公开(公告)号：US06881686B1

公开(公告)日：2005-04-19

申请号：US10805120

申请日：2004-03-19

Applicant: Robert S. Sposili ,  Mark A. Crowder ,  Apostolos T. Voutsas

Inventor： Robert S. Sposili ,  Mark A. Crowder ,  Apostolos T. Voutsas

IPC: C30B1/00 ,  C30B13/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L21/26 ,  H01L21/324 ,  H01L21/42

CPC classification number: H01L21/02686 ,  C30B13/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1285

Abstract: A process of lateral crystallization comprises providing a silicon film on a substrate surface, exposing a localized substrate region at the substrate surface to a laser heating source, and annealing a portion of the silicon film in thermal contact with the localized substrate region by exposing the silicon film to a low-fluence optical annealing source.

公开(公告)号：US06733931B2

公开(公告)日：2004-05-11

申请号：US10099376

申请日：2002-03-13

Applicant: Apostolos Voutsas ,  Mark A. Crowder ,  Yasuhiro Mitiani

Inventor： Apostolos Voutsas ,  Mark A. Crowder ,  Yasuhiro Mitiani

IPC: H01L2100

CPC classification number: H01L21/0268 ,  B23K26/066 ,  B23K2101/40 ,  H01L21/2026 ,  H01L21/268 ,  Y10S430/146

Abstract: A system and method are provided for laser irradiating a semiconductor substrate using a multi-pattern mask. The method comprises: exposing a semiconductor substrate to laser light projected through a multi-pattern mask; advancing the mask and substrate in a first direction to sequentially expose adjacent areas of the substrate to each of the mask patterns in a first predetermined order; and, advancing the mask and substrate in a second direction, opposite the first direction, to sequentially expose adjacent areas of the substrate to each of the mask patterns in the first order. In one aspect, the method further comprises: forming a multi-pattern mask having a first plurality patterns aligned in the first order with respect to the first direction and a second plurality of patterns, corresponding to the first plurality of patterns, aligned in the first order with respect to the second direction. Alternately, the method comprises: forming a first multi-pattern mask having a first plurality patterns aligned in the first order with respect to the first direction; and, forming a second multi-pattern mask having a second plurality of patterns, corresponding to the first plurality of patterns, aligned in the first order with respect to the second direction. Then, advancing the mask and substrate in the first direction includes using the first mask, and advancing the mask and substrate in the second direction, opposite the first direction, includes using the second mask.

Abstract translation: 提供一种用于使用多图案掩模激光照射半导体衬底的系统和方法。 该方法包括：将半导体衬底暴露于通过多图案掩模投影的激光; 在第一方向上推进掩模和衬底，以按照第一预定顺序顺序地将衬底的相邻区域暴露于每个掩模图案; 并且在与第一方向相反的第二方向上前进掩模和衬底，以一级顺序地将衬底的相邻区域依次暴露于每个掩模图案。 一方面，该方法还包括：形成具有相对于第一方向以一级对准的第一多个图案的多图案掩模和对应于第一多个图案的第二多个图案，第二多个图案在第一 相对于第二个方向的顺序。 或者，该方法包括：形成具有相对于第一方向以第一顺序排列的第一多个图案的第一多图案掩模; 并且形成具有与所述第一多个图案对应的第二多个图案的第二多图案掩模，所述第一多个图案相对于所述第二方向以第一顺序排列。 然后，在第一方向上推进掩模和衬底包括使用第一掩模，并且使掩模和衬底沿与第一方向相反的第二方向前进，包括使用第二掩模。

公开(公告)号：US06573531B1

公开(公告)日：2003-06-03

申请号：US09390537

申请日：1999-09-03

Applicant: James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

Inventor： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC: H01L2904

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/2026

Abstract: System and methods for processing an amorphous silicon thin film sample into a single or polycrystalline silicon thin film are disclosed. The system includes an excimer laser for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator for controllably modulating fluence of the excimer laser pulses, a beam homoginizer for homoginizing modulated laser pulses in a predetermined plane, a mask for masking portions of the homoginized modulated laser pulses into patterned beamlets, a sample stage for receivingthe patterned beamlets to effect melting of portions of any amorphous silicon thin film sample placed thereon corresponding to the beamlets, translating means for controllably translating a relative position of the sample stage with respect to a position of the mask and a computer for controlling the controllable fluence modulation of the excimer laser pulses and the controllable relative positions of the sample stage and mask, and for coordinating excimer pulse generation and fluence modulation with the relative positions of the sample stage and mask, to thereby process amorphous silicon thin film sample into a single or polycrystalline silicon thin film by sequential translation of the sample stage relative to the mask and irradiation of the sample by patterned beamlets of varying fluence at corresponding sequential locations thereon.

Abstract translation: 公开了将非晶硅薄膜样品加工成单个或多晶硅薄膜的系统和方法。 该系统包括用于产生预定能量密度的多个准分子激光脉冲的准分子激光器，用于可控地调制准分子激光脉冲的注量的能量密度调制器，用于在预定平面中均匀化调制的激光脉冲的光束均质器，用于掩蔽的掩模 将均质化的调制的激光脉冲的部分转换成图案化的子束，样品台，用于接收图案化的子束以实现对应于子束放置在其上的任何非晶硅薄膜样品的部分的熔化，用于可控地将样品台的相对位置与 相对于掩模的位置和用于控制准分子激光脉冲的可控注量调制和样品台和掩模的可控相对位置的计算机，并且用于将准分子脉冲产生和能量密度调制与样品台的相对位置协调 和面具，从而处理amorp 通过对样品台相对于掩模进行顺序平移，并通过在其上相应的顺序位置上具有变化的注量的图案化的子束照射样品，将壳硅薄膜样品转变为单个或多晶硅薄膜。