, the electric field information reading head comprising a semiconductor substrate having a resistance region formed in a central part at one end of a surface facing a recording medium, the resistance region being lightly doped with impurities, and source and drain regions formed on both sides of the resistance region, the source region and the drain region being more highly doped with impurities than the resistance region. The source region and the drain region extend along the surface of the semiconductor substrate facing the recording medium, and electrodes are connected electrically with the source region and the drain region respectively. In addition, provided is a method of fabricating the electric field information reading head and a method of mass-producing the electric field information reading head on a wafer.

摘要翻译： 提供一种用于从信息存储介质的表面电荷读取信息的电场信息读取头，电场信息读取头包括半导体衬底，该半导体衬底具有形成在面向记录的表面的一端的中心部分的电阻区域 介质，电阻区域被轻掺杂杂质，形成在电阻区两侧的源区和漏区，源极区和漏区比电阻区更加掺杂杂质。 源极区域和漏极区域沿着面向记录介质的半导体衬底的表面延伸，并且电极分别与源极区域和漏极区域电连接。 此外，提供了制造电场信息读取头的方法和在晶片上批量生成电场信息读取头的方法。

公开(公告)号：US20110223279A1

公开(公告)日：2011-09-15

申请号：US13113534

申请日：2011-05-23

申请人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

发明人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

IPC分类号： B29C59/02

CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

摘要翻译： 提供了纳米压印母版及其制造方法。 该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

公开(公告)号：US07968253B2

公开(公告)日：2011-06-28

申请号：US11745609

申请日：2007-05-08

申请人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

发明人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

IPC分类号： G03F1/00

CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

摘要翻译： 提供了纳米压印母版及其制造方法。 该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

公开(公告)号：US07933190B2

公开(公告)日：2011-04-26

申请号：US11930223

申请日：2007-10-31

申请人： Dae-young Jeon ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Chul-min Park

发明人： Dae-young Jeon ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Chul-min Park

IPC分类号： G11B7/00

CPC分类号： G11B9/02

摘要： Provided are an electric field read/write device and a method of driving an electric field read/write device. The method including an electric field read/write head comprising a resistance region disposed between a source region and a drain region and a writing electrode disposed on the resistance region, wherein the method includes: applying a controlling voltage to the writing electrode, wherein the controlling voltage is smaller than a threshold voltage which causes polarization of a recording medium, and reproducing data recorded in the recording medium according to change of an amount of a current flowing through the resistance region according to a polarization direction of electric domains of the recording medium.

摘要翻译： 提供电场读/写装置和驱动电场读/写装置的方法。 该方法包括：电场读/写头，包括设置在源极区域和漏极区域之间的电阻区域和设置在电阻区域上的写入电极，其中所述方法包括：向所述写入电极施加控制电压，其中所述控制 电压小于导致记录介质的极化的阈值电压，并且根据记录介质的电畴的偏振方向根据流过电阻区域的电流量的变化再现记录在记录介质中的数据。

公开(公告)号：US07808025B2

公开(公告)日：2010-10-05

申请号：US11957511

申请日：2007-12-17

申请人： Hyoung-soo Ko ,  Chul-min Park ,  Ju-hwan Jung ,  Seung-bum Hong ,  Dae-young Jeon

发明人： Hyoung-soo Ko ,  Chul-min Park ,  Ju-hwan Jung ,  Seung-bum Hong ,  Dae-young Jeon

IPC分类号： G11B9/00 ,  G11B5/37

CPC分类号： G11B9/02 ,  G11B5/6082 ,  H01L29/78

摘要： An electric field read/write head, a method of manufacturing the same, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a resistance region formed in a substrate which comprises an end surface facing a recording medium; a source and a drain formed in the substrate and disposed on both sides of the resistance region, respectively; and an insulating layer and a write electrode formed sequentially on the resistance region, wherein the length (l) to width (w) ratio (l/w) of the resistance region satisfies (l/w)≧0.2.

