公开(公告)号：US07259425B2

公开(公告)日：2007-08-21

申请号：US10348911

申请日：2003-01-23

Applicant: Judy Xilin An ,  Haihong Wang ,  Bin Yu

Inventor： Judy Xilin An ,  Haihong Wang ,  Bin Yu

IPC: H01L29/72

CPC classification number: H01L29/785 ,  H01L29/42384 ,  H01L29/66545 ,  H01L29/66795

Abstract: A triple gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin structure, a first gate formed adjacent a first side of the fin structure, a second gate formed adjacent a second side of the fin structure opposite the first side, and a top gate formed on top of the fin structure. A gate around MOSFET includes multiple fins, a first sidewall gate structure formed adjacent one of the fins, a second sidewall gate structure formed adjacent another one of the fins, a top gate structure formed on one or more of the fins, and a bottom gate structure formed under one or more of the fins.

Abstract translation: 三栅极金属氧化物半导体场效应晶体管（MOSFET）包括翅片结构，邻近翅片结构的第一侧形成的第一栅极，与第一侧相对的翅片结构的第二侧附近形成的第二栅极，以及 形成在鳍结构顶部的顶门。 MOSFET周围的栅极包括多个散热片，邻近其中一个翅片形成的第一侧壁栅极结构，邻近另一个鳍片形成的第二侧壁栅极结构，形成在一个或多个翅片上的顶部栅极结构，以及底部栅极 在一个或多个翅片下形成的结构。

公开(公告)号：US07256455B2

公开(公告)日：2007-08-14

申请号：US10720166

申请日：2003-11-25

Applicant: Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/76

CPC classification number: H01L29/785 ,  H01L29/42384 ,  H01L29/66545 ,  H01L29/66795

Abstract: A semiconductor device may include a substrate, an insulating layer formed on the substrate and a conductive fin formed on the insulating layer. The conductive fin may include a number of side surfaces and a top surface. The semiconductor device may also include a source region formed on the insulating layer adjacent a first end of the conductive fin and a drain region formed on the insulating layer adjacent a second end of the conductive fin. The semiconductor device may further include a metal gate formed on the insulating layer adjacent the conductive fin in a channel region of the semiconductor device.

Abstract translation: 半导体器件可以包括衬底，形成在衬底上的绝缘层和形成在绝缘层上的导电鳍。 导电翅片可以包括多个侧表面和顶表面。 半导体器件还可以包括形成在与导电鳍片的第一端相邻的绝缘层上的源极区域和形成在与导电鳍片的第二端相邻的绝缘层上的漏极区域。 半导体器件还可以包括在半导体器件的沟道区域中形成在与绝缘层相邻的导电鳍片上的金属栅极。

公开(公告)号：US07186599B2

公开(公告)日：2007-03-06

申请号：US10754540

申请日：2004-01-12

Applicant: Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L29/785 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method of forming a fin field effect transistor includes forming a fin and forming a source region on a first end of the fin and a drain region on a second end of the fin. The method further includes forming a dummy gate with a first semi-conducting material in a first pattern over the fin and forming a dielectric layer around the dummy gate. The method also includes removing the first semi-conducting material to leave a trench in the dielectric layer corresponding to the first pattern, thinning a portion of the fin exposed within the trench, and forming a metal gate within the trench.

Abstract translation: 形成鳍状场效应晶体管的方法包括：在鳍片的第一端上形成翅片并形成源极区域，在鳍片的第二端部形成漏极区域。 该方法还包括在鳍上形成具有第一图案的第一半导体材料的虚拟栅极，并在虚拟栅极周围形成介电层。 该方法还包括去除第一半导体材料以在对应于第一图案的电介质层中留下沟槽，使在沟槽内暴露的鳍片的一部分变薄，并在沟槽内形成金属栅极。

公开(公告)号：US07148526B1

公开(公告)日：2006-12-12

申请号：US10348758

申请日：2003-01-23

Applicant: Judy Xilin An ,  Zoran Krivokapic ,  Haihong Wang ,  Bin Yu

Inventor： Judy Xilin An ,  Zoran Krivokapic ,  Haihong Wang ,  Bin Yu

IPC: H01L29/72

CPC classification number: H01L29/7855 ,  H01L21/823821 ,  H01L29/42384 ,  H01L29/7843 ,  H01L29/78684

Abstract: A double gate germanium metal-oxide semiconductor field-effect transistor (MOSFET) includes a germanium fin, a first gate formed adjacent a first side of the germanium fin, and a second gate formed adjacent a second side of the germanium fin opposite the first side. A triple gate MOSFET includes a germanium fin, a first gate formed adjacent a first side of the germanium fin, a second gate formed adjacent a second side of the germanium fin opposite the first side, and a top gate formed on top of the germanium fin. An all-around gate MOSFET includes a germanium fin, a first sidewall gate structure formed adjacent a first side of the germanium fin, a second sidewall gate structure formed adjacent a second side of the germanium fin, and additional gate structures formed on and around the germanium fin.

