摘要:
The present invention provides a protein or polypeptide substance having at least one amino group bonded to a polyethyleneglycolosy group represented by the following general formula;R.sub.1 --(OCH.sub.2 CH.sub.2).sub.n --O--(wherein R.sub.1 represents an optionally substituted cholesteryl group; and n represents a positive integer which is arbitrarily variable), and a method for producing said the protein or polypeptide.The present invention also provides a reactive polyethyleneglycol derivative as an intermediated for above the method.The chemically modified protein or polypeptide of the present invention never impairs bonding with a receptor and has a high plysiological activity. Then, a behaviors in vivo of these substance is improved. Now medical substances or drugs having a high pharmacological activity can be developed by using these substance.
摘要:
A power transmission device includes: a planetary gear mechanism; a first rotary machine connected to a sun gear of the planetary gear mechanism; an engine and a one-way clutch that are connected to a carrier of the planetary gear mechanism; a second rotary machine and a drive wheel that are connected to a ring gear of the planetary gear mechanism; and a parking device connected to the ring gear. The power transmission device is configured to positively rotate the first rotary machine at a time a command to disengage the parking device is received and thereafter disengage the parking device, and a direction of the positive rotation is a rotational direction of the carrier rotary-driven by the engine.
摘要:
A hybrid vehicle driving device includes a first planetary gear mechanism, a second planetary gear mechanism, and a clutch, wherein a sun gear of the first planetary gear mechanism is connected to a first electric rotating machine, a carrier of the first planetary gear mechanism is connected to a driving wheel, a ring gear of the first planetary gear mechanism is connected to an engine, a sun gear of the second planetary gear mechanism is connected to a second electric rotating machine, the carrier of the second planetary gear mechanism is connected to the ring gear of the first planetary gear mechanism and the engine through the clutch, and a ring gear of the second planetary gear mechanism is connected to the driving wheel.
摘要:
A hybrid vehicle driving device includes a first planetary gear mechanism, a second planetary gear mechanism, and a clutch, wherein a sun gear of the first planetary gear mechanism is connected to a first electric rotating machine, a carrier of the first planetary gear mechanism is connected to a driving wheel, a ring gear of the first planetary gear mechanism is connected to an engine, a sun gear of the second planetary gear mechanism is connected to a second electric rotating machine, the carrier of the second planetary gear mechanism is connected to the ring gear of the first planetary gear mechanism and the engine through the clutch, and a ring gear of the second planetary gear mechanism is connected to the driving wheel.
摘要:
An object of the invention is to effectively remove particles on the glass substrate surfaces, even in the case wherein abrasive particles having a small particle size is used in the polishing step of the glass substrate and a supersonic treatment is performed at a high frequency at the supersonic cleaning step after the polishing step. In a manufacturing method of a glass substrate for a magnetic disk comprising a polishing step for performing polishing of the glass substrate and a supersonic cleaning step for performing supersonic cleaning of the glass substrate after the polishing step, the polishing step uses abrasive particles having a particle size of 10 nm to 30 nm and a first supersonic cleaning is performed at a frequency of 300 kHz to 1,000 kHz to form secondary particles and then a second supersonic cleaning is performed at a frequency of 30 kHz to 100 kHz in the supersonic cleaning step.
摘要:
A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.
摘要:
A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.
摘要:
An information processing apparatus includes a display section and a main body section. The display section is disposed on a first surface and has a display panel and a display panel case. The display panel case houses the display panel such that the display panel can display an image. The display panel case has a protrusion portion formed at a first end. The main body section is disposed on a second surface and has an input section and a depressed portion. The depressed portion is formed at a second end of the second surface and has a pierced portion and a housing portion. The pierced portion is formed from the second surface to an opposite surface thereof such that a battery is attached to the pierced portion. The housing portion axially houses the protrusion portion on a side opposite to the input section with respect to the pierced portion.
摘要:
A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film; to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.