公开(公告)号：US08751411B2

公开(公告)日：2014-06-10

申请号：US12246956

申请日：2008-10-07

Applicant: Ramesh Nagarajan ,  Xing Lin

Inventor： Ramesh Nagarajan ,  Xing Lin

IPC: G06F17/00 ,  G06G7/00 ,  G06Q10/00 ,  G06Q30/00

CPC classification number: G06Q30/04 ,  G06Q10/0875

Abstract: Disclosed herein is a method and system for determining a billing structure for outputting documents using an image processing apparatus. If image data of the document includes color pixels, a billing structure is determined based on an estimated total color pixel count. The color pixels of the image data are counted in a device independent space and the total color pixel count of the image data to be output in a device dependent space is estimated. Based on the estimation, a billing structure is chosen. Processing and determining a billing structure based on image data in the device independent space avoids charging a customer for color print job when only a small amount of color pixels are printed. It also encourages determining charges independently of the marking engine or output device.

Abstract translation: 本文公开了一种用于确定使用图像处理装置输出文档的计费结构的方法和系统。 如果文档的图像数据包括彩色像素，则基于估计的总彩色像素数确定计费结构。 图像数据的颜色像素被计数在与设备无关的空间中，并且估计要在设备依赖空间中输出的图像数据的总色彩像素数。 基于该估计，选择计费结构。 基于设备独立空间中的图像数据来处理和确定记帐结构避免了在仅打印少量彩色像素时对客户进行彩色打印作业的计费。 它还鼓励独立于标记引擎或输出设备确定费用。

公开(公告)号：US08492980B2

公开(公告)日：2013-07-23

申请号：US13090916

申请日：2011-04-20

Applicant: Samer Banna ,  Valentin N. Todorow ,  Tse-Chiang Wang ,  Xing Lin

Inventor： Samer Banna ,  Valentin N. Todorow ,  Tse-Chiang Wang ,  Xing Lin

IPC: H05B31/26

CPC classification number: H01J37/32174 ,  H01J37/321 ,  H01J37/32926 ,  H01J37/3299

Abstract: Methods for calibrating RF power applied to a plurality of RF coils are provided. In some embodiments, a method of calibrating RF power applied to a first and second RF coil of a process chamber having a power divider to control a first ratio equal to a first magnitude of RF power provided to the first RF coil divided by a second magnitude of RF power provided to the second RF coil, may include measuring a plurality of first ratios over a range of setpoint values of the power divider, comparing the plurality of measured first ratios to a plurality of reference first ratios, and adjusting an actual value of the power divider at a given setpoint value such that the first ratio of the power divider at the given setpoint matches the corresponding reference first ratio to within a first tolerance level.

Abstract translation: 提供了用于校准施加到多个RF线圈的RF功率的方法。 在一些实施例中，一种校准施加到具有功率分配器的处理室的第一和第二RF线圈的RF功率的方法，以控制提供给第一RF线圈的第一幅度等于第二幅度的第一比率 提供给第二RF线圈的RF功率可以包括在功率分配器的设定值的范围内测量多个第一比值，将多个测量的第一比值与多个参考第一比较，并且调整实际值 所述功率分配器在给定设定点值处，使得给定设定点处的功率分配器的第一比例与相应的参考第一比率匹配到第一容限水平内。

公开(公告)号：US20120104950A1

公开(公告)日：2012-05-03

申请号：US13090916

申请日：2011-04-20

Applicant: SAMER BANNA ,  VALENTIN N. TODOROW ,  TSE-CHIANG WANG ,  XING LIN

Inventor： SAMER BANNA ,  VALENTIN N. TODOROW ,  TSE-CHIANG WANG ,  XING LIN

IPC: H05B31/26

CPC classification number: H01J37/32174 ,  H01J37/321 ,  H01J37/32926 ,  H01J37/3299

Abstract: Methods for calibrating RF power applied to a plurality of RF coils are provided. In some embodiments, a method of calibrating RF power applied to a first and second RF coil of a process chamber having a power divider to control a first ratio equal to a first magnitude of RF power provided to the first RF coil divided by a second magnitude of RF power provided to the second RF coil, may include measuring a plurality of first ratios over a range of setpoint values of the power divider, comparing the plurality of measured first ratios to a plurality of reference first ratios, and adjusting an actual value of the power divider at a given setpoint value such that the first ratio of the power divider at the given setpoint matches the corresponding reference first ratio to within a first tolerance level.

