公开(公告)号：US09994933B2

公开(公告)日：2018-06-12

申请号：US12767074

申请日：2010-04-26

申请人： Weilin Gao ,  Tomotsugu Aoyama ,  Hisashi Suda ,  Hiroto Narieda ,  Akira Sugawara ,  Akifumi Onodera

发明人： Weilin Gao ,  Tomotsugu Aoyama ,  Hisashi Suda ,  Hiroto Narieda ,  Akira Sugawara ,  Akifumi Onodera

IPC分类号： C22C9/00 ,  C22C9/06 ,  C22C9/10 ,  C22F1/00 ,  C22F1/08 ,  H01R13/03

CPC分类号： C22C9/06 ,  C22C9/00 ,  C22F1/00 ,  C22F1/08 ,  H01R13/03

摘要： A copper alloy sheet has a chemical composition containing 0.7 to 4.0 wt % of Ni, 0.2 to 1.5 wt % of Si, and the balance being copper and unavoidable impurities, the copper alloy sheet having a crystal orientation which satisfies I{200}/I0{200}≥1.0, assuming that the intensity of X-ray diffraction on the {200} crystal plane on the surface of the copper alloy sheet is I{200} and that the intensity of X-ray diffraction on the {200} crystal plane of the standard powder of pure copper is I0{200}, and which satisfies I{200}/I{422}≥15, assuming that the intensity of X-ray diffraction on the {422} crystal plane on the surface of the copper alloy sheet is I{422}.

公开(公告)号：US09129731B2

公开(公告)日：2015-09-08

申请号：US13572812

申请日：2012-08-13

申请人： Matahiro Komuro ,  Yuichi Satsu ,  Isao Kitagawa ,  Akira Sugawara

发明人： Matahiro Komuro ,  Yuichi Satsu ,  Isao Kitagawa ,  Akira Sugawara

IPC分类号： H01F7/02 ,  H01F1/01 ,  H01F1/057

CPC分类号： H01F1/0572 ,  H01F1/0577 ,  H01F1/0579

摘要： Disclosed is a sintered magnet which is a rare-earth magnet using a less amount of a rare-earth element but having a higher maximum energy product and a higher coercivity. The sintered magnet includes a NdFeB crystal; and an FeCo crystal adjacent to the NdFeB crystal through the medium of a grain boundary. The FeCo crystal includes a core and a periphery and has a cobalt concentration decreasing from the core to the periphery. The FeCo crystal has a difference in cobalt concentration of 2 atomic percent or more between the core and the periphery. In the NdFeB crystal, cobalt and a heavy rare-earth element are unevenly distributed and enriched in the vicinity of the grain boundary.

摘要翻译： 公开了一种使用少量稀土元素但具有较高最大能量积和较高矫顽力的稀土类磁体的烧结磁体。 烧结磁体包括NdFeB晶体; 以及通过晶界的介质与NdFeB晶体相邻的FeCo晶体。 FeCo晶体包括芯和周边，并且具有从芯到周边的钴浓度降低。 FeCo晶体在芯和周边之间的钴浓度不同于2原子％以上。 在NdFeB晶体中，钴和重稀土元素不均匀分布并富集在晶界附近。

公开(公告)号：US08653472B2

公开(公告)日：2014-02-18

申请号：US12854262

申请日：2010-08-11

申请人： Ken Harada ,  Akira Sugawara ,  Noboru Moriya

发明人： Ken Harada ,  Akira Sugawara ,  Noboru Moriya

IPC分类号： G21K5/04

CPC分类号： H01J37/20 ,  H01J37/09 ,  H01J37/26 ,  H01J2237/2002 ,  H01J2237/206

摘要： The present invention is based on the property that the electric and magnetic fields are independent of each other and normal to each other and the property that the deflection of a charged particle beam by the electromagnetic field follows the rule of linear combination. The present invention employs a system that creates a region in which there exist both electromagnetic field and controls the deflection of a charged particle beam in each of the electric and magnetic fields.

摘要翻译： 本发明是基于电场和磁场彼此独立并且彼此正常的特性以及通过电磁场的带电粒子束的偏转遵循线性组合规则的性质。 本发明采用一种系统，其产生存在电磁场的区域，并控制每个电场和磁场中的带电粒子束的偏转。

公开(公告)号：US20130069746A1

公开(公告)日：2013-03-21

申请号：US13572812

申请日：2012-08-13

申请人： Matahiro KOMURO ,  Yuichi Satsu ,  Isao Kitagawa ,  Akira Sugawara

发明人： Matahiro KOMURO ,  Yuichi Satsu ,  Isao Kitagawa ,  Akira Sugawara

IPC分类号： H01F7/02 ,  H01F1/01

CPC分类号： H01F1/0572 ,  H01F1/0577 ,  H01F1/0579

摘要： Disclosed is a sintered magnet which is a rare-earth magnet using a less amount of a rare-earth element but having a higher maximum energy product and a higher coercivity. The sintered magnet includes a NdFeB crystal; and an FeCo crystal adjacent to the NdFeB crystal through the medium of a grain boundary. The FeCo crystal includes a core and a periphery and has a cobalt concentration decreasing from the core to the periphery. The FeCo crystal has a difference in cobalt concentration of 2 atomic percent or more between the core and the periphery. In the NdFeB crystal, cobalt and a heavy rare-earth element are unevenly distributed and enriched in the vicinity of the grain boundary.

