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49 条记录 (耗时 0.037 秒)

    INERTIAL SENSOR
    45.
    发明申请
    INERTIAL SENSOR 有权
    惯性传感器

    公开(公告)号：US20130167634A1

    公开(公告)日：2013-07-04

    申请号：US13409039

    申请日：2012-02-29

    申请人： Seung Mo Lim ,  Sung Wook Kim ,  Sung Jun Lee ,  Kyo Yeol Lee ,  Yun Sung Kang

    发明人： Seung Mo Lim ,  Sung Wook Kim ,  Sung Jun Lee ,  Kyo Yeol Lee ,  Yun Sung Kang

    IPC分类号： G01C19/56

    CPC分类号： G01C19/56 ,  G01P15/09 ,  G01P15/14 ,  G01P2015/084

    摘要： Disclosed herein is an inertial sensor. The inertial sensor 100 according to preferred embodiments of the present invention includes: a membrane 110; a mass body 120 disposed under the membrane 110; a piezoelectric body 130 formed on the membrane 110 to drive the mass body 120; and trenches 140 formed by being collapsed in a thickness direction of the piezoelectric body 130 so as to vertically meet a direction in which the mass body 120 is driven. By this configuration, the trenches are formed by being collapsed in a thickness direction of the piezoelectric body 130 to provide directivity while retaining the rigidity of the piezoelectric body 130 to prevent a wave from being propagated in an unnecessary direction, thereby driving the inertial sensor 100 in a desired specific direction.

    摘要翻译： 这里公开了惯性传感器。 根据本发明的优选实施例的惯性传感器100包括：膜110; 设置在膜110下方的质量体120; 形成在膜110上以驱动质量体120的压电体130; 以及通过在压电体130的厚度方向上折叠而形成的沟槽140，以便垂直地与质量体120的驱动方向相遇。 通过这种构造，通过在压电体130的厚度方向上收缩形成沟槽，以提供方向性，同时保持压电体130的刚性，以防止波在不必要的方向上传播，从而驱动惯性传感器100 在所需的特定方向。

    Cantilever-type PLC optical attenuator and manufacturing method thereof
    47.
    发明授权
    Cantilever-type PLC optical attenuator and manufacturing method thereof 失效
    悬臂型PLC光衰减器及其制造方法

    公开(公告)号：US07215869B2

    公开(公告)日：2007-05-08

    申请号：US10911492

    申请日：2004-08-05

    申请人： Sung Jun Lee ,  Yoon Shik Hong ,  Ro Woon Lee ,  Jong Sam Kim

    发明人： Sung Jun Lee ,  Yoon Shik Hong ,  Ro Woon Lee ,  Jong Sam Kim

    IPC分类号： G02B6/26

    CPC分类号： G02B6/266 ,  G02B6/3502 ,  G02B6/3552 ,  G02B6/3572 ,  G02B6/3594

    摘要： Disclosed herein is a cantilever-type PLC optical attenuator. The optical attenuator includes a base substrate made of silicon, an input waveguide, and output waveguide. Front portions of the upper and lower silicon substrates around the output waveguide are thinner than rear portions of the upper and lower silicon substrates around the output waveguide to provide a cantilever part having upper and lower cantilever substrate parts. A first electrode is provided on a bottom of the lower cantilever substrate part, and a second electrode is provided on the base substrate to electromagnetically correspond to the first electrode. When a voltage is applied between the first and second electrodes, the cantilever part moves up and down by an electromagnetic force, thus controlling the output light.

    摘要翻译： 这里公开了一种悬臂型PLC光衰减器。 光衰减器包括由硅制成的基底，输入波导和输出波导。 输出波导周围的上硅衬底和下硅衬底的前部比输出波导周围的上硅衬底和下硅衬底的后部更薄，以提供具有上和下悬臂衬底部件的悬臂部件。 第一电极设置在下悬臂基板部分的底部，并且第二电极设置在基底基板上以与第一电极电磁对应。 当在第一和第二电极之间施加电压时，悬臂部分通过电磁力上下移动，从而控制输出光。

    MEMS structure and method for fabricating the same
    48.
    发明授权
    MEMS structure and method for fabricating the same 失效
    MEMS结构及其制造方法

    公开(公告)号：US07074635B2

    公开(公告)日：2006-07-11

    申请号：US10927459

    申请日：2004-08-27

    申请人： Jong Sam Kim ,  Sung Jun Lee ,  Ro Woon Lee

    发明人： Jong Sam Kim ,  Sung Jun Lee ,  Ro Woon Lee

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00936 ,  B81C2201/0132

    摘要： A MEMS structure includes a floating space formed on the upper silicon layer by a first dry etching, and then dry etched to a predeterminded depth on the lower silicon layer by etching gas supplied through the etched holes from which the oxide film has been removed at the bottom surface thereof in a second dry etching process, so as to float the movable portion; and the oxide film for preventing electrical short circuit remaining on the lower surface of the movable portion so as to correspond to the lower silicon layer leaving the floating space therebetween.

    摘要翻译： MEMS结构包括通过第一干蚀刻在上硅层上形成的浮动空间，然后通过蚀刻通过蚀刻孔提供的气蚀干蚀刻到下硅层上的预制深度 其第二干蚀刻工艺中的底表面浮起可动部分; 以及用于防止可动部分的下表面上的电短路的氧化膜，以便对应于在其间留下浮动空间的下硅层。