Organic Light-Emitting Diode Display With Bent Substrate
    41.
    发明申请
    Organic Light-Emitting Diode Display With Bent Substrate 有权
    具有弯曲基板的有机发光二极管显示器

    公开(公告)号:US20160204183A1

    公开(公告)日:2016-07-14

    申请号:US14860546

    申请日:2015-09-21

    Applicant: Apple Inc.

    Abstract: A display may have an array of organic light-emitting diodes that form an active area on a flexible substrate. Metal traces may extend between the active area and an inactive area of the flexible substrate. Display driver circuitry such as a display driver integrated circuit may be attached to a flexible printed circuit that is attached to the flexible substrate in the inactive area. The metal traces may extend across a bend region in the flexible substrate. The flexible substrate may be bent in the bend region. The flexible substrate may be locally thinned in the bend region. A neutral stress plane adjustment layer may cover the metal traces in the bend region. The neutral stress plane adjustment layer may include polymer layers such as an encapsulation layer, a pixel definition layer, a planarization layer, and a layer that covers a pixel definition layer and planarization layer.

    Abstract translation: 显示器可以具有在柔性基板上形成有源区域的有机发光二极管阵列。 金属迹线可以在有源区域和柔性基板的无效区域之间延伸。 诸如显示驱动器集成电路的显示器驱动器电路可以附接到在非活动区域中附接到柔性基板的柔性印刷电路。 金属迹线可以延伸穿过柔性基板中的弯曲区域。 柔性基板可以在弯曲区域中弯曲。 柔性基板可以在弯曲区域局部变薄。 中性应力平面调整层可以覆盖弯曲区域中的金属迹线。 中性应力平面调整层可以包括聚合物层,例如封装层,像素定义层,平坦化层和覆盖像素限定层和平坦化层的层。

    Organic Light-Emitting Diode Display With Double Gate Transistors
    42.
    发明申请
    Organic Light-Emitting Diode Display With Double Gate Transistors 有权
    具有双栅晶体管的有机发光二极管显示器

    公开(公告)号:US20160163745A1

    公开(公告)日:2016-06-09

    申请号:US14559618

    申请日:2014-12-03

    Applicant: Apple Inc.

    Abstract: An organic light-emitting diode display may have an array of pixels. Each pixel may have an organic light-emitting diode and thin-film transistor circuitry that controls current flow through the organic light-emitting diode. The thin-film transistor circuitry may include silicon thin-film transistors and semiconducting-oxide thin-film transistors. Double gate transistor structures may be formed in the transistors of the thin-film transistor circuitry. A double gate transistor may have a semiconductor layer sandwiched between first and second dielectric layers. The first dielectric layer may be interposed between an upper gate and the semiconductor layer and the second dielectric layer may be interposed between a lower gate and the semiconductor layer. Capacitor structures may be formed from the layers of metal used in forming the upper and lower gates and other conductive structures.

    Abstract translation: 有机发光二极管显示器可以具有像素阵列。 每个像素可以具有控制通过有机发光二极管的电流的有机发光二极管和薄膜晶体管电路。 薄膜晶体管电路可以包括硅薄膜晶体管和半导体氧化物薄膜晶体管。 双栅极晶体管结构可以形成在薄膜晶体管电路的晶体管中。 双栅极晶体管可以具有夹在第一和第二介电层之间的半导体层。 第一电介质层可以介于上栅极和半导体层之间,第二电介质层可以介于下栅极和半导体层之间。 电容器结构可以由用于形成上部栅极和下部栅极以及其它导电结构的金属层形成。

    Organic Light-Emitting Diode Display With Minimized Subpixel Crosstalk
    43.
    发明申请
    Organic Light-Emitting Diode Display With Minimized Subpixel Crosstalk 有权
    具有最小子像素串扰的有机发光二极管显示

    公开(公告)号:US20160125789A1

    公开(公告)日:2016-05-05

    申请号:US14875992

    申请日:2015-10-06

    Applicant: Apple Inc.

    Abstract: An organic light-emitting diode display may have an array of pixels. Each pixel may have multiple subpixels of different colors. To avoid undesired color shifts when operating the display, the display may be configured so that subpixels of different colors are not coupled to each other through parasitic capacitances. The subpixels may include red, green, and blue subpixels or subpixels of other colors. Each subpixel may include an organic light-emitting diode having an anode and a cathode. The anode of each organic light-emitting diode may be coupled to a respective storage capacitor. Capacitive coupling between subpixels can be minimized by configuring the subpixel structures of each pixel so that the storage capacitors of the subpixels do not overlap the anodes of other subpixels in the pixel. Anode and capacitor overlap with subpixel data lines may also be reduced or eliminated.

