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41.发明申请公开(公告)号：US20050110932A1
公开(公告)日：2005-05-26
申请号：US10978533
申请日：2004-11-02
申请人： Youn Chang , Heung Cho
发明人： Youn Chang , Heung Cho
IPC分类号： G02F1/133 , G02F1/1343 , G02F1/136 , G02F1/1362 , G03F7/20 , H01L21/00 , H01L29/786
CPC分类号： G02F1/136227 , G02F1/134363 , G02F2001/136231
摘要： A thin film transistor substrate of horizontal electric field type liquid crystal display device includes: a gate line and a common line arranged in parallel on a substrate and formed from a first conductive layer; a data line formed from a second conductive layer, the data line crossing the gate line and the common line having a gate insulating film therebetween such that the data line, the gate line and the common line define a pixel area; a thin film transistor having a gate connected to the gate line and a source electrode connected to the data line; a common electrode extending from the common line into the pixel area and formed from the first conductive layer; a protective film for covering a plurality of signal lines and electrodes and the thin film transistor; a pixel hole in the protective film having an elongated shape that parallels the common electrode; and a pixel electrode connected to a side surface of a drain electrode of the thin film transistor and formed from a third conductive layer within the pixel hole.
摘要翻译： 水平电场型液晶显示装置的薄膜晶体管基板包括：栅极线和平行布置在基板上并由第一导电层形成的公共线; 由第二导电层形成的数据线，与栅极线交叉的数据线和在其之间具有栅极绝缘膜的公共线，使得数据线，栅极线和公共线限定像素区域; 具有连接到栅极线的栅极和连接到数据线的源电极的薄膜晶体管; 从公共线延伸到像素区域并由第一导电层形成的公共电极; 用于覆盖多个信号线和电极的保护膜和薄膜晶体管; 保护膜中的像素孔具有与公共电极平行的细长形状; 以及连接到薄膜晶体管的漏电极的侧表面并由像素孔内的第三导电层形成的像素电极。
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公开(公告)号：US20050099579A1
公开(公告)日：2005-05-12
申请号：US10981542
申请日：2004-11-05
申请人： Soon Yoo , Youn Chang , Heung Cho
发明人： Soon Yoo , Youn Chang , Heung Cho
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1333 , G02F1/1339 , G02F1/1362 , G02F1/1368 , G03F7/20 , H01L21/00 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L27/1288 , G02F1/133707 , G02F1/13394 , G02F1/13458 , G02F2001/136231 , H01L27/1214
摘要： A liquid crystal display (LCD) panel is fabricated in a simplified process. The LCD panel includes a thin film transistor (TFT) array substrate with a gate and data lines crossing each other to define a pixel area, a TFT at the crossings of the gate and data lines, a protective film, and a pixel electrode connected to the TFT and formed within a pixel opening that is arranged at the pixel area and formed through the protective film and a gate insulating film. A color filter array substrate is joined to the TFT array substrate. A pattern spacer is between the TFT and color filter array substrate and overlaps at least one of the gate line, the data line, and the thin film transistor. A rib is formed from the same layer as the pattern spacer and overlaps the pixel electrode. Liquid crystal material is provided within the LCD panel.
摘要翻译： 以简化的工艺制造液晶显示器（LCD）面板。 LCD面板包括薄膜晶体管（TFT）阵列基板，栅极和数据线彼此交叉以限定像素区域，在栅极和数据线的交叉处的TFT，保护膜和连接到 TFT形成在像素区域内，并形成在像素区域并形成在保护膜和栅极绝缘膜上的像素开口内。 滤色器阵列基板连接到TFT阵列基板。 图案间隔物位于TFT和滤色器阵列基板之间，并与栅极线，数据线和薄膜晶体管中的至少一个重叠。 肋由与图案间隔物相同的层形成，并与像素电极重叠。 液晶材料设置在LCD面板内。
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43.发明申请Thin film transistor substrate for display device and fabricating method thereof 有权用于显示装置的薄膜晶体管基板及其制造方法公开(公告)号：US20050077522A1
公开(公告)日：2005-04-14
申请号：US10962541
申请日：2004-10-13
申请人： Youn Chang , Heung Cho
发明人： Youn Chang , Heung Cho
IPC分类号： G02F1/136 , G02F1/1362 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/10
CPC分类号： G02F1/13458 , G02F1/136213 , G02F2001/136236 , H01L27/124 , H01L27/1255 , H01L27/1288 , H01L29/66742
摘要： A thin film transistor substrate for a display device includes a gate line; a gate insulating film disposed over the gate line; a data line disposed on the gate insulating film intersecting with the gate line to define a pixel area; a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode, and a channel between the source electrode and the drain electrode; a protective film disposed covering the gate line, the data line, and the thin film transistor; a pixel electrode connected to the drain electrode of the thin film transistor; and a storage capacitor having a first upper storage electrode connected to the pixel electrode, and a second upper storage electrode connected to the first upper storage electrode on a side surface basis via a first contact hole passing through the protective film and the first upper storage electrode at an overlapping portion of the gate line and the first upper storage electrode.