Abstract translation: 双栅极锗金属氧化物半导体场效应晶体管（MOSFET）包括锗翅片，邻近锗翅片的第一侧形成的第一栅极和与第一侧相对的锗翅片第二侧附近形成的第二栅极 。 三栅极MOSFET包括锗翅片，与锗翅片的第一侧相邻形成的第一栅极，与第一侧相对的锗翅片的第二侧附近形成的第二栅极和形成在锗翅片顶部上的顶栅极 。 全栅极MOSFET包括锗翅片，邻近锗翅片的第一侧形成的第一侧壁栅极结构，邻近锗翅片的第二侧形成的第二侧壁栅极结构，以及形成在锗翅片上和周围的附近的栅极结构 锗鳍

公开(公告)号：US07034361B1

公开(公告)日：2006-04-25

申请号：US10653234

申请日：2003-09-03

Applicant: Bin Yu ,  Shibly S. Ahmed ,  Haihong Wang

Inventor： Bin Yu ,  Shibly S. Ahmed ,  Haihong Wang

IPC: H01L27/01

CPC classification number: H01L29/785 ,  H01L29/4908 ,  H01L29/66545 ,  H01L29/66621 ,  H01L29/66795

Abstract: A semiconductor device includes a fin, a source region formed adjacent the fin and having a height greater than that of the fin, and a drain region formed adjacent the a second side of the fin and having a height greater than that of the fin. A metal gate region is formed at a top surface and at least one side surface of the fin. A width of the source and drain region may be greater than that of the fin. The semiconductor device may exhibit a reduced series resistance and an improved transistor drive current.

Abstract translation: 半导体器件包括鳍状物，邻近翅片形成的源极区域，其高度大于鳍状物的高度;以及漏极区域，其形成在翅片的第二侧附近并且具有高于翅片的高度。 金属栅极区域形成在翅片的顶表面和至少一个侧表面处。 源极和漏极区域的宽度可以大于鳍片的宽度。 半导体器件可以呈现减小的串联电阻和改进的晶体管驱动电流。

公开(公告)号：US07029958B2

公开(公告)日：2006-04-18

申请号：US10699887

申请日：2003-11-04

Applicant: Cyrus E. Tabery ,  Shibly S. Ahmed ,  Matthew S. Buynoski ,  Srikanteswara Dakshina-Murthy ,  Zoran Krivokapic ,  Haihong Wang ,  Chih-Yuh Yang ,  Bin Yu

Inventor： Cyrus E. Tabery ,  Shibly S. Ahmed ,  Matthew S. Buynoski ,  Srikanteswara Dakshina-Murthy ,  Zoran Krivokapic ,  Haihong Wang ,  Chih-Yuh Yang ,  Bin Yu

IPC: H01L21/00

CPC classification number: H01L29/785 ,  H01L29/66818 ,  H01L29/7842

Abstract: A method for forming a metal-oxide semiconductor field-effect transistor (MOSFET) includes patterning a fin area, a source region, and a drain region on a substrate, forming a fin in the fin area, and forming a mask in the fin area. The method further includes etching the mask to expose a channel area of the MOSFET, etching the fin to thin a width of the fin in the channel area, forming a gate over the fin, and forming contacts to the gate, the source region, and the drain region.

Abstract translation: 一种形成金属氧化物半导体场效应晶体管（MOSFET）的方法包括在衬底上构图翅片区域，源极区域和漏极区域，在翅片区域中形成鳍片，并在鳍片区域中形成掩模 。 该方法还包括蚀刻掩模以暴露MOSFET的沟道区域，蚀刻鳍以在沟道区域中减薄翅片的宽度，在鳍上方形成栅极，以及形成与栅极，源区和 漏极区域。

公开(公告)号：US20050153492A1

公开(公告)日：2005-07-14

申请号：US10754559

申请日：2004-01-12

Applicant: Shibly Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Shibly Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L21/336 ,  H01L29/786 ,  H01L21/338

CPC classification number: H01L29/785 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method of forming a fin field effect transistor includes forming a fin and forming a source region adjacent a first end of the fin and a drain region adjacent a second end of the fin. The method further includes forming a dummy gate over the fin and forming a dielectric layer around the dummy gate. The method also includes removing the dummy gate to form a trench in the dielectric layer and forming a metal gate in the trench.

