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    Class of magnetic materials for solid state devices
    1.
    发明授权
    Class of magnetic materials for solid state devices 失效
    用于固态器件的磁性材料类

    公开(公告)号：US5296048A

    公开(公告)日：1994-03-22

    申请号：US28639

    申请日：1993-03-09

    申请人： Leroy L. Chang ,  Leo Esaki ,  Hiro Munekata ,  Hideo Ohno ,  Stephan vonMolnar

    发明人： Leroy L. Chang ,  Leo Esaki ,  Hiro Munekata ,  Hideo Ohno ,  Stephan vonMolnar

    IPC分类号： C30B23/02 ,  H01F1/40 ,  H01F41/14 ,  H01L43/10 ,  H01F1/00

    CPC分类号： C30B23/02 ,  C30B29/40 ,  H01F1/401 ,  H01F1/404 ,  H01F1/405 ,  H01F41/14 ,  H01L43/10

    摘要： A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient to change the material or compound from a paramagnetic state to a locally ordered magnetic state. The material or compound is made by depositing III, and V or IV and a transition element or a rare earth element onto a substrate at conditions such that the transition element or rare earth element that is deposited on the substrate is not in equilibrium with the material or compound. By employing this technique new semiconductor materials or compounds can be made including Ga.sub.1-x Mn.sub.x As and In.sub.1-x Mn As where Mn is present in an amount greater than about 5.4.times.10.sup.20 cm.sup.-3.

    摘要翻译： 公开了一种新的半导体材料或其制造方法。 材料或化合物具有式III-V或IV，其包括作为化合物的一部分的过渡元素或稀土元素，其量足以将材料或化合物从顺磁性状态改变为局部有序的磁状态。 材料或化合物是通过将III和V或IV和过渡元素或稀土元素沉积到基底上而使沉积在基底上的过渡元素或稀土元素不与材料平衡的条件制备的 或化合物。 通过采用这种技术，可以制备新的半导体材料或化合物，其包括Ga1-xMnxAs和In1-xMnAs，其中Mn以大于约5.4×1020cm-3的量存在。

    Class of magnetic materials for solid state devices
    2.
    发明授权
    Class of magnetic materials for solid state devices 失效
    用于固态器件的磁性材料类

    公开(公告)号：US5294287A

    公开(公告)日：1994-03-15

    申请号：US739949

    申请日：1991-08-02

    申请人： Leroy L. Chang ,  Leo Esaki ,  Hiro Munekata ,  Hideo Ohno ,  Stephan vonMolnar

    发明人： Leroy L. Chang ,  Leo Esaki ,  Hiro Munekata ,  Hideo Ohno ,  Stephan vonMolnar

    IPC分类号： C30B23/02 ,  H01F1/40 ,  H01F41/14 ,  H01L21/20 ,  H01L21/203 ,  H01L43/10 ,  C30B25/02

    CPC分类号： C30B23/02 ,  C30B29/40 ,  H01F1/401 ,  H01F1/404 ,  H01F1/405 ,  H01F41/14 ,  H01L43/10 ,  Y10S438/918

    摘要： A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient to change the material or compound from a paramagnetic state to a locally ordered magnetic state. The material or compound is made by depositing III, and V or IV and a transition element or a rare earth element onto a substrate at conditions such that the transition element or rare earth element that is deposited on the substrate is not in equilibrium with the material or compound. By employing this technique new semiconductor materials or compounds can be made including Ga.sub.1-x Mn.sub.x As and In.sub.1-x Mn.sub.x As where Mn is present in an amount greater than about 5.4.times.10.sup.20 cm.sup.-3.

    摘要翻译： 公开了一种用于其制造的新的半导体材料或其化合物和方法。 材料或化合物具有式III-V或IV，其包括作为化合物的一部分的过渡元素或稀土元素，其量足以将材料或化合物从顺磁性状态改变为局部有序的磁状态。 材料或化合物是通过将III和V或IV和过渡元素或稀土元素沉积到基底上而使沉积在基底上的过渡元素或稀土元素不与材料平衡的条件制备的 或化合物。 通过采用这种技术，可以制备新的半导体材料或化合物，其包括Ga1-xMnxAs和In1-xMnxAs，其中Mn以大于约5.4×1020cm-3的量存在。

    One-dimensional quantum pipeline type carrier path semiconductor devices
    3.
    发明授权
    One-dimensional quantum pipeline type carrier path semiconductor devices 失效
    一维量子管道型载流子路径半导体器件

    公开(公告)号：US4733282A

    公开(公告)日：1988-03-22

    申请号：US765403

    申请日：1985-08-13

    申请人： Leroy L. Chang ,  Leo Esaki

    发明人： Leroy L. Chang ,  Leo Esaki

    IPC分类号： H01L29/812 ,  H01L21/20 ,  H01L21/338 ,  H01L27/00 ,  H01L29/06 ,  H01L29/12 ,  H01L29/15 ,  H01L29/775 ,  H01L29/778 ,  H01L29/80 ,  H01L27/12