摘要翻译： 用于显示装置的薄膜晶体管基板包括栅线; 设置在栅极线上的栅极绝缘膜; 设置在栅极绝缘膜上的数据线，与栅极线交叉以限定像素区域; 薄膜晶体管，其包括连接到栅极线的栅极电极，连接到数据线的源电极，漏极电极和源电极和漏电极之间的沟道; 覆盖所述栅极线，所述数据线和所述薄膜晶体管的保护膜; 连接到薄膜晶体管的漏电极的像素电极; 以及存储电容器，其具有连接到所述像素电极的第一上部存储电极，以及第二上部存储电极，所述第二上部存储电极经由穿过所述保护膜的第一接触孔和所述第一上部存储电极， 在栅极线和第一上部存储电极的重叠部分。
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公开(公告)号：US20050077516A1
公开(公告)日：2005-04-14
申请号：US10958260
申请日：2004-10-06
申请人： Byoung Lim , Hyun Seo , Heung Cho , Hong Kim
发明人： Byoung Lim , Hyun Seo , Heung Cho , Hong Kim
IPC分类号： G02F1/1362 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04
CPC分类号： H01L27/1288 , G02F1/13458 , G02F1/136227 , G02F2001/136236 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L29/66742
摘要： A thin film transistor array substrate device includes a gate line formed on a substrate, a data line crossing the gate line with a gate insulating pattern position therebetween, a thin film transistor at a crossing of the gate line and the data line, a pixel electrode formed at a pixel region defined by the crossing of the gate line and the data line and connected to the thin film transistor, a gate pad part having a lower gate pad electrode connected to the gate line and an upper gate pad electrode connected to the lower gate pad electrode, a data pad part having a lower data pad electrode connected to the date line and an upper data pad electrode connected to the lower data pad electrode, and a passivation film pattern formed at a region besides the region including the pixel electrode, the upper data pad electrode, and the upper gate pad electrode, wherein the pixel electrode is formed on the gate insulating pattern of the pixel region exposed by the passivation film pattern.
摘要翻译： 薄膜晶体管阵列基板装置包括形成在基板上的栅极线，与栅极线交叉的数据线与栅极绝缘图案位置之间，栅极线与数据线交叉的薄膜晶体管，像素电极 形成在由栅极线和数据线的交叉限定并连接到薄膜晶体管的像素区域处，具有连接到栅极线的下部栅极焊盘电极的栅极焊盘部分和连接到栅极线的下部栅极焊盘电极 栅极焊盘电极，具有连接到日期线的下部数据焊盘电极的数据焊盘部分和连接到下部数据焊盘电极的上部数据焊盘电极，以及形成在除了像素电极之外的区域处的钝化膜图案， 上部数据焊盘电极和上部栅极焊盘电极，其中像素电极形成在由钝化膜图案曝光的像素区域的栅极绝缘图案上。
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公开(公告)号：US20070048676A1
公开(公告)日：2007-03-01
申请号：US11416016
申请日：2006-05-02
IPC分类号： G03C5/00
CPC分类号： G03F7/00
摘要： A method for manufacturing a printing plate to acheive a precise and fine pattern by minimizing a variation of etching critical dimension is disclosed. The method uses a hard mask having an opening on an insulating substrate to form a first trench having a first depth in the insulating substrate. A first etching stopper and a first photoresist may be applied on a surface of the insulating substrate including the first trench for patterning the first photoresist by exposing the first photoresist. Likewise, a second and third trench may be formed.
摘要翻译： 公开了一种通过最小化蚀刻临界尺寸的变化来制造印版以获得精确和精细图案的方法。 该方法使用在绝缘基板上具有开口的硬掩模，以在绝缘基板中形成具有第一深度的第一沟槽。 第一蚀刻停止器和第一光致抗蚀剂可以施加在包括第一沟槽的绝缘基板的表面上，用于通过暴露第一光致抗蚀剂来图案化第一光致抗蚀剂。 类似地，可以形成第二和第三沟槽。
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46.发明申请公开(公告)号：US20070002250A1
公开(公告)日：2007-01-04
申请号：US11477385
申请日：2006-06-30
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F2201/40
摘要： A method of manufacturing an in-plane switching mode liquid crystal display device includes forming an insulation layer on a substrate, patterning a resist layer on the insulation layer, etching the insulation layer to form an insulation layer pattern having tapered edges, forming electrode layers on exposed surfaces of the substrate, the tapered edges, and the resist layer, etching the electrode layers formed on the exposed surfaces and on the resist layer, and removing the resist layer to form the common electrode and the pixel electrode with slopes and that are arranged parallel to each other on the tapered edges of the insulation layer. The common electrode and the pixel electrode each have a width less than 1 μm, which increases aperture ratio and transmittance.