    Abstract translation: 有机发光二极管显示器可以具有像素阵列。 每个像素可以具有不同颜色的多个子像素。 为了在操作显示器时避免不期望的颜色偏移,可以配置显示器,使得不同颜色的子像素不通过寄生电容彼此耦合。 子像素可以包括其他颜色的红色,绿色和蓝色子像素或子像素。 每个子像素可以包括具有阳极和阴极的有机发光二极管。 每个有机发光二极管的阳极可以耦合到相应的存储电容器。 可以通过配置每个像素的子像素结构来使子像素之间的电容耦合最小化,使得子像素的存储电容器不与像素中的其它子像素的阳极重叠。 阳极和电容器与子像素数据线的重叠也可以减少或消除。

    Flexible Display With Bent Edge Regions
    44.
    发明申请
    Flexible Display With Bent Edge Regions 审中-公开
    带弯曲边缘区域的灵活显示

    公开(公告)号:US20160079281A1

    公开(公告)日:2016-03-17

    申请号:US14954805

    申请日:2015-11-30

    Applicant: Apple Inc.

    Abstract: An electronic device may have a flexible display with portions that are bent along a bend axis. The display may have display circuitry such as an array of display pixels in an active area. Contact pads may be formed in an inactive area of the display. Signal lines may couple the display pixels to the contact pads. The signal lines may overlap the bend axis in the inactive area of the display. During fabrication, an etch stop may be formed on the display that overlaps the bend axis. The etch stop may prevent over etching of dielectric such as a buffer layer on a polymer flexible display substrate. A layer of polymer that serves as a neutral stress plane adjustment layer may be formed over the signal lines in the inactive area of the display. Upon bending, the neutral stress plane adjustment layer helps prevent stress in the signal lines.

    Abstract translation: 电子设备可以具有柔性显示器,其具有沿着弯曲轴线弯曲的部分。 显示器可以具有诸如有源区域中的显示像素阵列的显示电路。 接触焊盘可以形成在显示器的无效区域中。 信号线可将显示像素耦合到接触垫。 信号线可能与显示器的非活动区域中的弯曲轴重叠。 在制造期间,可以在显示器上形成与弯曲轴线重叠的蚀刻停止。 蚀刻停止可以防止在聚合物柔性显示基板上的诸如缓冲层之类的电介质的过度蚀刻。 用作中性应力平面调整层的聚合物层可以形成在显示器的无效区域中的信号线上。 弯曲时,中性应力平面调整层有助于防止信号线中的应力。

    Flexible Displays with Strengthened Pad Area
    45.
    发明申请
    Flexible Displays with Strengthened Pad Area 有权
    灵活显示器加强垫区域

    公开(公告)号:US20150268775A1

    公开(公告)日:2015-09-24

    申请号:US14497086

    申请日:2014-09-25

    Applicant: Apple Inc.

    Abstract: An electronic device may have a flexible display with portions that can be bent. The display may include an array of display pixels in an active area. Contact pads may be formed in an inactive area of the display. Display circuitry in the active area may exhibit a given stack height, whereas display circuitry in the inactive area may exhibit a stack height that is less than the given stack height. In particular, the contact pads may be formed directly on a multi-buffer layer that sits directly on a flexible display substrate. Passivation material may be selectively formed only at the edges of the contact pad on the multi-buffer layer. The multi-buffer layer may be formed at a distance from the edge of the flexible display substrate to minimize cracking in the multi-buffer layer.

    Abstract translation: 电子设备可以具有可弯曲部分的柔性显示器。 显示器可以包括活动区域中的显示像素阵列。 接触焊盘可以形成在显示器的无效区域中。 有源区域中的显示电路可能呈现给定的堆叠高度,而非活动区域中的显示电路可能表现出小于给定堆叠高度的堆叠高度。 特别地,接触焊盘可以直接形成在直接位于柔性显示器基板上的多缓冲层上。 钝化材料可以仅选择性地形成在多缓冲层上的接触焊盘的边缘处。 多缓冲层可以形成在距离柔性显示基板的边缘一定距离处,以最小化多缓冲层中的裂纹。

    Gate insulator loss free etch-stop oxide thin film transistor
    46.
    发明授权
    Gate insulator loss free etch-stop oxide thin film transistor 有权
    栅极绝缘体无损蚀刻 - 停止氧化物薄膜晶体管

    公开(公告)号:US08823003B2

    公开(公告)日:2014-09-02

    申请号:US13629537

    申请日:2012-09-27

    Applicant: Apple Inc.

    Abstract: A method is provided for fabricating a thin-film transistor (TFT). The method includes forming a semiconductor layer over a gate insulator that covers a gate electrode, and depositing an insulator layer over the semiconductor layer, as well as etching the insulator layer to form a patterned etch-stop without losing the gate insulator. The method also includes forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop. The method further includes removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode.

