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公开(公告)号：US20100009612A1
公开(公告)日：2010-01-14
申请号：US12440184
申请日：2007-08-31
IPC分类号： B24D3/00
CPC分类号： B24B37/20
摘要： The present invention provides a polishing pad which can improve qualities of an object to be polished by improving the flatness of the object. A polishing surface 1a of a polishing pad 1 is subjected to a mechanical process, such as buffing, so that the flatness of the surface is improved, and corrugations on the polishing surface have a cycle of 5 mm-200 mm and a largest amplitude of 40 μm or less. As a result, the flatness of the object polished by the polishing pad 1, such as a silicon wafer, is improved.
摘要翻译： 本发明提供一种抛光垫，其可以通过提高物体的平坦度来提高被抛光物体的质量。 抛光垫1的抛光表面1a经受诸如抛光的机械处理，使得表面的平坦度得到改善，并且抛光表面上的波纹具有5mm-200mm的周期和最大幅度的 40岁以下。 结果，由诸如硅晶片的抛光垫1抛光的物体的平坦度得到改善。
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公开(公告)号：US5041173A
公开(公告)日：1991-08-20
申请号：US279335
申请日：1988-12-02
CPC分类号： B24B37/16 , B22D15/00 , B22D25/02 , B24B37/14 , C21D5/00 , C22C37/04 , Y02P10/212 , Y10S148/905 , Y10S148/91
摘要： Spherical graphite cast iron utilized to prepare a lapping tool is manufactured by casting a molten composition into a mold cavity, and by chilling one side of the resulting casting thereby causing unidirectional solidification, the one side being used as the operating surface of the lapping tool. The molten composition consists of 3.0-3.8 wt. % of carbon, 2.0-2.9 wt. % of silicon, 0.3-0.9 wt. % of manganese, less than 0.05 wt. % of phosphorus, less than 0.03 wt. % of sulfur, 0.2-1.0 wt. % of nickel, 0-0.8 wt. % of copper, 0.05-0.5 wt. % of molybdenum, 0.03-0.09 wt. % of magnesium and the balance of iron. The lapping tool made of this casting has a percentage of sphericity of higher than 80%, graphite particle diameter of less than 100 microns, a density of graphite particles of larger than 70/mm.sup.2, and a Vickers hardness of larger than 200.
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公开(公告)号：US08866123B2
公开(公告)日：2014-10-21
申请号：US13884331
申请日：2010-11-22
IPC分类号： H01L47/00 , H01L45/00 , H01L29/792 , H01L27/24 , H01L29/66 , H01L27/115
CPC分类号： H01L27/2436 , H01L27/1157 , H01L27/11582 , H01L27/2409 , H01L27/2454 , H01L27/2481 , H01L27/249 , H01L29/66833 , H01L29/7926 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/144 , H01L45/1608 , H01L45/1616 , H01L45/1683
摘要： A vertical chain memory includes two-layer select transistors having first select transistors which are vertical transistors arranged in a matrix, and second select transistors which are vertical transistors formed on the respective first select transistors, and a plurality of memory cells connected in series on the two-layer select transistors. With this configuration, the adjacent select transistors are prevented from being selected by respective shared gates, the plurality of two-layer select transistors can be selected, independently, and a storage capacity of a non-volatile storage device is prevented from being reduced.
摘要翻译： 垂直链式存储器包括具有第一选择晶体管的两层选择晶体管，它们是以矩阵形式排列的垂直晶体管，第二选择晶体管是形成在各个第一选择晶体管上的垂直晶体管，以及多个存储单元串联连接 双层选择晶体管。 利用这种配置，防止相邻的选择晶体管被相应的共享栅极选择，可以独立地选择多个两层选择晶体管，并且防止非易失性存储装置的存储容量减小。
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公开(公告)号：US08812190B2
公开(公告)日：2014-08-19
申请号：US13202033
申请日：2010-04-15
IPC分类号： G06F7/00
CPC分类号： G06F3/04847 , B60H1/0065 , G06F3/0362
摘要： A vehicular input manipulation apparatus has a target parameter switchover manipulating device and a setup changeover manipulating device in order to change setup contents of several control parameters for drive control of an in-vehicle apparatus. The target parameter switchover manipulating device executes switchover to designate one of the control parameters as a change target control parameter. The setup changeover manipulating device changes a setup content relative to the change target control parameter. When a control mode of the in-vehicle apparatus is changed into a predetermined control mode, a control circuit automatically enforces switchover relative to the change target control parameter by automatically replacing the control parameter, which has been designated as the change target control parameter, with an enforcement change target control parameter, which is a predetermined control parameter associated with the predetermined control mode.
