公开(公告)号：US20140028319A1

公开(公告)日：2014-01-30

申请号：US14112115

申请日：2011-12-09

申请人： Junichi Abe ,  Shinji Sato ,  Tomoko Tanabe ,  Naoaki Inoue

发明人： Junichi Abe ,  Shinji Sato ,  Tomoko Tanabe ,  Naoaki Inoue

IPC分类号： G01R31/327

CPC分类号： G01R31/327 ,  G01R31/1254 ,  H01H33/26 ,  H01H33/59 ,  H02B13/065

摘要： A discharge location determination unit includes: discharge detection circuits connected to metal electrodes, respectively, and to which a signal due to discharge is input; and a calculation circuit to which signals output from the discharge detection circuits are input, wherein, if the intensity difference or intensity ratio between the two output signals is within a predetermined value, the calculation circuit determines that the discharge location is inside a tank, otherwise the calculation circuit determines that the discharge location is outside the tank.

摘要翻译： 放电位置确定单元包括：分别连接到金属电极并且输入由于放电的信号的放电检测电路; 以及输入从放电检测电路输出的信号的计算电路，其中，如果两个输出信号之间的强度差或强度比在预定值内，则计算电路确定放电位置在罐内，否则 计算电路确定排放位置在罐外。

公开(公告)号：US20130301351A1

公开(公告)日：2013-11-14

申请号：US13467289

申请日：2012-05-09

申请人： Deepanshu Dutta ,  Shinji Sato ,  Fumiko Yano

发明人： Deepanshu Dutta ,  Shinji Sato ,  Fumiko Yano

IPC分类号： G11C16/04 ,  G11C16/12

CPC分类号： G11C16/3418 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3427

摘要： In a non-volatile storage system, a programming portion of a program-verify iteration has multiple programming pulses, and storage elements along a word line are selected for programming according to a pattern. Unselected storage elements are grouped to benefit from channel-to-channel capacitive coupling from both primary and secondary neighbor storage elements. The coupling is helpful to boost channel regions of the unselected storage elements to a higher channel potential to prevent program disturb. Each selected storage element has a different relative position within its set. For example, during a first programming pulse, first, second and third storage elements are selected in first, second and third sets, respectively. During a second programming pulse, second, third and first storage elements are selected in the first, second and third sets, respectively. During a third programming pulse, third, first and second storage elements are selected in the first, second and third sets, respectively.

摘要翻译： 在非易失性存储系统中，程序验证迭代的编程部分具有多个编程脉冲，并且根据模式选择沿字线的存储元件进行编程。 未选择的存储元件被分组以从主要和次要邻居存储元件的通道到通道的电容耦合受益。 耦合有助于将未选择的存储元件的通道区域升高到更高的通道电位，以防止程序干扰。 每个选定的存储元件在其集合内具有不同的相对位置。 例如，在第一编程脉冲期间，分别在第一，第二和第三组中选择第一，第二和第三存储元件。 在第二编程脉冲期间，分别在第一，第二和第三组中选择第二，第三和第一存储元件。 在第三编程脉冲期间，分别在第一，第二和第三组中选择第三，第一和第二存储元件。

公开(公告)号：US08552408B2

公开(公告)日：2013-10-08

申请号：US13577741

申请日：2011-02-07

申请人： Katsushi Hanawa ,  Yasushi Iseki ,  Nobukazu Kakutani ,  Takuji Furukawa ,  Taku Inaniwa ,  Shinji Sato ,  Kouji Noda

发明人： Katsushi Hanawa ,  Yasushi Iseki ,  Nobukazu Kakutani ,  Takuji Furukawa ,  Taku Inaniwa ,  Shinji Sato ,  Kouji Noda

IPC分类号： A61N5/10

CPC分类号： A61N5/1043 ,  A61N5/1071 ,  A61N2005/1074 ,  A61N2005/1087 ,  G21K1/025

摘要： Provided is a particle beam irradiation apparatus capable of highly reliable measurement of a dose of each beam and capable of highly sensitive measurement of a leakage dose caused by momentary beam emission. The particle beam irradiation apparatus according to the present invention includes: an emission control portion that controls emission and termination of a particle beam; a control portion that sequentially changes an irradiation position of the particle beam relative to an affected area; first and second dosimeters that measure dose rates of the particle beam directed to the affected area; and an abnormality determination portion that accumulates the dose rates output from the first and second dosimeters for each of predetermined determination periods to calculate first and second sectional dose measurement values and that performs second abnormality determination of determining that there is an abnormality and outputs an interlock signal for terminating the emission of the particle beam in at least one of a case in which the first sectional dose measurement value exceeds a predetermined first reference range and a case in which the second sectional dose measurement value exceeds a predetermined second reference range.