    Abstract translation: 提供了制造薄膜晶体管(TFT)的方法。 该方法包括在覆盖栅电极的栅极绝缘体上形成半导体层,以及在半导体层上沉积绝缘体层,以及蚀刻绝缘体层以形成图案化蚀刻停止件,而不会失去栅极绝缘体。 该方法还包括在半导体层和图案化蚀刻停止物上形成源电极和漏电极。 该方法还包括:除了源电极和漏电极之外的半导体层的一部分,使得半导体层的剩余部分在源电极和栅电极的第一重叠区域和第二重叠区域中覆盖栅极绝缘体 的漏电极和栅电极。

    Electronic Device With Reduced-Stress Flexible Display
    47.
    发明申请
    Electronic Device With Reduced-Stress Flexible Display 有权
    具有低应力柔性显示器的电子设备

    公开(公告)号:US20140240985A1

    公开(公告)日:2014-08-28

    申请号:US13778932

    申请日:2013-02-27

    Applicant: APPLE INC.

    Abstract: An electronic device may have a flexible display. The display may have portions that are bent along a bend axis. The display may have display circuitry such as an array of display pixels in an active area and signal lines, thin-film transistor support circuitry and other display circuitry in an inactive area of the display surrounding the active area. The display circuitry may be formed on a substrate such as a flexible polymer substrate. The flexible polymer substrate may be formed by depositing polymer on a support structure that has raised portions.The raised portions may create locally thinned regions in the flexible polymer substrate. The reduced thickness of the flexible polymer substrate in the thinned regions may help ensure that a neutral stress plane that is associated with bending the display along the bend axis is aligned with the display circuitry, thereby minimizing stress in the display circuitry.

    Abstract translation: 电子设备可以具有灵活的显示器。 显示器可以具有沿着弯曲轴线弯曲的部分。 显示器可以具有诸如有源区域中的显示像素阵列和信号线,薄膜晶体管支持电路和围绕有源区域的显示器的非活动区域中的其他显示电路的显示电路。 显示电路可以形成在诸如柔性聚合物基底的基底上。 柔性聚合物基材可以通过将聚合物沉积在具有凸起部分的支撑结构上而形成。 凸起部分可以在柔性聚合物基底中产生局部变薄的区域。 柔性聚合物基材在减薄区域中的减小的厚度可以有助于确保与显示器沿着弯曲轴弯曲相关联的中性应力平面与显示电路对准,从而使显示电路中的应力最小化。

    Connection to First Metal Layer in Thin Film Transistor Process
    48.
    发明申请
    Connection to First Metal Layer in Thin Film Transistor Process 有权
    连接薄膜晶体管工艺中的第一金属层

    公开(公告)号:US20140084292A1

    公开(公告)日:2014-03-27

    申请号:US13629547

    申请日:2012-09-27

    Applicant: APPLE INC.

    Abstract: A method of connecting to a first metal layer in a semiconductor flow process. Disclosed embodiments connect to the first metal layer by etching a first portion of a viahole through an etch stop layer and a gate insulation layer to reach a first metal layer, depositing a second metal layer such that the second metal layer contacts the first metal layer within the viahole, and etching a second portion of the viahole through a first passivation layer and an organic layer to reach the second metal layer.

    Abstract translation: 一种在半导体流程中连接到第一金属层的方法。 公开的实施例通过蚀刻通孔的第一部分通过蚀刻停止层和栅极绝缘层连接到第一金属层,以到达第一金属层,沉积第二金属层,使得第二金属层与第一金属层接触, 所述通孔,并且通过第一钝化层和有机层蚀刻所述通孔的第二部分以到达所述第二金属层。

    Back Channel Etch Metal-Oxide Thin Film Transistor and Process
    49.
    发明申请
    Back Channel Etch Metal-Oxide Thin Film Transistor and Process 有权
    背沟道蚀刻金属氧化物薄膜晶体管和工艺

    公开(公告)号:US20130337596A1

    公开(公告)日:2013-12-19

    申请号:US13913373

    申请日:2013-06-07

    Applicant: Apple Inc.

    Abstract: A method is provided for fabricating an organic light emitting diode (OLED) display. The method includes forming a thin film transistor (TFT) substrate including a first metal layer and a second metal layer. The method also includes depositing a first passivation layer over the second metal layer, and forming a third metal layer over a channel region and a storage capacitor region. The third metal layer is configured to connect to a first portion of the second metal layer that is configured to connect to the first metal layer in a first through-hole through a gate insulator and the first passivation layer. The method further includes depositing a second passivation layer over the third metal layer, and forming an anode layer over the second passivation layer. The anode is configured to connect to a second portion of the third metal layer that is configured to connect to the second metal layer in a second through-hole of the first passivation layer and the second passivation layer.

    Abstract translation: 提供了一种用于制造有机发光二极管(OLED)显示器的方法。 该方法包括形成包括第一金属层和第二金属层的薄膜晶体管(TFT)基板。 该方法还包括在第二金属层上沉积第一钝化层,以及在沟道区域和存储电容器区域上形成第三金属层。 第三金属层被配置为连接到第二金属层的第一部分,其被构造成通过栅极绝缘体和第一钝化层在第一通孔中连接到第一金属层。 该方法还包括在第三金属层上沉积第二钝化层,以及在第二钝化层上形成阳极层。 阳极被配置为连接到第三金属层的第二部分,其被配置为在第一钝化层和第二钝化层的第二通孔中连接到第二金属层。

Patent Agency Ranking