Data storage device using magnetic domain wall movement and method of operating the same
    41.
    发明授权
    Data storage device using magnetic domain wall movement and method of operating the same 有权
    使用磁畴壁运动的数据存储装置及其操作方法

    公开(公告)号:US07961491B2

    公开(公告)日:2011-06-14

    申请号:US11730121

    申请日:2007-03-29

    CPC classification number: G11C11/14 G11C19/0808 Y10S977/933 Y10S977/935

    Abstract: Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer which has a plurality of magnetic domains, a current applying unit which applies current for a magnetic domain wall movement to the magnetic layer, and a head for reading and writing, wherein the magnetic layer comprises a plurality of perpendicular magnetic layers formed on a substrate in a plurality of rows and columns, and a horizontal magnetic layer formed on the perpendicular magnetic layers to connect the perpendicular magnetic layers.

    Abstract translation: 提供了使用磁畴壁移动的数据存储装置和操作数据存储装置的方法。 该数据存储装置包括具有多个磁畴的磁性层,向磁性层施加用于磁畴壁运动的电流的电流施加单元和用于读取和写入的磁头,其中该磁性层包括多个 在多个行和列中的基板上形成的垂直磁性层,以及形成在垂直磁性层上以连接垂直磁性层的水平磁性层。

    Data storage device using magnetic domain wall movement and method of operating the same
    42.
    发明授权
    Data storage device using magnetic domain wall movement and method of operating the same 有权
    使用磁畴壁运动的数据存储装置及其操作方法

    公开(公告)号:US07952905B2

    公开(公告)日:2011-05-31

    申请号:US11764432

    申请日:2007-06-18

    CPC classification number: G11C11/15 G11C19/0808 G11C19/0841

    Abstract: Provided are a data storage device using magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a first magnetic layer for writing data having two magnetic domains magnetized in opposite directions to each other and a second magnetic layer for storing data formed on at least one side of the first magnetic layer. The data storage device may further include a data recording device connected to both ends of the first magnetic layer and the end of the second magnetic layer which is not adjacent to the first magnetic layer, a read head formed a predetermined distance from the end of the second magnetic layer which is not adjacent to the first magnetic layer, and a current detector connected to the read head and the data recording device.

    Abstract translation: 提供了使用磁畴壁移动的数据存储装置和操作数据存储装置的方法。 数据存储装置包括用于写入具有彼此相反方向磁化的两个磁畴的数据的第一磁性层和用于存储形成在第一磁性层的至少一侧上的数据的第二磁性层。 数据存储装置还可以包括连接到第一磁性层的两端和不与第一磁性层相邻的第二磁性层的端部的数据记录装置,从头部的端部形成预定距离的读取头 与第一磁性层不相邻的第二磁性层和连接到读取头和数据记录装置的电流检测器。

    Dual-side imprinting lithography system
    44.
    发明授权
    Dual-side imprinting lithography system 有权
    双面压印光刻系统

    公开(公告)号:US07798802B2

    公开(公告)日:2010-09-21

    申请号:US12035702

    申请日:2008-02-22

    CPC classification number: G03F7/0002 B82Y10/00 B82Y40/00

    Abstract: Provided is a dual-side imprinting lithography system that includes a medium supporting unit that supports a medium wherein both surfaces of the medium are coated with a ultraviolet (UV) hardening resin; a first mold supporting unit and a second mold supporting unit that respectively support a first mold and a second mold, disposed respectively above the medium supporting unit and under the medium supporting unit; a vertical moving device that moves vertically at least one of the medium supporting unit, the first mold supporting unit, and the second mold supporting unit; a first UV radiating device that is installed above the first mold supporting unit to radiate UV rays; and a second UV radiating device that is installed under the second mold supporting unit to radiate UV rays.

    Abstract translation: 提供了一种双面压印光刻系统,其包括支撑介质的介质支撑单元,其中介质的两个表面都涂覆有紫外线(UV)硬化树脂; 第一模具支撑单元和第二模具支撑单元,其分别支撑分别位于介质支撑单元的上方和介质支撑单元下方的第一模具和第二模具; 垂直移动装置,其垂直移动介质支撑单元,第一模具支撑单元和第二模具支撑单元中的至少一个; 第一UV辐射装置,其安装在第一模具支撑单元上方以辐射紫外线; 以及第二UV辐射装置,其安装在所述第二模具支撑单元的下方以辐射紫外线。

    Semiconductor memory device and magneto-logic circuit
    45.
    发明授权
    Semiconductor memory device and magneto-logic circuit 有权
    半导体存储器件和磁逻辑电路

    公开(公告)号:US07755930B2

    公开(公告)日:2010-07-13

    申请号:US11976007

    申请日:2007-10-19

    CPC classification number: G11C11/1657 G11C11/1659 G11C11/1675 Y10S977/935

    Abstract: Provided are a semiconductor memory device and a magneto-logic circuit which change the direction of a magnetically induced current according to a logical combination of logic states of a plurality of input values. The semiconductor memory device comprises a current driving circuit, a magnetic induction layer, and a resistance-variable element. The current driving circuit receives a plurality of input values and changes the direction of a magnetically induced current according to a logical combination of logic states of the input values. The magnetic induction layer induces magnetism having a direction varying according to the direction of the magnetically induced current. The resistance-variable element has a resistance varying according to the direction of the magnetism induced by the magnetic induction layer.

