-
公开(公告)号：US20140160335A1
公开(公告)日：2014-06-12
申请号：US14099449
申请日：2013-12-06
发明人： Mineo Shimotsusa
IPC分类号： H01L27/146 , H04N5/372 , H01L27/148
CPC分类号： H01L27/1463 , H01L27/14627 , H01L27/1464 , H01L27/14698 , H04N5/378
摘要： A method of manufacturing a solid-state image sensor, includes forming a first isolation region of a first conductivity type in a semiconductor layer having first and second surfaces, the forming the first isolation region including first implantation for implanting ions into the semiconductor layer through the first surface, forming charge accumulation regions of a second conductivity type in the semiconductor layer, performing first annealing, forming an interconnection on a side of the first surface of the semiconductor layer after the first annealing, and forming a second isolation region of the first conductivity type in the semiconductor layer, the forming the second isolation region including second implantation for implanting ions into the semiconductor layer through the second surface. The first and second isolation regions are arranged between the adjacent charge accumulation regions.
摘要翻译： 一种制造固态图像传感器的方法，包括在具有第一和第二表面的半导体层中形成第一导电类型的第一隔离区域，形成第一隔离区域，该第一隔离区域包括第一注入，用于通过 在所述半导体层中形成第二导电类型的电荷蓄积区，在所述第一退火之后进行第一退火，在所述半导体层的所述第一表面侧形成互连，以及形成所述第一导电性的第二隔离区 形成第二隔离区域，该第二隔离区域包括用于通过第二表面将离子注入半导体层的第二注入。 第一和第二隔离区域布置在相邻的电荷累积区域之间。
-
公开(公告)号：US20140094030A1
公开(公告)日：2014-04-03
申请号：US14038484
申请日：2013-09-26
发明人： Mineo Shimotsusa
IPC分类号： H01L21/768
CPC分类号： H01L21/768 , H01L21/76898 , H01L23/481 , H01L24/05 , H01L27/14623 , H01L27/14627 , H01L27/14634 , H01L27/14636 , H01L27/14638 , H01L27/1464 , H01L27/1469 , H01L2224/02166 , H01L2224/04042 , H01L2224/08145 , H01L2224/24147 , H01L2224/48463 , H01L2224/80896 , H01L2224/8203 , H01L2224/92 , H01L2924/12043 , H01L2924/13091 , H01L2924/00 , H01L2224/80001 , H01L2224/82
摘要： A first wiring part has an intermediate layer made of a material different from materials of a first insulator layer and a first conductor layer and located between the first insulator layer and the first conductor layer. In a step of forming a first hole, which penetrates through a first element part and the first insulator layer, from a side of a first semiconductor layer toward the first conductor layer, and forming a second hole, which penetrates through the first element part, the first wiring part, and a second insulator layer, from the side toward the second conductor layer, an etching condition of the first insulator layer when the first hole is formed is that an etching rate for the material of the first insulator layer under the etching condition is higher than an etching rate for the material of the intermediate layer under the etching condition.
摘要翻译： 第一布线部分具有由与第一绝缘体层和第一导体层的材料不同的材料制成并位于第一绝缘体层和第一导体层之间的中间层。 在从第一半导体层侧朝向第一导体层形成穿过第一元件部和第一绝缘体层的第一孔的工序中，形成穿过第一元件部的第二孔， 第一布线部分和第二绝缘体层，从一侧到第二导体层，当形成第一孔时第一绝缘体层的蚀刻条件是蚀刻下的第一绝缘体层的材料的蚀刻速率 条件高于蚀刻条件下中间层材料的蚀刻速率。
-
公开(公告)号：US20130222657A1
公开(公告)日：2013-08-29
申请号：US13770307
申请日：2013-02-19
发明人： Mineo Shimotsusa
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14601 , H01L27/14609 , H01L27/14625 , H01L27/1463 , H01L27/14636 , H01L31/18 , H01L2224/05 , H01L2224/48463
摘要： A solid-state image sensor includes a semiconductor layer, a multilayer wiring layer, an opening which extends through the semiconductor layer, and reaches an electrically conductive layer in the multilayer wiring layer, an electrically conductive member arranged in the opening so as to be connected to the electrically conductive layer, and a trench which surrounds the opening, and extends through the semiconductor layer, the trench having a space with no solid substance, and the semiconductor layer including a wall portion arranged between a side face defining the opening, and an inner-side face defining the trench to surround the electrically conductive member.
