公开(公告)号：US5376818A

公开(公告)日：1994-12-27

申请号：US168465

申请日：1993-12-16

Applicant: Anthony D. Kurtz

Inventor： Anthony D. Kurtz

IPC: H01L29/16 ,  H01L29/84 ,  H01L29/96

CPC classification number: H01L29/16 ,  H01L29/84 ,  Y10S438/96

Abstract: Stress sensitive P-N junction devices are fabricated by forming a porous layer in a semiconductor of a given conductivity, diffusing dopants of the opposite conductivity into the porous layer and forming a non-porous layer on the porous layer. This results in a microporous structure having a plurality of microcrystalline regions extending therethrough, which enhances the quantum confinement of energetic carriers and results in a device which is highly sensitive to stress.

Abstract translation: 通过在给定导电率的半导体中形成多孔层来制造应力敏感的P-N结器件，将具有相反导电性的掺杂剂扩散到多孔层中并在多孔层上形成无孔层。 这导致具有延伸穿过其中的多个微晶区域的微孔结构，这增强了高能载流子的量子限制并导致对应力高度敏感的装置。

公开(公告)号：US5376241A

公开(公告)日：1994-12-27

申请号：US159375

申请日：1993-11-30

Applicant: Joseph S. Shor ,  Anthony D. Kurtz

Inventor： Joseph S. Shor ,  Anthony D. Kurtz

IPC: H01L21/465 ,  H01L21/76 ,  H01L29/24 ,  H01L29/861 ,  H01L33/00 ,  H01L33/34 ,  C25F3/12

CPC classification number: H01L33/34 ,  H01L21/465 ,  H01L21/76 ,  H01L29/1608 ,  H01L29/861 ,  H01L33/0054 ,  Y10S438/96

Abstract: The formation of porous SiC occurs under electrochemical anodization. A sample of SiC is contacted electrically with nickel and placed into an electrochemical cell which cell includes a counter electrode and a reference electrode. The sample is encapsulated so that only a bare semiconductor surface is exposed. The electrochemical cell is filled with an HF electrolyte which dissolves the SiC electrochemically. A potential is applied to the semiconductor and UV light illuminates the surface of the semiconductor. By controlling the light intensity, the potential and the doping level, a porous layer is formed in the semiconductor and thus one produces porous SiC.

Abstract translation: 多孔SiC的形成发生在电化学阳极氧化下。 将SiC样品与镍电接触并置于电化学电池中，该电池包括对电极和参比电极。 样品被封装，使得只有裸露的半导体表面被暴露。 电化学电池填充有电化学溶解SiC的HF电解质。 对半导体施加电位，UV光照射半导体的表面。 通过控制光强度，电位和掺杂水平，在半导体中形成多孔层，从而产生多孔SiC。

公开(公告)号：US5286671A

公开(公告)日：1994-02-15

申请号：US58400

申请日：1993-05-07

Applicant: Anthony D. Kurtz ,  Alexander A. Ned

Inventor： Anthony D. Kurtz ,  Alexander A. Ned

IPC: H01L21/20 ,  H01L21/306

CPC classification number: H01L21/2007 ,  Y10S148/012

Abstract: A method of bonding a first silicon wafer to a second silicon wafer comprises the steps of diffusing a high conductivity pattern into a surface of a first semiconductor wafer, etching a portion of the surface to raise at least a portion of the pattern, providing a second semiconductor wafer having an insulating layer of a silicon compound disposed thereon, contacting the surface of the pattern to the insulating layer, and bonding the first and second semiconductor wafers at an elevated temperature.