    Abstract translation: 提供了根据多个输入值的逻辑状态的逻辑组合来改变磁感应电流的方向的半导体存储器件和磁电逻辑电路。 半导体存储器件包括电流驱动电路,磁感应层和电阻可变元件。 电流驱动电路根据输入值的逻辑状态的逻辑组合接收多个输入值并改变磁感应电流的方向。 磁感应层诱导具有根据磁感应电流的方向变化的方向的磁性。 电阻可变元件具有根据由磁感应层感应的磁性方向而变化的电阻。

    MEMS device package and method of manufacturing the same
    46.
    发明授权
    MEMS device package and method of manufacturing the same 有权
    MEMS器件封装及其制造方法

    公开(公告)号:US07719742B2

    公开(公告)日:2010-05-18

    申请号:US11368626

    申请日:2006-03-07

    CPC classification number: B81B7/0051 B81B7/007

    Abstract: A MEMS device package and a method of manufacturing the same. The MEMS device package includes a device substrate having a surface on which a MEMS active device is formed, and multiple sealing pads arranged around the MEMS active device so that the sealing pads provide electric paths for the MEMS active device. In addition, the MEMS device package may include a cap substrate bonded to the device substrate through the multiple sealing pads, the cap substrate including a trench, within which the MEMS active device is positioned, and via holes. One or more outer electrode pads may be formed on one surface of the cap substrate to be electrically connected with the multiple sealing pads through the via holes. Because there are several bonding and sealing areas between the device substrate and the cap substrate, the sealing intensity is strengthened.

    Abstract translation: 一种MEMS器件封装及其制造方法。 MEMS器件封装包括具有其上形成有MEMS器件的表面的器件衬底以及围绕MEMS有源器件布置的多个密封焊盘,使得密封垫为MEMS有源器件提供电路径。 此外,MEMS器件封装可以包括通过多个密封焊盘结合到器件衬底的帽衬底,帽衬底包括其中定位MEMS有源器件的沟槽和通孔。 可以在盖基板的一个表面上形成一个或多个外电极焊盘,以通过通孔与多个密封垫电连接。 由于在器件基板和盖基板之间存在多个接合和密封区域,所以密封强度得以加强。

    MAGNETIC RECORDING MEDIUM AND METHOD OF FABRICATING THE SAME
    47.
    发明申请
    MAGNETIC RECORDING MEDIUM AND METHOD OF FABRICATING THE SAME 失效
    磁记录介质及其制造方法

    公开(公告)号:US20090002875A1

    公开(公告)日:2009-01-01

    申请号:US12018430

    申请日:2008-01-23

    CPC classification number: G11B5/59655 G11B5/59688

    Abstract: A magnetic recording medium and a method of fabricating the same are provided. The magnetic recording medium in which a position for magnetic recording is patterned with a magnetic material, includes a magnetic recording layer which includes a data area having a plurality of data tracks, and a servo area having a servo burst for following the data tracks, wherein the servo burst includes a plurality of bursts disposed in a zigzag structure along a downtrack direction, and each of the bursts includes a plurality of burst pieces having different coercivities from each other. The magnetic recording medium is subjected to two servo-recording processes, so that a signal similar to an alternative signal written in a burst having a burst pattern used in a related art continuous medium can be obtained.

    Abstract translation: 提供了一种磁记录介质及其制造方法。 其中用磁性材料构图磁记录位置的磁记录介质包括磁记录层,该磁记录层包括具有多个数据磁道的数据区,以及具有用于跟随数据磁道的伺服脉冲串的伺服区,其中 伺服脉冲串包括沿着下行方向以锯齿形结构设置的多个脉冲串,并且每个脉冲串包括彼此具有不同矫顽力的多个脉冲片。 对磁记录介质进行两次伺服记录处理,从而可以获得类似于在现有技术的连续介质中使用的具有突发图案的突发中写入的备选信号的信号。

    Magnetic domain data storage devices and methods of operating the same
    49.
    发明申请
    Magnetic domain data storage devices and methods of operating the same 有权
    磁畴数据存储设备及其操作方法

    公开(公告)号:US20080138659A1

    公开(公告)日:2008-06-12

    申请号:US11980418

    申请日:2007-10-31

    Abstract: Example embodiments may provide data storage devices using movement of a magnetic domain wall and/or a method of operating magnetic domain data storage devices. The data storage device may include a first magnetic layer for writing data having two magnetic domains magnetized in different directions, a second magnetic layer for storing data at a side of the first magnetic layer, a data recording device connected to the first magnetic layer and the second magnetic layer, and a plurality of reading heads configured to read the second magnetic layer. The data storage device may store a larger amount of data without requiring moving mechanical systems.

    Abstract translation: 示例性实施例可以使用磁畴壁的移动和/或操作磁畴数据存储设备的方法来提供数据存储设备。 数据存储装置可以包括用于写入具有不同方向磁化的两个磁畴的数据的第一磁性层,用于在第一磁性层的一侧存储数据的第二磁性层,连接到第一磁性层的数据记录装置和 第二磁性层和被配置为读取第二磁性层的多个读取头。 数据存储设备可以存储更大量的数据,而不需要移动机械系统。

    Multi-stack memory device
    50.
    发明申请
    Multi-stack memory device 有权
    多堆存储器件

    公开(公告)号:US20080137389A1

    公开(公告)日:2008-06-12

    申请号:US11978583

    申请日:2007-10-30

    Abstract: Provided is a multi-stack memory device that includes a storage unit group including a plurality of storage units that are vertically stacked and form a plurality of storage unit rows, and a plurality of transistors connected to the storage unit group, wherein the transistors that are connected to the storage units which are included in at least two rows of the plurality of the storage unit rows and are connected by a common wire. The common wire may be a gate line or a bit line.

    Abstract translation: 本发明提供一种多层存储装置,其特征在于,包括具有垂直堆叠的多个存储单元和多个存储单元行的存储单元组,以及与所述存储单元组连接的多个晶体管,其中, 连接到包含在多个存储单元行中的至少两行的存储单元,并通过公共线连接。 公共线可以是栅极线或位线。

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