摘要翻译： 一种面内切换模式液晶显示装置的制造方法包括在基板上形成绝缘层，在绝缘层上形成抗蚀剂层，蚀刻绝缘层，形成具有锥形边缘的绝缘层图案，形成电极层 衬底的暴露表面，锥形边缘和抗蚀剂层，蚀刻形成在暴露表面和抗蚀剂层上的电极层，并且去除抗蚀剂层以形成具有斜面的公共电极和像素电极，并且布置 在绝缘层的锥形边缘上彼此平行。 公共电极和像素电极各自具有小于1um的宽度，这增加了开口率和透射率。
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47.发明申请Method of forming fine pattern, liquid crystal display device having a fine pattern and fabricating method thereof 有权形成精细图案的方法，具有精细图案的液晶显示装置及其制造方法公开(公告)号：US20070001961A1
公开(公告)日：2007-01-04
申请号：US11451482
申请日：2006-06-13
IPC分类号： G09G3/36
CPC分类号： G02F1/13439 , G02F1/134363 , G03F7/40
摘要： A method of forming fine pattern includes providing a film, forming a photo-resist pattern on the film, ashing the photo-resist pattern and patterning the film by using the ashed photo-resist pattern as a mask.
摘要翻译： 形成精细图案的方法包括提供膜，在膜上形成光致抗蚀剂图案，使光刻胶图案灰化并通过使用灰化的光致抗蚀剂图案作为掩模来图案化膜。
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48.发明申请公开(公告)号：US20070000865A1
公开(公告)日：2007-01-04
申请号：US11476806
申请日：2006-06-29
IPC分类号： C23F1/00
CPC分类号： G02F1/1362
摘要： The present invention relates to the implementation of minute patterns and thus improving pattern resolution and transcription property. Provided is a printing substrate for a liquid crystal display comprising a transparent insulating substrate, and a material layer for dry etching formed on an upper surface of the transparent insulating substrate, the material layer for dry etching constituting a printing pattern, and a manufacturing method of a printing substrate for a liquid crystal display comprising forming a material layer on a transparent insulating substrate, applying a photo resist along a printing pattern on the upper side of the material layer, dry-etching the material layer along the printing pattern using the photo resist as an etching mask, and striping the photo resist.
摘要翻译： 本发明涉及微小图案的实现，从而提高图案分辨率和转录特性。 提供一种用于液晶显示器的印刷基板，其包括透明绝缘基板和形成在透明绝缘基板的上表面上的干蚀刻用材料层，构成印刷图案的干蚀刻用材料层及其制造方法 一种用于液晶显示器的印刷基板，包括在透明绝缘基板上形成材料层，沿着材料层上侧的印刷图案施加光致抗蚀剂，使用光致抗蚀剂沿印刷图案对材料层进行干蚀刻 作为蚀刻掩模，并且剥离光刻胶。
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公开(公告)号：US20060292487A1
公开(公告)日：2006-12-28
申请号：US11314313
申请日：2005-12-22
IPC分类号： G03C1/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0007
摘要： A patterning method includes depositing a pattern target layer on a surface of a substrate, providing a printing plate with concaves in a first side of a transparent substrate and an opaque layer on the first side except in the concaves of the first sides, filling resins into the concaves of the printing plate, positioning the substrate of the printing plate to correspond to an upper portion of the pattern target layer, and transferring resins of the printing plate onto the pattern target layer by exposing resins to a curing light to harden resins.
摘要翻译： 图案化方法包括在基板的表面上沉积图案目标层，在透明基板的第一侧提供具有凹陷的印刷版，并且在第一侧的凹部之外的第一侧上设置不透明层，将树脂填充到 印版的凹部，将印版的基板定位成对应于图案目标层的上部，并且通过将树脂暴露于固化光以使树脂硬化来将印刷板的树脂转印到图案目标层上。
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公开(公告)号：US20050164467A1
公开(公告)日：2005-07-28
申请号：US11086286
申请日：2005-03-23
IPC分类号： H01L21/76 , H01L21/28 , H01L21/336 , H01L21/302
CPC分类号： H01L29/66651 , H01L21/28123
摘要： Disclosed are a semiconductor devices and method of fabricating the same. Anti-etch films are formed in the top corners of the device isolation film using a material that has a different etch selectivity ratio from nitride or oxide and is not etched in an oxide gate pre-cleaning process. It is thus possible to prevent formation of a moat at the top corners of the device isolation film and the gate oxide film from being thinly formed, thereby improving reliability and electrical characteristics of the device.
摘要翻译： 公开了半导体器件及其制造方法。 使用具有与氮化物或氧化物不同的蚀刻选择比的材料并且在氧化物栅极预清洁工艺中不被蚀刻的材料在器件隔离膜的顶角形成防蚀刻膜。 因此，可以防止在器件隔离膜和栅极氧化膜的顶角形成护城河，从而提高器件的可靠性和电气特性。
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