摘要翻译： 提供一种能够高度可靠地测量每个光束的剂量并且能够高度敏感地测量由瞬时光束发射引起的泄漏剂量的粒子束照射装置。 根据本发明的粒子束照射装置包括：发射控制部分，其控制粒子束的发射和终止; 控制部，其依次改变所述粒子束相对于受影响区域的照射位置; 测量指向受影响区域的粒子束的剂量率的第一和第二剂量计; 以及异常判定部，其对于每个规定的判定期间累积从第一和第二剂量计输出的剂量率，以计算第一和第二截面剂量测量值，并且执行确定存在异常的第二异常判定并输出互锁信号 用于在第一部分剂量测量值超过预定的第一参考范围的情况和第二部分剂量测量值超过预定的第二参考范围的情况中的至少一个中终止粒子束的发射。

公开(公告)号：US20130250690A1

公开(公告)日：2013-09-26

申请号：US13430502

申请日：2012-03-26

申请人： Chun-Hung Lai ,  Deepanshu Dutta ,  Shinji Sato ,  Gerrit Jan Hemink

发明人： Chun-Hung Lai ,  Deepanshu Dutta ,  Shinji Sato ,  Gerrit Jan Hemink

IPC分类号： G11C16/10

CPC分类号： G11C11/5628 ,  G11C16/0483 ,  G11C16/10

摘要： Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming, which may reduce or eliminate program disturb. The voltage applied to the gate of a select transistor of a NAND string may depend on the location of the selected word line. This could be either a source side or drain side select transistor. This may prevent or reduce program disturb that could result due to DIBL. This may also prevent or reduce program disturb that could result due to GIDL. A negative bias may be applied to the gate of a source side select transistor when programming at least some of the word lines. In one embodiment, progressively lower voltages are used for the gate of the drain side select transistor when programming progressively higher word lines.

摘要翻译： 公开了用于操作非易失性存储器的方法和装置。 一个或多个编程条件取决于选择用于编程的字线的位置，这可以减少或消除程序干扰。 施加到NAND串的选择晶体管的栅极的电压可以取决于所选字线的位置。 这可以是源极侧或漏极侧选择晶体管。 这可能会阻止或减少由于DIBL而导致的程序干扰。 这也可以防止或减少由于GIDL可能导致的程序干扰。 当编程至少一些字线时，负偏压可以施加到源极侧选择晶体管的栅极。 在一个实施例中，当编程逐渐增加的字线时，逐渐降低的电压用于漏极侧选择晶体管的栅极。

公开(公告)号：US20130250689A1

公开(公告)日：2013-09-26

申请号：US13430494

申请日：2012-03-26

申请人： Chun-Hung Lai ,  Shinji Sato ,  Shih-Chung Lee ,  Gerrit Jan Hemink

发明人： Chun-Hung Lai ,  Shinji Sato ,  Shih-Chung Lee ,  Gerrit Jan Hemink

IPC分类号： G11C16/10

CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C16/04 ,  G11C16/06 ,  G11C16/10 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/1202

摘要： Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming. Applying a selected word line dependent program condition may reduce or eliminate program disturb. The voltage applied to a common source line may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction, which may prevent or reduce program disturb. The voltage applied to bit lines of unselected NAND strings may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction.

