公开(公告)号：US07972441B2

公开(公告)日：2011-07-05

申请号：US11099082

申请日：2005-04-05

Applicant: Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

Inventor： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

IPC: C23C16/40 ,  H01L21/31

CPC classification number: H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

Abstract translation: 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。 该室被保持在低于20托的低压，并且衬底有利地保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。

公开(公告)号：US07923660B2

公开(公告)日：2011-04-12

申请号：US11839436

申请日：2007-08-15

Applicant: Alexander N. Lerner ,  Timothy N. Thomas ,  Sundar Ramamurthy

Inventor： Alexander N. Lerner ,  Timothy N. Thomas ,  Sundar Ramamurthy

IPC: B23K9/00 ,  H05B3/68 ,  H01L21/20 ,  H01L21/336

CPC classification number: H01L21/67109 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67745 ,  H01L21/67748

Abstract: Disclosed is the method and apparatus for annealing semiconductor substrates. One embodiment provides a semiconductor processing chamber comprising a first substrate support configured to support a substrate, a second substrate support configured to support a substrate, a shuttle coupled to the first substrate support and configured to move the first substrate support between a processing zone and a first loading zone, wherein the processing zone having a processing volume configured to alternately accommodating the first substrate support and the second substrate support.

Abstract translation: 公开了半导体衬底退火的方法和装置。 一个实施例提供一种半导体处理室，其包括被配置为支撑基板的第一基板支撑件，被配置为支撑基板的第二基板支撑件，耦合到第一基板支撑件的梭子，并且被配置成在处理区域和 第一加载区，其中所述处理区具有被配置为交替地容纳所述第一基板支撑件和所述第二基板支撑件的处理空间。

公开(公告)号：US20100065547A1

公开(公告)日：2010-03-18

申请号：US12212214

申请日：2008-09-17

Applicant: STEPHEN MOFFATT ,  Abhilash J. Mayur ,  Sundar Ramamurthy ,  Joseph Ranish ,  Aaron Hunter

Inventor： STEPHEN MOFFATT ,  Abhilash J. Mayur ,  Sundar Ramamurthy ,  Joseph Ranish ,  Aaron Hunter

IPC: H05B3/02

CPC classification number: H01L21/67109 ,  H01L21/67115

Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

公开(公告)号：US20090010626A1

公开(公告)日：2009-01-08

申请号：US12212487

申请日：2008-09-17

Applicant: SUNDAR RAMAMURTHY ,  Andreas G. Hegedus ,  Randhir Thakur

Inventor： SUNDAR RAMAMURTHY ,  Andreas G. Hegedus ,  Randhir Thakur

IPC: A21B2/00

CPC classification number: H01L21/67103

Abstract: A method of adjusting the heat transfer properties within a processing chamber is presented. Chamber properties may be determined and adjusted by adjusting the thermal mass of an edge ring disposed in the processing chamber.

Abstract translation: 提出了一种在处理室内调节传热特性的方法。 可以通过调节设置在处理室中的边缘环的热质量来确定和调整室特性。

公开(公告)号：US07414224B2

公开(公告)日：2008-08-19

申请号：US11610759

申请日：2006-12-14

Applicant: Wolfgang Aderhold ,  Sundar Ramamurthy ,  Aaron Hunter

Inventor： Wolfgang Aderhold ,  Sundar Ramamurthy ,  Aaron Hunter

IPC: F27B5/14 ,  A21B2/00

CPC classification number: H01L21/67115 ,  F27B17/0025 ,  F27D19/00 ,  F27D21/0014

Abstract: Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector.

Abstract translation: 公开了诸如快速热处理（RTP）装置和方法的晶片或其它基板的热处理的装置和方法。 辐射灯阵列将辐射引导到晶片的背面以加热晶片。 在一个或多个实施例中，其上形成图案化集成电路的晶片的正面面向辐射反射器。 在一个或多个实施例中，从反射器一侧热温度地监测晶片的温度和反射率。

公开(公告)号：US20080090309A1

公开(公告)日：2008-04-17

申请号：US11751027

申请日：2007-05-20

Applicant: JOSEPH RANISH ,  Balasubramanian Ramachandran ,  Ravi Jallepally ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Brian Haas ,  Aaron Hunter ,  Wolfgang Aderhold

Inventor： JOSEPH RANISH ,  Balasubramanian Ramachandran ,  Ravi Jallepally ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Brian Haas ,  Aaron Hunter ,  Wolfgang Aderhold

IPC: H01L21/324

CPC classification number: H01L21/67248 ,  H01L21/324 ,  H01L21/67115

Abstract: A method for rapid thermal annealing is disclosed. As the substrate is inserted into an annealing chamber, it begins to heat due to the heat radiating from chamber components that were heated when a previous substrate was annealed. Thus, the leading edge of the substrate may be at an elevated temperature while the trailing edge of the substrate may be at room temperature while the substrate is inserted causing a temperature gradient is present across the substrate. Once the substrate is completely inserted into the annealing chamber, the temperature gradient may still be present. By compensating for the temperature gradient across the substrate, the substrate may be annealed uniformly.

Abstract translation: 公开了一种快速热退火的方法。 当衬底被插入退火室时，由于从先前的衬底退火时被加热的腔室部件散发的热量开始加热。 因此，衬底的前缘可能处于升高的温度，而衬底的后缘可能在室温下而衬底被插入，导致衬底上存在温度梯度。 一旦基板完全插入退火室，温度梯度可能仍然存在。 通过补偿跨越衬底的温度梯度，衬底可以均匀退火。

公开(公告)号：US20070026693A1

公开(公告)日：2007-02-01

申请号：US11530375

申请日：2006-09-08

Applicant: Yoshitaka YOKOTA ,  Sundar RAMAMURTHY ,  Vedapuram ACHUTHARAMAN ,  Cory CZARNIK ,  Mehran BEHDJAT ,  Christopher OLSEN

Inventor： Yoshitaka YOKOTA ,  Sundar RAMAMURTHY ,  Vedapuram ACHUTHARAMAN ,  Cory CZARNIK ,  Mehran BEHDJAT ,  Christopher OLSEN

IPC: H01L21/00

CPC classification number: H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Toir and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

Abstract translation: 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体例如氢气以提高氧化速率，稀释气体如氮气或O 2 O 2通过另一入口进入腔室。 该室被保持在低于20℃的低压下，衬底有利地保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中进行， 座。

公开(公告)号：US20060223315A1

公开(公告)日：2006-10-05

申请号：US11099082

申请日：2005-04-05

Applicant: Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

Inventor： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

IPC: H01L21/302 ,  C23C16/00

CPC classification number: H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

Abstract translation: 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体例如氢气以提高氧化速率，稀释气体如氮气或O 2 O 2通过另一入口进入腔室。 该室保持在低于20托的低压，并且有利地将基底保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。