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公开(公告)号：US20130009227A1
公开(公告)日：2013-01-10
申请号：US13614479
申请日：2012-09-13
IPC分类号： H01L27/07 , H01L21/8234
CPC分类号： H01L27/0808 , H01L21/26513 , H01L27/0811 , H01L27/088 , H01L29/7836
摘要： A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.
摘要翻译： 具有动态栅极漏极电容的半导体器件。 一个实施例提供一种半导体器件。 该器件包括半导体衬底，场效应晶体管结构，其包括源区，第一体区，漏区，栅电极结构和栅极绝缘层。 栅极绝缘层设置在栅电极结构和体区之间。 栅极电极结构和漏极区域部分地形成电容器结构，其包括栅极 - 漏极电容，该栅极 - 漏极电容被配置为随着施加在源极和漏极区域之间的变化的反向电压而动态地 栅极 - 漏极电容在给定的阈值下包括至少一个局部最大值，或者在给定的反向电压下包括平台状过程。
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公开(公告)号：US08829584B2
公开(公告)日：2014-09-09
申请号：US13614479
申请日：2012-09-13
IPC分类号： H01L27/07
CPC分类号： H01L27/0808 , H01L21/26513 , H01L27/0811 , H01L27/088 , H01L29/7836
摘要： A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.
摘要翻译： 具有动态栅极漏极电容的半导体器件。 一个实施例提供一种半导体器件。 该器件包括半导体衬底，场效应晶体管结构，其包括源区，第一体区，漏区，栅电极结构和栅极绝缘层。 栅极绝缘层设置在栅电极结构和体区之间。 栅极电极结构和漏极区域部分地形成电容器结构，其包括栅极 - 漏极电容，该栅极 - 漏极电容被配置为随着施加在源极和漏极区域之间的变化的反向电压而动态地 栅极 - 漏极电容在给定的阈值下包括至少一个局部最大值，或者在给定的反向电压下包括平台状过程。
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公开(公告)号：US08273622B2
公开(公告)日：2012-09-25
申请号：US13161050
申请日：2011-06-15
IPC分类号： H01L29/94
CPC分类号： H01L27/0808 , H01L21/26513 , H01L27/0811 , H01L27/088 , H01L29/7836
摘要： A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.
摘要翻译： 具有动态栅极漏极电容的半导体器件。 一个实施例提供一种半导体器件。 该器件包括半导体衬底，场效应晶体管结构，其包括源区，第一体区，漏区，栅电极结构和栅极绝缘层。 栅极绝缘层设置在栅电极结构和体区之间。 栅极电极结构和漏极区域部分地形成电容器结构，其包括栅极 - 漏极电容，该栅极 - 漏极电容被配置为随着施加在源极和漏极区域之间的变化的反向电压而动态地 栅极 - 漏极电容在给定的阈值下包括至少一个局部最大值，或者在给定的反向电压下包括平台状过程。
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公开(公告)号：US20110244646A1
公开(公告)日：2011-10-06
申请号：US13161050
申请日：2011-06-15
IPC分类号： H01L21/336
CPC分类号： H01L27/0808 , H01L21/26513 , H01L27/0811 , H01L27/088 , H01L29/7836
摘要： A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.
摘要翻译： 具有动态栅极漏极电容的半导体器件。 一个实施例提供一种半导体器件。 该器件包括半导体衬底，场效应晶体管结构，其包括源区，第一体区，漏区，栅电极结构和栅极绝缘层。 栅极绝缘层设置在栅电极结构和体区之间。 栅极电极结构和漏极区域部分地形成电容器结构，其包括栅极 - 漏极电容，该栅极 - 漏极电容被配置为随着施加在源极和漏极区域之间的变化的反向电压而动态地 栅极 - 漏极电容在给定的阈值下包括至少一个局部最大值，或者在给定的反向电压下包括平台状过程。
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公开(公告)号：US07982253B2
公开(公告)日：2011-07-19
申请号：US12184819
申请日：2008-08-01
IPC分类号： H01L29/94
CPC分类号： H01L27/0808 , H01L21/26513 , H01L27/0811 , H01L27/088 , H01L29/7836
摘要： A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.
摘要翻译： 具有动态栅极漏极电容的半导体器件。 一个实施例提供一种半导体器件。 该器件包括半导体衬底，场效应晶体管结构，其包括源区，第一体区，漏区，栅电极结构和栅极绝缘层。 栅极绝缘层设置在栅电极结构和体区之间。 栅极电极结构和漏极区域部分地形成电容器结构，其包括栅极 - 漏极电容，该栅极 - 漏极电容被配置为随着施加在源极和漏极区域之间的变化的反向电压而动态地改变。 栅极 - 漏极电容在给定的阈值下包括至少一个局部最大值，或者在给定的反向电压下包括平台状过程。
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46.发明申请SEMICONDUCTOR COMPONENT WITH VERTICAL STRUCTURES HAVING A HIGH ASPECT RATIO AND METHOD 有权具有高度比例和方法的垂直结构的半导体元件公开(公告)号：US20080197441A1
公开(公告)日：2008-08-21
申请号：US12021736
申请日：2008-01-29
IPC分类号： H01L23/58 , H01L21/762
CPC分类号： H01L21/76224 , H01L29/0653 , H01L29/0878 , H01L29/161 , H01L29/165 , H01L29/407 , H01L29/66734 , H01L29/7803 , H01L29/7804 , H01L29/7806 , H01L29/7813 , H01L29/7831
摘要： A semiconductor component with vertical structures having a high aspect ratio and method. In one embodiment, a drift zone is arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone in a first direction. A dielectric layer is arranged between the drift zone and the drift control zone wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric.