Abstract translation: 提供了用于校准施加到多个RF线圈的RF功率的方法。 在一些实施例中，一种校准施加到具有功率分配器的处理室的第一和第二RF线圈的RF功率的方法，以控制提供给第一RF线圈的第一幅度等于第二幅度的第一比率 提供给第二RF线圈的RF功率可以包括在功率分配器的设定值的范围内测量多个第一比值，将多个测量的第一比值与多个参考第一比较，并且调整实际值 所述功率分配器在给定设定点值处，使得给定设定点处的功率分配器的第一比例与相应的参考第一比率匹配到第一容限水平内。

公开(公告)号：US07560365B2

公开(公告)日：2009-07-14

申请号：US11226679

申请日：2005-09-14

Applicant: Jia-Xing Lin ,  Chi-Lin Chen

Inventor： Jia-Xing Lin ,  Chi-Lin Chen

IPC: H01L21/36 ,  H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78645

Abstract: A method for fabricating a semiconductor device includes providing a substrate, forming an amorphous silicon layer over the substrate, forming a heat retaining layer on the amorphous silicon layer, patterning the heat retaining layer, and irradiating the patterned heat retaining layer.

Abstract translation: 一种制造半导体器件的方法包括提供衬底，在衬底上形成非晶硅层，在非晶硅层上形成保温层，图案化保温层，并照射图案化保温层。

公开(公告)号：US07435667B2

公开(公告)日：2008-10-14

申请号：US10772511

申请日：2004-02-05

Applicant: Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen ,  Yih-Rong Luo

Inventor： Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen ,  Yih-Rong Luo

IPC: H01L21/20

CPC classification number: H01L21/02686 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78603

Abstract: A heat sink layer is formed on portions of a substrate, and then an amorphous silicon layer is formed thereon. The heat coefficient of the sink layer is greater than that of the substrate. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer on the heat sink layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer on the substrate to form polysilicon having a crystal size of a micrometer.

Abstract translation: 在衬底的部分上形成散热层，然后在其上形成非晶硅层。 吸收层的热系数大于衬底的热系数。 当准分子激光器加热非晶硅层以使非晶硅结晶时，在散热层上的非晶硅层中形成成核位点。 接着，在基板上的非晶硅层发生横向膨胀结晶，形成晶体尺寸为微米的多晶硅。

公开(公告)号：US07410889B2

公开(公告)日：2008-08-12

申请号：US11393747

申请日：2006-03-31

Applicant: Yu-Cheng Chen ,  Jia-Xing Lin ,  Hung-Tse Chen

Inventor： Yu-Cheng Chen ,  Jia-Xing Lin ,  Hung-Tse Chen

IPC: H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L27/1281

Abstract: A silicon layer and a heat-retaining layer are formed on a substrate in turn, and a laser beam with a sharp energy density gradient is next utilized to perform a laser heating process for inducing super lateral growth crystallization occurred in part of the Si layer. The heat-retaining layer provides additional heating-enhancement function for the Si layer in crystallization so as to increase the super lateral growth length. Then, the laser beam is repeatedly moved to irradiate the substrate to finish the crystallization process for the full substrate.

Abstract translation: 依次在基板上形成硅层和保温层，接着利用具有尖锐的能量密度梯度的激光束进行激光加热处理，以引起部分Si层发生的超横向生长结晶。 保温层为结晶中的Si层提供额外的加热增强功能，以增加超横向生长长度。 然后，激光束被反复移动以照射基板，以完成整个基板的结晶处理。

公开(公告)号：US20080045042A1

公开(公告)日：2008-02-21

申请号：US11750577

申请日：2007-05-18

Applicant: Fang-Tsun Chu ,  Jia-Xing Lin

Inventor： Fang-Tsun Chu ,  Jia-Xing Lin

IPC: H01L21/428 ,  G03F1/00

CPC classification number: B23K26/066 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268

Abstract: A method for crystallizing an amorphous silicon layer is provided. (A) A substrate with an amorphous silicon layer thereon is provided. (B) A mask with a mask pattern is provided. The mask pattern includes a first region pattern and a second region pattern in mirror symmetry. (C) The first region pattern is selected as a first scanning region and the substrate is moved toward a first direction, such that a laser beam passes through the first region pattern to crystallize the amorphous silicon layer along the first direction. (D) The second region pattern is selected as a second scanning region and the substrate is moved toward a second direction, such that the laser beam passes through the second region pattern to crystallize the amorphous silicon layer along the second direction. (E) The steps of (C) and (D) are repeated to convert the whole amorphous silicon layer into a polysilicon layer.

Abstract translation: 提供了一种使非晶硅层结晶的方法。 （A）提供其上具有非晶硅层的基板。 （B）提供具有掩模图案的面具。 掩模图案包括第一区域图案和镜像对称的第二区域图案。 （C）第一区域图案被选择为第一扫描区域，并且基板朝向第一方向移动，使得激光束穿过第一区域图案以沿着第一方向结晶非晶硅层。 （D）第二区域图案被选择为第二扫描区域，并且基板朝向第二方向移动，使得激光束穿过第二区域图案以沿着第二方向结晶非晶硅层。 （E）重复（C）和（D）的步骤以将整个非晶硅层转化为多晶硅层。