摘要翻译： 提供电场读/写头，其制造方法和包括电场读/写头的信息存储装置。 电场读/写头包括：形成在基板中的电阻区域，包括面向记录介质的端面; 源极和漏极，分别形成在衬底中并设置在电阻区域的两侧; 以及在电阻区域上依次形成的绝缘层和写入电极，其中电阻区域的长度（1）与宽度（w）比（1 / w）满足（1 / w）≥0.2。

公开(公告)号：US07759954B2

公开(公告)日：2010-07-20

申请号：US11861417

申请日：2007-09-26

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park

IPC分类号： G01R31/02

CPC分类号： G01Q60/30 ,  G01Q80/00 ,  H01C13/00 ,  Y10T29/49082

摘要： Provided are a semiconductor probe having a resistive tip and a method of fabricating the semiconductor probe. The semiconductor probe includes a resistive tip which is doped with a first impurity, and of which an apex portion is doped with a low concentration of a second impurity of opposite polarity to the first impurity, wherein first and second semiconductor electrode regions doped with a high concentration of the second impurity is formed on slopes of the resistive tip; a dielectric layer formed on the resistive tip; an electric field shield which is formed on the dielectric layer, and forms a plane together with the dielectric layer on the apex portion of the resistive tip; and a cantilever having an end on which the resistive tip is located.

摘要翻译： 提供了具有电阻尖端的半导体探针和制造半导体探针的方法。 半导体探针包括掺杂有第一杂质的电阻尖端，其顶点部分掺杂有与第一杂质相反极性的低浓度第二杂质，其中掺杂高的第一和第二半导体电极区 第二杂质的浓度形成在电阻尖端的斜面上; 形成在电阻尖端上的电介质层; 形成在电介质层上的电场屏蔽层，与电阻顶端的顶点上的电介质层一起形成平面; 以及具有电阻尖端所在的端部的悬臂。

公开(公告)号：US07759153B2

公开(公告)日：2010-07-20

申请号：US11872065

申请日：2007-10-15

申请人： Chul-min Park ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Chul-min Park ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/331 ,  H01L21/8222

CPC分类号： G01Q60/30

摘要： A method of manufacturing an electric field sensor having an electric field shield. The method includes providing a substrate doped with a first impurity; forming a resistive tip having a resistance region doped with a low concentration of a second impurity at an apex of a protruding portion of the substrate, and first and second semiconductor electrode regions doped with a high concentration of the second impurity on both slopes of the protruding portion with the resistive region therebetween, wherein the second impurity has a polarity opposite to that of the first impurity; forming a dielectric layer on the resistive tip; forming a mask having a high aspect ratio on the dielectric layer; depositing a metal layer on the dielectric layer; and exposing the dielectric layer formed on the resistance region through the metal layer by removing the mask.

摘要翻译： 一种制造具有电场屏蔽的电场传感器的方法。 该方法包括提供掺杂有第一杂质的衬底; 在所述基板的突出部的顶点形成具有掺杂有低浓度的第二杂质的电阻区域的电阻端头，以及在所述突出部的两个斜面上掺杂有高浓度的所述第二杂质的第一和第二半导体电极区域 其中所述第二杂质具有与所述第一杂质的极性相反的极性; 在电阻尖端上形成电介质层; 在介电层上形成具有高纵横比的掩模; 在介电层上沉积金属层; 并且通过去除掩模，使形成在电阻区域上的电介质层通过金属层曝光。

公开(公告)号：US07605014B2

公开(公告)日：2009-10-20

申请号：US11498095

申请日：2006-08-03

申请人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L21/00

CPC分类号： G11B9/1418 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q70/16 ,  G01Q80/00

摘要： A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.

摘要翻译： 一种制造具有自对准金属屏蔽的电阻式探头的方法。 该方法包括在衬底的电阻端上顺序地形成第一绝缘层，金属屏蔽和第二绝缘层; 蚀刻第二绝缘层以在电阻区域上暴露金属屏蔽; 蚀刻暴露的金属屏蔽; 并蚀刻第一绝缘层以暴露电阻区域。

公开(公告)号：US07528371B2

公开(公告)日：2009-05-05

申请号：US11448723

申请日：2006-06-08

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

IPC分类号： G01N23/00

CPC分类号： G01Q70/16 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q80/00 ,  G11B9/02 ,  G11B9/1409 ,  Y10S977/861

摘要： A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.

摘要翻译： 提供具有低纵横比的电阻尖端和制造半导体探针的方法的半导体探针。 半导体探针包括电阻尖端和悬臂，其具有阻挡尖端所在的端部。 掺杂有第一杂质的电阻尖端包括形成在电阻尖端的峰处的电阻区，并且轻掺杂有与第一杂质极性相反的第二杂质，以及形成在电阻尖端的倾斜表面上的第一和第二半导体电极区 并重掺杂第二杂质。 电阻尖端的高度小于电阻尖端的半径。 因此，提高了半导体探针的空间分辨率。