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    SEMICONDUCTOR DEVICE WITH A DYNAMIC GATE-DRAIN CAPACITANCE
    1.
    发明申请
    SEMICONDUCTOR DEVICE WITH A DYNAMIC GATE-DRAIN CAPACITANCE 有权
    具有动态栅极导通电容的半导体器件

    公开(公告)号：US20130009227A1

    公开(公告)日：2013-01-10

    申请号：US13614479

    申请日：2012-09-13

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

    IPC分类号： H01L27/07 ,  H01L21/8234

    CPC分类号： H01L27/0808 ,  H01L21/26513 ,  H01L27/0811 ,  H01L27/088 ,  H01L29/7836

    摘要： A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.

    摘要翻译： 具有动态栅极漏极电容的半导体器件。 一个实施例提供一种半导体器件。 该器件包括半导体衬底，场效应晶体管结构，其包括源区，第一体区，漏区，栅电极结构和栅极绝缘层。 栅极绝缘层设置在栅电极结构和体区之间。 栅极电极结构和漏极区域部分地形成电容器结构，其包括栅极 - 漏极电容，该栅极 - 漏极电容被配置为随着施加在源极和漏极区域之间的变化的反向电压而动态地 栅极 - 漏极电容在给定的阈值下包括至少一个局部最大值，或者在给定的反向电压下包括平台状过程。

    Integrated circuit including a charge compensation component
    4.
    发明授权
    Integrated circuit including a charge compensation component 有权
    集成电路包括电荷补偿元件

    公开(公告)号：US07968919B2

    公开(公告)日：2011-06-28

    申请号：US11961235

    申请日：2007-12-20

    申请人： Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

    发明人： Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7813

    摘要： A charge compensation component having a drift path between two electrodes, an electrode and a counterelectrode, and methods for producing the same. The drift path has drift zones of a first conduction type and charge compensation zones of a complementary conduction type with respect to the first conduction type. A drift path layer doping comprising the volume integral of the doping locations of a horizontal drift path layer of the vertically extending drift path including the drift zone regions and charge compensation zone regions arranged in the drift path layer is greater in the vicinity of the electrodes than in the direction of the center of the drift path.

    摘要翻译： 具有两个电极之间的漂移路径的电荷补偿组件，电极和反电极及其制造方法。 漂移路径具有第一导电类型的漂移区和相对于第一导电类型的互补导电类型的电荷补偿区。 包括垂直延伸的漂移路径的水平漂移路径层的掺杂位置的体积积分的漂移路径层掺杂包括布置在漂移路径层中的漂移区域和电荷补偿区域在电极附近较大， 在漂移路径的中心方向。

    Semiconductor component with a low on-state resistance
    10.
    发明申请
    Semiconductor component with a low on-state resistance 有权
    具有低导通电阻的半导体元件

    公开(公告)号：US20070023830A1

    公开(公告)日：2007-02-01

    申请号：US11435979

    申请日：2006-05-17

    申请人： Frank Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

    发明人： Frank Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/872

    摘要： A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.

    摘要翻译： 公开了一种具有半导体本体的半导体部件。 在一个实施例中，半导体部件包括第一导电类型的漂移区，由半导体材料构成的漂移控制区，该半导体材料至少位于与漂移区相邻的位置处，布置在漂移区和 漂移控制区至少在地方。 漂移控制区的净掺杂剂电荷在与积聚电介质和漂移区相邻的区域除以布置在漂移控制区和漂移区之间的介质的面积除以小于 漂移控制区中的半导体材料。