摘要翻译： 公开了用于操作非易失性存储器的方法和装置。 一个或多个编程条件取决于为编程选择的字线的位置。 应用所选字线相关程序条件可能会减少或消除程序干扰。 施加到公共源极线的电压可以取决于被选择用于编程的字线的位置。 这可以防止或减少穿通传导，这可以防止或减少程序干扰。 施加到未选择NAND串的位线的电压可能取决于选择用于编程的字线的位置。 这可以防止或减少穿透传导。

公开(公告)号：US20120306545A1

公开(公告)日：2012-12-06

申请号：US13482384

申请日：2012-05-29

申请人： Osamu MACHIDA ,  Shinji Sato

发明人： Osamu MACHIDA ,  Shinji Sato

IPC分类号： H03K3/00

CPC分类号： H02M3/1588 ,  H02M1/08 ,  Y02B70/1466

摘要： A gate driver turns on/off a switching element Q1 by applying a control signal from a controller to a gate of the switching element. The switching element has the gate, a drain, and a source and contains a wide-bandgap semiconductor. The gate driver includes a parallel circuit that includes a first capacitor C1 and a first resistor R1 and is connected between the controller and the gate of the switching element and a short-circuit unit S4 that is connected between the gate and source of the switching element and short-circuits the gate and source of the switching element after a delay from an OFF pulse of the control signal.

摘要翻译： 栅极驱动器通过将来自控制器的控制信号施加到开关元件的栅极来打开/关闭开关元件Q1。 开关元件具有栅极，漏极和源极，并且包含宽带隙半导体。 栅极驱动器包括并联电路，其包括第一电容器C1和第一电阻器R1，并且连接在控制器和开关元件的栅极之间，并且连接在开关元件的栅极和源极之间的短路单元S4 并且在从控制信号的OFF脉冲延迟之后使开关元件的栅极和源极短路。

公开(公告)号：US20120305796A1

公开(公告)日：2012-12-06

申请号：US13577509

申请日：2011-02-07

申请人： Yasushi Iseki ,  Katsushi Hanawa ,  Kazunao Maeda ,  Nobukazu Kakutani ,  Takuji Furukawa ,  Taku Inaniwa ,  Shinji Sato ,  Kouji Noda

发明人： Yasushi Iseki ,  Katsushi Hanawa ,  Kazunao Maeda ,  Nobukazu Kakutani ,  Takuji Furukawa ,  Taku Inaniwa ,  Shinji Sato ,  Kouji Noda

IPC分类号： A61N5/10 ,  G21K5/04

CPC分类号： A61N5/10 ,  A61N5/1043 ,  A61N5/1075 ,  A61N2005/1074 ,  A61N2005/1087 ,  G01T1/2935

摘要： Provided is a particle beam irradiation apparatus that can measure and display a dose two-dimensional distribution during scan with a simple configuration, while reducing degradation of a particle beam shape. The particle beam irradiation apparatus according to the present invention includes: a beam generation portion that generates a particle beam; a beam emission control portion that controls emission of the particle beam; a beam scanning portion that two-dimensionally scans the particle beam; a sensor portion including a plurality of first linear electrodes arranged in parallel in a first direction and a plurality of second linear electrodes arranged in parallel in a second direction orthogonal to the first direction; a beam shape calculation portion that calculates a center of gravity of the particle beam from a first signal output from each of the first linear electrodes and a second signal output from each of the second linear electrodes and that obtains a two-dimensional beam shape of the particle beam around the center of gravity; a storage portion that accumulates and stores the two-dimensional beam shapes; and a display portion that displays the two-dimensional beam shapes as a two-dimensional distribution of a dose.

摘要翻译： 提供一种粒子束照射装置，其能够以简单的构造在扫描期间测量和显示剂量二维分布，同时减少粒子束形状的劣化。 根据本发明的粒子束照射装置包括：产生粒子束的光束产生部; 控制粒子束发射的光束发射控制部分; 二维地扫描粒子束的光束扫描部; 传感器部分，包括沿第一方向平行布置的多个第一线性电极和沿与第一方向正交的第二方向平行设置的多个第二线性电极; 光束形状计算部分，其根据从每个第一线性电极输出的第一信号和从每个第二线性电极输出的第二信号计算粒子束的重心，并且获得二维波束形状 颗粒束围绕重心; 存储部，其积存并存储二维光束形状; 以及显示部，其将二维光束形状显示为剂量的二维分布。

