公开(公告)号：US5296048A

公开(公告)日：1994-03-22

申请号：US28639

申请日：1993-03-09

申请人： Leroy L. Chang ,  Leo Esaki ,  Hiro Munekata ,  Hideo Ohno ,  Stephan vonMolnar

发明人： Leroy L. Chang ,  Leo Esaki ,  Hiro Munekata ,  Hideo Ohno ,  Stephan vonMolnar

IPC分类号： C30B23/02 ,  H01F1/40 ,  H01F41/14 ,  H01L43/10 ,  H01F1/00

CPC分类号： C30B23/02 ,  C30B29/40 ,  H01F1/401 ,  H01F1/404 ,  H01F1/405 ,  H01F41/14 ,  H01L43/10

摘要： A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient to change the material or compound from a paramagnetic state to a locally ordered magnetic state. The material or compound is made by depositing III, and V or IV and a transition element or a rare earth element onto a substrate at conditions such that the transition element or rare earth element that is deposited on the substrate is not in equilibrium with the material or compound. By employing this technique new semiconductor materials or compounds can be made including Ga.sub.1-x Mn.sub.x As and In.sub.1-x Mn As where Mn is present in an amount greater than about 5.4.times.10.sup.20 cm.sup.-3.

摘要翻译： 公开了一种新的半导体材料或其制造方法。 材料或化合物具有式III-V或IV，其包括作为化合物的一部分的过渡元素或稀土元素，其量足以将材料或化合物从顺磁性状态改变为局部有序的磁状态。 材料或化合物是通过将III和V或IV和过渡元素或稀土元素沉积到基底上而使沉积在基底上的过渡元素或稀土元素不与材料平衡的条件制备的 或化合物。 通过采用这种技术，可以制备新的半导体材料或化合物，其包括Ga1-xMnxAs和In1-xMnAs，其中Mn以大于约5.4×1020cm-3的量存在。

公开(公告)号：US5294287A

公开(公告)日：1994-03-15

申请号：US739949

申请日：1991-08-02

申请人： Leroy L. Chang ,  Leo Esaki ,  Hiro Munekata ,  Hideo Ohno ,  Stephan vonMolnar

发明人： Leroy L. Chang ,  Leo Esaki ,  Hiro Munekata ,  Hideo Ohno ,  Stephan vonMolnar

IPC分类号： C30B23/02 ,  H01F1/40 ,  H01F41/14 ,  H01L21/20 ,  H01L21/203 ,  H01L43/10 ,  C30B25/02

CPC分类号： C30B23/02 ,  C30B29/40 ,  H01F1/401 ,  H01F1/404 ,  H01F1/405 ,  H01F41/14 ,  H01L43/10 ,  Y10S438/918

摘要： A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient to change the material or compound from a paramagnetic state to a locally ordered magnetic state. The material or compound is made by depositing III, and V or IV and a transition element or a rare earth element onto a substrate at conditions such that the transition element or rare earth element that is deposited on the substrate is not in equilibrium with the material or compound. By employing this technique new semiconductor materials or compounds can be made including Ga.sub.1-x Mn.sub.x As and In.sub.1-x Mn.sub.x As where Mn is present in an amount greater than about 5.4.times.10.sup.20 cm.sup.-3.

摘要翻译： 公开了一种用于其制造的新的半导体材料或其化合物和方法。 材料或化合物具有式III-V或IV，其包括作为化合物的一部分的过渡元素或稀土元素，其量足以将材料或化合物从顺磁性状态改变为局部有序的磁状态。 材料或化合物是通过将III和V或IV和过渡元素或稀土元素沉积到基底上而使沉积在基底上的过渡元素或稀土元素不与材料平衡的条件制备的 或化合物。 通过采用这种技术，可以制备新的半导体材料或化合物，其包括Ga1-xMnxAs和In1-xMnxAs，其中Mn以大于约5.4×1020cm-3的量存在。

公开(公告)号：US08093589B2

公开(公告)日：2012-01-10

申请号：US10560907

申请日：2004-06-14

申请人： Toshinori Sugihara ,  Hideo Ohno ,  Masashi Kawasaki

发明人： Toshinori Sugihara ,  Hideo Ohno ,  Masashi Kawasaki

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： In a thin film transistor (1), a gate insulating layer (4) is formed on a gate electrode (3) formed on an insulating substrate (2). Formed on the gate insulating layer (4) is a semiconductor layer (5). Formed on the semiconductor layer (5) are a source electrode (6) and a drain electrode (7). A protective layer (8) covers them, so that the semiconductor layer (5) is blocked from an atmosphere. The semiconductor layer (5) (active layer) is made of, e.g., a semiconductor containing polycrystalline ZnO to which, e.g., a group V element is added. This allows practical use of a semiconductor device which has an active layer made of zinc oxide and which includes an protective layer for blocking the active layer from an atmosphere.

