公开(公告)号：US08159589B2

公开(公告)日：2012-04-17

申请号：US12427214

申请日：2009-04-21

申请人： Seung Hyun Lim ,  Gun Hee Han ,  Seog Heon Ham

发明人： Seung Hyun Lim ,  Gun Hee Han ,  Seog Heon Ham

IPC分类号： H04N5/335

CPC分类号： H04N5/37455 ,  G11C7/16

摘要： An image sensor for high-speed data readout is provided. The image sensor includes a line memory block temporarily storing a digital signal in unit of lines which is generated based on an analog signal output from a pixel array. The line memory block includes a plurality of line memories, a plurality of data line pairs respectively connecting the line memories to a sense amplifying unit, and a plurality of data line prechargers each including at least two precharge units separately connected with a corresponding one of the data line pairs to precharge the corresponding data line pair with a predetermined precharge voltage. Accordingly, the image sensor performs high-speed digital signal readout based on precharge operation of the data line prechargers.

摘要翻译： 提供了用于高速数据读出的图像传感器。 该图像传感器包括一个行存储块，其临时存储基于从像素阵列输出的模拟信号产生的行单位的数字信号。 行存储块包括多个行存储器，分别将行存储器连接到读出放大单元的多个数据线对，以及多个数据线预充电器，每个数据线预充电器包括分别与相应的一个 数据线对以预定的预充电电压对相应的数据线对进行预充电。 因此，图像传感器基于数据线预充电器的预充电操作来执行高速数字信号读出。

公开(公告)号：US07973357B2

公开(公告)日：2011-07-05

申请号：US12338308

申请日：2008-12-18

申请人： Hyun-Suk Kim ,  Sun-Il Shim ,  Chang-Seok Kang ,  Won-Cheol Jeong ,  Jung-Dal Choi ,  Jae-Kwan Park ,  Seung-Hyun Lim ,  Sun-Jung Kim

发明人： Hyun-Suk Kim ,  Sun-Il Shim ,  Chang-Seok Kang ,  Won-Cheol Jeong ,  Jung-Dal Choi ,  Jae-Kwan Park ,  Seung-Hyun Lim ,  Sun-Jung Kim

IPC分类号： H01L29/66

CPC分类号： H01L21/28282 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/7881 ,  H01L29/792

摘要： Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well.

摘要翻译： 提供了非易失性存储器件，其包括在衬底上的控制栅电极; 在控制栅电极和衬底之间的电荷存储绝缘层; 在电荷存储绝缘层和衬底之间的隧道绝缘层; 电荷存储绝缘层和控制栅电极之间的阻挡绝缘层; 以及隧道绝缘层和阻挡绝缘层之间的材料层，材料层具有构成势阱底部的能级。

公开(公告)号：US07419888B2

公开(公告)日：2008-09-02

申请号：US11494451

申请日：2006-07-28

申请人： Sang-Ryol Yang ,  Kyong-Hee Joo ,  In-Seok Yeo ,  Ki-Hyun Hwang ,  Seung-Hyun Lim

发明人： Sang-Ryol Yang ,  Kyong-Hee Joo ,  In-Seok Yeo ,  Ki-Hyun Hwang ,  Seung-Hyun Lim

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02164 ,  B82Y10/00 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45529 ,  H01L21/0214 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/28273 ,  H01L21/3141 ,  H01L21/32055 ,  H01L29/42328 ,  Y10S438/962

摘要： In a method of forming a silicon-rich nanocrystalline structure by an ALD process, a first gas including a first silicon compound is provided onto an object to form a silicon-rich chemisorption layer on the object. A second gas including oxygen is provided onto the silicon-rich chemisorption layer to form a silicon-rich insulation layer on the object. A third gas including a second silicon compound is provided onto the silicon-rich insulation layer to form a silicon nanocrystalline layer on the silicon-rich insulation layer. The first gas, the second gas and the third gas may be repeatedly provided to alternately form the silicon-rich nanocrystalline structure having a plurality of silicon-rich insulation layers and a plurality of silicon nanocrystalline layers on the object.