摘要翻译： 具有高纵横比和垂直结构的半导体元件。 在一个实施例中，漂移区布置在第一和第二组分区之间。 漂移控制区在第一方向上布置成与漂移区相邻。 电介质层布置在漂移区和漂移控制区之间，其中漂移区具有至少在从电介质进行的部分中的变化的掺杂和/或变化的材料组成。
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公开(公告)号：US20140002145A1
公开(公告)日：2014-01-02
申请号：US13534003
申请日：2012-06-27
申请人： Anton Mauder , Armin Willmeroth
发明人： Anton Mauder , Armin Willmeroth
IPC分类号： H03K3/015
CPC分类号： H03K17/06
摘要： In various embodiments, a driving circuit for a transistor is provided. The driving circuit may include a transistor including a control terminal; a capacitance; a first switch and a power source, wherein the first switch may be coupled between the power source and a first terminal of the capacitance; a second switch and an inductance which may be coupled in series between the first terminal of the capacitance and the control terminal of the transistor.
摘要翻译： 在各种实施例中，提供了一种用于晶体管的驱动电路。 驱动电路可以包括：包括控制端子的晶体管; 电容; 第一开关和电源，其中所述第一开关可以耦合在所述电源和所述电容的第一端之间; 可以串联耦合在电容的第一端和晶体管的控制端之间的第二开关和电感。
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48.发明申请SEMICONDUCTOR COMPONENT INCLUDING A MONOCRYSTALLINE SEMICONDUCTOR BODY AND METHOD 审中-公开包含单晶半导体器件和方法的半导体元件公开(公告)号：US20080246055A1
公开(公告)日：2008-10-09
申请号：US11867411
申请日：2007-10-04
IPC分类号： H01L29/739 , H01L29/78 , H01L21/331
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/1095 , H01L29/16 , H01L29/402 , H01L29/41766 , H01L29/66128 , H01L29/66348 , H01L29/66719 , H01L29/66727 , H01L29/7397 , H01L29/861 , H01L29/8611
摘要： A semiconductor component comprising a monocrystalline semiconductor body, and to a method for producing the same is disclosed. In one embodiment, the semiconductor body has a semiconductor component structure with regions of a porous-mono crystalline semiconductor.
摘要翻译： 公开了一种包括单晶半导体本体的半导体元件及其制造方法。 在一个实施例中，半导体本体具有具有多孔 - 单晶半导体区域的半导体部件结构。
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49.发明授权Semiconductor component with vertical structures having a high aspect ratio and method 有权具有高纵横比的垂直结构的半导体元件和方法公开(公告)号：US08513730B2
公开(公告)日：2013-08-20
申请号：US12021736
申请日：2008-01-29
CPC分类号： H01L21/76224 , H01L29/0653 , H01L29/0878 , H01L29/161 , H01L29/165 , H01L29/407 , H01L29/66734 , H01L29/7803 , H01L29/7804 , H01L29/7806 , H01L29/7813 , H01L29/7831
摘要： A semiconductor component with vertical structures having a high aspect ratio and method. In one embodiment, a drift zone is arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone in a first direction. A dielectric layer is arranged between the drift zone and the drift control zone wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric.
摘要翻译： 具有高纵横比和垂直结构的半导体元件。 在一个实施例中，漂移区布置在第一和第二组分区之间。 漂移控制区在第一方向上布置成与漂移区相邻。 电介质层布置在漂移区和漂移控制区之间，其中漂移区具有至少在从电介质进行的部分中的变化的掺杂和/或变化的材料组成。
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公开(公告)号：US20100025748A1
公开(公告)日：2010-02-04
申请号：US12184819
申请日：2008-08-01
IPC分类号： H01L29/94 , H01L21/8234
CPC分类号： H01L27/0808 , H01L21/26513 , H01L27/0811 , H01L27/088 , H01L29/7836
摘要： A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.
摘要翻译： 具有动态栅极漏极电容的半导体器件。 一个实施例提供一种半导体器件。 该器件包括半导体衬底，场效应晶体管结构，其包括源区，第一体区，漏区，栅电极结构和栅极绝缘层。 栅极绝缘层设置在栅电极结构和体区之间。 栅极电极结构和漏极区域部分地形成电容器结构，其包括栅极 - 漏极电容，该栅极 - 漏极电容被配置为随着施加在源极和漏极区域之间的变化的反向电压而动态地 栅极 - 漏极电容在给定的阈值下包括至少一个局部最大值，或者在给定的反向电压下包括平台状过程。
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