摘要翻译： 在薄膜晶体管（1）中，在形成在绝缘基板（2）上的栅电极（3）上形成栅极绝缘层（4）。 形成在栅极绝缘层（4）上的是半导体层（5）。 形成在半导体层（5）上的是源电极（6）和漏电极（7）。 保护层（8）覆盖它们，使得半导体层（5）被阻挡在大气中。 半导体层（有源层）由例如含有V族元素的多晶ZnO的半导体构成。 这允许实际使用具有由氧化锌制成的有源层的半导体器件，并且其包括用于从大气阻挡有源层的保护层。

公开(公告)号：US20110175090A1

公开(公告)日：2011-07-21

申请号：US13072910

申请日：2011-03-28

申请人： Toshinori Sugihara ,  Hideo Ohno ,  Masashi Kawasaki

发明人： Toshinori Sugihara ,  Hideo Ohno ,  Masashi Kawasaki

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： In a thin film transistor, a gate insulating layer is formed on a gate electrode formed on an insulating substrate. Formed on the gate insulating layer is a semiconductor layer. Formed on the semiconductor layer are a source electrode and a drain electrode. A protective layer covers them, so that the semiconductor layer is blocked from an atmosphere. The semiconductor layer (active layer) is made of, e.g., a semiconductor containing polycrystalline ZnO to which, e.g., a group V element is added. This allows practical use of a semiconductor device which has an active layer made of zinc oxide and which includes an protective layer for blocking the active layer from an atmosphere.

摘要翻译： 在薄膜晶体管中，在绝缘基板上形成的栅电极上形成栅极绝缘层。 在栅极绝缘层上形成半导体层。 形成在半导体层上的是源电极和漏电极。 保护层覆盖它们，使得半导体层被阻挡在大气中。 半导体层（有源层）由例如含有例如V族元素的多晶ZnO的半导体构成。 这允许实际使用具有由氧化锌制成的有源层的半导体器件，并且其包括用于从大气阻挡有源层的保护层。

公开(公告)号：US20100246252A1

公开(公告)日：2010-09-30

申请号：US12682044

申请日：2008-10-03

申请人： Hideo Ohno ,  Fumihiro Matsukura ,  Daichi Chiba

发明人： Hideo Ohno ,  Fumihiro Matsukura ,  Daichi Chiba

IPC分类号： G11C11/14 ,  H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L43/10

摘要： A nonvolatile solid state magnetic memory with a ultra-low power consumption and a recording method thereof, the memory including a magnetic material having a magnetic anisotropy that can be changed by increasing or decreasing a carrier concentration, wherein a direction of an easy axis of magnetization, in which the magnetization is oriented easily, is controlled by increasing or decreasing the carrier concentration. The nonvolatile solid state magnetic memory including a recording layer of a magnetic material, and a recording method thereof, in which a carrier (electron or hole) concentration in the recording layer is increased and/or decreased, whereby the magnetization is rotated or reversed and the recording operation is performed.

摘要翻译： 一种具有超低功耗的非易失性固态磁存储器及其记录方法，所述存储器包括具有可通过增加或减少载流子浓度而改变的磁各向异性的磁性材料，其中易磁化轴的方向 通过增加或减少载流子浓度来控制磁化取向容易。 包括磁性材料的记录层的非挥发性固态磁存储器及其记录方法，其中记录层中的载流子（电子或空穴）浓度增加和/或减少，由此磁化被旋转或反转， 执行记录操作。