摘要翻译： 在通过ALD工艺形成富含硅的纳米晶体结构的方法中，将包含第一硅化合物的第一气体提供到物体上以在物体上形成富含硅的化学吸附层。 在富含硅的化学吸附层上提供包含氧的第二气体，以在物体上形成富含硅的绝缘层。 在富硅绝缘层上提供包括第二硅化合物的第三气体，以在富硅绝缘层上形成硅纳米晶层。 可以重复地提供第一气体，第二气体和第三气体以交替地形成在物体上具有多个富硅绝缘层和多个硅纳米晶层的富含硅的纳米晶体结构。

公开(公告)号：US20080094140A1

公开(公告)日：2008-04-24

申请号：US11975018

申请日：2007-10-17

申请人： Seung-Hyun Lim ,  Jeong-Hwan Lee ,  Gun-Hee Han ,  Seog-Heon Ham

发明人： Seung-Hyun Lim ,  Jeong-Hwan Lee ,  Gun-Hee Han ,  Seog-Heon Ham

IPC分类号： H03F3/189

CPC分类号： H03F3/005 ,  H03F3/45475 ,  H03F2203/45514 ,  H03F2203/45551

摘要： A ratio-independent switched capacitor amplifier includes a first sampling circuit configured to sample a first input voltage as a first sampling voltage and to double a level of the first sampling voltage during an interval in which the first input voltage is cut off; a second sampling circuit configured to sample a second input voltage as a second sampling voltage and to double a level of the second sampling voltage during an interval in which the second input voltage is cut off; and a differential amplifier circuit configured to output a difference between the first sampling voltage and the second sampling voltage.

摘要翻译： 比率无关的开关电容放大器包括：第一采样电路，被配置为将第一输入电压作为第一采样电压进行采样，并在第一输入电压被切断的间隔期间使第一采样电压的电平加倍; 第二采样电路，被配置为将第二输入电压作为第二采样电压进行采样，并且在所述第二输入电压被切断的间隔期间将所述第二采样电压的电平加倍; 以及差分放大电路，被配置为输出第一采样电压和第二采样电压之间的差。

公开(公告)号：US07148106B2

公开(公告)日：2006-12-12

申请号：US11023993

申请日：2004-12-28

申请人： Kyong-Hee Joo ,  Jin-Ho Park ,  In-Seok Yeo ,  Seung-Hyun Lim

发明人： Kyong-Hee Joo ,  Jin-Ho Park ,  In-Seok Yeo ,  Seung-Hyun Lim

IPC分类号： H01L21/336

CPC分类号： H01L21/0228 ,  B82Y10/00 ,  H01L21/02123 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/28273 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31608 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/42332

摘要： Non-volatile memory devices can be fabricated by forming a tunnel dielectric layer on a semiconductor substrate, subjecting the semiconductor substrate having the tunnel dielectric layer to an atomic layer deposition (ALD) process to form nanocrystals on the tunnel dielectric layer, removing the semiconductor substrate having the nanocrystals from an atomic layer deposition chamber, forming a control gate dielectric layer on the semiconductor substrate having the nanocrystal, and forming a control gate electrode on the semiconductor substrate having the control gate dielectric layer.

摘要翻译： 可以通过在半导体衬底上形成隧道介电层来制造非易失性存储器件，对具有隧道介电层的半导体衬底进行原子层沉积（ALD）工艺以在隧道介电层上形成纳米晶体，去除半导体衬底 具有来自原子层沉积室的纳米晶体，在具有纳米晶体的半导体衬底上形成控制栅极电介质层，并在具有控制栅极电介质层的半导体衬底上形成控制栅电极。

公开(公告)号：US20060046384A1

公开(公告)日：2006-03-02

申请号：US11023993

申请日：2004-12-28

申请人： Kyong-Hee Joo ,  Jin-Ho Park ,  In-Seok Yeo ,  Seung-Hyun Lim

发明人： Kyong-Hee Joo ,  Jin-Ho Park ,  In-Seok Yeo ,  Seung-Hyun Lim

IPC分类号： H01L21/336 ,  H01L21/31

CPC分类号： H01L21/0228 ,  B82Y10/00 ,  H01L21/02123 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/28273 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31608 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/42332

摘要： Non-volatile memory devices can be fabricated by forming a tunnel dielectric layer on a semiconductor substrate, subjecting the semiconductor substrate having the tunnel dielectric layer to an atomic layer deposition (ALD) process to form nanocrystals on the tunnel dielectric layer, removing the semiconductor substrate having the nanocrystals from an atomic layer deposition chamber, forming a control gate dielectric layer on the semiconductor substrate having the nanocrystal, and forming a control gate electrode on the semiconductor substrate having the control gate dielectric layer.