公开(公告)号：US20060126231A1

公开(公告)日：2006-06-15

申请号：US11010105

申请日：2004-12-10

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3903 ,  H01L43/10

摘要： In this invention, we replace low resistivity NiFe with high-resistivity FeNi for the FL2 portion of a composite free layer in a CIP GMR sensor in order to minimize current shunting effects while still retaining both magnetic softness and low magnetostriction. A process for manufacturing the device is also described.

摘要翻译： 在本发明中，为了最小化电流分流效应同时保持磁性柔软性和低磁致伸缩性，我们用CIP GMR传感器中的复合自由层的FL2部分代替具有高电阻率FeNi的低电阻率NiFe。 还描述了用于制造该装置的方法。

公开(公告)号：US20060092578A1

公开(公告)日：2006-05-04

申请号：US10977636

申请日：2004-10-29

申请人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

发明人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/12 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.

摘要翻译： 通过将AP1层铺设为两层或更多层来形成具有改善的电压击穿的TMR读取头。 在下一层沉积之前，每个AP1子层在短时间内暴露于低能量等离子体。 这导致在其上沉积隧道势垒层的光滑表面，而不破坏完成的AP1层的表面晶体结构。

公开(公告)号：US20060061916A1

公开(公告)日：2006-03-23

申请号：US11268074

申请日：2005-11-07

申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  C. C. Han

发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  C. C. Han

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.

公开(公告)号：US07950136B2

公开(公告)日：2011-05-31

申请号：US12152058

申请日：2008-05-12

申请人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

发明人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

IPC分类号： G11B5/187 ,  C23F1/12

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/12 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A process to manufacturing a TMR read head with improved voltage breakdown is performed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.

摘要翻译： 通过将AP1层铺设为两层或更多层来进行制造具有改善的电压击穿的TMR读取头的工艺。 在下一层沉积之前，每个AP1子层在短时间内暴露于低能量等离子体。 这导致在其上沉积隧道势垒层的光滑表面，而不破坏完成的AP1层的表面晶体结构。

公开(公告)号：US20100247966A1

公开(公告)日：2010-09-30

申请号：US12802081

申请日：2010-05-28

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/3254 ,  H01F10/3281 ,  H01F10/3295 ,  H01L43/08 ,  Y10T428/1114

摘要： The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

摘要翻译： TMR读取头中的常规自由层已经被两个或更多个磁性层的复合物代替，其中一个是富铁的结果是具有比现有技术的器件更高的MR比的改进的器件，同时仍保持自由层 柔软度和可接受的磁致伸缩。 还描述了用于制造该装置的方法。

公开(公告)号：US07564658B2

公开(公告)日：2009-07-21

申请号：US10948021

申请日：2004-09-23

申请人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Chyu-Jiuh Torng

发明人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Chyu-Jiuh Torng

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B2005/3996

摘要： A GMR spin value structure with improved performance and a method for making the same is disclosed. A key feature is the incorporation of a thin ferromagnetic insertion layer such as a 5 Angstrom thick CoFe layer between a NiCr seed layer and an IrMn AFM layer. Lowering the Ar flow rate to 10 sccm for the NiCr sputter deposition and raising the Ar flow rate to 100 sccm for the IrMn deposition enables the seed layer to be thinned to 25 Angstroms and the AFM layer to about 40 Angstroms. As a result, HEX between the AFM and pinned layers increases by up to 200 Oe while the Tb is maintained at or above 250° C. When the seed/CoFe/AFM configuration is used in a read head sensor, a higher GMR ratio is observed in addition to smaller free layer coercivity (HCF), interlayer coupling (HE), and HK values.