公开(公告)号：US06727522B1

公开(公告)日：2004-04-27

申请号：US09850732

申请日：2001-06-06

申请人： Masashi Kawasaki ,  Hideo Ohno

发明人： Masashi Kawasaki ,  Hideo Ohno

IPC分类号： H01L3300

CPC分类号： H01S5/0261 ,  H01L27/15 ,  H01L29/22 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/7317 ,  H01L29/78 ,  H01L29/78618 ,  H01L29/7869 ,  H01L33/28

摘要： A transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like. A channel layer 11 formed of a transparent semiconductor such as zinc oxide ZnO. A transparent electrode is used for all of a source 12, a drain 13 and a gate 14, or a part of them. As the transparent electrode, a transparent conductive material such as conductive ZnO doped with, for example, group III elements is used. As a gate insulating layer 15, a transparent insulative material such as insulative ZnO doped with elements capable of taking a valence of one as a valence number or group V elements is used. If a substrate 16 must be transparent, for example, glass, sapphire, plastic or the like can be used as a transparent material.

摘要翻译： 提供了通过使用由氧化锌等制成的透明沟道层而完全和部分透明的晶体管。 由诸如氧化锌ZnO的透明半导体形成的沟道层11。 一个透明电极用于所有的源12，漏极13和栅极14或其一部分。 作为透明电极，使用掺杂有例如III族元素的透明导电材料，例如导电ZnO。 作为栅极绝缘层15，使用透明绝缘材料，例如掺杂有能够以1价或1价V价元素为一价元素的绝缘性ZnO。 如果衬底16必须是透明的，例如可以使用玻璃，蓝宝石，塑料等作为透明材料。

公开(公告)号：US06614046B2

公开(公告)日：2003-09-02

申请号：US09777366

申请日：2001-02-12

申请人： Hideo Ohno ,  Yuzo Ohno ,  Shuya Kishimoto

发明人： Hideo Ohno ,  Yuzo Ohno ,  Shuya Kishimoto

IPC分类号： H01L2906

CPC分类号： B82Y25/00 ,  H01F10/3213 ,  H01L29/66984 ,  Y10S977/712

摘要： A nuclear spin control device comprises a first semiconducting layer with spin-up carriers, a second semiconducting layer with spin-down carriers; and a third semiconducting layer arranged between the first and the second semiconducting layers. The third semiconducting layer can be tunnelled selectively by the spin-up carriers and the spin-down carriers such that nuclear spin in the third semiconducting layer selectively interacts with the carriers so as to be oriented into a desired direction. The device may be adapted to control the shape of a wave function so as to cover nuclear spins in the third semiconducting layer and propagate information of one nuclear spin to another nuclear spin.

摘要翻译： 核自旋控制装置包括具有自旋载流子的第一半导体层，具有自旋向下载流子的第二半导体层; 以及布置在第一和第二半导体层之间的第三半导体层。 第三半导电层可以由自旋载流子和自旋向下载流子选择性地隧道切割，使得第三半导体层中的核自旋选择性地与载流子相互作用以被定向到期望的方向。 该装置可以适于控制波函数的形状，以覆盖第三半导体层中的核自旋，并将一个核自旋的信息传播到另一个核自旋。

公开(公告)号：US06563174B2

公开(公告)日：2003-05-13

申请号：US10224879

申请日：2002-08-21

申请人： Masashi Kawasaki ,  Hideo Ohno ,  Kazuki Kobayashi ,  Ikuo Sakono

发明人： Masashi Kawasaki ,  Hideo Ohno ,  Kazuki Kobayashi ,  Ikuo Sakono

IPC分类号： H01L2701

CPC分类号： H01L29/7869 ,  H01L27/1214 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603

摘要： In a thin film transistor, a gate insulating film having a first insulating film and a second insulating film is formed on a gate electrode, and a semiconductor layer including ZnO etc. is formed on the second insulating film. The first insulating film is formed by using SiNx having a high insulating characteristic, and the second insulating film is formed by using an oxide (for example, SiO2). This structure improves a crystalline characteristic of the semiconductor layer that constitutes an interface in combination with the second insulating film, and decreases a defective level of the interface between the semiconductor layer and the second insulating film. Further, the second insulating film is constituted of the oxide, so that it is possible to restrain a material for the second insulating film from depriving oxygen of the semiconductor layer. This keeps a crystalline characteristic of the semiconductor layer under a preferable condition in the vicinity of the interface between the second insulating film and the semiconductor layer. As a result, it is possible to realize a thin film transistor such that: a leak current level at an OFF area is low, and the mobility is high, and a switching characteristic is preferable. Thus, in the thin film transistor having a transparent semiconductor film, a TFT characteristic is improved.

