公开(公告)号：US20050231787A1

公开(公告)日：2005-10-20

申请号：US10926053

申请日：2004-08-26

Applicant: Osamu Tsuboi ,  Norinao Kouma ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

Inventor： Osamu Tsuboi ,  Norinao Kouma ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

IPC: B81B3/00 ,  G02B26/00 ,  G02B26/08

CPC classification number: G02B26/0841

Abstract: A micro-oscillation element includes a frame, a movable functional part, a driving mechanism, a beam extending from the functional part to the driving mechanism, and a torsion connector for connecting the frame and the beam to each other. The connector defines a rotational axis about which the functional part rotates. The rotational axis crosses the longitudinal direction of the beam. The beam is shorter than the functional part in the longitudinal direction of the rotational axis.

Abstract translation: 微振荡元件包括框架，可动功能部件，驱动机构，从功能部件延伸到驱动机构的梁，以及用于将框架和梁彼此连接的扭转连接器。 连接器限定了功能部件绕其旋转的旋转轴线。 旋转轴线与梁的纵向方向交叉。 光束比旋转轴的纵向方向上的功能部分短。

公开(公告)号：US06946398B2

公开(公告)日：2005-09-20

申请号：US10651051

申请日：2003-08-29

Applicant: Shoji Okuda ,  Hiroshi Tokunaga ,  Osamu Tsuboi

Inventor： Shoji Okuda ,  Hiroshi Tokunaga ,  Osamu Tsuboi

IPC: G02B26/08 ,  B81B3/00 ,  B81C1/00 ,  H01L21/302

CPC classification number: B81C1/0019 ,  B81B2201/0271 ,  B81C2201/0136 ,  B81C2201/019

Abstract: The method for fabricating a micro machine comprises the step of burying an oxide film 54 in a first semiconductor substrate 6, the step of bonding the first semiconductor substrate to the second semiconductor substrate with an insulation film 18 therebetween, the step of forming a first mask 66 with an opening in a first region and a second region on both sides of the first region, the step of etching the first semiconductor substrate with a first mask 66 and an oxide film 54 as a mask to thereby form a spring portion 20a integral with the first semiconductor substrate between the oxide film and the insulation film to thereby form a torsion bar including the spring portion, the step of forming a second mask 74 with an opening in the first region and the second region, the step of etching the second semiconductor substrate by using the second mask 74, and the step of etching the insulation film 18 in the first region and the second region. The thickness of the torsion bar can be easily controlled. Thus, a micro machine having a torsion bar can be fabricated with high yields.

Abstract translation: 微机的制造方法包括在第一半导体基板6中埋入氧化膜54的步骤，将第一半导体基板与绝缘膜18接合在第二半导体基板上的工序，形成第一掩模 66，在第一区域的第一区域和第二区域的开口，第一区域的两侧的第二区域，用第一掩模66和氧化物膜54作为掩模蚀刻第一半导体衬底的步骤，从而形成一个一体化的弹簧部分20 其中第一半导体衬底在氧化物膜和绝缘膜之间，从而形成包括弹簧部分的扭杆，在第一区域和第二区域中形成具有开口的第二掩模74的步骤， 通过使用第二掩模74的半导体衬底以及蚀刻第一区域和第二区域中的绝缘膜18的步骤。 可以容易地控制扭杆的厚度。 因此，可以以高产率制造具有扭杆的微型机器。

公开(公告)号：US20050162730A1

公开(公告)日：2005-07-28

申请号：US11082881

申请日：2005-03-18

Applicant: Osamu Tsuboi ,  Satoshi Ueda ,  Yoshihiro Mizuno ,  Ippei Sawaki ,  Fumio Yamagishi

Inventor： Osamu Tsuboi ,  Satoshi Ueda ,  Yoshihiro Mizuno ,  Ippei Sawaki ,  Fumio Yamagishi

IPC: B81B3/00 ,  B81C1/00 ,  G02B26/08 ,  G11B7/09 ,  G02B26/00

CPC classification number: B81C1/00142 ,  B81B3/0078 ,  B81B2201/042 ,  B81B2201/045 ,  B81B2203/0136 ,  B81B2203/0181 ,  B81B2203/058 ,  B81C1/00396 ,  G02B26/0841 ,  Y10S359/904

Abstract: A method is provided for making a micromirror unit which includes a frame, a mirror forming base, and bridges connecting the frame to the mirror forming base. The method includes the following steps. First, a first mask pattern is formed on a substrate for masking portions of the substrate which are processed into the frame and the mirror forming base. Then, a second mask pattern is formed on the substrate for masking portions of the substrate which are processed into the bridges. Then, the substrate is subjected to a first etching process with the first and the second mask patterns present as masking means. Then, the second mask pattern is removed selectively. Then, the substrate is subjected to a second etching process with the first mask pattern present as masking means. Finally, the first mask pattern is removed.

公开(公告)号：US20050134951A1

公开(公告)日：2005-06-23

申请号：US11053880

申请日：2005-02-10

Applicant: Xiaoyu Mi ,  Osamu Tsuboi ,  Satoshi Ueda ,  Ippei Sawaki

Inventor： Xiaoyu Mi ,  Osamu Tsuboi ,  Satoshi Ueda ,  Ippei Sawaki

IPC: B81B3/00 ,  B81B5/00 ,  G02B26/08 ,  G02B26/10

CPC classification number: G02B26/0841 ,  B81B3/007 ,  B81B2201/0235 ,  B81B2201/033 ,  B81B2201/042 ,  B81B2203/0109 ,  B81B2203/0154 ,  B81B2203/058

Abstract: A micro-oscillating element is provided with a frame (113) and a oscillating member (111) connected with the frame (113) via a connector (112). Each connector (112) includes two torsion bars (112a), each torsion bar (112a) being constructed so that the rigidity becomes relatively high toward the frame (113) and relatively low toward the oscillating member (111) by forming a plurality of holes (112b).

Abstract translation: 微振动元件设置有经由连接器（112）与框架（113）连接的框架（113）和摆动构件（111）。 每个连接器（112）包括两个扭杆（112a），每个扭杆（112a）被构造成使得刚性通过形成多个相对于框架（113）而相对较低朝着摆动构件（111）变得相对较高 的孔（112b）。

公开(公告)号：US06891650B2

公开(公告)日：2005-05-10

申请号：US10755339

申请日：2004-01-13

Applicant: Yoshihiro Mizuno ,  Satoshi Ueda ,  Osamu Tsuboi ,  Ippei Sawaki ,  Hisao Okuda ,  Fumio Yamagishi ,  Norinao Kouma

Inventor： Yoshihiro Mizuno ,  Satoshi Ueda ,  Osamu Tsuboi ,  Ippei Sawaki ,  Hisao Okuda ,  Fumio Yamagishi ,  Norinao Kouma

IPC: B01D53/88 ,  B01J8/04 ,  B81B3/00 ,  B81C1/00 ,  C01B3/16 ,  G02B26/08

CPC classification number: G02B26/0841 ,  B01D53/885 ,  B01J8/0453 ,  B01J8/0496 ,  B01J2208/00212 ,  B01J2208/00309 ,  B01J2208/025 ,  B81B2201/045 ,  B81B2203/0136 ,  B81C1/00142 ,  B81C1/00626 ,  B81C2201/0142 ,  C01B3/16 ,  C01B2203/0288 ,  C01B2203/045 ,  C01B2203/0485 ,  Y10S359/904

Abstract: A method of making a micromirror unit is provided. In accordance with the method, a micromirror unit is made from a material substrate having a multi-layer structure composed of silicon layers and at least one intermediate layer. The resulting micromirror unit includes a mirror forming base, a frame and a torsion bar. The method includes the following steps. First, a pre-torsion bar is formed by subjecting one of the silicon layers to etching. The obtained pre-torsion bar is rendered smaller in thickness than the mirror forming base and is held in contact with the intermediate layer. Then, the desired torsion bar is obtained by removing the intermediate layer contacting with the pre-torsion bar.