公开(公告)号：US07942594B2

公开(公告)日：2011-05-17

申请号：US11816877

申请日：2006-02-24

申请人： Masayuki Kumazaki ,  Shinji Sato ,  Takumi Kawamura

发明人： Masayuki Kumazaki ,  Shinji Sato ,  Takumi Kawamura

IPC分类号： B41J35/04

CPC分类号： B41J35/04 ,  B41J32/00 ,  B41J32/02 ,  B41J35/28

摘要： A ribbon guide includes a pair of upper and lower plates for limiting upper and lower ends of an ink ribbon. A ribbon guide plate is disposed between the pair of upper and lower plates so as to guide a non-transfer surface of the ink ribbon. Ribbon press bars are suspended between the pair of upper and lower plates so as to guide a transfer surface of the ink ribbon. Cutouts through which the ink ribbon is inserted are formed at the lower plate so as to surround lower end portions of the ribbon press bars.

摘要翻译： 色带引导件包括用于限制墨带的上端和下端的一对上板和下板。 带状引导板设置在一对上板和下板之间，以引导墨带的非转印表面。 色带按压棒悬挂在一对上板和下板之间，以引导色带的转印表面。 在下板上形成插入墨带的切口，以便围绕色带压条的下端部。

公开(公告)号：US20090290429A1

公开(公告)日：2009-11-26

申请号：US12126375

申请日：2008-05-23

申请人： Yingda Dong ,  Man L. Mui ,  Jeffrey W. Lutze ,  Shinji Sato ,  Gerrit Jan Hemink

发明人： Yingda Dong ,  Man L. Mui ,  Jeffrey W. Lutze ,  Shinji Sato ,  Gerrit Jan Hemink

IPC分类号： G11C16/06

CPC分类号： G11C11/5628 ,  G11C16/0483 ,  G11C16/32 ,  G11C16/3418 ,  G11C16/3427

摘要： Channel boosting is improved in non-volatile storage to reduce program disturb. A pre-charge module voltage source is used to pre-charge bit lines during a programming operation. The pre-charge module voltage source is coupled to a substrate channel via the bit lines to boost the channel. An additional source of boosting is provided by electromagnetically coupling a voltage from a conductive element to the bit lines and the channel. To achieve this, the bit lines and the channel are allowed to float together by disconnecting the bit lines from the voltage sources. The conductive element can be a source line, power supply line or substrate body, for instance, which receives an increasing voltage during the pre-charging and is proximate to the bit lines.

摘要翻译： 在非易失性存储器中改善通道增强以减少程序干扰。 预充电模块电压源用于在编程操作期间对位线进行预充电。 预充电模块电压源通过位线耦合到衬底通道以升高通道。 通过将来自导电元件的电压电磁耦合到位线和通道来提供额外的升压源。 为了实现这一点，通过将位线与电压源断开来允许位线和通道浮动在一起。 导电元件可以是例如在预充电期间接收增加的电压并且靠近位线的源极线，电源线或衬底主体。

公开(公告)号：US20090233412A1

公开(公告)日：2009-09-17

申请号：US12419637

申请日：2009-04-07

申请人： Gerrit Jan Hemink ,  Shinji Sato

发明人： Gerrit Jan Hemink ,  Shinji Sato

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  G11C16/0483 ,  G11C16/10 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/66825 ,  H01L29/7885

摘要： Stacked gate structures for a NAND string are created on a substrate. Source implantations are performed at a first implantation angle to areas between the stacked gate structures. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The drain implantations create lower doped regions of a first conductivity type in the substrate on drain sides of the stacked gate structures. The source implantations create higher doped regions of the first conductivity type in the substrate on source sides of the stacked gate structures.

摘要翻译： 在衬底上产生用于NAND串的堆叠栅极结构。 以与堆叠的栅极结构之间的区域的第一注入角度进行源植入。 排水注入以与叠置的栅极结构之间的区域的第二注入角度进行。 漏极注入在堆叠栅极结构的漏极侧的衬底中产生第一导电类型的较低掺杂区域。 源极注入在层叠栅极结构的源极侧的衬底中产生第一导电类型的较高掺杂区域。