公开(公告)号：US07529067B2

公开(公告)日：2009-05-05

申请号：US11375323

申请日：2006-03-14

申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Mao-Min Chen

发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Mao-Min Chen

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.

摘要翻译： 虽然已知交换偏压可用于邻接接头用于纵向稳定化，但是需要相对较大的力矩来有效地将传感器边缘压下。 由于交换偏压对磁性层厚度的反向依赖性，现有技术难以实现大的交换偏压。 通过引入通过与反铁磁层交换而将偏压层的磁矩从上下两端钉住而将偏置层的磁矩大致加倍的结构已经解决了这个问题。 另外，由于反铁磁层直接与自由层接触，所以它直接作用以帮助稳定传感器边缘，这是相对于已经使用的传统静磁钉扎的优点。

公开(公告)号：US20060164766A1

公开(公告)日：2006-07-27

申请号：US11375323

申请日：2006-03-14

申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Mao-Min Chen

发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Mao-Min Chen

IPC分类号： G11B5/33 ,  B05D5/12 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.

公开(公告)号：US07022383B2

公开(公告)日：2006-04-04

申请号：US10277477

申请日：2002-10-22

申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Mao-Min Chen

发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Mao-Min Chen

IPC分类号： B05D3/06 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.

公开(公告)号：US07099125B2

公开(公告)日：2006-08-29

申请号：US11268074

申请日：2005-11-07

申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng Chyi Han

发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng Chyi Han

IPC分类号： G11B5/39 ,  G11B5/147

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.

公开(公告)号：US07035060B2

公开(公告)日：2006-04-25

申请号：US10091959

申请日：2002-03-06

申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.

公开(公告)号：US20050252576A1

公开(公告)日：2005-11-17

申请号：US10846406

申请日：2004-05-14

申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

IPC分类号： H01F10/12 ,  H01F10/32 ,  H01F41/30

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F41/304 ,  Y10T29/49044

摘要： In a conventional spin valve the shunt resistance of the pinning layer reduces the overall efficiency of the device. This problem has been overcome by using IrMn for the pinning layer at a thickness of about 20 Angstroms or less. For the IrMn to be fully effective it must be subjected to a two-step anneal, first in the presence of a high field (about 10 kOe) for several hours and then in a low field (about 500 Oe) while it cools. The result, in addition to improved pinning, is the ability to do testing at the full film and full wafer levels.

摘要翻译： 在传统的自旋阀中，钉扎层的分流电阻降低了器件的整体效率。 通过使用IrMn作为钉扎层的约20埃或更小的厚度已经克服了这个问题。 为了使IrMn完全有效，必须先进行两步退火，首先在高场（约10kOe）存在数小时，然后在低场（约500Oe）的温度下冷却。 结果，除了改进钉扎之外，还可以在整个薄膜和全晶圆级别进行测试。

公开(公告)号：US20060126231A1

公开(公告)日：2006-06-15

申请号：US11010105

申请日：2004-12-10

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3903 ,  H01L43/10

摘要： In this invention, we replace low resistivity NiFe with high-resistivity FeNi for the FL2 portion of a composite free layer in a CIP GMR sensor in order to minimize current shunting effects while still retaining both magnetic softness and low magnetostriction. A process for manufacturing the device is also described.

摘要翻译： 在本发明中，为了最小化电流分流效应同时保持磁性柔软性和低磁致伸缩性，我们用CIP GMR传感器中的复合自由层的FL2部分代替具有高电阻率FeNi的低电阻率NiFe。 还描述了用于制造该装置的方法。

公开(公告)号：US20060061916A1

公开(公告)日：2006-03-23

申请号：US11268074

申请日：2005-11-07

申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  C. C. Han

发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  C. C. Han

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.

公开(公告)号：US07320169B2

公开(公告)日：2008-01-22

申请号：US10846406

申请日：2004-05-14

申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/147

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F41/304 ,  Y10T29/49044

摘要： In a conventional spin valve the shunt resistance of the pinning layer reduces the overall efficiency of the device. This problem has been overcome by using IrMn for the pinning layer at a thickness of about 20 Angstroms or less. For the IrMn to be fully effective it must be subjected to a two-step anneal, first in the presence of a high field (about 10 kOe) for several hours and then in a low field (about 500 Oe) while it cools. The result, in addition to improved pinning, is the ability to do testing at the full film and full wafer levels.

摘要翻译： 在传统的自旋阀中，钉扎层的分流电阻降低了器件的整体效率。 通过使用IrMn作为钉扎层的约20埃或更小的厚度已经克服了这个问题。 为了使IrMn完全有效，必须先进行两步退火，首先在高场（约10kOe）存在数小时，然后在低场（约500Oe）的温度下冷却。 结果，除了改进钉扎之外，还可以在整个薄膜和全晶圆级别进行测试。

公开(公告)号：US06870711B1

公开(公告)日：2005-03-22

申请号：US10863406

申请日：2004-06-08

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/39 ,  Y10T29/49044

摘要： A pinned/pinning layer configuration of the form: AP1/coupling bilayer/AP2/AFM, suitable for use in a CIP or CPP GMR sensor, a TMR sensor or an MRAM element, is found to have improved magnetic stability, yield good values of dR/R and have high values of saturation magnetization that can be adjusted to meet the requirements of magnetic field annealing. The coupling bilayer is a layer of Ru/Rh or their alloys, which provides a wide range of coupling strengths by varying either the thickness of the Ru layer or the Rh layer.

摘要翻译： 发现适用于CIP或CPP GMR传感器，TMR传感器或MRAM元件的AP1 /耦合双层/ AP2 / AFM的钉扎/钉扎层配置具有改善的磁稳定性，产生良好的值 dR / R，并且具有高的饱和磁化值，可以调节以满足磁场退火的要求。 耦合双层是Ru / Rh或其合金层，其通过改变Ru层或Rh层的厚度来提供宽范围的耦合强度。