Abstract translation: 提供了制造微镜单元的方法。 根据该方法，微镜单元由具有由硅层和至少一个中间层构成的多层结构的材料基板制成。 所得到的微镜单元包括反射镜形成基座，框架和扭杆。 该方法包括以下步骤。 首先，通过使一个硅层进行蚀刻来形成预扭杆。 所获得的预扭杆的厚度比反射镜形成基座的厚度小，并与中间层保持接触。 然后，通过去除与预扭杆接触的中间层来获得所需的扭力杆。

公开(公告)号：US20050046980A1

公开(公告)日：2005-03-03

申请号：US10962445

申请日：2004-10-13

Applicant: Yoshihiro Mizuno ,  Satoshi Ueda ,  Osamu Tsuboi ,  Ippei Sawaki ,  Hisao Okuda ,  Norinao Kouma ,  Hiromitsu Soneda ,  Fumio Yamagishi

Inventor： Yoshihiro Mizuno ,  Satoshi Ueda ,  Osamu Tsuboi ,  Ippei Sawaki ,  Hisao Okuda ,  Norinao Kouma ,  Hiromitsu Soneda ,  Fumio Yamagishi

IPC: B81B3/00 ,  B81C1/00 ,  G02B26/08 ,  G02B7/182 ,  G02F1/29

CPC classification number: G02B26/0841 ,  B81B2201/045 ,  B81B2203/0136 ,  B81C1/00182 ,  B81C2203/0109 ,  Y10S359/904

Abstract: A micro mirror unit includes a moving part carrying a mirror portion, a frame and torsion bars connecting the moving part to the frame. The moving part, the frame and the torsion bars are formed integral from a material substrate. The frame includes a portion thicker than the moving part.

Abstract translation: 微镜单元包括承载镜部分的移动部分，框架和将移动部件连接到框架的扭杆。 移动部件，框架和扭杆从材料基板形成为一体。 框架包括比移动部分更厚的部分。

公开(公告)号：US20050037531A1

公开(公告)日：2005-02-17

申请号：US10791903

申请日：2004-03-04

Applicant: Norinao Kouma ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Mi Xiaoyu ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

Inventor： Norinao Kouma ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Mi Xiaoyu ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

IPC: B81C1/00 ,  B81B3/00 ,  H01L21/00 ,  H01L29/84

CPC classification number: B81C1/00626 ,  B81B2201/0235 ,  B81B2201/042 ,  B81B2203/0136 ,  B81B2203/04

Abstract: A method for manufacturing a micro-structural unit is provided. By the method, micro-machining is performed on a material substrate including first through third conductive layers and two insulating layers, one of which is interposed between the first and the second conductive layers, and the other between the second and the third conductive layers. The method includes several etching steps performed on the layers of the material substrate that are different in thickness.

Abstract translation: 提供一种微结构单元的制造方法。 通过该方法，在包括第一至第三导电层和两个绝缘层的材料基板上进行微加工，其中一个绝缘层介于第一和第二导电层之间，另一个位于第二和第三导电层之间。 该方法包括在不同厚度的材料基底的层上执行的几个蚀刻步骤。

公开(公告)号：US06620674B1

公开(公告)日：2003-09-16

申请号：US09638139

申请日：2000-08-15

Applicant: Kazuo Itabashi ,  Osamu Tsuboi ,  Yuji Yokoyama ,  Kenichi Inoue ,  Koichi Hashimoto ,  Wataru Futo

Inventor： Kazuo Itabashi ,  Osamu Tsuboi ,  Yuji Yokoyama ,  Kenichi Inoue ,  Koichi Hashimoto ,  Wataru Futo

IPC: H01L218242

CPC classification number: H01L27/10852 ,  H01L21/76897 ,  H01L27/105 ,  H01L27/10805 ,  H01L27/10817 ,  H01L28/91

Abstract: A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first insulating film; a pair of contact holes formed through the second insulating film and reaching the impurity diffusion regions; a conductive plug embedded in one of the contact holes; a third insulating film formed on the second insulating film covering the conductive plug, and having a first aperture on the other contact hole; a bit line formed on the third insulating film and connected to the other impurity diffusion region through the first aperture and the other contact hole; a fourth insulating film covering the upper and side surfaces of the bit line; a second aperture formed through the third insulating film in alignment with the fourth insulating film covering the side surface of the bit line; a storage electrode formed to extend over the bit line, insulated from the bit line by the third and fourth insulating films, and electrically connected to the conductive plug through the second aperture.