Abstract translation: 形成鳍状场效应晶体管的方法包括形成鳍片并形成与鳍片的第一端相邻的源极区域和与鳍片的第二端部相邻的漏极区域。 该方法还包括在鳍上方形成虚拟栅极，并在虚拟栅极周围形成电介质层。 该方法还包括去除伪栅极以在电介质层中形成沟槽并在沟槽中形成金属栅极。

公开(公告)号：US20050104091A1

公开(公告)日：2005-05-19

申请号：US10699887

申请日：2003-11-04

Applicant: Cyrus Tabery ,  Shibly Ahmed ,  Matthew Buynoski ,  Srikanteswara Dakshina-Murthy ,  Zoran Krivokapic ,  Haihong Wang ,  Chih-Yuh Yang ,  Bin Yu

Inventor： Cyrus Tabery ,  Shibly Ahmed ,  Matthew Buynoski ,  Srikanteswara Dakshina-Murthy ,  Zoran Krivokapic ,  Haihong Wang ,  Chih-Yuh Yang ,  Bin Yu

IPC: H01L21/336 ,  H01L29/786 ,  H01L29/745

CPC classification number: H01L29/785 ,  H01L29/66818 ,  H01L29/7842

Abstract: A method for forming a metal-oxide semiconductor field-effect transistor (MOSFET) includes patterning a fin area, a source region, and a drain region on a substrate, forming a fin in the fin area, and forming a mask in the fin area. The method further includes etching the mask to expose a channel area of the MOSFET, etching the fin to thin a width of the fin in the channel area, forming a gate over the fin, and forming contacts to the gate, the source region, and the drain region.

Abstract translation: 一种形成金属氧化物半导体场效应晶体管（MOSFET）的方法包括在衬底上构图翅片区域，源极区域和漏极区域，在翅片区域中形成鳍片，并在鳍片区域中形成掩模 。 该方法还包括蚀刻掩模以暴露MOSFET的沟道区域，蚀刻鳍以在沟道区域中减薄翅片的宽度，在鳍上方形成栅极，以及形成与栅极，源区和 漏极区域。

公开(公告)号：US06894337B1

公开(公告)日：2005-05-17

申请号：US10768014

申请日：2004-02-02

Applicant: Haihong Wang ,  Shibly S. Ahmed ,  Bin Yu

Inventor： Haihong Wang ,  Shibly S. Ahmed ,  Bin Yu

IPC: H01L21/20 ,  H01L21/336 ,  H01L27/08 ,  H01L29/786

CPC classification number: H01L29/785 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/2022 ,  H01L29/66795 ,  H01L29/7853

Abstract: A method facilitates the formation of a stacked fin structure for a semiconductor device that includes a substrate. The method includes forming one or more oxide layers on the substrate and forming one or more amorphous silicon layers interspersed with the one or more oxide layers. The method further includes etching the one or more oxide layers and the one or more amorphous silicon layers to form a stacked fin structure and performing a metal-induced crystallization operation to convert the one or more amorphous silicon layers to one or more crystalline silicon layers.

Abstract translation: 一种方法有助于形成用于包括衬底的半导体器件的堆叠鳍式结构。 该方法包括在衬底上形成一个或多个氧化物层并形成与该一个或多个氧化物层分开的一个或多个非晶硅层。 该方法还包括蚀刻一个或多个氧化物层和一个或多个非晶硅层以形成堆叠鳍状结构，并执行金属诱导结晶操作以将一个或多个非晶硅层转换成一个或多个结晶硅层。

公开(公告)号：US06855989B1

公开(公告)日：2005-02-15

申请号：US10674520

申请日：2003-10-01

Applicant: Haihong Wang ,  Shibly S. Ahmed ,  Ming-Ren Lin ,  Bin Yu

Inventor： Haihong Wang ,  Shibly S. Ahmed ,  Ming-Ren Lin ,  Bin Yu

IPC: H01L21/336 ,  H01L27/01 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/785 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66795

Abstract: A fin field effect transistor includes a fin, a source region, a drain region, a first gate electrode and a second gate electrode. The fin includes a channel. The source region is formed adjacent a first end of the fin and the drain region is formed adjacent a second end of the fin. The first gate electrode includes a first layer of metal material formed adjacent the fin. The second gate electrode includes a second layer of metal material formed adjacent the first layer. The first layer of metal material has a different work function than the second layer of metal material. The second layer of metal material selectively diffuses into the first layer of metal material via metal interdiffusion.

Abstract translation: 翅片场效应晶体管包括鳍片，源极区域，漏极区域，第一栅极电极和第二栅极电极。 鳍包括一个通道。 源区域邻近翅片的第一端形成，并且漏极区域邻近翅片的第二端形成。 第一栅电极包括邻近翅片形成的第一金属材料层。 第二栅电极包括与第一层相邻形成的第二金属材料层。 第一层金属材料具有与第二层金属材料不同的功函数。 金属材料的第二层选择性地通过金属相互扩散扩散到金属材料的第一层中。