Abstract:
A street lamp apparatus. The apparatus has a housing having an inner region and an outer region. In a specific embodiment, the inner region forms a cavity structure. The apparatus also has a transparent cover coupled to the housing to enclose the inner region and a socket being provided within the cavity structure. The apparatus has an electrodeless plasma lamp coupled to the socket. In a specific embodiment, the apparatus has an RF power source provided between the socket and an AC power source. In a specific embodiment, the RF power source is configured to generate a frequency of about 1 GHz and less to cause a fill material in the plasma lamp to discharge. In a specific embodiment, the apparatus has a heat sink provided form one or more portions of the housing. In a specific embodiment, the one or more portions of the housing is thermally coupled to the RF power source.
Abstract:
A plasma electrodeless lamp comprises a substantially hollow metallic body, closely receiving two coupling elements, the first coupling element connected to the output of an RF amplifier, and the second coupling element connected to the input of an RF amplifier. The first coupling element is conductively connected (grounded) to metallic lamp body at its top surface, while the second coupling element is not. The lamp further comprises a vertical metallic post, the post being grounded to the metallic lamp body at the post's bottom surface. The lamp further comprises a dielectric sleeve which closely receives the metallic post, and which is in turn closely supported by the lamp body or alternatively or in combination a tuning stub. The lamp further comprises a bulb that is closely received by the metallic post, and that encloses a gas-fill which forms a radiant plasma when excited.
Abstract:
Described is a plasma electrode-less lamp. The device comprises an electromagnetic resonator and an electromagnetic radiation source conductively connected with the electromagnetic resonator. The device further comprises a pair of field probes, the field probes conductively connected with the electromagnetic resonator. A gas-fill vessel is formed from a closed, transparent body, forming a cavity. The gas-fill vessel is not contiguous with (detached from) the electromagnetic resonator and is capacitively coupled with the field probes. The gas-fill vessel further contains a gas within the cavity, whereby the gas is induced to emit light when electromagnetic radiation from the electromagnetic radiation source resonates inside the electromagnetic resonator, the electromagnetic resonator capacitively coupling the electromagnetic radiation to the gas, which becomes a plasma and emits light.
Abstract:
Described is an electrode-less plasma lamp comprising a gas-fill vessel, a gas-fill contained within the gas-fill vessel, an RF electromagnetic radiation source, an RF electromagnetic resonator, an output probe that couples RF energy from the RF electromagnetic resonator to the gas-fill vessel, an input probe that couples RF energy from the RF electromagnetic radiation source to the resonator, and a grounding strap that holds a metal veneer surrounding the resonator and a portion of the gas-fill vessel at RF ground. Also described are many variations of the electrode-less plasma lamp, non-limiting examples of which include embodiments that employ other probes in a Dielectric Resonant Oscillator to drive the lamp, a lamp employing more than one resonator per gas-fill vessel, and many methods of improving light-harvesting, including raising the gas-fill vessel away from the resonator via a coaxial transmission line, and collecting light with an optical reflector.
Abstract:
An electrode-less plasma lamps comprises generally of a bulb containing a gas-fill that is excited to produce light using radio-frequency (RF) energy. In specific embodiments, the use of grounded coupling-elements with integrated bulb assemblies simplifies manufacturability, improves resonant frequency control, and enables the use of solid, partially filled, and hollow lamp bodies. In some embodiments, a method of operating an electrodeless plasma lamp device includes transferring RF energy from the RF source to an input coupling-element and illuminating electromagnetic energy substantially from the length of a gas-filled vessel from discharge of the gas-filled vessel.
Abstract:
A method for assembling an electronic system with a plurality of layers. Recesses in formed in one or more dielectric layers and electronic components are positioned within the recesses. One or more layers containing the components are placed on a host substrate containing host circuits. Electrical interconnects are provided between and among the electronic components in the dielectric layers and the host circuits. The layers containing the components may also be provided by growing the electronic devices on a growth substrate. The growth substrate is then removed after the layer is attached to the host substrate.
Abstract:
Described is a plasma electrode-less lamp. The device comprises an electromagnetic resonator and an electromagnetic radiation source conductively connected with the electromagnetic resonator. The device further comprises a pair of field probes, the field probes conductively connected with the electromagnetic resonator. A gas-fill vessel is formed from a closed, transparent body, forming a cavity. The gas-fill vessel is not contiguous with (detached from) the electromagnetic resonator and is capacitively coupled with the field probes. The gas-fill vessel further contains a gas within the cavity, whereby the gas is induced to emit light when electromagnetic radiation from the electromagnetic radiation source resonates inside the electromagnetic resonator, the electromagnetic resonator capacitively coupling the electromagnetic radiation to the gas, which becomes a plasma and emits light.
Abstract:
Microelectromechanical RF and microwave frequency power limiter and electrostatic protection devices for use in high-speed circuits are presented. The devices utilize an airbridge or a cantilever arm including a contact pad positioned operatively adjacent to an electrically conductive and substantially planar transmission line. When the power level in the transmission line exceeds a particular threshold, the airbridge or cantilever arm yields due to force between the contact pad and the transmission line, directing undesired power away from active devices. This characteristic can either serve as a method by which to limit the amount of power passing through the transmission line to a determined value or as a method by which to protect devices along the transmission line from damage due to large electrostatic bursts.
Abstract:
The present invention provides a flexible mechanical bridge over a microstrip on a substrate, which utilizes an electromagnetic field increase, as generated by temporary power surge to shunt harmful power away from a MMIC system. The invention includes a power limiter which includes an airbridge 11, preferably in the form of an electrically conductive strip with ground contacts 1 and 3 formed thereon. The ground contacts 1 and 2 are electrically connected, through via holes 5 and 7 respectively, to a metallization layer 15 formed on the bottom side of a substrate 9. The air bridge 11 is designed such that it traverses an electrically conductive microstrip 13 forming an air gap 16 between the air bridge 11 and the electrically conductive microstrip 13. When there is a power surge the air bridge 11, will flex to cause an electrical connection with the microstrip 13, thereby directing the unwanted signal through the ground contacts 1 and 3 and the via holes 5 and 7 to the metallization layer 15.
Abstract:
A high electron mobility transistor (HEMT) includes a substrate comprising indium phosphide and an optional buffer layer immediately adjacent the substrate. A channel layer immediately is adjacent the buffer layer, with the channel layer comprising indium phosphide antimonide and characterized by a formula of InPxSb(1−x), wherein x is about 0.85. The channel layer has a thickness of about 120 Angstroms. A Schottky layer is immediately adjacent the channel layer and a contact layer is immediately adjacent the Schottky layer. The transistor is characterized by a breakdown field of about 400 kV/cm and a saturated velocity of about 8.2×106 cm/s.