Abstract:
Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer which has a plurality of magnetic domains, a current applying unit which applies current for a magnetic domain wall movement to the magnetic layer, and a head for reading and writing, wherein the magnetic layer comprises a plurality of perpendicular magnetic layers formed on a substrate in a plurality of rows and columns, and a horizontal magnetic layer formed on the perpendicular magnetic layers to connect the perpendicular magnetic layers.
Abstract:
Provided are a data storage device using magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a first magnetic layer for writing data having two magnetic domains magnetized in opposite directions to each other and a second magnetic layer for storing data formed on at least one side of the first magnetic layer. The data storage device may further include a data recording device connected to both ends of the first magnetic layer and the end of the second magnetic layer which is not adjacent to the first magnetic layer, a read head formed a predetermined distance from the end of the second magnetic layer which is not adjacent to the first magnetic layer, and a current detector connected to the read head and the data recording device.
Abstract:
A metallic wave guide and a light delivery module are provided. The metallic waveguide includes a metal body formed of a conductive metal and having an aperture formed therethrough, the aperture having input and output ends. The aperture has a bent portion for changing a light traveling direction between the input and output ends, and a tapered portion between the bent portion and the output end. The tapered portion has a width that is gradually reduced toward the output end, and the aperture is formed in a C-shape by a ridge formed on an inner surface of the metal body.
Abstract:
Provided is a dual-side imprinting lithography system that includes a medium supporting unit that supports a medium wherein both surfaces of the medium are coated with a ultraviolet (UV) hardening resin; a first mold supporting unit and a second mold supporting unit that respectively support a first mold and a second mold, disposed respectively above the medium supporting unit and under the medium supporting unit; a vertical moving device that moves vertically at least one of the medium supporting unit, the first mold supporting unit, and the second mold supporting unit; a first UV radiating device that is installed above the first mold supporting unit to radiate UV rays; and a second UV radiating device that is installed under the second mold supporting unit to radiate UV rays.
Abstract:
Provided are a semiconductor memory device and a magneto-logic circuit which change the direction of a magnetically induced current according to a logical combination of logic states of a plurality of input values. The semiconductor memory device comprises a current driving circuit, a magnetic induction layer, and a resistance-variable element. The current driving circuit receives a plurality of input values and changes the direction of a magnetically induced current according to a logical combination of logic states of the input values. The magnetic induction layer induces magnetism having a direction varying according to the direction of the magnetically induced current. The resistance-variable element has a resistance varying according to the direction of the magnetism induced by the magnetic induction layer.
Abstract:
A MEMS device package and a method of manufacturing the same. The MEMS device package includes a device substrate having a surface on which a MEMS active device is formed, and multiple sealing pads arranged around the MEMS active device so that the sealing pads provide electric paths for the MEMS active device. In addition, the MEMS device package may include a cap substrate bonded to the device substrate through the multiple sealing pads, the cap substrate including a trench, within which the MEMS active device is positioned, and via holes. One or more outer electrode pads may be formed on one surface of the cap substrate to be electrically connected with the multiple sealing pads through the via holes. Because there are several bonding and sealing areas between the device substrate and the cap substrate, the sealing intensity is strengthened.
Abstract:
A magnetic recording medium and a method of fabricating the same are provided. The magnetic recording medium in which a position for magnetic recording is patterned with a magnetic material, includes a magnetic recording layer which includes a data area having a plurality of data tracks, and a servo area having a servo burst for following the data tracks, wherein the servo burst includes a plurality of bursts disposed in a zigzag structure along a downtrack direction, and each of the bursts includes a plurality of burst pieces having different coercivities from each other. The magnetic recording medium is subjected to two servo-recording processes, so that a signal similar to an alternative signal written in a burst having a burst pattern used in a related art continuous medium can be obtained.
Abstract:
A ferroelectric hard disk device is provided and includes: a ferroelectric media having a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head formed above the ferroelectric media, the head being operative to write and reproduce information on the ferroelectric layer.
Abstract:
Example embodiments may provide data storage devices using movement of a magnetic domain wall and/or a method of operating magnetic domain data storage devices. The data storage device may include a first magnetic layer for writing data having two magnetic domains magnetized in different directions, a second magnetic layer for storing data at a side of the first magnetic layer, a data recording device connected to the first magnetic layer and the second magnetic layer, and a plurality of reading heads configured to read the second magnetic layer. The data storage device may store a larger amount of data without requiring moving mechanical systems.
Abstract:
Provided is a multi-stack memory device that includes a storage unit group including a plurality of storage units that are vertically stacked and form a plurality of storage unit rows, and a plurality of transistors connected to the storage unit group, wherein the transistors that are connected to the storage units which are included in at least two rows of the plurality of the storage unit rows and are connected by a common wire. The common wire may be a gate line or a bit line.