公开(公告)号：US20070088479A1

公开(公告)日：2007-04-19

申请号：US11253969

申请日：2005-10-19

Applicant: Michael McCarthy ,  Xing Lin

Inventor： Michael McCarthy ,  Xing Lin

IPC: G06F17/00

CPC classification number: B60R21/0136 ,  B60R21/0132 ,  B60R2021/0006 ,  B60R2021/01027 ,  B60R2021/01088

Abstract: An apparatus (10) and method for sensing a vehicle crash condition includes a transponder (76a) responsive to interrogation signals for providing response signals and a transceiver (70a) for transmitting interrogation signals to the transponder (76a) and receiving response signals from the transponder (76a). The transponder (76a) is affixed to a first structure (36) of the vehicle (12) and the transceiver (70a) is affixed to a second structure (64) of the vehicle (12) at a location spaced apart from the first structure (36). A characteristic of the response signals changes in response to a vehicle crash condition that causes relative movement between the first and second structures (36 and 64). The apparatus (10) also includes a controller (34) for monitoring the received response signals to determine whether a vehicle crash condition is occurring.

Abstract translation: 用于感测车辆碰撞状况的装置（10）和方法包括响应于用于提供响应信号的询问信号的应答器（76a）和用于将询问信号发送到应答器（76a）并且接收响应信号的收发器（70a） 从应答器（76a）。 应答器（76a）被固定到车辆（12）的第一结构（36），并且收发器（70a）在与车辆（12）的间隔开的位置处固定到车辆（12）的第二结构（64） 第一结构（36）。 响应信号的特性响应于引起第一和第二结构（36和64）之间的相对运动的车辆碰撞状况而改变。 装置（10）还包括用于监测接收到的响应信号以确定车辆碰撞状况是否正在发生的控制器（34）。

公开(公告)号：US20060206247A1

公开(公告)日：2006-09-14

申请号：US11075681

申请日：2005-03-09

Applicant: Xing Lin

Inventor： Xing Lin

IPC: G01M17/00

CPC classification number: B60C23/0408 ,  B60C23/0413 ,  B60C23/0442 ,  B60C23/0462

Abstract: A tire parameter sensing system (12) for a vehicle (10) includes a vehicle-based unit (54) and a tire-based unit (34). The tire-based unit (34) is associated with a tire (16) and rotates with the tire. The tire-based unit (34) is located in a communication zone (190) for communicating with the vehicle-based unit (54) through only a portion of each rotation of the tire (16). The tire-based unit (34) senses at least one parameter of the tire (16) and transmits locator signals at predetermined intervals. The vehicle-based unit (54) receives a locator signal that is transmitted while the tire-based unit (34) is located in the communication zone (190) and, in response to receiving the locator signal, transmits a trigger signal to the tire-based unit (34). The tire-based unit (34) is responsive to receipt of the trigger signal for transmitting a parameter signal indicative of the sensed at least one parameter.

Abstract translation: 一种用于车辆（10）的轮胎参数检测系统（12）包括基于车辆的单元（54）和基于轮胎的单元（34）。 轮胎单元（34）与轮胎（16）相关联并与轮胎一起旋转。 基于轮胎的单元（34）位于通过仅轮胎（16）的每个旋转的一部分与车辆单元（54）通信的连通区域（190）中。 基于轮胎的单元（34）感测轮胎（16）的至少一个参数，并以预定间隔发送定位信号。 基于车辆的单元（54）接收在基于轮胎的单元（34）位于通信区域（190）中被发送的定位信号，并且响应于接收到定位信号，将触发信号发送到轮胎 （34）。 基于轮胎的单元（34）响应于接收到用于发送指示所感测的至少一个参数的参数信号的触发信号。

公开(公告)号：US20060172469A1

公开(公告)日：2006-08-03

申请号：US11312473

申请日：2005-12-21

Applicant: Jia-Xing Lin ,  Yu-Cheng Chen ,  Chi-Lin Chen

Inventor： Jia-Xing Lin ,  Yu-Cheng Chen ,  Chi-Lin Chen

IPC: H01L21/84 ,  H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

Abstract: An amorphous silicon (a-Si) layer is first formed on a substrate, and the a-Si layer is next patterned to form silicon islands for defining device active regions. Then, a single shot laser beam with long pulse is utilized to irradiate each silicon island, and lateral growth crystallization is induced in each silicon island for transforming a-Si into polycrystalline silicon (poly-Si). Finally, the general subsequent processes for thin film transistor (TFT) fabrication are performed in turn to fabricate poly-Si TFTs.

Abstract translation: 首先在衬底上形成非晶硅（a-Si）层，然后将a-Si层图案化以形成用于限定器件有源区的硅岛。 然后，利用具有长脉冲的单次激光束照射每个硅岛，并且在每个硅岛中诱导横向生长结晶以将a-Si转化为多晶硅（poly-Si）。 最后，依次进行薄膜晶体管（TFT）制造的一般后续处理以制造多晶硅TFT。