摘要:
An image sensor includes a plurality of vertical CCDs; first HCCD receiving charge packets from even numbered vertical CCDs; and a second HCCD receiving charge packets from odd numbered vertical CCDs; wherein four charge packets are summed together from the first HCCD, and four charge packets are summed together in the second HCCD such that the summing process in the second HCCD begins one or two charge packets spatially after the first charge packet of the four charge packets summed in the first HCCD.
摘要:
A method for reducing dark current within a charge-coupled device, the method includes each gate phase n having a capacitance Cn, voltage change on the gate phase n given by ΔVn such ∑ n C n Δ V n ≅ 0 ; for the first time period, maintaining a set of first gate phases holding charge in the accumulated state and maintaining a set of second gate phases not holding charge in the depleted state; for a second time period, clocking the charge into a set of third gate phases in the depleted state and clocking the second set of gate phases not holding charge into the accumulated state; for a third time period, clocking the third set of gate phases holding the charge into the accumulated state and clocking a fourth set of gates not holding the charge into the depletion state; wherein the second time period is shorter than the first and third time periods.
摘要翻译:一种用于减小电荷耦合器件内的暗电流的方法,该方法包括:具有电容Cn的每个栅极相n,由DeltaVn给出的栅极相位n上的电压变化,例如Delta nv V n≅0; 在第一时间段中,保持一组第一栅极相位保持处于累积状态的电荷并保持一组不保持电荷的第二栅极相位在耗尽状态; 在第二时间段中,将电荷计时到耗尽状态的一组第三栅极相位,并且将不保持电荷的第二组栅极相位计时到累积状态; 在第三时间段中,将保持电荷的第三组栅极相位计时到累积状态,并将不保持电荷的第四组栅极计时到耗尽状态; 其中所述第二时间段比所述第一和第三时间段短。
摘要:
A photo sensing region is included within each pixel in a pixel array. Each photo sensing region collects photo-generated charge. A transfer region is positioned between each photo sensing region and a respective charge coupled device. A charge-coupled device receives charge from each column of pixels in the pixel array. Each charge-coupled device includes one or more barriers for causing the transfer of the charge through the charge-coupled device. Each transfer region includes a barrier that is lower than the one or more barriers in the charge-coupled device so that excess charge in the charge-coupled device flows into the photo sensing region.
摘要:
An image sensor that includes a plurality of pixels disposed on a substrate, each pixel includes at least one photosensitive region that collects charges in response to incident light; a charge-to-voltage conversion node for sensing the charge from the at least one photosensitive region and converting the charge to a voltage; an amplifier transistor having a source connected to an output node, having a gate connected to the charge-to-voltage conversion node and having a drain connected to at least a portion of a power supply node; and a reset transistor connecting the output node and the charge-to-voltage conversion node.
摘要:
A method for reading out charge from an interlined CCD having a plurality of photo-sensing regions and a plurality of vertical shift registers, and each photosensitive region is mated respectively to a CCD of a vertical shift register and a color filter having a repeating pattern of two rows in which each row includes at least two colors spanning the photo-sensing regions, the method includes reading out one row from each of the two row pattern; summing the same color from each row in the vertical shift register to reduce the resolution by one half; without transferring charge out of the vertical shift register, repeating the reading and summing steps for the remaining row; and reading out the charge in the vertical shift registers in a manner in which different colors are not summed together.
摘要:
A charge coupled device includes a substrate; a plurality of image pixels arranged in a two dimensional array in the substrate for capturing an electronic representation of an image and for transferring charge in a first direction; a transfer mechanism for transferring charge in a second direction from the plurality of the image pixels for further processing; an amplifier structure disposed in the substrate that receives the charge from the transfer mechanism and converts the charge into a voltage signal; a first opaque layer spanning over the amplifier for blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied; and a second opaque layer deposited into the substrate for also blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied.
摘要:
The present invention broadly relates to the synergistic attenuation of vesicular stomatitis virus (VSV). More particularly, the invention relates to the identification of combined mutation classes which synergistically attenuate the pathogenicity of VSV vectors in mammals and immunogenic compositions thereof.
摘要:
An interconnect structure of the single or dual damascene type and a method of forming the same, which substantially reduces the surface oxidation problem of plating a conductive material onto a noble metal seed layer are provided. In accordance with the present invention, a hydrogen plasma treatment is used to treat a noble metal seed layer such that the treated noble metal seed layer is highly resistant to surface oxidation. The inventive oxidation-resistant noble metal seed layer has a low C content and/or a low nitrogen content.
摘要:
A method for reading out charge from an interlined CCD having a plurality of photo-sensing regions and a plurality of vertical shift registers, and each photosensitive region is mated respectively to a CCD of a vertical shift register and a color filter having a repeating pattern of two rows in which each row includes at least two colors spanning the photo-sensing regions, the method includes reading out one row from each of the two row pattern; summing the same color from each row in the vertical shift register to reduce the resolution by one half; without transferring charge out of the vertical shift register, repeating the reading and summing steps for the remaining row; and reading out the charge in the vertical shift registers in a manner in which different colors are not summed together.
摘要:
An image sensor includes a substrate of the first conductivity type; a channel of the first conductivity type that spans at least a portion of the substrate; a well of the second conductivity type that is positioned between the channel and substrate for a predetermined portion and that is not between the substrate and the channel for a predetermined portion all of which well is substantially continuous; and a connection to the well; wherein a resistance of the well not between the substrate and the channel is substantially equal to or greater than twenty five percent of a total resistance of the well between the channel and the substrate.