Abstract translation: 一种半导体存储器件，包括：覆盖栅电极的上表面和侧表面的第一绝缘膜; 形成在覆盖所述第一绝缘膜的所述基板上的第二绝缘膜; 形成在所述第二绝缘膜上并到达所述杂质扩散区的一对接触孔; 嵌入在所述接触孔之一中的导电插塞; 第三绝缘膜，形成在覆盖所述导电插塞的所述第二绝缘膜上，并且在所述另一个接触孔上具有第一孔; 形成在第三绝缘膜上并通过第一孔和另一个接触孔连接到另一个杂质扩散区的位线; 覆盖位线的上表面和侧表面的第四绝缘膜; 与覆盖所述位线的侧面的所述第四绝缘膜对准的通过所述第三绝缘膜形成的第二孔; 存储电极，其形成为在所述位线上延伸，通过所述第三和第四绝缘膜与所述位线绝缘，并且通过所述第二孔电连接到所述导电插塞。

公开(公告)号：US08520279B2

公开(公告)日：2013-08-27

申请号：US12614903

申请日：2009-11-09

Applicant: Norinao Kouma ,  Osamu Tsuboi ,  Tsuyoshi Matsumoto

Inventor： Norinao Kouma ,  Osamu Tsuboi ,  Tsuyoshi Matsumoto

IPC: G02B26/08

CPC classification number: G02B26/0841 ,  G01J3/4535 ,  H02N1/006

Abstract: A micro movable device includes a movable member, a stationary portion, and connecting portions each connected to the movable member and the stationary portion. The movable member includes a pair of electrodes. The stationary portion includes a pair of electrodes cooperating with the electrodes of the movable member to generate a driving force for translating the movable member in its thickness direction. The connection points at which the respective connecting portions are connected to the movable member are spaced from each other. The electrodes of the movable member are positioned between two mutually spaced connection points, as viewed along the spacing direction of the two connection points.

Abstract translation: 微型可移动装置包括可移动部件，固定部分和连接到可移动部件和固定部分的连接部分。 可动构件包括一对电极。 固定部分包括与可动构件的电极配合的一对电极，以产生用于在可移动构件的厚度方向上平移的驱动力。 各连接部分连接到可移动部件的连接点彼此间隔开。 当沿着两个连接点的间隔方向观察时，可动构件的电极位于两个相互间隔的连接点之间。

公开(公告)号：US08471152B2

公开(公告)日：2013-06-25

申请号：US13091728

申请日：2011-04-21

Applicant: Yoshihiro Mizuno ,  Norinao Kouma ,  Hisao Okuda ,  Hiromitsu Soneda ,  Tsuyoshi Matsumoto ,  Osamu Tsuboi

Inventor： Yoshihiro Mizuno ,  Norinao Kouma ,  Hisao Okuda ,  Hiromitsu Soneda ,  Tsuyoshi Matsumoto ,  Osamu Tsuboi

IPC: H05K1/03

CPC classification number: B81C1/00698 ,  Y10T29/49117

Abstract: A microstructure comprises a laminate structure having a first conductor, a second conductor, and an intervening insulator located between the first and the second conductors. The first conductor includes opposite faces in relation to the second conductor, side faces, and edge parts which form the boundaries of the aforementioned opposite faces and side faces. The second conductor includes an extended face extending beyond the edge parts exceeding the first conductor. The insulation film includes an area covering at least part of an edge part and/or at least part of a side face.

Abstract translation: 微结构包括具有第一导体，第二导​​体和位于第一和第二导体之间的中间绝缘体的层压结构。 第一导体包括相对于第二导体的相对面，侧面和形成上述相对面和侧面的边界的边缘部分。 第二导体包括延伸超过超过第一导体的边缘部分的延伸面。 绝缘膜包括覆盖边缘部分的至少一部分和/或侧面的至少一部分的区域。