公开(公告)号：US11768442B2

公开(公告)日：2023-09-26

申请号：US17973221

申请日：2022-10-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Koenraad Van Ingen Schenau ,  Patrick Warnaar ,  Abraham Slachter ,  Roy Anunciado ,  Simon Hendrik Celine Van Gorp ,  Frank Staals ,  Marinus Jochemsen

IPC: G06F30/20 ,  G06F30/33 ,  G06F30/398 ,  G03F7/00 ,  G03F1/00 ,  G06T7/00 ,  G21K5/00 ,  H01L21/00 ,  H01L21/66 ,  G06F119/18

CPC classification number: G03F7/70625 ,  G06F30/20 ,  G06T7/0004 ,  H01L22/20 ,  G03F1/00 ,  G06F30/33 ,  G06F30/398 ,  G06F2119/18 ,  G21K5/00 ,  H01L21/00

Abstract: A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature of a device being manufactured in a layer on the substrate; obtaining a layout of features associated with a previous layer adjacent to the layer on the substrate; calculating one or more image-related metrics in dependence on: 1) a contour determined from the image including the at least one feature and 2) the layout; and determining one or more control parameters of a lithographic apparatus and/or one or more further processes in a manufacturing process of the device in dependence on the one or more image-related metrics, wherein at least one of the control parameters is determined to modify the geometry of the contour in order to improve the one or more image-related metrics.

公开(公告)号：US11429029B2

公开(公告)日：2022-08-30

申请号：US17081325

申请日：2020-10-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Maurits Van Der Schaar ,  Patrick Warnaar ,  Youping Zhang ,  Arie Jeffrey Den Boef ,  Feng Xiao ,  Martin Ebert

IPC: G03F7/20 ,  G03F9/00

Abstract: A method includes projecting an illumination beam of radiation onto a metrology target on a substrate, detecting radiation reflected from the metrology target on the substrate, and determining a characteristic of a feature on the substrate based on the detected radiation, wherein a polarization state of the detected radiation is controllably selected to optimize a quality of the detected radiation.

公开(公告)号：US10996570B2

公开(公告)日：2021-05-04

申请号：US16594613

申请日：2019-10-07

Applicant: ASML Netherlands B.V.

Inventor： Zili Zhou ,  Nitesh Pandey ,  Olger Victor Zwier ,  Patrick Warnaar ,  Maurits Van Der Schaar ,  Elliott Gerard McNamara ,  Arie Jeffrey Den Boef ,  Paul Christiaan Hinnen ,  Murat Bozkurt ,  Joost Jeroen Ottens ,  Kaustuve Bhattacharyya ,  Michael Kubis

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F9/00

Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

公开(公告)号：US10739687B2

公开(公告)日：2020-08-11

申请号：US16185062

申请日：2018-11-09

Applicant: ASML Netherlands B.V.

Inventor： Hendrik Jan Hidde Smilde ,  Bastiaan Onne Fagginger Auer ,  Davit Harutyunyan ,  Patrick Warnaar

IPC: G03F7/20 ,  G03F9/00 ,  G01B9/04 ,  G01N21/88

Abstract: In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.

公开(公告)号：US10162271B2

公开(公告)日：2018-12-25

申请号：US15115229

申请日：2014-12-30

Applicant: ASML Netherlands B.V.

Inventor： Hendrik Jan Hidde Smilde ,  Bastiaan Onne Fagginger Auer ,  Davit Harutyunyan ,  Patrick Warnaar

IPC: G01B11/00 ,  G01B11/04 ,  G03B27/32 ,  G03B27/74 ,  G03F7/20 ,  G03F9/00 ,  G01B9/04 ,  G01N21/88

Abstract: In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.

公开(公告)号：US09946167B2

公开(公告)日：2018-04-17

申请号：US14824696

申请日：2015-08-12

Applicant: ASML Netherlands B.V.

Inventor： Hendrik Jan Hidde Smilde ,  Arno Jan Bleeker ,  Willem Marie Julia Marcel Coene ,  Patrick Warnaar ,  Michael Kubis

IPC: G01B11/00 ,  G03F7/20 ,  G06N99/00

CPC classification number: G03F7/70633 ,  G03F7/70483 ,  G03F7/70625 ,  G03F7/70641 ,  G06N99/005

Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.