Method of producing turbine blade
    41.
    发明授权
    Method of producing turbine blade 有权
    涡轮叶片的生产方法

    公开(公告)号:US08726504B2

    公开(公告)日:2014-05-20

    申请号:US13544275

    申请日:2012-07-09

    CPC分类号: B23P15/02 B21K3/04

    摘要: The present invention relates to a method of producing turbine blade, which comprises, (a) forging a plurality of turbine blades in a state where the plurality of turbine blades are integrally connected in a longitudinal direction, (b) heat treating the plurality of turbine blades in the integrally connected state, (c) machining the plurality of turbine blades in the integrally connected state, and (d) separating the plurality of turbine blades into individual turbine blades. According to the method, the number of processes for the forging work can be decreased, and forging efficiency can be enhanced. Moreover, an amount of burr which occurs during the forging work can be reduced, and hence, a yield of material can be improved, as compared with a case where the turbine blade is forged as a single body.

    摘要翻译: 本发明涉及一种生产涡轮叶片的方法,该方法包括(a)在多个涡轮叶片沿纵向一体连接的状态下锻造多个涡轮叶片,(b)热处理多个涡轮机 处于整体连接状态的叶片,(c)以整体连接的状态加工多个涡轮叶片,以及(d)将多个涡轮叶片分离成单独的涡轮叶片。 根据该方法,能够减少锻造加工的次数,能够提高锻造效率。 此外,与将涡轮叶片锻造为单体的情况相比,可以减少在锻造期间发生的毛刺量,从而可以提高材料的产率。

    Polishing Composition and Polishing Method Using The Same
    43.
    发明申请
    Polishing Composition and Polishing Method Using The Same 有权
    抛光组合和抛光方法使用它

    公开(公告)号:US20120142258A1

    公开(公告)日:2012-06-07

    申请号:US13042648

    申请日:2011-03-08

    IPC分类号: B24B1/00 C09G1/02 C09K3/14

    CPC分类号: C09G1/02 C09K3/1463

    摘要: A polishing composition contains at least abrasive grains and water and is used in polishing an object to be polished. The abrasive grains are selected so as to satisfy the relationship X1×Y1≦0 and the relationship X2×Y2>0, where X1 [mV] represents the zeta potential of the abrasive grains measured during polishing of the object by using the polishing composition, Y1 [mV] represents the zeta potential of the object measured during polishing of the object by using the polishing composition, X2 [mV] represents the zeta potential of the abrasive grains measured during washing of the object after polishing, and Y2 [mV] represents the zeta potential of the object measured during washing of the object after polishing. The abrasive grains are preferably of silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, silicon carbide, or diamond. The object is preferably of a nickel-containing alloy, silicon oxide, or aluminum oxide.

    摘要翻译: 抛光组合物至少包含磨粒和水,并用于抛光待抛光物体。 选择磨粒以满足关系X1×Y1≦̸ 0和关系X2×Y2> 0,其中X1 [mV]表示通过使用抛光组合物在物体抛光期间测量的磨粒的ζ电位, Y1 [mV]表示通过使用抛光组合物在物体抛光期间测量的物体的ζ电位,X2 [mV]表示在研磨后的物体洗涤期间测量的磨粒的ζ电位,Y2 [mV]表示 抛光后物体洗涤时测量的物体的ζ电位。 磨粒优选为氧化硅,氧化铝,氧化铈,氧化锆,碳化硅或金刚石。 目的是优选含镍合金,氧化硅或氧化铝。

    Laminated piezoelectric ceramic element manufacturing method
    44.
    发明授权
    Laminated piezoelectric ceramic element manufacturing method 有权
    层压压电陶瓷元件制造方法

    公开(公告)号:US08062460B2

    公开(公告)日:2011-11-22

    申请号:US12905400

    申请日:2010-10-15

    IPC分类号: B32B37/02 B32B38/04

    摘要: There is provided a laminated piezoelectric ceramic element manufacturing method, wherein, even when the number of internal electrode laminations is increased, the lamination and cutting steps can be simplified, to enhance cutting precision and make cutting cost low. A first laminated body having stripe-like internal electrodes is cut into a plurality of second laminated bodies so as to have a width-direction dimension W corresponding to a width dimension of a laminated piezoelectric ceramic element chip to be ultimately obtained. Two or more second laminated bodies are laminated in the laminating direction to obtain a third laminated body, and the third laminated body is cut in the laminating direction and parallel to the width direction W to obtain a laminated piezoelectric body.