摘要翻译： 公开了一种使用少量稀土元素但具有较高最大能量积和较高矫顽力的稀土类磁体的烧结磁体。 烧结磁体包括NdFeB晶体; 以及通过晶界的介质与NdFeB晶体相邻的FeCo晶体。 FeCo晶体包括芯和周边，并且具有从芯到周边的钴浓度降低。 FeCo晶体在芯和周边之间的钴浓度不同于2原子％以上。 在NdFeB晶体中，钴和重稀土元素不均匀分布并富集在晶界附近。

公开(公告)号：US08198683B2

公开(公告)日：2012-06-12

申请号：US12958739

申请日：2010-12-02

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L29/786

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域限定在栅极绝缘膜下。

公开(公告)号：US20110073759A1

公开(公告)日：2011-03-31

申请号：US12854262

申请日：2010-08-11

申请人： Ken HARADA ,  Akira Sugawara ,  Noboru Moriya

发明人： Ken HARADA ,  Akira Sugawara ,  Noboru Moriya

IPC分类号： H01J3/14

CPC分类号： H01J37/20 ,  H01J37/09 ,  H01J37/26 ,  H01J2237/2002 ,  H01J2237/206

摘要： The present invention is based on the property that the electric and magnetic fields are independent of each other and normal to each other and the property that the deflection of a charged particle beam by the electromagnetic field follows the rule of linear combination. The present invention employs a system that creates a region in which there exist both electromagnetic field and controls the deflection of a charged particle beam in each of the electric and magnetic fields.

摘要翻译： 本发明是基于电场和磁场彼此独立并且彼此正常的特性以及通过电磁场的带电粒子束的偏转遵循线性组合规则的性质。 本发明采用一种系统，其产生存在电磁场的区域，并控制每个电场和磁场中的带电粒子束的偏转。

公开(公告)号：US20110031395A1

公开(公告)日：2011-02-10

申请号：US12850961

申请日：2010-08-05

申请人： Ken Harada ,  Akira Sugawara

发明人： Ken Harada ,  Akira Sugawara

IPC分类号： H01J37/26

CPC分类号： H01J37/28 ,  H01J37/295 ,  H01J2237/1514 ,  H01J2237/2611 ,  H01J2237/2614

摘要： A first electron biprism is disposed in a condenser optical system and an observation region of a specimen is irradiated simultaneously with two electron beams of different angles. The two electron beams that have simultaneously transmitted the specimen are spatially separated and focused with a second electron biprism disposed in an imaging optical system and two electron microscopic images of different irradiation angles are obtained. The two picture images are obtained by a detecting unit. Based on the two picture images, a stereoscopic image or two images having different kinds of information of the specimen is/are produced and displayed on a display device.

摘要翻译： 第一电子双棱镜设置在聚光镜系统中，并且与两个不同角度的电子束同时照射样本的观察区域。 同时透射样品的两个电子束在空间上分离并且与设置在成像光学系统中的第二电子双棱镜聚焦，并且获得两个不同照射角度的电子显微镜图像。 两个图像由检测单元获得。 基于两个图像，产生并显示具有样本的不同种类的信息的立体图像或两个图像并显示在显示装置上。

公开(公告)号：US07847355B2

公开(公告)日：2010-12-07

申请号：US12534382

申请日：2009-08-03

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L29/786

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域限定在栅极绝缘膜下。

公开(公告)号：US07525158B2

公开(公告)日：2009-04-28

申请号：US10893889

申请日：2004-07-20

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L29/786

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

摘要翻译： 形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。 形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。 此后，进行一个导电性元素的离子掺杂。 高电阻率区域限定在栅极绝缘膜下。

公开(公告)号：US20070227685A1

公开(公告)日：2007-10-04

申请号：US11729221

申请日：2007-03-28

申请人： Akira Sugawara ,  Takayuki Takahashi

发明人： Akira Sugawara ,  Takayuki Takahashi

IPC分类号： B22D19/04 ,  B22D27/04 ,  B22D27/09

CPC分类号： B22D21/007 ,  B22D19/00 ,  H05K1/0306 ,  H05K3/101 ,  H05K2203/128

摘要： After a molten metal of aluminum or an aluminum alloy having a temperature, which is higher than the liquidus line temperature of aluminum or the aluminum alloy by 5 to 200° C., is injected into a mold, when the mold is cooled to solidify the molten metal, the molten metal injected into the mold is pressurized at a pressure of 1.0 to 100 kPa from a high-temperature side to a low-temperature side, and the mean cooling rate is set to be 5 to 100° C./minute while the mold is cooled from the liquidus line temperature to 450° C., the temperature gradient formed in the mold being set to be in the range of from 1° C./cm to 50° C./cm.

摘要翻译： 在铝或铝合金的熔融金属中，当将铝或铝合金的液相线温度高5〜200℃的温度注入模具时，当模具冷却固化时 熔融金属，注入模具中的熔融金属从高温侧至低温侧以1.0〜100kPa的压力加压，平均冷却速度设定为5〜100℃/分钟 当模具从液相线温度冷却到450℃时，模具中形成的温度梯度被设定在1℃/ cm到50℃/ cm的范围内。