    CPC分类号： B82Y10/00 ,  H01L29/125 ,  H01L29/151 ,  H01L29/775

    摘要： A semiconductor superlattice is provided with a one-dimensional quantum pipeline type carrier path. The pipeline is formed at the intersection of different energy level layers of the superlattice. Conductivity modulation through an adjacent exposed surface is employed for control in the pipeline and in arrays thereof. The pipeline carrier path involves both electrons and holes. A structure of Ga.sub.1-x Al.sub.x As with alternating 100.ANG. and 500.ANG. thick layers of different x has positioned, intersecting those layers, a 100.ANG. thick GaAs layer covered by a GaAlAs layer. Control and contacting electrodes are positioned on the exposed surfaces.

    摘要翻译： 半导体超晶格被提供有一维量子管线型载体路径。 管道形成在超晶格的不同能级层的交点处。 通过相邻的暴露表面的电导率调制用于管道中的控制和其阵列。 流水线载波路径涉及电子和空穴。 具有不同x的交替的100个ANGSTROM和500个ANGSTROM厚层的Ga1-xAlxAs的结构已经与这些层定位，由GaAlAs层覆盖的100厚的GaAs层。 控制和接触电极定位在暴露的表面上。

    Molecular-beam epitaxy system and method including hydrogen treatment
    4.
    发明授权
    Molecular-beam epitaxy system and method including hydrogen treatment 失效
    分子束外延系统和方法包括氢处理

    公开(公告)号：US4239584A

    公开(公告)日：1980-12-16

    申请号：US947912

    申请日：1978-09-29

    申请人： Chin-An Chang ,  Leroy L. Chang ,  Leo Esaki

    发明人： Chin-An Chang ,  Leroy L. Chang ,  Leo Esaki

    IPC分类号： C30B23/02 ,  B05D3/06

    CPC分类号： C30B23/02 ,  C30B29/40 ,  C30B29/42 ,  Y10S117/906 ,  Y10S148/06 ,  Y10S148/169

    摘要： A system and method including the use of hydrogen in the molecular beam evaporation process for epitaxy growth, such as in the formation of GaAs and GaAlAs and Sn for n-type dopant impurity. In a molecular beam epitaxy system, a hydrogen beam introduced and, along with the molecular beam, is directed on the substrate during the epitaxy growth such that the presence of the relatively small volume of hydrogen influences the physical surface properties of the epitaxially grown material and therefore the quality of the epitaxy.

    摘要翻译： 一种包括在用于外延生长的分子束蒸发过程中使用氢的系统和方法，例如在形成GaAs和GaAlAs以及用于n型掺杂剂杂质的Sn中。 在分子束外延系统中，在外延生长期间引入的氢束和分子束一起被引导到衬底上，使得相对小体积的氢的存在影响外延生长材料的物理表面性质， 因此外延的质量。

    Heterojunction tunneling base transistor
    5.
    发明授权
    Heterojunction tunneling base transistor 失效
    异质结隧道基极晶体管

    公开(公告)号：US4173763A

    公开(公告)日：1979-11-06

    申请号：US805055

    申请日：1977-06-09

    申请人： Leroy L. Chang ,  Leo Esaki

    发明人： Leroy L. Chang ,  Leo Esaki

    IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/76 ,  H01L29/88 ,  H01L29/267

    CPC分类号： H01L29/7606

    摘要： Device having three semiconductor regions, which can be characterized as the emitter, base and collector regions. The emitter and collector regions have a first conductivity type, and the base region has the opposite conductivity type, where both the base-emitter and base-collector junctions are heterojunctions. The base region is sufficiently thin that charge carriers can tunnel therethrough. The base region has a small resistance due to its heavy doping (which is greater than the doping of both the emitter and the collector). Both the valence band and the conduction band in the emitter and collector regions are shifted in the same direction with respect to the valence band and conduction band of the base region (i.e., the energy gaps of the emitter and collector are shifted in the same direction with respect to the energy gap of the base region and overlap with the energy band of the base to produce band-edge discontinuities .DELTA.E.sub.c and .DELTA.E.sub.v). Any materials yielding the proper energy band diagram can be used; for example, Si-GaP and alloys of GaAsSb-InGaAs are particularly suitable.

