公开(公告)号：US09665005B2

公开(公告)日：2017-05-30

申请号：US15172228

申请日：2016-06-03

Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

Inventor： Vipul Jain ,  Mingqi Li ,  Huaxing Zhou ,  Jong Keun Park ,  Phillip D. Hustad ,  Jin Wuk Sung

IPC: G03F7/004 ,  G03F7/40 ,  G03F7/16 ,  G03F7/20 ,  C08F293/00 ,  G03F7/00 ,  C09D153/00 ,  H01L21/027 ,  G03F7/039 ,  G03F7/32

CPC classification number: G03F7/165 ,  C08F293/00 ,  C09D153/00 ,  G03F7/002 ,  G03F7/0397 ,  G03F7/168 ,  G03F7/20 ,  G03F7/325 ,  G03F7/40 ,  G03F7/405 ,  H01L21/0274

Abstract: Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a block copolymer and a solvent, wherein the block copolymer comprises a first block and a second block, wherein the first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and an aromatic group, provided that the second monomer is not styrene; and (c) rinsing residual pattern treatment composition from the substrate, leaving a portion of the block copolymer bonded to the patterned feature. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

公开(公告)号：US20160357111A1

公开(公告)日：2016-12-08

申请号：US15172260

申请日：2016-06-03

Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

Inventor： Vipul Jain ,  Mingqi Li ,  Huaxing Zhou ,  Jong Keun Park ,  Phillip D. Hustad ,  Jin Wuk Sung

IPC: G03F7/40

CPC classification number: G03F7/405 ,  C08F293/00 ,  C09D153/00 ,  G03F7/002 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/165 ,  G03F7/168 ,  G03F7/20 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0274

Abstract: Pattern treatment compositions comprise a block copolymer and an organic solvent. The block copolymer comprises a first block and a second block. The first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group. The second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and a cyclic aliphatic group. Wherein: (i) the second block comprises a unit formed from a third monomer comprising an ethylenically unsaturated polymerizable group, and the second monomer and the third monomer are different; and/or (ii) the block copolymer comprises a third block comprising a unit formed from a fourth monomer comprising an ethylenically unsaturated polymerizable group, wherein the fourth monomer is different from the first monomer and the second monomer. Also provided are pattern treatment methods using the described compositions. The pattern treatment compositions and methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

Abstract translation: 图案处理组合物包含嵌段共聚物和有机溶剂。 嵌段共聚物包括第一嵌段和第二嵌段。 第一块包括由包含烯键式不饱和可聚合基团和氢受体基团的第一单体形成的单元，其中氢受体基团是含氮基团。 第二块包括由包含烯键式不饱和可聚合基团和环状脂肪族基团的第二单体形成的单元。 （i）第二块包含由包含烯键式不饱和可聚合基团的第三单体形成的单元，第二单体和第三单体不同; 和/或（ii）嵌段共聚物包括第三嵌段，其包含由包含烯键式不饱和可聚合基团的第四单体形成的单元，其中第四单体不同于第一单体和第二单体。 还提供了使用所述组合物的图案处理方法。 图案处理组合物和方法在用于提供高分辨率图案的半导体器件的制造中具有特别的适用性。

公开(公告)号：US09448483B2

公开(公告)日：2016-09-20

申请号：US14726238

申请日：2015-05-29

Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

Inventor： Phillip D. Hustad ,  Jong Keun Park ,  Jin Wuk Sung ,  James Heejun Park

IPC: H01L21/31 ,  G03F7/32 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027

CPC classification number: G03F7/325 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0276

Abstract: Pattern shrink methods comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) providing a resist pattern over the one or more layers to be patterned; (c) coating a shrink composition over the pattern, wherein the shrink composition comprises a polymer and an organic solvent, wherein the polymer comprises a group containing a hydrogen acceptor effective to form a bond with an acid group and/or an alcohol group at a surface of the resist pattern, and wherein the composition is free of crosslinkers; and (d) rinsing residual shrink composition from the substrate, leaving a portion of the polymer bonded to the resist pattern. Also provided are pattern shrink compositions, and coated substrates and electronic devices formed by the methods. The invention find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