Abstract translation: 将第一硅晶片接合到第二硅晶片的方法包括以下步骤：将高导电性图案扩散到第一半导体晶片的表面中，蚀刻表面的一部分以升高图案的至少一部分，从而提供第二硅晶片 半导体晶片具有设置在其上的硅化合物的绝缘层，与图案的表面接触绝缘层，并且在升高的温度下接合第一和第二半导体晶片。

公开(公告)号：US4860442A

公开(公告)日：1989-08-29

申请号：US276879

申请日：1988-11-28

Applicant: Roger W. Ainsworth ,  John L. Allen ,  Anthony D. Kurtz

Inventor： Roger W. Ainsworth ,  John L. Allen ,  Anthony D. Kurtz

IPC: G01D11/30 ,  G01L19/00 ,  H05K1/02 ,  H05K1/03 ,  H05K1/05 ,  H05K1/18

CPC classification number: H05K1/021 ,  G01D11/30 ,  G01L19/00 ,  H05K1/0306 ,  H05K1/053 ,  H05K1/182 ,  H05K2201/09745 ,  H05K2203/049 ,  Y10T29/49126 ,  Y10T29/4913

Abstract: There is disclosed a method of mounting a pressure transducer on a convoluted three-dimensional structure as for example a turbine blade. The method first forms a groove on a surface of a blade. The groove is formed at a given length and depth in order to accommodate a plurality of components. The groove is then filled with a ceramic material so that the top of the groove is aligned with the top surface of the structure. The entire structure is then coated with a first layer of a ceramic material which layer also covers the filled groove. Suitable conductors are then placed on the coated surface so that they span and overlie the groove. The structure is then coated with a second layer of ceramic material and the coating covers the conductors thereby serving to embed the conductors between the first and second layers. A second groove is then formed in the first and second layers which second groove overlies the first groove and which extends into the first groove. The formation of the second groove operates to separate or cut the conductors as overlying the first groove. Then ceramic material from the second layer is removed on each side of the second groove to expose the separated end surfaces of the conductors. The pressure transducer which is an integrated circuit is then placed into the second groove, and one now bonds the component terminals of the pressure transducer to the exposed conductor surfaces. In this manner both the wires leading from the transducer and the transducer itself are beneath the surface of the structure and do not interfere with the surface contours of the structure while further allowing testing of the same in all operating environments.

Abstract translation: 公开了一种将压力传感器安装在例如涡轮叶片的卷积三维结构上的方法。 该方法首先在叶片的表面上形成凹槽。 凹槽以给定的长度和深度形成，以便容纳多个部件。 然后用陶瓷材料填充凹槽，使得凹槽的顶部与结构的顶表面对齐。 然后将整个结构涂覆有第一层陶瓷材料，该层还覆盖填充的凹槽。 然后将合适的导体放置在涂覆的表面上，使得它们跨越并覆盖在凹槽上。 然后将该结构涂覆有第二层陶瓷材料，并且涂层覆盖导体，从而用于将导体嵌入第一和第二层之间。 然后在第一和第二层中形成第二凹槽，其中第二凹槽覆盖第一凹槽并且延伸到第一凹槽中。 第二凹槽的形成用于将导体分隔或切割成覆盖第一凹槽。 然后在第二槽的每一侧去除来自第二层的陶瓷材料，以露出导体的分开的端面。 然后将作为集成电路的压力传感器放置在第二槽中，然后将压力传感器的组件端子连接到暴露的导体表面。 以这种方式，从换能器和换能器本身引出的电线都在结构的表面下方，并且不会干扰结构的表面轮廓，同时还允许在所有操作环境中对其进行测试。

公开(公告)号：US4814856A

公开(公告)日：1989-03-21

申请号：US860523

申请日：1986-05-07

Applicant: Anthony D. Kurtz ,  Timothy A. Nunn ,  Richard A. Weber

Inventor： Anthony D. Kurtz ,  Timothy A. Nunn ,  Richard A. Weber

IPC: G01L9/00 ,  H01L27/20

CPC classification number: G01L9/0055 ,  G01L9/0042 ,  H01L27/20

Abstract: A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacarificial wafer, after beign subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by means of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.