摘要翻译： 公开了具有改进性能的GMR自旋值结构及其制造方法。 一个关键特征是在NiCr种子层和IrMn AFM层之间引入薄铁磁插入层，例如5埃厚的CoFe层。 将Ni流速降低到10sccm，对于IrMn沉积，Ar流速提高到100sccm，使得种子层可以变薄到25埃，AFM层变成约40埃。 结果，AFM和被钉扎层之间的HEX增加高达200Oe，而Tb保持在或超过250℃。当在读头传感器中使用种子/ CoFe / AFM配置时，较高的GMR比率 除了较小的自由层矫顽力（HCF），层间耦合（HE）和HK值之外还观察到。

公开(公告)号：US07377025B2

公开(公告)日：2008-05-27

申请号：US10977636

申请日：2004-10-29

申请人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

发明人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

IPC分类号： G11B5/193 ,  C23C14/48

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/12 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.

摘要翻译： 通过将AP1层铺设为两层或更多层来形成具有改善的电压击穿的TMR读取头。 在下一层沉积之前，每个AP1子层在短时间内暴露于低能量等离子体。 这导致在其上沉积隧道势垒层的光滑表面，而不破坏完成的AP1层的表面晶体结构。

公开(公告)号：US20060164766A1

公开(公告)日：2006-07-27

申请号：US11375323

申请日：2006-03-14

申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Mao-Min Chen

发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Mao-Min Chen

IPC分类号： G11B5/33 ,  B05D5/12 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.

公开(公告)号：US20060061915A1

公开(公告)日：2006-03-23

申请号：US10948021

申请日：2004-09-23

申请人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Chyu-Jiuh Torng

发明人： Kunliang Zhang ,  Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Chyu-Jiuh Torng

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B2005/3996

摘要： A GMR spin value structure with improved performance and a method for making the same is disclosed. A key feature is the incorporation of a thin ferromagnetic insertion layer such as a 5 Angstrom thick CoFe layer between a NiCr seed layer and an IrMn AFM layer. Lowering the Ar flow rate to 10 sccm for the NiCr sputter deposition and raising the Ar flow rate to 100 sccm for the IrMn deposition enables the seed layer to be thinned to 25 Angstroms and the AFM layer to about 40 Angstroms. As a result, HEX between the AFM and pinned layers increases by up to 200 Oe while the Tb is maintained at or above 250° C. When the seed/CoFe/AFM configuration is used in a read head sensor, a higher GMR ratio is observed in addition to smaller free layer coercivity (HCF), interlayer coupling (HE), and HK values.

摘要翻译： 公开了具有改进性能的GMR自旋值结构及其制造方法。 一个关键特征是在NiCr种子层和IrMn AFM层之间引入薄铁磁插入层，例如5埃厚的CoFe层。 将Ni流速降低到10sccm，对于IrMn沉积，Ar流速提高到100sccm，使得种子层可以变薄到25埃，AFM层变成约40埃。 结果，AFM和被钉扎层之间的HEX增加高达200Oe，而Tb保持在或超过250℃。当在读头传感器中使用种子/ CoFe / AFM配置时，较高的GMR比率 观察到除了较小的自由层矫顽力（H SUB CF），层间耦合（H SUB）和HK值之外。

公开(公告)号：US06844999B2

公开(公告)日：2005-01-18

申请号：US10238768

申请日：2002-09-10

申请人： Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Yun-Fei Li

发明人： Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Yun-Fei Li

IPC分类号： G11B5/31 ,  G11B5/39 ,  H01F10/32 ,  H01F41/30 ,  H01L43/10 ,  G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/10

摘要： Prior art gains in GMR ratio resulting from use of NiFeCr as a seed layer were offset by the resulting high values obtained for Hc and Hk. This problem has been overcome by combining a seed layer of NiCr or NiFeCr with a free layer of boron doped CoFe. Additionally, when using a synthetic pinned layer, further improvement is achieved by using boron doped CoFe for the two antiparallel layers.

摘要翻译： 由于使用NiFeCr作为种子层而产生的GMR比例的现有技术增益被所得到的对于Hc和Hk获得的高值抵消。 通过将NiCr或NiFeCr的种子层与掺杂硼的CoFe的自由层组合已经克服了这个问题。 另外，当使用合成钉扎层时，通过使用硼掺杂的CoFe用于两个反向平行层来实现进一步的改进。