Abstract translation: 图案收缩方法包括：（a）提供包括一个或多个待图案化层的半导体衬底; （b）在待图案化的一层或多层上提供抗蚀剂图案; （c）在所述图案上涂覆收缩组合物，其中所述收缩组合物包含聚合物和有机溶剂，其中所述聚合物包含含有有效与酸基团和/或醇基键键合的氢受体的基团 抗蚀剂图案的表面，并且其中所述组合物不含交联剂; 和（d）从基材漂洗残余收缩组合物，使一部分聚合物结合到抗蚀剂图案上。 还提供了图案收缩组合物，以及通过该方法形成的涂覆的基材和电子装置。 本发明特别适用于制造用于提供高分辨率图案的半导体器件。

公开(公告)号：US09394411B2

公开(公告)日：2016-07-19

申请号：US14580300

申请日：2014-12-23

Applicant: Dow Global Technologies LLC ,  ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Shih-Wei Chang ,  Jong Keun Park ,  John W. Kramer ,  Erin B. Vogel ,  Phillip D. Hustad ,  Peter Trefonas, III

IPC: C08G77/442 ,  B29C71/00 ,  B29C71/02 ,  B29C59/14 ,  B81C1/00 ,  G03F7/00 ,  B29C59/02

CPC classification number: C08G77/442 ,  B29C59/14 ,  B29C71/0009 ,  B29C71/02 ,  B29C2059/023 ,  B29C2071/022 ,  B81C1/00 ,  G03F7/0002

Abstract: Disclosed herein is a block copolymer comprising a first block derived from a vinyl aromatic monomer; where the vinyl aromatic monomer has at least one alkyl substitution on an aromatic ring; a second block derived from a siloxane monomer; where a chi parameter that measures interactions between the first block and the second block is 0.03 to 0.18 at a temperature of 200° C. Disclosed herein is a method comprising polymerizing a vinyl aromatic monomer to form a first block; and polymerizing a second block onto the first block to form a block copolymer; where the second block is derived by polymerizing a siloxane monomer; and where the block copolymer has a chi parameter of 0.03 to 0.18 at a temperature of 200° C.; where the chi parameter is a measure of interactions between the first block and the second block of the copolymer.

Abstract translation: 本文公开了包含衍生自乙烯基芳族单体的第一嵌段的嵌段共聚物; 其中乙烯基芳族单体在芳环上具有至少一个烷基取代; 衍生自硅氧烷单体的第二嵌段; 其中测量第一块和第二嵌段之间的相互作用的chi参数在200℃的温度下为0.03至0.18。本文公开了一种方法，其包括聚合乙烯基芳族单体以形成第一嵌段; 并将第二嵌段聚合到所述第一嵌段上以形成嵌段共聚物; 其中第二嵌段通过聚合硅氧烷单体得到; 嵌段共聚物在200℃的温度下的chi参数为0.03〜0.18。 其中chi参数是共聚物的第一嵌段和第二嵌段之间相互作用的量度。

公开(公告)号：US09382444B2

公开(公告)日：2016-07-05

申请号：US14297095

申请日：2014-06-05

Applicant: Dow Global Technologies LLC ,  ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Peter Trefonas, III ,  Phillip D. Hustad ,  Deyan Wang ,  Rahul Sharma ,  Mingqi Li ,  Jieqian J. Zhang

IPC: C08L53/00 ,  C09D153/00 ,  C08F293/00 ,  B81C1/00 ,  G03F7/00 ,  C08L83/10 ,  C08G77/442

CPC classification number: C09D153/00 ,  B81C1/00031 ,  B81C2201/0149 ,  C08F293/005 ,  C08F2438/03 ,  C08G77/442 ,  C08L53/00 ,  C08L83/10 ,  G03F7/0002 ,  C08L33/12

Abstract: Disclosed herein is a block copolymer comprising a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and an additive copolymer; where the additive copolymer comprises a surface free energy reducing moiety where the surface free energy reducing moiety has a lower surface free energy than that of the first segment and the second segment; the additive copolymer further comprising one or more moieties having an affinity to the block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment; where the additive copolymer is not water miscible; and where the additive copolymer is not covalently bonded with the block copolymer.