Abstract translation: 通过在牺牲晶片中利用变化的高度扩散层来制造半导体传感器结构。 载体晶片在顶表面上具有包括玻璃层的电介质层。 在人造晶片经受高掺杂半导体材料的扩散后，表现出多个变化的深度区域。 这些区域表现出基本的换能器结构。 通过利用选择性蚀刻，因此可以在牺牲晶片上形成通过静电键结合到载体晶片上的换能器结构。 所得到的方法和结构使得能够提供能够适用于许多不同操作模式的改进的操作特性的换能器。

公开(公告)号：US4766763A

公开(公告)日：1988-08-30

申请号：US46167

申请日：1987-05-05

Applicant: Anthony D. Kurtz

Inventor： Anthony D. Kurtz

IPC: G01L19/04 ,  G01M3/26

CPC classification number: G01M3/26 ,  G01L9/065

Abstract: There is disclosed a gas leak detector employing pressure transducers. In one embodiment the pressure in a vessel is monitored by means of a pressure transducer. The output of the pressure transducer is coupled to an operational amplifier whereby the amplifier has a gain which is proportional to 1/T absolute. In this manner, since the gain is inversely proportional to temperature, the amplifier will produce an output which is independent of temperature but which is capable of providing a pressure indication when there is a gas leak in the container.

Abstract translation: 公开了一种使用压力传感器的气体泄漏检测器。 在一个实施例中，通过压力传感器监测容器中的压力。 压力传感器的输出耦合到运算放大器，由此放大器具有与1 / T绝对成比例的增益。 以这种方式，由于增益与温度成反比，所以放大器将产生与温度无关的输出，但是当容器中存在气体泄漏时能够提供压力指示。

公开(公告)号：US4513623A

公开(公告)日：1985-04-30

申请号：US530525

申请日：1983-09-09

Applicant: Anthony D. Kurtz ,  Joseph R. Mallon, Jr.

Inventor： Anthony D. Kurtz ,  Joseph R. Mallon, Jr.

IPC: G01L9/00 ,  G01L19/14 ,  G01L9/06

CPC classification number: G01L19/0084 ,  G01L19/14 ,  G01L19/143

Abstract: A transducer housing consists of a first and a second section. The first section contains an internal hollow into which a transistor header is mounted. The header, as mounted in the first section, is firmly secured within the section by means of a locking ring or other arrangement. Located in the internal hollow of the first section is a printed circuit board which has a plurality of apertures on the surface thereof each of which communicates with an extending tubular post on the opposite surface. Leads from the header are directed through the apertures in the printed circuit board and extend into the tubular posts. The second housing section is emplaced on the first section and contains a series of hollow metal tubular connectors or posts. These are inserted over the metal tubular posts of the header containing the leads and are crimped so that the posts of the transistor header as well as the leads are connected both electrically and mechanically to the tubular posts extending from the second housing section. Based on the above noted configuration, the housing sections serve to hold the transducer as mounted in the header in a firm and fixed position while enabling installation and interconnection of the transistor header in a rapid and simple manner based on the fact that the leads emanating from the header are crimped internally within the housing sections.

Abstract translation: 传感器外壳由第一和第二部分组成。 第一部分包含安装晶体管集管的内部空心。 安装在第一部分中的头部通过锁定环或其他布置牢固地固定在该部分内。 位于第一部分的内部中空部分中的印刷电路板在其表面上具有多个孔，每个孔与相对表面上的延伸管状柱连通。 从集管引出的引导通过印刷电路板中的孔并延伸到管状柱中。 第二壳体部分放置在第一部分上并且包含一系列中空金属管状连接器或柱。 这些插入到包含引线的插头的金属管状柱上，并且被压接，使得晶体管集管的端子以及引线电连接和机械连接到从第二壳体部分延伸的管状柱体。 基于上述配置，壳体部分用于将固定在集管中的换能器固定在固定位置，同时能够以快速且简单的方式安装和互连晶体管集管，基于以下事实：从 插头内部压接在外壳部分内。

