公开(公告)号：US20210347689A1

公开(公告)日：2021-11-11

申请号：US17285322

申请日：2019-10-09

Applicant: CORNING INCORPORATED ,  THE INSTITUTE OF PHOTONIC SCIENCES

Inventor： Miriam Marchena Martín-Francés ,  Prantik Mazumder ,  Valerio Pruneri

IPC: C03C23/00 ,  C01B32/194

Abstract: A method of forming a graphene device includes: providing a glass substrate with a blocking layer disposed thereon to form a stack; providing a first electrode and a second electrode; increasing the temperature of the stack to at least 100° C.; applying an external electric field (VP) to the first electrode such that at least one metal ion of the glass substrate migrates toward the first electrode to create a depletion region in the glass substrate adjacent the second electrode; decreasing the temperature of the stack to room temperature while applying the external electric field to the first electrode; and after reaching room temperature, setting the external electric field to zero to create a frozen voltage region adjacent the second electrode.

公开(公告)号：US20210095371A1

公开(公告)日：2021-04-01

申请号：US17038991

申请日：2020-09-30

Applicant: Corning Incorporated ,  ICFO - The Institute of Photonic Sciences ,  INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS

Inventor： Rinu Maniyara ,  Prantik Mazumder ,  Valerio Pruneri

IPC: C23C14/58 ,  H01B1/08 ,  C23C14/08 ,  C23C14/35

Abstract: A method is provided for manufacturing an article comprising a transparent conductive material, wherein a transparent conductive material (e.g., indium tin oxide) is deposited onto a substrate (e.g., fused silica) by physical vapor deposition, then annealed at high temperature (i.e., at least 450° C.) in a nitrogen atmosphere. The resulting article comprises a transparent conductive material that reduces the trade-off between low resistivity (or sheet resistance) and high near infrared transmission. For example, the transparent conductive material thus obtained may possess a transmission of at least 80% at 1550 nm while having a resistivity of less than or equal to about 5×10−4 Ohm-cm and a Haacke figure of merit of at least about 40×10−4Ω−1. Also provided is a method for modulating the resistivity and/or the near infrared transmission of a transparent conductive material by annealing the transparent conductive material at a high temperature under nitrogen atmosphere.

公开(公告)号：US10898933B2

公开(公告)日：2021-01-26

申请号：US13905367

申请日：2013-05-30

Applicant: Corning Incorporated

Inventor： Adra Smith Baca ,  David Eugene Baker ,  Prantik Mazumder ,  Mark Alejandro Quesada ,  Wageesha Senaratne

IPC: C09D5/16 ,  B82Y30/00 ,  C03C17/23 ,  C03C17/30 ,  B08B17/06 ,  B05D5/00 ,  C03C17/245

Abstract: Described herein are glass substrates having oleophobic surfaces that are substantially free of features that form a reentrant geometry. The surfaces can include a plurality of gas-trapping features, extending from the surface to a depth below the surface, that are substantially isolated from each other. The gas-trapping features are capable of trapping gas below any droplets that are contacted with the surface so as to prevent wetting of the surface by the droplets.

公开(公告)号：US20200290921A1

公开(公告)日：2020-09-17

申请号：US16891606

申请日：2020-06-03

Applicant: CORNING INCORPORATED ,  ICFO

Inventor： Albert Carrilero ,  Prantik Mazumder ,  Valerio Pruneri

IPC: C03C15/00 ,  C30B29/60 ,  C30B29/06 ,  C30B29/18 ,  C30B11/12 ,  C01B33/12

Abstract: Provided herein are methods for forming one or more silicon nanostructures, such as silicon nanotubes, and a silica-containing glass substrate. As a result of the process used to prepare the silicon nanostructures, the silica-containing glass substrate comprises one or more nanopillars and the one or more silicon nanostructures extend from the nanopillars of the silica-containing glass substrate. The silicon nanostructures include nanotubes and optionally nanowires. A further aspect is a method for preparing silicon nanostructures on a silica-containing glass substrate. The method includes providing one or more metal nanoparticles on a silica-containing glass substrate and then performing reactive ion etching of the silica-containing glass substrate under conditions that are suitable for the formation of one or more silicon nanostructures.