    摘要翻译: 提供了一种叠层压电陶瓷元件的制造方法,其中,即使内部电极片的数量增加,也可以简化层压和切割步骤,从而提高切割精度并降低切割成本。 具有条状内部电极的第一层叠体被切割为多个第二层压体,以便具有与最终获得的叠层压电陶瓷元件芯片的宽度尺寸相对应的宽度方向尺寸W. 在层叠方向上层叠两层以上的第二层叠体,得到第三层叠体,在层叠方向上切断第三层叠体,与宽度方向W平行,得到层叠型压电体。

    PLASMA DISPLAY PANEL
    45.
    发明申请
    PLASMA DISPLAY PANEL 审中-公开
    等离子显示面板

    公开(公告)号:US20110175554A1

    公开(公告)日:2011-07-21

    申请号:US12990197

    申请日:2010-03-29

    IPC分类号: H05B41/00 H01J1/62

    CPC分类号: H01J11/40 H01J11/12

    摘要: The present invention aims to provide a plasma display panel that can be driven at low voltage and can offer favorable image display performance. In order to achieve the aim, on a surface of the front panel 1 on which the display electrode 5 is formed, the protective layer 7 made by using a crystalline oxide material that contains a crystalline oxide selected from the group consisting of (i) at least one of SrCeO3 and BaCeO3 and (ii) a solid solution of SrCeO3 and BaCeO3 is disposed so as to face the discharge space 14. By using the crystalline oxide material that contains the crystalline oxide selected from the group consisting of (i) at least one of SrCeO3 and BaCeO3 and (ii) a solid solution of SrCeO3 and BaCeO3, chemical stability can be improved without reducing secondary electron emission efficiency. A PDP capable of lowering drive voltage compared with a case where MgO is used can be obtained by using the crystalline oxide material.

    摘要翻译: 本发明的目的在于提供一种能够以低电压驱动的等离子体显示面板,能够提供良好的图像显示性能。 为了达到目的,在其上形成有显示电极5的前面板1的表面上,使用包含选自以下的结晶氧化物的结晶氧化物材料制成的保护层7:(i) 将SrCeO 3和BaCeO 3中的至少一种和(ii)SrCeO 3和BaCeO 3的固溶体设置成面对放电空间14.通过使用含有选自以下的结晶氧化物的结晶氧化物材料:(i)至少 SrCeO3和BaCeO3之一,(ii)SrCeO3和BaCeO3的固溶体,可以提高化学稳定性,而不会降低二次电子发射效率。 通过使用结晶性氧化物材料,可以得到与使用MgO的情况相比能够降低驱动电压的PDP。

    PLASMA DISPLAY DEVICE
    46.
    发明申请
    PLASMA DISPLAY DEVICE 审中-公开
    等离子体显示设备

    公开(公告)号:US20100118004A1

    公开(公告)日:2010-05-13

    申请号:US12597803

    申请日:2009-04-14

    IPC分类号: G09G3/28 G06F3/038

    CPC分类号: H01J11/12 G09G3/296 H01J11/40

    摘要: A protective layer of a plasma display panel has a base protective layer formed of a thin film of a metal oxide, and a particle layer. The particle layer is formed by sticking, to the base protective layer, single-crystal particles of magnesium oxide such that the emission intensity of a peak at 200 nm to 300 nm is at least twice the emission intensity of a peak at 300 nm to 550 nm in an emission spectrum of cathode luminescence light emission. A panel driving circuit drives the panel in a manner that a second subfield group having a plurality of subfields is temporally disposed after a first subfield group having a plurality of subfields to form one field period. Each subfield of the first subfield group has initializing period (Ti), address period (Tw) for forming wall charge to cause a sustain discharge, and sustain period (Ts). Each subfield of the second subfield group has address period (Tw) for erasing wall charge necessary for causing a sustain discharge, and sustain period (Ts).

    摘要翻译: 等离子体显示面板的保护层具有由金属氧化物的薄膜和粒子层形成的基底保护层。 通过将氧化镁的单晶粒子粘附到基底保护层,使得在200nm〜300nm的峰的发光强度为300nm〜550nm的峰的发光强度的至少两倍来形成粒子层 在阴极发光发光的发射光谱中。 面板驱动电路以具有多个子场的第二子场组在具有多个子场的第一子场组之间时间地布置以形成一个场周期的方式驱动面板。 第一子场组的每个子场具有用于形成壁电荷以产生维持放电的初始化周期(Ti),寻址周期(Tw)和维持周期(Ts)。 第二子场组的每个子场具有用于擦除维持放电所需的壁电荷的寻址周期(Tw)和维持周期(Ts)。

    Method for manufacturing silicon single crystal
    48.
    发明授权
    Method for manufacturing silicon single crystal 有权
    硅单晶的制造方法

    公开(公告)号:US06340390B1

    公开(公告)日:2002-01-22

    申请号:US09585466

    申请日:2000-06-02

    IPC分类号: C03B1520

    CPC分类号: C30B29/06 C30B15/00

    摘要: A method for manufacturing a silicon single crystal. In this method, silicon material melting is performed in a furnace having an internal pressure between 60 and 400 mbar. The subsequent single crystal pulling is performed in a furnace having an internal pressure which is lower than the pressure when the silicon material is molten, but not exceeding 95 mbar. This method prevents production of a defective single crystal which results from the formation of pinholes, prevents dislocation of the single crystal which results from bubbles and impurities present in silicon melting solution, and prevents dislocation of the single crystal which results from evaporation of the SiO.

    摘要翻译: 一种制造硅单晶的方法。 在该方法中,在内部压力在60至400毫巴之间的炉子中进行硅材料熔化。 随后的单晶拉制在内部压力低于硅材料熔融时的压力但不超过95毫巴的炉中进行。 该方法防止由于形成针孔而产生的有缺陷的单晶,防止由硅熔融溶液中存在的气泡和杂质引起的单晶错位,并防止由SiO的蒸发引起的单晶错位。

    Acceleration sensor with direct mounting
    50.
    发明授权
    Acceleration sensor with direct mounting 失效
    加速传感器直接安装

    公开(公告)号:US5481915A

    公开(公告)日:1996-01-09

    申请号:US163436

    申请日:1993-12-08

    IPC分类号: G01P15/09

    CPC分类号: G01P15/0915

    摘要: An acceleration sensor includes a circuit board having an acceleration signal output electrode and a ground electrode formed on its one major surface, a piezoelectric element fixed on the acceleration signal output electrode, a conductive member fixed on the ground electrode, and a weight member mounted in a crosslinked manner and fixed on the conductive member and the piezoelectric element, and wherein the piezoelectric element is so arranged that its axis of polarization is in a direction along the direction in which acceleration is applied, and the weight member is so constructed that its one surface in contact with the piezoelectric element and the conductive member has conductivity.

    摘要翻译: 加速度传感器包括具有加速度信号输出电极和形成在其一个主表面上的接地电极的电路板,固定在加速度信号输出电极上的压电元件,固定在接地电极上的导电部件和安装在 并且固定在导电部件和压电元件上,并且其中压电元件被布置成使得其偏振轴沿着沿着加速度的方向的方向,并且配重构件被构造成使得它的一个 与压电元件和导电部件接触的表面具有导电性。