公开(公告)号：US4483196A

公开(公告)日：1984-11-20

申请号：US472851

申请日：1983-03-07

Applicant: Anthony D. Kurtz ,  Joseph R. Mallon, Jr. ,  Timothy A. Nunn

Inventor： Anthony D. Kurtz ,  Joseph R. Mallon, Jr. ,  Timothy A. Nunn

IPC: G01L9/00 ,  G01L9/06

CPC classification number: G01L9/0052 ,  G01L9/0002

Abstract: A pressure transducer employs a tubular glass structure of a "D" shaped cross section, with the arcuate section of the "D" shaped configuration being substantially thicker than the base section. A sensor array is positioned on the underside of the base section while a pressure conducting fluid is directed through the tubular member to provide deflection of the base to cause the sensor array to provide an output indicative of pressure variations in the fluid medium. The sensor array as positioned on the underside of the base is both electrically and mechanically isolated from the pressure conducting medium.

Abstract translation: 压力传感器采用“D”形横截面的管状玻璃结构，“D”形构造的弓形部分基本上比基部部分厚。 传感器阵列定位在基部的下侧，同时压力传导流体被引导通过管状构件以提供基部的偏转，以使传感器阵列提供指示流体介质中的压力变化的输出。 位于基座下侧的传感器阵列与导电介质电气和机械隔离。

公开(公告)号：US4443293A

公开(公告)日：1984-04-17

申请号：US399422

申请日：1982-07-19

Applicant: Joseph R. Mallon ,  Anthony D. Kurtz

Inventor： Joseph R. Mallon ,  Anthony D. Kurtz

IPC: G01L9/00 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC classification number: G01L9/0042 ,  G01L9/0054

Abstract: There is disclosed a rectangular diaphragm employing a quasi rectangular active area. The diaphragm as configured has an aspect ratio which is the length to width ratio of greater than 3:1. The active area of the diaphragm, which is the area which most readily deflects upon application of a force to the diaphragm, is formed by an anisotropic etching technique to provide steep vertical sidewalls. The diaphragm structure thus described exhibits as a response to an applied force or pressure, a maximum longitudinal stress and a minimum transverse stress and can accommodate piezoresistive elements located within the active area of the diaphragm.

Abstract translation: 公开了采用准矩形有源区的矩形隔膜。 构造的隔膜具有长宽比大于3:1的纵横比。 通过各向异性蚀刻技术形成膜片的有效面积，其是在向膜片施加力时最容易偏转的区域，以提供陡峭的垂直侧壁。 如此描述的隔膜结构表现为对施加的力或压力，最大纵向应力和最小横向应力的响应，并且可以适应位于隔膜的有效区域内的压阻元件。

公开(公告)号：US4333349A

公开(公告)日：1982-06-08

申请号：US194034

申请日：1980-10-06

Applicant: Joseph R. Mallon ,  Anthony D. Kurtz

Inventor： Joseph R. Mallon ,  Anthony D. Kurtz

IPC: G01L1/22 ,  G01L9/00 ,  G01L9/06 ,  G01L19/04

CPC classification number: G01L9/0054 ,  G01L1/2281 ,  G01L9/06

Abstract: There is disclosed a balancing network for a piezoresistive semiconductor bridge configuration. The balancing network comprises a plurality of series resistors arranged in series with the sensing elements in the bridge configuration. Each resistor differs from the previous one according to a power of two to form a binary ladder arrangement. The individual resistors are associated with terminals to allow the transducer manufacturer to selectively short one or more resistors to provide zero balance compensation. The resistors are located on the nonactive portion of the semiconductor substrate and are fabricated by the same techniques employed for fabrication of the semiconductor piezoresistive sensing elements to assure temperature tracking of the unit with the desired temperature operating range.

Abstract translation: 公开了一种用于压阻半导体桥结构的平衡网络。 平衡网络包括与桥式结构中的感测元件串联布置的多个串联电阻器。 每个电阻器根据两者的功率而不同于前一个电阻器，以形成二进制梯形布置。 各个电阻器与端子相关联，以允许换能器制造商选择性地短路一个或多个电阻器以提供零平衡补偿。 电阻器位于半导体衬底的非活性部分上，并且通过用于制造半导体压阻式感测元件的相同技术制造，以确保具有所需温度操作范围的单元的温度跟踪。