Abstract translation: 本文公开了一种嵌段共聚物，其包含彼此共价键合并且在化学上彼此不同的第一链段和第二链段; 其中所述第一段具有第一表面自由能，并且其中所述第二段具有第二表面自由能; 和添加剂共聚物; 其中所述添加剂共聚物包含表面自由能减少部分，其中所述表面自由能减少部分具有比所述第一部分和所述第二部分更低的表面自由能; 所述添加剂共聚物还包含对所述嵌段共聚物具有亲和性的一个或多个部分; 其中表面自由能减少部分在化学上不同于第一段和第二段; 其中所述添加剂共聚物不是水混溶的; 并且其中所述添加剂共聚物不与嵌段共聚物共价键合。

公开(公告)号：US20150376454A1

公开(公告)日：2015-12-31

申请号：US14745548

申请日：2015-06-22

Applicant: DOW GLOBAL TECHNOLOGIES LLC ,  ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Jieqian Zhang ,  Phillip D. Hustad ,  Peter Trefonas, III ,  Mingqi Li ,  Valeriy V. Ginzburg ,  Jeffrey D. Weinhold

IPC: C09D183/10

CPC classification number: C09D183/10 ,  C08G77/442 ,  C08L83/10

Abstract: Disclosed herein is an article comprising a substrate; upon which is disposed a composition comprising: a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the first and the second block copolymer have a chi parameter greater than 0.04 at a temperature of 200° C.

Abstract translation: 本文公开了包含基材的制品; 在其上设置组合物，其包含：第一嵌段共聚物，其包含第一嵌段和第二嵌段; 其中第一块具有比第二块更高的表面能; 第二嵌段共聚物，其包含第一嵌段和第二嵌段; 其中第一嵌段共聚物的第一嵌段与第二嵌段共聚物的第一嵌段化学相同或类似，第一嵌段共聚物的第二嵌段化学上与第二嵌段共聚物的第二嵌段相同或相似 ; 其中第一和第二嵌段共聚物在200℃的温度下具有大于0.04的chi参数。

公开(公告)号：US20150132921A1

公开(公告)日：2015-05-14

申请号：US14542428

申请日：2014-11-14

Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

Inventor： Jong Keun PARK ,  Cheng-Bai XU ,  Phillip D. Hustad ,  Mingqi LI

IPC: H01L21/762

CPC classification number: H01L21/76224

Abstract: Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a self-crosslinkable polymer and a solvent, wherein the self-crosslinkable polymer comprises a first unit comprising a polymerized backbone and a crosslinkable group pendant to the backbone; and (c) heating the gap-fill composition at a temperature to cause the polymer to self-crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.

Abstract translation: 提供间隙填充方法。 所述方法包括：（a）提供在衬底的表面上具有浮雕图像的半导体衬底，所述浮雕图像包括要填充的多个间隙; （b）在所述浮雕图像上施加间隙填充组合物，其中所述间隙填充组合物包含自交联聚合物和溶剂，其中所述自交联聚合物包含第一单元，所述第一单元包含聚合主链和可交联基团， 骨干 和（c）在温度下加热间隙填充组合物以使聚合物自交联。 该方法在用于填充高纵横比间隙的半导体器件的制造中具有特别的适用性。

公开(公告)号：US20140377465A1

公开(公告)日：2014-12-25

申请号：US13924891

申请日：2013-06-24

Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

Inventor： Peter Trefonas, III ,  Phillip D. Hustad ,  Deyan Wang ,  Rahul Sharma ,  Mingqi Li

IPC: C08L53/00 ,  B05D3/00

CPC classification number: C08L53/00 ,  B05D1/185 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: Disclosed herein is a block copolymer comprising a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and an additive copolymer; where the additive copolymer comprises a surface free energy reducing moiety where the surface free energy reducing moiety has a lower surface free energy than that of the first segment and the second segment; the additive copolymer further comprising one or more moieties having an affinity to the block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment; where the additive copolymer is not water miscible; and where the additive copolymer is not covalently bonded with the block copolymer.