摘要翻译： 固态图像传感器包括半导体层，多层布线层，延伸穿过半导体层的开口，并到达多层布线层中的导电层;布置在开口中以连接的导电构件 导电层，以及围绕开口并延伸穿过半导体层的沟槽，沟槽具有不具有固体物质的空间，并且该半导体层包括布置在限定开口的侧面之间的壁部分和 内侧面限定沟槽以包围导电构件。
-
公开(公告)号：US12068351B2
公开(公告)日：2024-08-20
申请号：US18322239
申请日：2023-05-23
发明人： Mineo Shimotsusa
IPC分类号： H01L27/146 , H01L31/09
CPC分类号： H01L27/14636 , H01L27/14601 , H01L27/14634 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14687 , H01L27/1469 , H01L31/09 , H01L27/14621
摘要： A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.
-
公开(公告)号：US20230299112A1
公开(公告)日：2023-09-21
申请号：US18322239
申请日：2023-05-23
发明人： Mineo Shimotsusa
IPC分类号： H01L27/146 , H01L31/09
CPC分类号： H01L27/14636 , H01L27/14601 , H01L27/14634 , H01L27/1464 , H01L27/14687 , H01L31/09 , H01L27/14645 , H01L27/1469 , H01L27/14685 , H01L27/14621
摘要： A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.
-
公开(公告)号：US11577508B2
公开(公告)日：2023-02-14
申请号：US16919960
申请日：2020-07-02
摘要： A highly reliable multilayer structure element substrate according to an embodiment of this present invention comprises: an electrothermal transducer; a temperature detection element formed at a position where the temperature detection element at least partially overlaps the electrothermal transducer in a planar view of the element substrate; and a plurality of wirings connected to the temperature detection element, wherein the temperature detection element can detect temperatures in a plurality of regions when a plurality of different wirings out of the plurality of wirings are selected.
-
公开(公告)号：US20220375981A1
公开(公告)日：2022-11-24
申请号：US17816844
申请日：2022-08-02
IPC分类号： H01L27/146 , H01L31/024 , H01L23/00
摘要： A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate.
-
公开(公告)号：US11358389B2
公开(公告)日：2022-06-14
申请号：US16928907
申请日：2020-07-14
摘要： An element substrate has a layered structure including a heating resistance element, a first insulation layer where a temperature detection element constituted by a via is formed, and a second insulation layer provided between the heating resistance element and the temperature detection element which electrically insulates the heating resistance element and the temperature detection element.
-
公开(公告)号：US20220037390A1
公开(公告)日：2022-02-03
申请号：US17505039
申请日：2021-10-19
发明人： Mineo Shimotsusa
IPC分类号： H01L27/146 , H01L31/09
摘要： A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.
-
公开(公告)号：US20210370669A1
公开(公告)日：2021-12-02
申请号：US17242747
申请日：2021-04-28
发明人： Mineo Shimotsusa , Hiroyasu Nomura
摘要： A liquid discharge head, comprising an insulating member arranged on a substrate, a resistive heating element arranged in the insulating member and configured to generate thermal energy used to discharge a liquid, a bubble chamber provided above the insulating member and configured to generate bubbles of the liquid based on the thermal energy, and a temperature detection element capable of detecting a temperature in the bubble chamber, wherein the temperature detection element is arranged between the resistive heating element and the bubble chamber and in a conductive layer closest to the bubble chamber in a plurality of conductive layers provided with respect to the insulating member.
-
-
-
-
-
-
-
-
-
搜索结果
129 条记录 (耗时 0.02 秒)