公开(公告)号：US20200165160A1

公开(公告)日：2020-05-28

申请号：US16776663

申请日：2020-01-30

Applicant: CORNING INCORPORATED

Inventor： Mandakini Kanungo ,  Prantik Mazumder ,  Chukwudi Azubuike Okoro ,  Ah-Young Park ,  Scott Christopher Pollard ,  Rajesh Vaddi

IPC: C03C17/06 ,  C23C18/38 ,  H05K1/03 ,  H01L23/498 ,  H01L23/15 ,  C23C14/18 ,  H01L21/768 ,  H05K1/11 ,  C23C28/02 ,  H05K1/02 ,  C25D7/12

Abstract: According to various embodiments described herein, an article comprises a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length in an axial direction. The article further comprises a helium hermetic adhesion layer disposed on the interior surface; and a metal connector disposed within the via, wherein the metal connector is adhered to the helium hermetic adhesion layer. The metal connector coats the interior surface of the via along the axial length of the via to define a first cavity from the first major surface to a first cavity length, the metal connector comprising a coating thickness of less than 12 μm at the first major surface. Additionally, the metal connector coats the interior surface of the via along the axial length of the via to define a second cavity from the second major surface to a second cavity length, the metal connector comprising a coating thickness of less than 12 μm at the second major surface and fully fills the via between the first cavity and the second cavity.

公开(公告)号：US20200148593A1

公开(公告)日：2020-05-14

申请号：US16666876

申请日：2019-10-29

Applicant: Corning Incorporated

Inventor： Hoon Kim ,  Prantik Mazumder ,  Aram Rezikyan ,  Rajesh Vaddi

IPC: C03C27/04 ,  C03C17/36 ,  C03C17/245

Abstract: In some embodiments, a method comprises: depositing an adhesion layer comprising manganese oxide (MnOx) onto a surface of a glass or glass ceramic substrate; depositing a first layer of conductive metal onto the adhesion layer; and annealing the adhesion layer in a reducing atmosphere. Optionally, the method further comprises pre-annealing the adhesion layer in an oxidizing atmosphere before annealing the adhesion layer in a reducing atmosphere.

公开(公告)号：US10351469B2

公开(公告)日：2019-07-16

申请号：US15656800

申请日：2017-07-21

Applicant: CORNING INCORPORATED

Inventor： Kaveh Adib ,  Robert Alan Bellman ,  Shandon Dee Hart ,  Guangli Hu ,  Robert George Manley ,  Prantik Mazumder ,  Chandan Kumar Saha

IPC: C03C17/34 ,  C03C23/00 ,  B32B17/06 ,  C03C3/083 ,  C03C15/00 ,  C03C21/00 ,  C03C17/245 ,  C03C17/36 ,  G06F3/041 ,  C03C17/22

Abstract: One or more aspects of the disclosure pertain to an article including a film disposed on a glass substrate, which may be strengthened, where the interface between the film and the glass substrate is modified, such that the article has an improved average flexural strength, and the film retains key functional properties for its application. Some key functional properties of the film include optical, electrical and/or mechanical properties. In one or more embodiments, the interface exhibits an effective adhesion energy of about less than about 4 J/m2. In some embodiments, the interface is modified by the inclusion of a crack mitigating layer containing an inorganic material between the glass substrate and the film.

公开(公告)号：US10328372B2

公开(公告)日：2019-06-25

申请号：US14712112

申请日：2015-05-14

Applicant: Corning Incorporated

Inventor： Prantik Mazumder ,  Wageesha Senaratne ,  Ying Wei

IPC: B01D46/00 ,  B01D46/24

Abstract: An air filter article, including: a wall-flow honeycomb particulate filter; and at least one anti-microbial agent on at least a portion of the interior surfaces. The disclosure also provides a filtration system that incorporates or uses the air filter article, and methods for making the air filter article.

公开(公告)号：US10272647B2

公开(公告)日：2019-04-30

申请号：US14968264

申请日：2015-12-14

Applicant: CORNING INCORPORATED

Inventor： Benedict Yorke Johnson ,  Prantik Mazumder ,  Kamal Kishore Soni

IPC: B32B9/00 ,  B32B17/06 ,  B32B18/00 ,  B32B37/00 ,  B32B37/18 ,  B32B38/00 ,  C01B32/194 ,  C23F1/18

Abstract: Described herein are methods for improved transfer of graphene from formation substrates to target substrates. In particular, the methods described herein are useful in the transfer of high-quality chemical vapor deposition-grown monolayers of graphene from metal, e.g., copper, formation substrates via non-polymeric methods. The improved processes provide graphene materials with less defects in the structure.

公开(公告)号：US10086584B2

公开(公告)日：2018-10-02

申请号：US14047506

申请日：2013-10-07

Applicant: Corning Incorporated

Inventor： Robert Alan Bellman ,  Dana Craig Bookbinder ,  Robert George Manley ,  Prantik Mazumder ,  Theresa Chang ,  Jeffrey John Domey ,  Darwin Gene Enicks ,  Vasudha Ravichandran ,  Alan Thomas Stephens, II ,  John Christopher Thomas

IPC: B32B7/12 ,  B32B17/06 ,  C09J5/06 ,  C03C17/00 ,  C03C27/06 ,  B32B7/06

Abstract: Surface modification layers and associated heat treatments, that may be provided on a sheet, a carrier, or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, for example. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing.