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41.发明申请公开(公告)号：US20220326184A1
公开(公告)日：2022-10-13
申请号：US17848410
申请日：2022-06-24
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA
IPC: G01N29/036 , G01N1/14
Abstract: The present invention provides a management method, a measuring method, a measuring device, a crystal oscillator sensor and a set for more easily managing the purity of a chemical liquid containing an organic solvent. The management method of the present invention is a management method of managing a purity of a chemical liquid containing an organic solvent by sensing impurities in the chemical liquid. The management method includes Step 1 of preparing a target chemical liquid containing an organic solvent; Step 2 of bringing the target chemical liquid into contact with a crystal oscillator sensor including an adsorption layer that adsorbs the impurities and a crystal oscillator and obtaining an amount of change in a resonance frequency of the crystal oscillator resulting from contact of the target chemical liquid; and Step 3 of managing the purity of the chemical liquid by comparing whether or not the obtained amount of change in the resonance frequency falls within a permissible range of the amount of change in the resonance frequency based on a preset purity of the target chemical liquid. In Step 2, at least a part of a liquid contact portion coming into contact with the target chemical liquid is made of a fluorine-based resin.
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公开(公告)号：US20220325208A1
公开(公告)日：2022-10-13
申请号：US17848971
申请日：2022-06-24
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA
IPC: C11D11/00 , C11D1/37 , C11D3/30 , C11D3/36 , C11D3/20 , C11D3/34 , C11D3/33 , C11D3/22 , C11D3/28 , H01L21/02
Abstract: The present invention provides: a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in temporal stability and cleaning performance; and a method of cleaning such semiconductor substrates. A cleaning liquid of the invention contains: a first amine compound which is represented by Formula (1) and whose conjugated acid has a first acidity constant of not less than 8.5; and a second amine compound (provided that the first amine compound is excluded). The mass ratio of the first amine compound content to the second amine compound content is 1 to 100, and the cleaning liquid has pH of 6.0-12.0 at 25° C.
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公开(公告)号：US20220064490A1
公开(公告)日：2022-03-03
申请号：US17524684
申请日：2021-11-11
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA
IPC: C09G1/02 , C09K3/14 , H01L21/304 , C09G1/04
Abstract: The present invention provides a polishing liquid which reduces the occurrence of dishing and erosion on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished, and makes it possible to manufacture a semiconductor product having excellent reliability. The present invention also provides a chemical mechanical polishing method using the polishing liquid. The polishing liquid of an embodiment of the present invention is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, and includes a colloidal silica, an organic acid, a passivation film forming agent, an anionic surfactant; hydrogen peroxide; potassium; and sodium, in which a value of a difference obtained by subtracting the C log P value of the passivation film forming agent from the C log P value of the anionic surfactant is more than 2.00 and less than 8.00, a mass ratio of a content of potassium to a content of sodium is 1×106 to 1×109, and the pH is 8.0 to 10.5.
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公开(公告)号：US20210405535A1
公开(公告)日：2021-12-30
申请号：US17465834
申请日：2021-09-02
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA , Yukihisa Kawada , Masahiro Yoshidome
IPC: G03F7/40 , G03F7/32 , H01L21/027
Abstract: An object of the present invention is to provide a resist pattern forming method that has excellent pattern forming properties and generates few residues and a semiconductor chip manufacturing method. The resist pattern forming method according to an embodiment of the present invention has a step A of forming a film on a substrate by using an actinic ray-sensitive or radiation-sensitive resin composition containing a photoacid generator and a resin whose polarity is increased by the action of an acid, a step B of exposing the film, step C of developing the exposed film by using an alkali developer, a step D of washing the developed film by using water, and a step E of washing the film washed in the step D by using a chemical liquid containing an alcohol-based solvent, in which the alkali developer contains a quaternary ammonium salt.
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公开(公告)号：US20210373439A1
公开(公告)日：2021-12-02
申请号：US17401347
申请日：2021-08-13
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA
Abstract: The present invention provides a chemical liquid demonstrating excellent defect inhibition performance in a case where the chemical liquid is used as a prewet solution. The present invention also provides a resist pattern forming method, a semiconductor chip manufacturing method, a chemical liquid storage body, and a chemical liquid manufacturing method. The chemical liquid according to an embodiment of the present invention is a chemical liquid to be used as a prewet solution and contains cyclohexanone and one or more kinds of first compounds selected from the group consisting of a compound represented by General Formula (1), a compound represented by General Formula (2), and a compound represented by General Formula (3), in which a content of the cyclohexanone is 98.000% to 99.999% by mass with respect to a total mass of the chemical liquid, and a total content of the first compounds is 0.001 to 100 ppm by mass with respect to the total mass of the chemical liquid.
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Patent Agency Ranking
公开(公告)号：US20210139231A1
公开(公告)日：2021-05-13
申请号：US17139045
申请日：2020-12-31
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA , Satomi TAKAHASHI , Tadashi OOMATSU , Tetsuya SHIMIZU
Abstract: The present invention provides a chemical liquid having excellent defect suppressing properties. The present invention further provides a chemical liquid storage body containing the chemical liquid. The chemical liquid of the present invention is a chemical liquid containing a compound other than an alkane and an alkene, and one or more organic solvents selected from the group consisting of decane and undecane, in which the chemical liquid further contains one or more organic components selected from the group consisting of alkanes having 12 to 50 carbon atoms and alkenes having 12 to 50 carbon atoms, and a content of the organic component is 0.10 to 1,000,000 mass ppt with respect to a total mass of the chemical liquid.
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公开(公告)号：US20200368692A1
公开(公告)日：2020-11-26
申请号：US16991225
申请日：2020-08-12
Applicant: FUJIFILM Corporation
Inventor： Tetsuya SHIMIZU , Tetsuya KAMIMURA , Tadashi OMATSU , Satomi TAKAHASHI
IPC: B01D61/58 , B01D65/02 , B01D61/18 , B01D61/08 , B01D69/02 , B01D69/12 , B01D71/36 , B01D71/26 , B01D71/56 , B01D3/14 , H01L21/67
Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified, and has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series between the inlet portion and the outlet portion and extends from the inlet portion to the outlet portion, in which the filter A includes at least one kind of porous membrane selected from the group consisting of a first porous membrane having a porous base material made of polytetrafluoroethylene and a non-crosslinked coating which is formed to cover the porous base material and contains a perfluorosulfonic acid polymer and a second porous membrane containing polytetrafluoroethylene blended with a perfluorosulfonic acid polymer.
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公开(公告)号：US20200347268A1
公开(公告)日：2020-11-05
申请号：US16936526
申请日：2020-07-23
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA
IPC: C09G1/02 , C09G1/18 , C09G1/16 , H01L21/306 , H01L21/3105
Abstract: A polishing liquid is used for chemical mechanical polishing and includes colloidal silica; and an onium salt containing a cation, in which a content of the onium salt is more than 0.01% by mass, a zeta potential of the colloidal silica measured in a state where the colloidal silica is present in the polishing liquid is 15 mV or more, an electrical conductivity is 10 μS/cm or more, and a pH is 2 to 4.
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公开(公告)号：US20200164294A1
公开(公告)日：2020-05-28
申请号：US16778705
申请日：2020-01-31
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA , Masahiro Yoshidome , Yukihisa Kawada
IPC: B01D37/04 , B01J47/014 , B01D27/00 , B01D39/16
Abstract: An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by purifying a substance to be purified containing an organic solvent, in which a content of the stabilizer in the substance to be purified with respect to the total mass of the substance to be purified is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.
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公开(公告)号：US20190079409A1
公开(公告)日：2019-03-14
申请号：US16190494
申请日：2018-11-14
Applicant: FUJIFILM Corporation
Inventor： Tomonori TAKAHASHI , Tetsuya KAMIMURA
Abstract: A treatment liquid for a semiconductor device contains an organic alkali compound, a corrosion inhibitor, an organic solvent, Ca, Fe, and Na, in which each of the mass ratio of the Ca, the mass ratio of the Fe, and the mass ratio of the Na to the organic alkali compound in the treatment liquid is 10—12 to 10−4. A method for washing a substrate and a method for removing a resist use the treatment liquid.
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