摘要翻译： 车辆输入操纵装置具有目标参数切换操作装置和设置切换操作装置，以便改变用于车载装置的驱动控制的几个控制参数的设置内容。 目标参数切换操作装置执行切换，将一个控制参数指定为变更对象控制参数。 设置切换操作装置相对于改变目标控制参数改变设置内容。 当车载设备的控制模式改变为预定的控制模式时，控制电路通过自动地将已被指定为改变目标控制参数的控制参数自动替换为改变目标控制参数的切换， 执行改变目标控制参数，其是与预定控制模式相关联的预定控制参数。
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公开(公告)号：US08772746B2
公开(公告)日：2014-07-08
申请号：US13349653
申请日：2012-01-13
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L27/2454 , H01L27/2472 , H01L45/144 , H01L45/1675
摘要： A semiconductor memory device in which the cell area can be decreased and the minimum feature size is not restricted by the thickness of the material forming the memory cell. In a semiconductor memory device, a gate insulating film, a channel extending in a direction X, and a resistance change element extending in the direction X are formed successively above multiple word lines extending in a direction Y, and a portion of the channel and a portion of the resistance change element are disposed above each of the plurality of the word lines. Such configuration can decrease the cell area and ensure the degree of design freedom.
摘要翻译： 可以减小单元面积并且最小特征尺寸不受形成存储单元的材料的厚度的半导体存储器件。 在半导体存储器件中，连续地沿着Y方向延伸的多个字线形成栅极绝缘膜，沿X方向延伸的沟道和沿X方向延伸的电阻变化元件，并且沟道的一部分和 电阻变化元件的一部分设置在多条字线的上方。 这样的配置可以减小单元面积并确保设计自由度。
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公开(公告)号：US08642988B2
公开(公告)日：2014-02-04
申请号：US13588112
申请日：2012-08-17
IPC分类号： H01L29/02
CPC分类号： H01L45/144 , G11C13/0004 , G11C2213/71 , G11C2213/74 , G11C2213/75 , G11C2213/78 , H01L27/2409 , H01L27/2481 , H01L45/06
摘要： A non-volatile memory device includes: a first line extending along a main surface of a substrate; a stack provided above the first line; a second line formed above the stack; a select element provided where the first and second lines intersect, the select element adapted to pass current in a direction perpendicular to the main surface; a second insulator film provided along a side surface of the stack; a channel layer provided along the second insulator film; an adhesion layer provided along the channel layer; and a variable resistance material layer provided along the adhesion layer, wherein the first and second lines are electrically connected via the select element and channel layer, a contact resistance via the adhesion layer between the channel layer and variable resistance material layer is low, and a resistance of the adhesion layer is high with respect to an extending direction of the channel layer.
摘要翻译： 非易失性存储器件包括：沿衬底的主表面延伸的第一线; 提供在第一行之上的堆栈; 在堆叠之上形成第二线; 设置在所述第一和第二线相交的选择元件，所述选择元件适于在垂直于所述主表面的方向上传递电流; 沿着所述堆叠的侧表面设置的第二绝缘膜; 沿所述第二绝缘膜设置的沟道层; 沿着沟道层提供的粘合层; 以及沿着粘合层设置的可变电阻材料层，其中第一和第二线经由选择元件和沟道层电连接，通过沟道层和可变电阻材料层之间的粘合层的接触电阻低，并且 粘合层的电阻相对于沟道层的延伸方向高。
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公开(公告)号：US08132063B2
公开(公告)日：2012-03-06
申请号：US13191442
申请日：2011-07-26
申请人： Motoyasu Terao , Satoru Hanzawa , Hitoshi Kume , Minoru Ogushi , Yoshitaka Sasago , Masaharu Kinoshita , Norikatsu Takaura
发明人： Motoyasu Terao , Satoru Hanzawa , Hitoshi Kume , Minoru Ogushi , Yoshitaka Sasago , Masaharu Kinoshita , Norikatsu Takaura
IPC分类号： G11C29/00
CPC分类号： G11C13/0064 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C29/028 , G11C29/50 , G11C29/50008 , G11C2013/0054 , G11C2213/72
摘要： To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.
摘要翻译： 为了实现低功耗的快速且高度可靠的相变存储器系统，半导体器件包括：存储器件，其包括具有包括多个第一存储器单元的第一区域的第一存储器阵列和包括多个第一存储器单元的第二区域 第二存储单元; 控制器，其耦合到所述存储器设备以向所述存储器设备发出命令; 以及用于存储多个试写条件的条件表。 控制器基于存储在条件表中的多个试写条件，在多个第二存储单元中执行多次尝试写入，并且基于试写的结果来确定多个第一存储单元中的写入条件。 存储器件基于从控制器指示的写入条件在多个第一存储器单元中执行写入。
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48.发明申请公开(公告)号：US20110284817A1
公开(公告)日：2011-11-24
申请号：US13109985
申请日：2011-05-17
CPC分类号： H01L27/2481 , H01L27/1021 , H01L27/2409 , H01L27/2436 , H01L27/2472
摘要： In a nonvolatile semiconductor memory device, there is provided a technique which promotes microfabrication by reducing a thickness of the device as suppressing an OFF current of a polysilicon diode which is a selective element. A polysilicon layer to which an impurity is doped at low concentration and which becomes an electric-field relaxation layer of the polysilicon diode which is a selective element of a resistance variable memory is formed so as to be divided into two or more layers such as polysilicon layers. In this manner, it is suppressed to form the crystal grain boundaries thoroughly penetrating between an n-type polysilicon layer and a p-type polysilicon layer in the electric-field relaxation layer, and therefore, it is prevented to generate a leakage current flowing through the crystal grain boundaries in application of a reverse-bias voltage without increasing a height of the polysilicon diode.
