公开(公告)号：US07464584B2

公开(公告)日：2008-12-16

申请号：US11526689

申请日：2006-09-26

申请人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： G01B5/28

CPC分类号： G11B9/02 ,  G01Q10/06 ,  G01Q70/08 ,  G01Q80/00

摘要： A semiconductor probe and a method of writing and reading information using the same. The semiconductor probe includes a cantilever and a tip formed on an end portion of the cantilever to write or read information on or from a ferroelectric medium on a surface of which an electrode is formed. The tip includes a resistive region lightly doped with semiconductor impurities and a conductive region heavily doped with the semiconductor impurities. The cantilever includes an electrostatic force generation electrode formed on a bottom surface facing the medium. A contact force between the tip and the medium is adjusted by selectively applying a voltage between the electrode formed on the ferroelectric medium and the electrostatic force generation electrode.

摘要翻译： 半导体探针和使用其的信息的写入和读取方法。 半导体探针包括形成在悬臂的端部上的悬臂和尖端，以在其上形成有电极的表面上写入或读取铁电介质上的信息。 尖端包括轻掺杂半导体杂质的电阻区域和重掺杂半导体杂质的导电区域。 悬臂包括形成在面向介质的底面上的静电力产生电极。 通过在形成在铁电介质上的电极和静电力产生电极之间选择性地施加电压来调节尖端和介质之间的接触力。

公开(公告)号：US20060092817A1

公开(公告)日：2006-05-04

申请号：US11261612

申请日：2005-10-31

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park ,  Chul-min Park ,  Kyoung-Iock Baeck

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park ,  Chul-min Park ,  Kyoung-Iock Baeck

IPC分类号： G11B9/00

CPC分类号： B82Y10/00 ,  G11B9/02 ,  G11B9/1409 ,  G11B9/1472

摘要： Provided is a ferroelectric recording medium including a ferroelectric recording layer formed of a polarization reversal ferroelectric material and an anisotropic conduction layer that covers the ferroelectric recording layer and changes into a conductor or a non-conductor based on external energy.

摘要翻译： 本发明提供一种铁电记录介质，其特征在于，具备由极化反转铁电材料形成的铁电体记录层和覆盖所述强电介质层的各向异性导电层，并且能够基于外部能量而变为导体或非导体。

公开(公告)号：US20060057757A1

公开(公告)日：2006-03-16

申请号：US11212605

申请日：2005-08-29

申请人： Chul-min Park ,  Hong-sik Park ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Chul-min Park ,  Hong-sik Park ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L21/38

CPC分类号： G01Q70/10 ,  G01Q70/16

摘要： A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.

摘要翻译： 一种制造具有电阻尖端的半导体探针的方法。 该方法包括在硅衬底上形成具有矩形形状的第一和第二掩模膜，首先蚀刻硅衬底的上表面，通过蚀刻第一掩模膜形成与尖端颈部的宽度相对应的第三掩模膜，形成 通过使用第三掩模膜作为掩模对硅衬底进行第二次蚀刻，使尖端颈部的宽度达到预定宽度，并且在除去第三掩模膜之后通过退火硅衬底来形成尖端的峰形成部分。 可以制造具有均匀高度的半导体探针和具有均匀颈部宽度的尖端。

公开(公告)号：US07889628B2

公开(公告)日：2011-02-15

申请号：US12128788

申请日：2008-05-29

申请人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

发明人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

IPC分类号： G11B7/00

CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

公开(公告)号：US07888718B2

公开(公告)日：2011-02-15

申请号：US10996057

申请日：2004-11-24

申请人： Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

发明人： Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

IPC分类号： H01L21/02

CPC分类号： H01L27/11502 ,  G11B9/02 ,  G11C11/22

摘要： An information storage medium in which charges and electric dipoles are coupled with one another. The information storage medium includes a substrate, an electrode layer formed on the substrate, a ferroelectric layer formed on the electrode layer, and an insulating layer formed on the ferroelectric layer. Accordingly, it is possible to stably record information on the information storage medium.

摘要翻译： 一种信息存储介质，其中电荷和电偶极子彼此耦合。 信息存储介质包括基板，形成在基板上的电极层，形成在电极层上的铁电层，以及形成在铁电层上的绝缘层。 因此，可以将信息稳定地记录在信息存储介质上。

公开(公告)号：US20080030909A1

公开(公告)日：2008-02-07

申请号：US11723567

申请日：2007-03-21

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Yong-su Kim ,  Seung-bum Hong ,  Hong-sik Park

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Yong-su Kim ,  Seung-bum Hong ,  Hong-sik Park

IPC分类号： G11B5/33 ,  G11B5/127 ,  G11B5/82

CPC分类号： G11B9/02 ,  Y10T29/49032

摘要： An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.

摘要翻译： 提供电场读/写头，其制造方法以及包括电场读/写头的数据读/写装置。 数据读/写装置包括从记录介质读取和写入数据的电场读/写头。 电场读/写头包括半导体衬底，电阻区，源极和漏极区以及写入电极。 半导体衬底包括具有相邻边缘的第一表面和第二表面。 电阻区域形成为从第一表面的一端的中心部分延伸到第二表面。 源极区域和漏极区域形成在电阻区域的两侧并且与第一表面分离。 写电极形成在电阻区上，绝缘层位于写电极和电阻区之间。

公开(公告)号：US07994499B2

公开(公告)日：2011-08-09

申请号：US11750404

申请日：2007-05-18

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park ,  Chul-min Park

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park ,  Chul-min Park

IPC分类号： H01L21/00

CPC分类号： G01Q60/30 ,  G01Q60/40

摘要： A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposite polarity to the first impurity, and has first and second semiconductor electrode regions doped with a high concentration of the second impurity on both side slopes of the resistive tip. The probe also includes a cantilever having the resistive tip on an edge portion thereof, and an end portion of the resistive tip has a wedge shape.

摘要翻译： 提供具有楔形电阻端头的半导体探针和制造半导体探针的方法。 半导体探针包括掺杂有第一杂质的电阻尖端，具有掺杂有与第一杂质具有相反极性的低浓度第二杂质的电阻区域，并且具有掺杂高浓度的第一和第二半导体电极区域 的第二杂质在电阻尖端的两个侧面上。 探针还包括在其边缘部分具有电阻尖端的悬臂，并且电阻尖端的端部具有楔形。

公开(公告)号：US20060175644A1

公开(公告)日：2006-08-10

申请号：US11348485

申请日：2006-02-07

申请人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

发明人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

IPC分类号： H01L29/94

CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

公开(公告)号：US20050133841A1

公开(公告)日：2005-06-23

申请号：US10996057

申请日：2004-11-24

申请人： Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

发明人： Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

IPC分类号： G11B9/02 ,  G11B9/14 ,  G11C11/22 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

CPC分类号： H01L27/11502 ,  G11B9/02 ,  G11C11/22

摘要： An information storage medium in which charges and electric dipoles are coupled with one another. The information storage medium includes a substrate, an electrode layer formed on the substrate, a ferroelectric layer formed on the electrode layer, and an insulating layer formed on the ferroelectric layer. Accordingly, it is possible to stably record information on the information storage medium.

摘要翻译： 一种信息存储介质，其中电荷和电偶极子彼此耦合。 信息存储介质包括基板，形成在基板上的电极层，形成在电极层上的铁电层，以及形成在铁电层上的绝缘层。 因此，可以将信息稳定地记录在信息存储介质上。

公开(公告)号：US08432001B2

公开(公告)日：2013-04-30

申请号：US12300177

申请日：2007-05-10

申请人： Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Yong-su Kim ,  Seung-bum Hong

发明人： Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Yong-su Kim ,  Seung-bum Hong

IPC分类号： H01L29/94 ,  H01L21/00

CPC分类号： G11B9/02

摘要： Provided is an electric field information reading head for reading information from a surface electric charge of an information storage medium, the electric field information reading head comprising a semiconductor substrate having a resistance region formed in a central part at one end of a surface facing a recording medium, the resistance region being lightly doped with impurities, and source and drain regions formed on both sides of the resistance region, the source region and the drain region being more highly doped with impurities than the resistance region. The source region and the drain region extend along the surface of the semiconductor substrate facing the recording medium, and electrodes are connected electrically with the source region and the drain region respectively. In addition, provided is a method of fabricating the electric field information reading head and a method of mass-producing the electric field information reading head on a wafer.

摘要翻译： 提供一种用于从信息存储介质的表面电荷读取信息的电场信息读取头，电场信息读取头包括半导体衬底，该半导体衬底具有形成在面向记录的表面的一端的中心部分的电阻区域 介质，电阻区域被轻掺杂杂质，形成在电阻区两侧的源区和漏区，源极区和漏区比电阻区更加掺杂杂质。 源极区域和漏极区域沿着面向记录介质的半导体衬底的表面延伸，并且电极分别与源极区域和漏极区域电连接。 此外，提供了制造电场信息读取头的方法和在晶片上批量生成电场信息读取头的方法。