    摘要翻译： 具有三个半导体区域的器件，其可以被表征为发射极，基极和集电极区域。 发射极和集电极区域具有第一导电类型，并且基极区域具有相反的导电类型，其中基极 - 发射极和基极 - 集电极结都是异质结。 基极区域足够薄，电荷载流子可以穿透其中。 由于其重掺杂（其大于发射极和集电极的掺杂），基极区域具有小的电阻。 发射极和集电极区域中的价带和导带都相对于基极区域的价带和导带在相同方向上偏移（即，发射极和集电极的能隙在相同方向上偏移 相对于基区的能隙并与基底的能带重叠以产生带边不连续性DELTA Ec和DELTA Ev）。 可以使用产生适当能带图的任何材料; 例如，Si-GaP和GaAsSb-InGaAs的合金是特别合适的。

    Field effect transistor
    6.
    发明授权
    Field effect transistor 失效
    场效应晶体管

    公开(公告)号：US4743951A

    公开(公告)日：1988-05-10

    申请号：US355942

    申请日：1982-03-08

    申请人： Chin-An Chang ,  Leroy L. Chang ,  Leo Esaki ,  Emilio E. Mendez

    发明人： Chin-An Chang ,  Leroy L. Chang ,  Leo Esaki ,  Emilio E. Mendez

    IPC分类号： H01L29/778 ,  H01L29/80

    CPC分类号： H01L29/7783

    摘要： The mobility of carriers in the channel region of a field effect transistor can be increased by providing a layered structure wherein electrons are separated from impurities. The channel is made up of external layers of wide bandgap material and internal layers with a narrower bandgap where the bottom of the conduction band of one layer is below the top of the valence band of the adjacent layer. A structure is shown with a layered channel having AlSb external layers and at least one or both of InAs and GaSb internal layers.

    摘要翻译： 可以通过提供其中电子与杂质分离的分层结构来增加场效应晶体管的沟道区中载流子的迁移率。 通道由宽带隙材料的外层和具有较窄带隙的内层组成，其中一层的导带的底部低于相邻层的价带的顶部。 显示了具有AlSb外层和InAs和GaSb内层中的至少一个或两者的层状沟道的结构。

    Photomultiplier
    7.
    发明授权
    Photomultiplier 失效
    光电倍增管

    公开(公告)号：US4568959A

    公开(公告)日：1986-02-04

    申请号：US500502

    申请日：1983-06-02

    申请人： Leroy L. Chang ,  Frank F. Fang

    发明人： Leroy L. Chang ,  Frank F. Fang

    IPC分类号： H01L31/107 ,  H01L31/109 ,  H01L27/14 ,  H01L31/00

    CPC分类号： H01L31/109

    摘要： A semiconductor structure is provided with progressively changing band gap in a plurality of stages each at an abrupt interface with an asymmetry in the band gap widths such that the major difference in energy gap discontinuity is in the band favoring a particular type of carrier. The transition regions between the progressive material sections are smaller than the carrier mean free path so as to provide kinetic energy for efficient carrier multiplication with reduced noise as the carriers traverse through the device.

    摘要翻译： 半导体结构在多个阶段中逐渐变化的带隙具有逐渐变化的带隙，每个级具有在带隙宽度上的不对称性的突然界面，使得能隙差异不连续性的主要差异在有利于特定类型载体的频带中。 渐进材料部分之间的过渡区域小于载体平均自由程，以便当载体穿过装置时，提供用于有效载波乘法与降低的噪声的动能。

    Heterojunction superlattice with potential well depth greater than half the bandgap
    9.
    发明授权
    Heterojunction superlattice with potential well depth greater than half the bandgap 失效
    具有潜在阱深度大于带隙一半的异质结超晶格

    公开(公告)号：US4250515A

    公开(公告)日：1981-02-10

    申请号：US914098

    申请日：1978-06-09

    申请人： Leo Esaki ,  Raphael Tsu ,  George A. Sai-Halasz ,  Leroy L. Chang

    发明人： Leo Esaki ,  Raphael Tsu ,  George A. Sai-Halasz ,  Leroy L. Chang

    IPC分类号： H01L29/15 ,  H01L29/205 ,  H01L47/00

    CPC分类号： H01L29/155

    摘要： A superlattice structure is disclosed in which alternating layers of semiductor alloy materials provide a one dimensional spatial periodic variation in band edge energy. A first layer of the superlattice device is an alloy including a first Group III material and a first Group V material, preferably In As, while the second layer is an alloy including a second Group III material different from the first Group III material and a second Group V material different from the first Group V material, and preferably GaSb. In the superlattice structure the valence band of the second alloy is closer to the conduction band of the first alloy than it is to the valence band of the first alloy.

    摘要翻译： 公开了一种超晶格结构，其中半导体合金材料的交替层提供带边能量的一维空间周期性变化。 超晶格器件的第一层是包括第一III族材料和第一V族材料（优选In As）的合金，而第二层是包含不同于第一III族材料的第二III族材料的合金， V族材料与第一V族材料不同，优选为GaSb。 在超晶格结构中，第二合金的价带比第一合金的价带更接近第一合金的导带。