摘要翻译： 在薄膜晶体管中，在栅电极上形成具有第一绝缘膜和第二绝缘膜的栅极绝缘膜，并且在第二绝缘膜上形成包括ZnO等的半导体层。 第一绝缘膜通过使用具有高绝缘特性的SiNx形成，并且第二绝缘膜通过使用氧化物（例如，SiO 2）形成。 该结构改善了构成与第二绝缘膜结合的界面的半导体层的结晶特性，并降低了半导体层与第二绝缘膜之间的界面的缺陷水平。 此外，第二绝缘膜由氧化物构成，使得可以抑制第二绝缘膜的材料剥夺半导体层的氧。 这在第二绝缘膜和半导体层之间的界面附近的优选条件下保持半导体层的结晶特性。 结果，可以实现薄膜晶体管，使得在OFF区域的漏电流水平低，并且迁移率高，并且切换特性是优选的。 因此，在具有透明半导体膜的薄膜晶体管中，提高了TFT特性。

公开(公告)号：US06482729B2

公开(公告)日：2002-11-19

申请号：US09799722

申请日：2001-03-07

申请人： Hideo Ohno ,  Fumihiro Matsukura

发明人： Hideo Ohno ,  Fumihiro Matsukura

IPC分类号： H01L2128

CPC分类号： B82Y15/00 ,  B82Y25/00 ,  H01F10/3213 ,  H01F10/3254 ,  H01L29/66984

摘要： A semiconductor device for generating spin-polarized conduction electrons including a ferromagnetic semiconductor layer and a non-magnetic semiconductor layer having a band alignment of Type II with respect to the ferromagnetic semiconductor, said ferromagnetic semiconductor layer and non-magnetic semiconductor layer being connected together directly or with interposing therebetween another non-magnetic semiconductor layer or energy barrier layer such that a spin splitting of a conduction band of the non-magnetic semiconductor layer is induced by a spontaneous spin splitting of a valence band of the ferromagnetic semiconductor layer, and spin-polarized conduction electrons are generated in the non-magnetic semiconductor layer by the spin splitting of the conduction band of the non-magnetic semiconductor layer.

摘要翻译： 一种半导体器件，用于产生包括铁磁半导体层和相对于铁磁半导体的II型带对准的非磁性半导体层的自旋极化传导电子，所述铁磁半导体层和非磁性半导体层直接连接在一起 或者介于另一非磁性半导体层或能量阻挡层之间，使得非磁性半导体层的导带的自旋分裂是由铁磁半导体层的价带的自发旋转分裂引起的， 通过非磁性半导体层的导带的自旋分裂，在非磁性半导体层中产生极化的导电电子。

公开(公告)号：US4637866A

公开(公告)日：1987-01-20

申请号：US785091

申请日：1985-10-04

申请人： Satoshi Konishi ,  Hideo Ohno ,  Yuji Naruse ,  Hiroshi Yoshida

发明人： Satoshi Konishi ,  Hideo Ohno ,  Yuji Naruse ,  Hiroshi Yoshida

IPC分类号： C01B4/00 ,  C25B1/02 ,  G21F9/06

CPC分类号： G21F9/06 ,  C25B1/02

摘要： The present invention is concerned with a process for recovering tritium from tritiated water wherein a gas stream containing tritiated water steam is conducted into an electrolytic cell within which is disposed an oxygen ion conductive solid electrolytic membrane having a cathode and an anode disposed upon the opposite surfaces thereof. As a result of the electrolysis process, tritium gas is collected from the cathode side of the electrolytic cell, while oxygen gas is collected from the anode side of the electrolytic cell.

摘要翻译： 本发明涉及从氚化水中回收氚的方法，其中将含有氚化水蒸汽的气流导入电解槽中，其中设置氧离子导电固体电解质膜，阴离子和阳极设置在相对表面上 其中。 作为电解处理的结果，从电解池的阴极侧收集氚气，同时从电解池的阳极侧收集氧气。