摘要翻译： 在非易失性半导体存储器件中，提供了一种通过减小作为选择元件的多晶硅二极管的截止电流来减小器件厚度来促进微细加工的技术。 形成以低浓度掺杂有杂质并作为电阻可变存储器的选择元件的多晶硅二极管的电场弛豫层的多晶硅层，以被分成两层或多层，例如多晶硅 层。 以这种方式抑制电场弛豫层中的n型多晶硅层和p型多晶硅层之间的晶粒边界完全透过，从而防止产生流过的漏电流 在不增加多晶硅二极管的高度的情况下施加反偏压的晶粒边界。
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49.发明授权Semiconductor device with recording layer containing indium, germanium, antimony and tellurium 有权具有含有铟，锗，锑和碲的记录层的半导体器件公开(公告)号：US08000126B2
公开(公告)日：2011-08-16
申请号：US12522744
申请日：2007-01-11
申请人： Takahiro Morikawa , Motoyasu Terao , Norikatsu Takaura , Kenzo Kurotsuchi , Nozomu Matsuzaki , Yoshihisa Fujisaki , Masaharu Kinoshita , Yuichi Matsui
发明人： Takahiro Morikawa , Motoyasu Terao , Norikatsu Takaura , Kenzo Kurotsuchi , Nozomu Matsuzaki , Yoshihisa Fujisaki , Masaharu Kinoshita , Yuichi Matsui
CPC分类号： H01L45/144 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1675
摘要： A phase change memory is formed of a plug buried within a through-hole in an insulating film formed on a semiconductor substrate, an interface layer formed on the insulating film in which the plug is buried, a recording layer formed of a chalcogenide layer formed on the interface layer, and an upper contact electrode formed on the recording layer. The recording layer storing information according to resistance value change is made of chalcogenide material containing indium in an amount range from 20 atomic % to 38 atomic %, germanium in a range from 9 atomic % to 28 atomic %, antimony in a range from 3 atomic % to 18 atomic %, and tellurium in a range from 42 atomic % to 63 atomic %, where the content of germanium larger than or equal to the content of antimony.
摘要翻译： 相变存储器由形成在半导体衬底上的绝缘膜中的埋入通孔内的插塞形成，形成在绝缘膜上的界面层，其中埋入插塞，由硫化物层形成的记录层形成在 界面层和形成在记录层上的上接触电极。 根据电阻值变化存储信息的记录层由含有20原子％至38原子％的量的铟的含量为9原子％至28原子％的锗的硫属化物材料制成，3原子级的锑 ％〜18原子％，碲为42原子％〜63原子％，锗的含量大于或等于锑的含量。
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公开(公告)号：US4867803A
公开(公告)日：1989-09-19
申请号：US178866
申请日：1988-04-01
CPC分类号： B24B37/16 , B22D15/00 , B22D25/02 , B24B37/14 , C21D5/00 , C22C37/04 , Y02P10/212 , Y10S148/905 , Y10S148/91
摘要： Spherical graphite cast iron utilized to prepare a lapping tool is manufactured by casting a molten composition into a mold cavity, and by chilling one side of the resulting casting thereby causing unidirectional solidification, the one side being used as the operating surface of the lapping tool. The molten composition consists essentially of 3.0-3.8 wt. % of carbon, 2.0-2.9 wt. % of silicon, 0.3-0.9 wt. % of manganese, less than 0.05 wt. % of phosphorus, less than 0.03 wt. % of sulfur, 0.2-1.0 wt. % of nickel, 0-0.8 wt. % of copper, 0.05-0.5 wt. % of molybdenum, 0.03-0.09 wt. % of magnesium and the balance of iron. The lapping tool made of this casting has a percentage of sphericity of higher than 80%, graphite particle diameter of less than 100 microns, a density of graphite particles of larger than 70/mm.sup.2, and a Vickers hardness of larger than 200.
摘要翻译： 用于制备研磨工具的球形石墨铸铁通过将熔融组合物浇铸到模具腔中并通过冷却所得铸件的一侧而引起单向凝固而制造，该一侧用作研磨工具的操作表面。 熔融组合物基本上由3.0-3.8wt。 ％的碳，2.0-2.9重量％ 硅的％，0.3-0.9重量％ ％的锰，小于0.05wt。 磷的百分比，小于0.03重量％ 硫的百分比，0.2-1.0重量％ ％的镍，0-0.8wt。 铜的百分比，0.05-0.5重量％ ％的钼，0.03-0.09wt。 镁的百分比和铁的余量。 由该铸件制成的研磨工具具有高于80％，石墨粒径小于100微米，石墨颗粒密度大于70 / mm 2，维氏硬度大于200的球形度百分比。
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