Abstract translation: 本文公开了一种嵌段共聚物，其包含彼此共价键合并且在化学上彼此不同的第一链段和第二链段; 其中所述第一段具有第一表面自由能，并且其中所述第二段具有第二表面自由能; 和添加剂共聚物; 其中所述添加剂共聚物包含表面自由能减少部分，其中所述表面自由能减少部分具有比所述第一部分和所述第二部分更低的表面自由能; 所述添加剂共聚物还包含对所述嵌段共聚物具有亲和性的一个或多个部分; 其中表面自由能减少部分在化学上不同于第一段和第二段; 其中所述添加剂共聚物不是水混溶的; 并且其中所述添加剂共聚物不与嵌段共聚物共价键合。

公开(公告)号：US08759453B2

公开(公告)日：2014-06-24

申请号：US13667149

申请日：2012-11-02

Applicant: Dow Global Technologies LLC

Inventor： Thomas P. Clark ,  Nahrain E. Kambler ,  Sara B. Klamo ,  Phillip D. Hustad ,  David R. Wilson

IPC: C08F8/00 ,  C08F8/06 ,  C08F8/30 ,  C08F8/34 ,  C08F8/40

CPC classification number: C08F2/38 ,  C08F10/00 ,  C08F10/14 ,  H01M2/1653 ,  H01M10/0525 ,  H01M10/4235 ,  C08F4/64113

Abstract: The invention generally relates to chain shuttling agents (CSAs), a process of preparing the CSAs, a composition comprising a CSA and a catalyst, a process of preparing the composition, a processes of preparing polyolefins, end functional polyolefins, and telechelic polyolefins with the composition, and the polyolefins, end functional polyolefins, and telechelic polyolefins prepared by the processes.

Abstract translation: 本发明通常涉及链穿梭剂（CSA），制备CSA的方法，包含CSA和催化剂的组合物，制备组合物的方法，制备聚烯烃，末端官能聚烯烃和遥爪聚烯烃的方法，其中 组合物，以及通过该方法制备的聚烯烃，末端官能聚烯烃和遥爪聚烯烃。

公开(公告)号：US20240010779A1

公开(公告)日：2024-01-11

申请号：US18254956

申请日：2021-12-16

Applicant: Dow Global Technologies LLC ,  Northwestern University

Inventor： Evelyn Auyeung ,  Rhett A. Baillie ,  Thomas Wesley Karjala, JR. ,  Zhe Zhou ,  Jeffrey C. Munro ,  Colin Li Pi Shan ,  Phillip D. Hustad ,  Tobin J. Marks ,  Yanshan Gao

IPC: C08F297/08

CPC classification number: C08F297/083

Abstract: A process to form a composition comprising an ethylene/vinylarene multiblock interpolymer, said process comprising polymerizing, in a single reactor, a mixture comprising ethylene, a vinylarene, and optionally an alpha-olefin, in the presence of at least the following a)-c): a) a first metal complex selected from the following Formula (A), as described herein: b) a second metal complex selected from the following Formula (B), as described herein, and c) a chain shuttling agent selected from the following: a dialkyl zinc, a trialkyl aluminum, or a combination thereof. A composition comprising an ethylene/vinylarene multiblock interpolymer comprising at least one polymer structure selected from: -(AR)-(AP)-(AR)-(AP)- (Structure 1), or (AR)-(AP)-(AR)-(AP) (Structure 2); where each (AR) segment independently comprises, in polymerized form, ethylene, >10 mol % of the vinylarene and optionally an alpha-olefin, and wherein each (AP) segment independently comprises, ethylene, optionally ≤10 mol % vinylarene and optionally the alpha-olefin.